一种改进的2×2 SOI Mach-Zehnder热光开关

本文设计并制作了基于强限制多模干涉耦合器的2×2 SOI马赫-曾德热光开关.这种光开关采用了深刻蚀结构的多模干涉耦合器和输入/输出波导,较大地提高了干涉耦合器的性能并减少了连接耦合损耗.同时,在调制臂区域采用浅刻蚀结构,保持其单模调制状态.深刻蚀多模干涉耦合器具有优越的特性,在实验中测得不均衡度只有0.03 dB,插入损耗－0.6 dB.基于这种耦合器的新型热光开关,其插入损耗为－6.8 dB,其中包括光纤-波导耦合损耗－4.3 dB,开关时间为6.8 μs.     

新型SOI基3×3多模干涉波导光开关的优化设计

提出了一种基于SOI材料的新型3×3多模干涉(MMI)波导光开关,在开关的多模波导中引入折射率调制区,利用硅的等离子色散效应改变多模波导局部区域的折射率,使得光场在传输过程中的相位发生变化,进而确定输出光场位置,实现开关功能。采用有限差分光束传播法(FD-BPM)方法对开关的各个状态进行了模拟和分析,并对器件的结构参量进行了优化设计,采用优化后的结构参量,开关可实现的最大消光比达到-17.27 dB。     

基于MZI结构的二氧化硅波导模式选择开关

设计并且制备了一种基于马赫-曾德尔干涉仪结构的二氧化硅波导模式选择开关。该器件由不对称定向耦合器及金属电极组成。通过金属电极产生的热场改变单模波导中的模式相位,实现了单模波导中E₀₀模式向多模波导中E₁₀模式的转换。器件采用标准CMOS工艺制备,在调制臂两侧引入空气槽,提高热场调制效率,降低开关功耗。实验结果表明,当输入E₀₀模式时,输出端的串扰小于-17.13 dB,消光比大于16.7 dB;当输入E₁₀模式时,输出端的串扰小于-19.84 dB,消光比大于22.5 dB。模式开关的上升时间和下降时间分别为0.7 ms和1 ms。该模式选择开关在模分复用系统中具有良好的应用前景。     

基于二维多模干涉效应的N×N光开关模型

报道了由两个N×N三维多模干涉耦合器和一段阵列相移波导组成的三维光开关.首先利用导模传输法分析了三维多模干涉耦合器的一般成像原理,并推导出了其成像位置以及相位矩阵.在此基础上,通过场传输矩阵法建立了光开关的传输方程.利用该传输方程计算得到了光开关工作时,阵列相移波导的相位条件,并通过三维有限差分光束传输法进行仿真验证,...     

InP基1×4多模干涉耦合器的设计与制作

在密集波分复用系统中,多波长DFB激光器阵列与多模干涉耦合器集成光源器件具有重要的应用前景.为了研制多波长集成光源中的宽带可用低损耗光耦合器,利用三维有限差分光束传播法仿真设计了一种具有强限制作用的InP/InGaAsP材料的多模干涉型耦合器.输入/输出端波导均采用楔形结构以降低多模干涉型耦合器的插入损耗,提高各个输出端口的出光平衡度.根据仿真结果,结合波导芯层为采用外延生长设备,采用反应离子刻蚀工艺制作了1×乘4多模干涉型耦合器.利用自动对准波导耦合测试系统对所制作器件的插入损耗和出光平衡度进行测量.测试结果表明,该器件在1 550nm波长附近的40nm带宽范围内获得了约2.6dB的通带平坦度,在1 550nm通信波长处,器件的插入损耗低于10dB.     

基于多模干涉耦合器的阵列波导光栅设计研究

研究了基于多模干涉(MMI)耦合器的阵列波导光栅(AWG).通过模式传输分析方法,分析了多模干涉耦合器及阵列波导;并给出在硅基底上的二氧化硅波导上四通道100 GHz-AWG普通结构和紧凑结构的设计结果.     

SOI波导反射模式的古斯-汉欣空间位移效应及其数字式热光开关

借助波导转角镜结构,利用古斯-汉欣空间位移和热光效应折射率调制的有效组合,提出了波导反射模式数字式热光开关结构。在给定入射角的条件下优化了空间古斯-汉欣位移,在具有古斯-汉欣效应的本征态下,反射光束出现了较大的跳跃。在1.0μm厚硅膜的绝缘体上硅平台上,单模输入波导和多模干涉波导结构之间的导模本征态匹配,验证了1×3数字式光开关功能。实验中,器件结构引起的光损耗为0.3 dB,开关功率为130~150 mW,开关时间约为50μs,相邻输出端之间隔离度为15 dB。与马赫-曾德尔干涉仪型的2×2热光开关和等离子体效应热光开关的最新结果进行比较证明了该数字式热光开关的先进性。     

SOI波导反射模式的古斯-汉欣空间位移效应及其数字式热光开关（英文）

借助波导转角镜结构,利用古斯-汉欣空间位移和热光效应折射率调制的有效组合,提出了波导反射模式数字式热光开关结构。在给定入射角的条件下优化了空间古斯-汉欣位移,在具有古斯-汉欣效应的本征态下,反射光束出现了较大的跳跃。在1.0μm厚硅膜的绝缘体上硅平台上,单模输入波导和多模干涉波导结构之间的导模本征态匹配,验证了1×3数字式光开关功能。实验中,器件结构引起的光损耗为0.3 dB,开关功率为130～150 mW,开关时间约为50μs,相邻输出端之间隔离度为15 dB。与马赫-曾德尔干涉仪型的2×2热光开关和等离子体效应热光开关的最新结果进行比较证明了该数字式热光开关的先进性。     

SOI通道转换型多模干涉耦合器的研究

设计和制作了基于SOI的通道转换型多模干涉耦合器。用二维BPM方法分析了耦合器的性能与多模波导宽度和长度的依赖关系.制作出的耦合器能实现良好的通道转换,器件的功率转换比为73,附加损耗为2.2 dB.提高器件制作的精度将能进一步改善耦合器的性能.     

采用三维波束传输法的多模干涉耦合器成像位置的数值计算

多模干涉(MMI)耦合器需要精确定位成像位置,以便器件的设计制作。针对强限制和弱限制的三维多模波导干涉耦合器,采用三维交替方向隐式有限差分光束传输法(BPM),数值计算得出多模波导长度、输入波导和输出波导位置。首先通过对对称干涉多模干涉耦合器的数值分析求得多模干涉耦合器的等效宽度Weq及最低二阶模之间的拍长Lc,然后将这些参量结合光束传输法直接用于器件设计。计算显示该方法得到的成像位置和导模传输分析法(MPA)的理论预测比较接近,但Weq和Lc却是由光束传输法计算得到的,导模传输分析法理论只能在得到Weq和Lc的前提下才能得到成像位置。该方法直接针对三维波导进行,没有采用基于等效折射率方法的从三维波导到二维波导的简化处理,并且也没有采用导模传输分析法所采用的近似,保证了计算精度,对于实际多模干涉器件的设计制作可起参考作用。     

Multimode interference wavelength multi/demultiplexer for 1310 and 1550 nm operation based on BCB 4024-40 photodefinable polymer

A 1310 and 1550 nm coarse wavelength multi/demultiplexer based on benzocyclobutene (BCB 4024-40) polymer is demonstrated for the first time. The device is designed based on a combination of general interference and paired interference mechanisms of multimode interference (MMI). It is fabricated on BK7 glass substrate with a thin layer of SiO₂ as cover. A cost effective chemical etching technique is used in the fabrication process to take advantage of the photosensitive nature of the polymer. The device length was significantly reduced by adopting the restricted multimode interference scheme, lower beat length ratio and cascaded MMI couplers. The measured crosstalk at 1310 nm was 14.4 dB and at 1550 nm was 20.6 dB. The measured insertion loss is around 3.2-3.5 dB for both ports.     

Mach-Zehnder Interferometer Based on Coupled Dielectric Pillars

We propose a Mach-Zehnder interferometer （MZI） based on coupled dielectric pillars. It is composed of single-row pillar coupled waveguide modulating arms and three-row pillar waveguide 3 dB couplers. The slow light property and transmission loss of the single-row pillar modulating arm are optimized by the plane wave expansion method. A short 3dB coupler is designed based on the modes transformation in three-row pillar waveguide. Finite difference time domain simulations prove the validity of this MZI and show that it has low insertion loss of 1.1 dB and high extinction ratio of 〉 12 dB.     

Polymeric Multimode Interference Mach–Zehnder Interferometer Electro-Optic Switch Using Embedded Coplanar Waveguide Electrode: Theory,Design, and Analysis

Abstract

The self-imaging theory is improved for designing a polymer multimode interference Mach–Zehnder interferometer electro-optic switch. The electro-optic overlap factor is enhanced from 0.6510 to 0.9658 through adopting an embedded coplanar waveguide electrode. Considering the mode dispersion effect, formulations of time-domain response are derived, and switching characteristics are analyzed. The total device length is about 7.175 mm, the switching voltage is 2.622 V, and the switching time is 29.90 ps. The lightwave 3-dB bandwidth is 20 nm, the insertion loss is less than 2.70 dB, and the crosstalk under cross and bar states are less than ?55 dB and ?45 dB, respectively.     

Design for beam splitting components employing silicon-on-insulator rib waveguide structures

We present a new design for beam splitting components employing a silicon-on-insulator rib waveguide structures. In the new design, a high-index thin-film layer is deposited in the rib section to reduce the wave field dispersive tails in the slab section and accordingly render the mode field a confined spot. This in turn improves the beam splitting performance of some conventional waveguide components such as y branches and multimode interference couplers (MMICs), in terms of the excess loss, fiber coupling loss, and compactness of these components. For a 1 x 2 y-branch beam splitter, the excess loss can be as small as 0.43 dB in the new design, which is much lower than that for a conventional rib waveguide structure (which is 1.28 dB). For a 1 x 2 MMIC in our example, the new rib waveguide structure presents an excess loss of 0.064 dB for the TE mode and 0.046 dB for the TM mode, with negligible nonuniformity in dimensions of 30 microm x 1040 microm, whereas its counterpart (i.e., the one with the same dimensions but without a thin-film layer) presents an excess loss of approximately 0.86 dB for both modes. A conventional MMIC must have dimensions larger than 70 microm x 5650 microm to maintain almost the same low excess loss.     

Mode-order converter in a multimode waveguide

A novel device that converts the order of modes in an integrated-optic multimode waveguide was proposed and fabricated. The device consists of two mode splitters and tapered waveguides. Its operation at a wavelength of 1.55 microm was confirmed by observation of the output mode profiles. The cross talk measured by an indirect method was >10.2 dB. The excess loss with reference to a straight multimode waveguide was 1.5 dB, compared with the propagation loss of a straight multimode waveguide.     

Power splitting ratio couplers based on MMI structures with high bandwidth and large tolerance using silicon waveguides

We show that it is possible to obtain 2 × 2 couplers based on multimode interference (MMI) structures with nineteen new power-splitting ratios by cascading three or four MMI couplers. The other aim of this study is to use silicon waveguides, that are compatible with the existing CMOS (Complementary Metal-Oxide-Semiconductor) fabrication technology, for designing the proposed devices. The proposed MMI couplers with new power splitting ratios have simple geometries and low losses. These MMI couplers can offer valuable new possibilities for designing MMI waveguide-based photonic integrated circuits such as all-optical interconnects, microring resonators, clock distribution, Mach Zehnder Interferometer based on MMI couplers and other all-optical processing applications. The transfer matrix method (TMM) and modified effective index method (MEIM) along with the support of the 3D Beam Propagation Method (3D BPM) are used to optimize the proposed devices.