Three layers of neutrinos

In this Letter we point out that in a class of models for spontaneous R-parity breaking based on gauged B−L$B-L$, the spectrum for neutrinos is quite peculiar. We find that those models generally predict three layers of neutrinos: one heavy sterile neutrino, two massive active neutrinos, and three nearly massless (one active and two sterile) neutrinos.     

GaP layers grown on GaN with and without buffer layers

The growth of GaP layer on GaN with and without buffer layers by metal-organic chemical vapour deposition (MOCVD) has been studied. Results indicate that the GaP low temperature buffer layer can provide a high density of nucleation sites for high temperature (HT) GaP growth. These sites can promote the two-dimensional (2D) growth of HT GaP and reduce the surface roughness. A GaP single crystal layer grown at 680°C is obtained using a 40-nm thick GaP buffer layer. The full-width at half-maximum (FWHM) of the (111) plane of GaP layer, measured by DCXRD, is 560 arcsec. The GaP layer grown on GaN without low temperature GaP buffer layer shows a rougher surface. However, the FWHM of the (111) plane is 408 arcsec, which is the indication of better crystal quality for the GaP layer grown on GaN without a low temperature buffer layer. Because it provides less nucleation sites grown at high growth temperature, the three-dimensional (3D) growth is prolonged. The crystalline quality of GaP is lightly improved when the surface of GaN substrate is pretreated by PH3 , while it turned to be polycrystalline when the substrate is pretreated by TEGa.     

Ag_2O胶体粒子的自组装单层膜和多层膜

本文制备了Ａｇ２Ｏ胶体粒子的自组装单层膜和多层膜。运用接触角测量、红外吸收光谱和紫外可见吸收光谱等手段证实了Ａｇ２Ｏ胶体粒子能够组装在具有羧基的基底上,在有１,１８ 十八烷基二羧酸做为交联剂的情况下还可形成自组装多层膜     

Moving double layers

Using a triple-plasma device, moving double layers have been produced by abruptly increasing the plasma density in the region of the double layers. Propagation velocities up to 3.5 c_s have been achieved with their velocity scaling as $\text{ν ～ (2e ×}\text{δ?}\text{T}{}_{\mathrm{<mtext>e</mtext>}}\text{)}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{c}{}_{\mathrm{<mtext>S</mtext>}}$.     

Arsenic-implanted polysilicon layers

The diffusion behavior of implanted arsenic in polycrystalline silicon was investigated, using backscattering and electrical measurements. The diffusion coefficient isD=8.5×10⁻³ exp (−2.74/kT) for polycrystalline silicon deposited on freshly-etched silicon andD=1.66 exp (−3.22/kT) for the deposition on silicon having natural oxide. At the interface to the single-crystalline silicon, a pile-up of arsenic occurs, which depends also on the surface treatment prior to the deposition of the polycrystalline silicon.     

Influence of air layers and damping layers between gypsum boards on sound transmission

In this paper the influence on sound reduction index of a thin air layer between gypsum board layers of lightweight partitions has been examined. It has been shown that the air layer between gypsum boards causes a decrease in sound reduction index due to mass-air-mass resonance. When the thin air layer is filled with a damping layer, the sound reduction index is increased for frequencies around the critical frequencies. Predictions show similar effects to those measured.     

Ellipsometry of mass-transport boundary layers

The effect of mass-transport boundary layers, that are often associated with surface reactions proceeding at high rates, on ellipsometer measurements of the underlying surface has been investigated for typical transport conditions in liquids. The effect can be of significant extent and depends primarily on concentration difference across the boundary layer, angle of incidence and optical constants of the surface. A simplified method for predicting boundary-layer effects based on light refraction is introduced. Computations are in good agreement with experiments.     

Morphological evolution of SiGe layers

Extensive research activity has been devoted to self-assembly of very small coherent islands. However, while island formation is commonly described by a widely used S-K growth scheme, more complex mechanisms based on competitive effects of kinetics and thermodynamics take place during the epitaxy of Si_1−xGe_x on Si(0 0 1). The aim of this paper is to explain the formation and the evolution of Si_1−xGe_x islands on Si(0 0 1). The paper presents a comprehensive investigation of the different growth modes of Si_1−xGe_x films (with x varying from 0 to 1) on Si(0 0 1) and Si(1 1 1). The results are presented in the form of kinetic morphological growth diagrams of as-grown samples. Two and four growth regimes are distinguished on (1 1 1) and (0 0 1) respectively. These growth regimes correspond to different levels of relaxation. In particular the four regimes observed on Si(0 0 1) correspond to (i) no relaxation in regime I (2D layer), (ii) 15-20% relaxation in regime II (“huts” islands with (1 0 5) facets), (iii) 20% and 50% relaxation in regime III (in “huts” and “domes” respectively) and (iv) 50% and 80% relaxation in regime IV (“domes” with bimodal size distribution). Every growth regime characteristic of as-grown sample is also associated with a specific equilibrium steady state morphology which is obtained after long-term annealing of the as-grown samples. In the two first regimes (no or small strain relaxation) the equilibrium morphology of highly strained Si_1−xGe_x deposits corresponds to (1 0 5) faceted islands. We show that these islands are stabilised by the compressive stress. As soon as strain is released, (1 0 5) facets disappear at the expense of the (1 1 3) and (1 1 1) facets and first-order transition occurs between “huts” and “domes” islands.     

Thermodynamics of curved boundary layers

A thermodynamic treatment of curved boundary layers is given which closely parallels the conventional theory of curved interfacial layers. The boundary analogs to the Gibbs adsorption isotherm and the Gibbs-Tolman-Koenig-Buff equation are derived.     

Optical properties of nanodiamond layers

Thin ultradisperse diamond (UDD) layers deposited from a water suspension are studied by optical and x-ray photoelectron spectroscopy (XPS). The effective band gap determined by the 10⁴-cm^?1 criterion for ozone-cleaned UDD is 3.5 eV. The broad structureless photoluminescence band (380–520 nm) is associated with radiative recombination through a system of continuously distributed energy levels in the band gap of diamond nanoclusters. The optical absorption of the material at 250–1000 nm originates from absorption on the disordered nanocluster surface containing threefold-coordinated carbon. The surface of UDD clusters subjected to acid cleaning contains nitrogen-oxygen complexes adsorbed in the form of NO ₃ ^? nitrate ions. Annealing in a hydrogen atmosphere results in desorption of the nitrate ions from the cluster surface. The evolution of the oxygen (O1s) and nitrogen (N1s) lines in the XPS spectra under annealing of a UDD layer is studied comprehensively.     

Semiinsulating layers of cadmium telluride

Tin diffusion into cadmium telluride substrates having different types and values of conductivity is used to fabricate layers with a resistivity of ∼10¹⁰ Ω cm at 300 K.     

Renormalization for stochastic layers

Chirikov's standard mapping for stochastic layers is derived in a simpler and more general way. A one-parameter renormalization transformation yields, analytically, many universal quantities defined in a previous renormalization theory. Expressions are given for the width of stochastic layers that correct several previous estimates.     

Evaluation of XPS-data of oxide layers

XPS with variable take-off angle has been applied to the determination of the thickness of thin oxide layers (SiO₂ on Si). The information about D/λ_ox gained by such measurements is strongly influenced by surface roughness. This influence can be demonstrated when the parameters R and D/λ_ox are calculated from sets of the experimental results and for each set the corresponding pair of R and D/λ_ox is plotted in a diagram D/λ_ox = f(R). Having the true value of R it is possible to determine D/λ_ox. With the XPS-results of at least three different oxide layers and their ellipsometric thicknesses D_e one is able to calculate λ_Si, λ_ox/λ_Si and the difference ΔD between D_e and the XPS-thickness D.     

Optical properties of ion-implanted polymer layers

Polyethylene and polyamide-6 films implanted with 100 keV B⁺ ions within the dose range of 1·10¹⁴–1·10¹⁷ cm⁻² are investigated by the methods of optical spectroscopy. It is shown that in the case of ion-implanted polymers, optical absorption is caused by carbon nanoclusters formed in the tracks of bombardment ions. The dynamics of growth of these nanonclusters during ion implantation are studied. The concept of formation of a carbonized ion-implanted layer is suggested, which takes into consideration the formation of lower unsaturated compounds (dienes, trienes) and primitive carbon clusters, cluster growth and formation of saturated and unsaturated intercluster bridge bonds. Moreover, an investigation is made of the side process of compensation of broken carbon bonds due to interaction with atmospheric oxygen. Belarusian State University, 4, F. Skorina Ave., Minsk, 220050, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 3, pp. 377–381, May–June, 1998.     

XPS—Investigation of contamination layers

The ratio (d/Λ) of the average thickness of a contamination layer to the mean free path of the photoelectrons is measured by means of a method utilizing variable take-off geometry. A sample holder, which permits a stepwise variation of the take-off angle from 27.5° to 83.5°, is described. The sample investigated consisted of a thin metal film upon a glass substrate chosen in order to provide a smooth and flat surface upon which a hydrocarbon contamination layer was formed during the measurement. The evaluation of d/Λ was carried out using a graphical procedure suggested by Head¹.     

Microstructure of annealed low-temperature-grown GaAs layers

The crystal structure and orientation of As precipitates in annealed low-temperature GaAs (LT-GaAs) layers have been investigated by transmission electron microscopy. Three types of As precipitates were identified in layers grown by molecular beam epitaxy at substrate temperatures from 180° to 210° C. In the monocrystalline LT-GaAs layers small pseudocubic As precipitates (2–3 nm diameter) coherent with the GaAs lattice were observed. These precipitates lose their coherency when a certain critical size is exceeded. Precipitates of similar sizes are occasionally found for which a TEM lattice image cannot be obtained. These precipitates are believed to be amorphous. Larger As precipitates with a hexagonal structure (>4 nm diameter) were also found in the layers. These hexagonal As precipitates were observed to be largest near structural defects. The effect of these precipitates on the structure and on the electronic properties of the host GaAs is discussed.Dedicated to H.-J. Queisser on the occasion of his 60th birthday