Electrodeposition of thin Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> films

The electrochemical behavior of copper(II), zinc(II), and thiosulfate (S₂O₃ ^2-) ions on the molybdenum electrode in individual 0.2 М sodium sulfate solutions (рН 6.7) and with addition of either 0.1 М tartaric acid (рН 4.6) or 0.1 М citric acid (рН 4.7) is studied. A one-step electrochemical method is developed for the deposition of thin Cu₂ZnSnS₄ films, which is carried out on the molybdenum electrode at a constant potential in sodium sulfate solutions containing tartaric acid. The effect of the concentration of electrolyte components on the chemical composition of Cu₂ZnSnS₄ films is determined. The phase composition is confirmed by the Raman spectroscopy data. The surface morphology of synthesized films is studied by means of scanning-electron and atomic-force microscopes. The photoelectrochemical characteristics of Cu₂ZnSnS₄ films are determined. Samples of these coatings on the Mo electrode are found to be highly photosensitive.     

Electrodeposition of thin cadmium sulfide films from Na<Subscript>2</Subscript>SO<Subscript>3</Subscript>-based electrolyte

Results of a study of the electrodeposition of thin cadmium sulfide films from a sulfite electrolyte and its degradation in the course of electrolysis are presented. The factors determining the degradation rate of the electrolyte are revealed. The supposed mechanism of reactions resulting in that CdS is formed is described.     

Electrodeposition of CuInSe<Subscript>2</Subscript> films onto a molybdenum electrode

Joint reduction of Cu(II), Se(IV), and In(III) ions at a molybdenum electrode from a solution based of sulfosalicylic acid solution was studied. The optimal range of potentials for deposition of the CuInSe₂ compound was chosen. The composition of the films obtained was confirmed by X-ray phase and electron microprobe analyses.     

Synthesis and characterization of ZrO<Subscript>2</Subscript> thin films

Physicochemical processes involved in the preparation of zirconia thin films by sol-gel technology from film-forming solutions (FFSs) on the basis of zirconium oxochloride and ethanol were studied. The phase composition, structure, and properties of the films were determined.     

Synthesis of CuInSe<Subscript>2</Subscript> and CuGaSe<Subscript>2</Subscript> hexagonal microplates in oleic acid and oleylamine mixture

The compounds of I-II-VI₂ family are the leading materials in the second-generation thin film solar cells. In this paper, we reported the synthesis of CuGaSe₂ and CuInSe₂ hexagonal microplates in the mixture of oleylamine and oleic acid. Regular copper, indium, and gallium salts as well as selenium powder were used as the precursors with stoichiometric ratio. X-ray diffraction patterns and selected area electron diffraction characterization confirmed their high crystalline quality. Furthermore, control experiments indicated two possible mechanisms of morphology transformation. The synthetic method is simple and reproducible and the as-prepared nanomaterials might find their application in solar cells. The article is published in the original.     

Electrodeposition of PbO<Subscript>2</Subscript>-ZrO<Subscript>2</Subscript> composite materials

The regularities of electrodeposition of composite materials based on PbO₂ containing zirconium dioxide particles are studied. The contents of various phases in the composite depend on the electrolyte composition and conditions of deposition. When a dispersed phase is incorporated into the composite coating, the dimensions of lead dioxide crystals decrease to submicrons.     

Characterization of nanocrystalline anatase TiO<Subscript>2</Subscript> thin films

Nanoporous thin films were deposited onto glass substrates by painting with a solution of nanocrystalline anatase TiO(2) particles (with a size of either 6 nm or 16 nm) suspended in an organic solvent. Upon drying in air for about 1 day, the films were tempered at 450 degrees C in air for 1 h. This procedure results in stoichiometric TiO(2) films with a thickness of several micro m and a milky whitish appearance. Scanning force microscopy of the surface revealed that the nanoparticles of the films agglomerated into structures with lateral dimensions of some 100 nm. Transmission electron microscopy was utilized to investigate the structural arrangement of the crystallites in the films. High-resolution electron diffraction and X-ray diffraction analyses demonstrated, furthermore, that the material consists exclusively of a single TiO(2) phase, namely anatase, and that the films do not exhibit any preferential texture. The elemental stoichiometry and the possible presence of impurities were monitored throughout the films by means of secondary-ion mass spectrometry depth profiling. Electrical measurements have been carried out as a function of both the sample temperature T and the ambient oxygen partial pressure p(O(2)). From these data the electrical conductivity sigma of the porous films was determined in dependence of those parameters.     

Electrodeposition of Cu<Subscript>2</Subscript>O: growth,properties, and applications

For a long time, the world has been waiting for a sustainable, inexpensive, and efficient material for application in electronic and energy conversion purposes. Cu₂O thin films made by electrodeposition clearly fulfill the sustainability and cost pre-requisites, and are broadly believed that they could lead to the fabrication of highly efficient devices if well prepared and designed. Here, we review the fundamentals for electrochemical synthesis and the electrodeposition aspects and procedures for growing Cu₂O. The properties of electrodeposited Cu₂O in thin films and nanostructures will be discussed in view of the literature, with emphasis on the electrical and optical properties and applications in photocatalysis and photovoltaics.     

Photoelectrochemical study of electrodeposited TiO<Subscript>2</Subscript> thin films onto F:SnO<Subscript>2</Subscript> substrates

TiO₂ thin films have been effectively fused onto F:SnO₂ (FTO) substrates via the electrodeposition method. The influence of deposition temperature on the synthesis of F:SnO₂ substrates and relative information of as-deposited and annealed TiO₂ thin films have been studied. Novel TiO₂ microspheres are detected on F:SnO₂ substrates at an optimized electrodeposition potential. Raman bands approve the creation of single-anatase-phase TiO₂. The optimized deposition surroundings show a decrease in the band gap of F:SnO₂ substrates and TiO₂ thin films. The determined photoelectrochemical properties of annealed TiO₂ thin films indicate a fill factor of 51% and power conversion efficiency of 0.15% for application in solar cells.     

Thermoanalytical study of precursors for In<Subscript>2</Subscript>S<Subscript>3</Subscript> thin films deposited by spray pyrolysis

Thermal decomposition of precursors for In₂S₃ thin films obtained by drying aqueous solutions of InCl₃ and SC(NH₂)₂ at the In:S molar ratios of 1:3 (1) and 1:6 (2) was monitored by simultaneous TG/DTA/EGA-FTIR measurements in the dynamic 80%Ar + 20%O₂ atmosphere. XRD and FTIR were used to identify the dried precursors and products of the thermal decomposition. The precursors 1 and 2 are complex compounds, while in 2 free SC(NH₂)₂ is also present. The thermal degradation of 1 and 2 in the temperature range of 30–900 °C consists of four mass loss steps, the total mass loss being 89.1 and 78.5%, respectively. According to XRD, In₂S₃ is formed below 300 °C, crystalline In_2.24(NCN)₃ is detected only in 1 above 520 °C and In₂O₃ is the final decomposition product at 900 °C. The gaseous species evolved include CS₂, NH₃, H₂NCN, HNCS, which upon oxidation yield also COS, SO₂, HCN and CO₂.     

Electrochromic properties of WO<Subscript>3</Subscript> and WO<Subscript>3</Subscript>:P thin films

WO₃ and WO₃:P (5 mol% H₃PO₄) thin films were prepared using the sol-gel route and the electrochromic properties of the films were investigated using in situ spectroelectrochemical methods. The measurements were performed in propylene carbonate solution with 0.1 M LiClO₄ as electrolyte. During the cathodic polarization at –0.8 V a blue coloration is observed with a reversible variation between 14% and 84% of the transmittance at λ=633 nm. The kinetics for the bleaching process is faster for the WO₃:P film than for the undoped WO₃ film. Electronic Publication     

Inkjet printing of Ce<Subscript>0.8</Subscript>Gd<Subscript>0.2</Subscript>O<Subscript>2</Subscript> thin films on Ni-5%W flexible substrates

The successful inkjet printing of a cerium gadolinium oxide (Ce_0.8Gd_0.2O₂) precursor solution on highly textured Ni-5%W is reported. A stable ink was synthesised from metal acetates and propionic acid with rheological properties suitable for inkjet printing and also the development of solid–liquid interface comparable with thin film formation by dip coating. Two different drop-on-demand print heads were used for deposition: a 16-nozzle piezoelectric cartridge and a single electromagnetic nozzle. Two different rastering patterns with different droplet sizes and spacing were compared. Thermogravimetry and X-ray diffractometry were used to study the thermal decomposition of the metal oxide precursors and to determine the shortest possible heat treatment of the deposited layers, potentially suitable for continuous large scale production. The results from X-ray diffraction show that the single phase Ce_0.8Gd_0.2O₂ was obtained in all cases, but only piezoelectric inkjet printing with optimised drop overlapping produces a highly textured buffer layer. Optical micrographs and atomic force microscopy also indicate the good quality of deposited films after heat treatment.     

Mechanical and optical properties of SiO<Subscript>2</Subscript> thin films deposited on glass

The optical and mechanical properties of amorphous SiO₂ films deposited on soda-lime silicate float glass by reactive RF magnetron sputtering at room temperature were investigated in dependence of the process pressure. The densities of the films are strongly influenced by the process pressure and vary between 2.38 and 1.91 g cm^?3 as the pressure changes from 0.27 to 1.33 Pa. The refractive indices of the films shift between 1.52 and 1.37, while the residual compressive stresses in the deposited films vary in the range from 440 to 1 MPa. Hardness and reduced elastic modulus values follow the same trend and decline with the increase of process pressure from 8.5 to 2.2 GPa and from 73.7 to 30.9 GPa, respectively. The abrasive wear resistance decreases with the density of the films.     

Conductivity of SnO<Subscript>2</Subscript>-In<Subscript>2</Subscript>O<Subscript>3</Subscript> nanocrystalline composite films

The conductivity of films consisting of a mixture of SnO₂ and In₂O₃ nanocrystals at 200–500°C was studied. Based on the experimental data, it was assumed that in films containing less than 20 wt % In₂O₃, the current flows along SnO₂ nanocrystals. A model of conductivity in these films is presented; it includes an electron transfer from In₂O₃ to SnO₂, which forms positively charged In₂O₃ nanocrystals that contact the negatively charged SnO₂ nanocrystals. In the presence of In₂O₃ nanocrystals, the activation energy of the electron transfer between SnO₂ nanocrystals decreased substantially because of a decrease in the barrier of electron transfer between SnO₂ crystals under the action of the negative charge. As a result, a percolation cluster of charged SnO₂ crystals formed. At high contents of In₂O₃ (over 20 wt %), the conductivity increased dramatically. The curve of the temperature dependence of conductivity changed because of the appearance of a percolation cluster of In₂O₃ nanocrystals, in which the current passed. The conductivity of a mixed film of this kind differed from that of the nanocrystalline film of pure In₂O₃.     

Dielectric properties and I-V characteristics of (Pb<Subscript>0.4</Subscript>Sr<Subscript>0.6</Subscript>)TiO<Subscript>3</Subscript> thin films improved by TiO<Subscript>2</Subscript> buffer layers

A TiO₂ thin buffer layer was introduced between the (Pb_0.4Sr_0.6)TiO₃ (PST) film and the Pt/Ti/SiO₂/Si substrate in an attempt to improve their electrical properties. Both TiO₂ and PST layers were prepared by a chemical solution deposition method. It was found that the TiO₂ buffer layer increased the (100)/(001) preferred orientation of PST and decreased the surface roughness of the films, leading to an enhancement in electrical properties including an increase in dielectric constant and in its tunability by DC voltage, as well as a decrease in dielectric loss and leakage current density. At an optimized thickness of the TiO₂ buffer layer deposited using 0.02 mol/l TiO₂ sol, the 330-nm-thick PST films had a dielectric constant, loss and tunability of 1126, 0.044 and 60.7% at 10 kHz, respectively, while the leakage current density was 1.95 × 10⁻⁶ A/cm² at 100 kV/cm.     

Effects of acetoin as chelating agent on the preparation of SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript> thin films from non-hydrolyzing precursors

Ferroelectric thin films of strontium bismuth tantalate (SBT) have been fabricated by a chemical solution deposition technique using non-hydrolyzing precursors. Strontium acetate, bismuth nitrate and tantalum ethoxide were used as precursor materials, with methanol and glacial acetic as solvents. We investigate the effects of the precursor chemistry, by the selection of the chelating agent, on the elimination of residual organic compounds, thermal evolution of phase formation, and microstructure evolution of derived films. We found that the utilization of alkanolamines as chelating agent produce the segregation of metallic bismuth in as-prepared powders. On the other hand, acetoin, one of the hydroxyketones, showed the elimination of residual organics at low temperature, an earlier onset of crystallization, and no segregation of secondary phases during the whole crystallization process. A comparative investigation of the surface microstructure, grain size distribution, crystallinity, and degree of crystal orientation of films fabricated with the different chelating agents is presented. The dielectric and ferroelectric properties of films prepared with acetoin are investigated.     

The effect of PO<Subscript>2,5</Subscript> and AlO<Subscript>1,5</Subscript> additions on structural changes and crystallization behavior of SiO<Subscript>2</Subscript>-TiO<Subscript>2</Subscript> sol-gel derived glasses and thin films

SiO₂-TiO₂-PO_2,5 (STP) and SiO₂-TiO₂-AlO_1,5 (STA) glasses were prepared by sol-gel processing. Their infrared absorption spectra (IR), differential thermal analysis curves (DTA) and X-ray diffraction patterns (XRD) have been recorded. In the SiO₂-TiO₂ system, the chemical homogeneity of the sol-gel glass could be evaluated by the relative concentration of Si-O-Ti heterocondensation comparing to Si-O-Si homocondensation. For the STA system, a gradual decrease of the Si-O-Ti/Si-O-Si band ratio (based on IR spectra) with the addition of Al₂O₃ is observed, with the simultaneous formation of Si-O-Al and Ti-O-Al bounds, i.e Al₃ ⁺ ions are dissolved in the SiO₂-TiO₂ glass matrix and do not promote glass-in-glass phase-separation in the composition range of 0–15 mol% AlO_1.5. In the STP system, on the other hand, P=O bond IR stretch in the ternary glasses indicates that P=O free PO₂O_2/2 ⁻ tetrahedra are formed, rather than the double bonded POO_3/2 tetrahedra that usually occur in binary SiO₂-P₂O₅ glasses. It can be concluded that SiO₂-TiO₂-P₂O₅ glass separates into a SiO₂-rich phase and a TiO₂(P₂O₅)-rich phase. During heat-treatment in STA system only anatase precipitates, even at T ~ 1,000 °C, while in for STP, anatase (TiO₂) or (TiO)₂P₂O₇ (TOP) crystals precipitate at ~600 °C, depending on the P₂O₅ concentration. The major crystal phase, cristobalite, precipitated at ~1,000 °C and at ~1,200 °C, the P-containing phase melts.     

Effect of heat treatment on electrochromic properties of TiO<Subscript>2</Subscript> thin films

Electrochromic titanium oxide (TiO₂) films were deposited on ITO/glass substrates by chemical solution deposition (CSD). The stock solutions were spin-coated onto substrates and then heated at various temperatures (200–500 °C) in various oxygen concentrations (0–80%) for 10 min. The effects of the processing parameters on the electrochromic properties of TiO₂ films were investigated. X-ray diffraction measurements demonstrated that the amorphous TiO₂ films were crystallized to form anatase films above 400 °C. The electrochromic properties and transmittance of TiO₂ films were measured in 1 M LiClO₄–propylene carbonate (PC) non-aqueous electrolyte. An amorphous 350 nm-thick TiO₂ film that was heated at 300°C in 60% ambient oxygen exhibited the maximum transmittance variation (ΔT%), 14.2%, between the bleached state and the colored state, with a ΔOD of 0.087, Q of 10.9 mC/cm², η of 7.98 cm²/C and x in Li _x ClO₄ of 0.076 at a wavelength (λ) of 550 nm.