脉冲激光作用下铝靶的层裂

 本文报导波长为1.06 μm脉宽（FWHM）约4 ns的强脉冲激光辐照下，铝靶发生层裂的实验结果。当入射功率密度在2.0×10¹¹~5×10¹¹ W/cm²范围的激光束作用下，厚度为0.1 mm、0.2 mm的靶在超临界条件下发生层裂，层裂厚度分别在(17±6) μm及(35±5) μm范围。文中使用一种简化模型对阈值条件下不同厚度的靶发生层裂时的层裂片厚度作了近似估算，并与已有的实验结果较好地符合。     

飞秒激光-物质相互作用产生Kα X射线

 用无色散X射线谱仪分别在靶前后测量了飞秒激光辐照铜箔产生的Kα X射线,获得了能量转换效率。入射激光脉冲宽度33 fs,能量在50 mJ～5 J,强度10₁₇～10₁₉ W/cm₂。靶后发射的Kα X射线强度随入射激光能量的增加而增加,其单色性较靶前好。采用100 μm厚靶,其能量转换率为2.2×10_-5。     

激光功率密度对Al膜靶后表面快电子发射的影响

 报道了在20 TW皮秒激光器上完成的p偏振激光与等离子体相互作用过程中产生的快电子的角分布和能谱测量结果。实验得到：当激光功率密度小于10¹⁷ W/cm²时,电子发射没有明显定向性,在激光入射面内多峰发射;当激光功率密度大于10¹⁷ W/cm2,小于10¹⁸ W/cm²时,电子主要沿靶面法线方向发射;当激光功率密度达到相对论强度时,电子主要沿激光传播方向发射;激光功率密度未达到相对论强度时,靶后表面法线方向快电子能谱拟合平均温度符合共振吸收温度定标率;激光功率密度达相对论强度以上时,靶后表面法线方向快电子能谱拟合平均温度高于已有的温度定标率。     

等离子体屏蔽和稀疏波对冲量耦合系数的影响

 利用脉冲Nd:YAG激光作用在铝、铜靶上，研究了不同入射激光能量下冲量耦合系数和离焦量之间的关系，以及不同功率密度情况下冲量耦合系数和光斑直径的关系。实验表明铝靶在入射激光脉冲能量由75.8 mJ增加到382.3 mJ时，冲量耦合系数峰值对应的最佳离焦量由－10 mm处远离焦点向透镜方向移到－18 mm，而对应的激光功率密度仅由2.0×10⁹ W/cm²增加到3.9×10⁹ W/cm²；铜靶实验规律和铝靶类似。等离子体屏蔽的吸收作用导致了冲量耦合系数达到最大值后迅速降低。铝靶在入射激光功率密度由0.7×10⁹ W/cm²增大到1.0×10¹⁰W/cm²时，冲量耦合系数随光斑直径增大而增大，对应变化斜率由5.2×10^-5N·s/（mm·J）增大到49.2×10^-5N·s/（mm·J），表明了稀疏波对冲量耦合系数的削弱作用随入射激光功率密度增加而增加，随光斑直径增大而减小。     

铝靶动态激光反射率的数值模拟

 从金属近自由电子模型——Prude/Fresnel理论出发，分析了激光作用下铝靶表面反射率的动态变化规律。通过对铝电导率与温度变化关系的数值模拟，得到了凝聚态、液态、气态反射率的动态变化规律，且与实验结果基本符合。当激光功率密度处于10¹¹~10¹⁵ W/cm^-2范围内时，由等离子体模型和局部热力学平衡（LTE）理论，亦得到了反射率随温度变化的数值模拟结果，与国外的实验结果符合得较好。     

1.319μm连续YAG激光束对可见光面阵CCD系统的干扰研究

 利用1.319μm连续钇铝石榴石激光对可见光面阵CCD系统进行干扰实验，分析了该CCD系统发生干扰饱和的原因，计算了1.319μm激光辐照面阵可见光CCD的干扰饱和阈值，利用实验数据在定量上验证了计算结果。当像面上激光功率密度达到10²W/cm²量级时，CCD出现饱和串音，达到10²W/cm²量级时，出现全屏饱和。     

电子束辐照圆环靶产生动态应变的实验研究

 动态应变是电子束辐照靶结构产生结构响应中的一个重要力学参数。本文叙述了近年来我们在“闪光二号”装置上进行电子束辐照圆环靶产生动态应变的实验研究。靶材为LY-12铝,靶厚为2.5~3 mm,靶上能通量为50~60 J/cm²。实验结果表明,在圆环受照部分内表面中心处应变值可达1.6×10⁴ με,而在圆环两侧内表面处应变值为(0.45~0.65)×10⁴ με。     

飞秒激光激发空气电离的阈值研究

报道在脉宽50fs—22ps，波长800nm脉冲激光作用下的空气电离阈值的研究结果.利用探测等离子体发光信号的方法，实验测量了激发空气电离所需的阈值激光强度.结果表明，当激光脉冲宽度从50fs增加到22ps时，阈值光强I_th从8.7×10¹⁴W/cm²下降到2.7×10¹³W/cm²；I_th经历了由迅速降低逐渐发展为缓慢降低的过程.在50fs—1p     

约束靶面黑漆涂层对激光冲击波的影响

 介绍了约束靶表面的黑漆涂层对激光冲击波的影响。激光功率密度 10⁹W/cm²量级，脉宽33ns，波长1.06μm。靶材选用两种不同厚度的铜和铝，靶表面用有机玻璃约束。通过对冲击波压力的直接测量发现，涂层不仅可以增加激光冲击波压力，而且还影响冲击波的演化过程。比较有无涂层的靶面SEM照片发现，黑漆涂层能有效地保护激光辐照表面，使之不受激光烧蚀。     

紫外超短脉冲激光辐照固体靶产生硬X射线研究

 实验研究了紫外高强度超短脉冲激光(248nm, 440fs, 50mJ)辐照固体靶时产生的硬X-射线(>30 keV)能量连续谱，靶上强度达到10¹⁷ W/cm²。P极化光45°照射5mm铜片，实验探测到了能量大于200keV的X射线信号，利用Maxwellian分布拟合能谱得到了的超热电子温度为67keV。     

强激光使铝靶层裂的模拟实验研究

 激光引起的冲击波可能使得靶材料层裂断裂，这个现象取决于光束的功率密度、脉冲持续时间、靶的厚度和靶材料的性能参数。用气炮驱动的平板撞击实验和概念模拟分析了极短持续时间的三角形压缩应力击波在LY-12铝靶中的传播衰减和层裂强度的时间相关性，根据气炮模拟实验结果，估计了厚度小于2 mm的LY-12铝靶产生层裂所需的激光功率密度和能量密度的阈值条件。     

Acceleration of heavy multicharged ions up to 1 MeV from a cleaned solid target irradiated by a femtosecond laser pulse with an intensity of 10<Superscript>16</Superscript> W/cm<Superscript>2</Superscript>

A noticeable increase in the charge and energy of ions accelerated from a solid tungsten target irradiated by a femtosecond laser pulse with an intensity higher than 10¹⁶W/cm² has been found when the target surface is precleaned by a nanosecond laser pulse with an energy density of 3 J/cm². Tungsten ions with charges up to +29 and energies up to 1 MeV were detected in this case, while the charge and energy of tungsten ions from a target with an uncleaned surface do not exceed +3 and 12 keV, respectively.     

Partial crystallization of silicon by high intensity laser irradiation

Commercial single crystal silicon wafers and amorphous silicon films piled on single crystal silicon wafers were irradiated with a femtosecond pulsed laser and a nanosecond pulsed laser at irradiation intensities between 10¹⁷ W/cm² and 10⁹ W/cm². In the single crystal silicon substrate, the irradiated area was changed to polycrystalline silicon and the piled silicon around the irradiated area has spindly column structures constructed of polycrystalline and amorphous silicon. In particular, in the case of the higher irradiation intensity of 10¹⁶ W/cm², the irradiated area was oriented to the same crystal direction as the substrate. In the case of the lower irradiation intensity of 10⁸ W/cm², only amorphous silicon was observed around the irradiated area, even when the target was single crystal silicon. In contrast, only amorphous silicon particles were found to be piled on the amorphous silicon film, irrespective of the intensity and pulse duration.Three-dimensional thermal diffusion equation for the piled particles on the substrate was solved by using the finite difference methods. The results of our heat-flow simulation of the piled particles almost agree with the experimental results.     

High-speed etching of hexagonal GaN by laser ablation and successive chemical treatment

Photostimulated direct etching of GaN has been demonstrated with extremely high etching rate up to 135 nm/pulse. The process consists of laser irradiation and ex-situhydrochloric acid treatment. Not only deep etching but also a highly planarized surface are obtained by an increase in laser fluence and the number of pulses. Seven-pulse irradiation at 1 J/cm² decreases surface average roughness (R_a) to ~2 nm from ~10 nm of the untreated sample. No deep-level emission (450-600 nm) is detected in photoluminescence measurement on the samples irradiated with laser fluences as high as 3 J/cm².     

Near‐3‐MeV protons from target‐normal‐sheath‐acceleration femtosecond laser irradiating advanced targets

Advanced targets based on graphene oxide and gold thin film were irradiated at high laser intensity (10¹⁸–10¹⁹ W/cm²) with 50‐fs laser pulses and high contrast (10⁸) to investigate ion acceleration in the target‐normal‐sheath‐acceleration regime. Time‐of‐flight technique was employed with SiC semiconductor detectors and ion collectors in order to measure the ion kinetic energy and to control the properties of the generated plasma. It was found that, at the optimized laser focus position with respect to the target, maximum proton acceleration up to about 3 MeV energy and low angular divergence could be generated. The high proton energy is explained as due to the high electrical and thermal conductivity of the reduced graphene oxide structure. Dependence of the maximum proton energy on the target focal position and thickness is presented and discussed.     

X-Rays emission by high-intensity pulsed lasers irradiating thin foils at PALS laboratory

X-rays and forward ion emission from laser-generated plasma in the Target Normal Sheath Acceleration regime of different targets with 10-μm thickness, irradiated at Prague Asterix Laser System (PALS) laboratory at about 10¹⁶ W/cm² intensity, employing a 1,315 nm-wavelength laser with a 300-ps pulse duration, are investigated. The photon and ion emissions were mainly measured using Silicon Carbide (SiC) detectors in time-of-flight configuration and X-ray streak camera imaging. The results show that the maximum proton acceleration value and the X-ray emission yield growth are proportional to the atomic number of the irradiated targets. The X-ray emission is not isotropic, with energies increasing from 1 keV for light atomic targets to about 2.5 keV for heavy atomic targets. The laser focal position significantly influences the X-ray emission from light and heavy irradiated targets, indicating the possible induction of self-focusing effects when the laser beam is focalized in front of the light target surface and of electron density enhancement for focalization inside the target.     

Enhancement of high energy proton yield with a polystyrene-coated metal target driven by a high-intensity femtosecond laser

We present experimental results on protons accelerated up to 950 keV from a 3-μm thick tantalum foil with a 133-nm thick polystyrene layer on its rear surface, irradiated with a laser pulse having the duration of 70 fs and the intensity of 2.7×10¹⁸ W/cm². The energy distribution of fast protons was measured simultaneously with that of the hot-electrons from the rear surface. The proton yield from the polystyrene-coated target is about 10 times as high as that from the uncoated metal target. This enhancement of the proton yield is roughly proportional to the increase of hydrogen atoms given by the 133-nm thick polystyrene layer, assuming a contaminant layer of ∼10-nm thickness is on the metal surface without coating. This result shows that the polystyrene layer contributes to the yield enhancement. PACS 52.38.Kd; 52.50.Jm; 52.59.-f     

Energetic ion generation by Coulomb explosion in cluster gas and a low-density plastic foam with an intense femtosecond laser

The energy distributions of protons emitted from the Coulomb explosion of hydrogen clusters by an intense femtosecond laser have been experimentally obtained. Ten thousand hydrogen clusters were exploded, emitting 8.1-keV protons under laser irradiation of intensity 6 × 10¹⁶W/cm². The energy distributions are interpreted well by a spherical uniform cluster analytical model. The maximum energy of the emitted protons can be characterized by cluster size and laser intensity. The laser intensity scale for the maximum proton energy, given by a spherical cluster Coulomb explosion model, is in fairly good agreement with the experimental results obtained at a laser intensity of 10¹⁶–10¹⁷ W/cm² and also when extrapolated with the results of three-dimensional particle simulations at 10²⁰–10²¹ W/cm². Energetic proton generation in low-density plastic (C₅H₁₀) foam by intense femtosecond laser pulse irradiation has been studied experimentally and numerically. Plastic foam was successfully produced by a sol-gel method, achieving an average density of 10 mg/cm³. The foam target was irradiated by 100-fs pulses of a laser with intensity 1 × 10¹⁸ W/cm². A plateau structure extending up to 200 keV was observed in the energy distribution of protons generated from the foam target, with the plateau shape explained well by Coulomb explosion of lamella in the foam. The laser-foam interaction and ion generation were studied qualitatively by two-dimensional particle-in-cell simulations, which indicated that energetic protons are mainly generated by the Coulomb explosion. From the results, the efficiency of energetic ion generation in a low-density foam target by Coulomb explosion is expected to be higher than in a gas-cluster target.