注入电流对垂直腔面发射激光器横模特性的影响

对980nm氧化限制型垂直腔面发射激光器横模进行测试和研究,理论上从时间、空间变量的速率方程出发,利用空间积分法分析了典型电注入参数对弱折射率导引垂直腔面发射激光器(VCSELs)横模行为的影响,通过实验测试,得到VCSELs的横模光场分布情况,并与理论分析进行对比,得出相应的实验结果,在氧化孔径不变的情况下,随着注入电流的增加,载流子分布从有源区中心向边缘移动,模式从低阶基模向高阶模转变,并发生了较强的模式竞争以及载流子空间烧孔效应,最终导致基模强度的降低.另一方面,通过比较不同注入孔径下高阶模的发生时 关键词： 横模 垂直腔面发射激光器 空间烧孔现象 模式竞争     

多横模垂直腔面发射激光器及其波长特性

基于氧化限制型内腔接触垂直腔面发射激光器(VCSEL) 结构设计, 研究了VCSEL的多横模分布及其模式波长分裂特性与氧化孔径尺寸、形状的关系. 在实验基础上, 通过建立有效折射率模型, 并利用标量亥姆霍兹方程的迭代算法理论, 分别对椭圆形氧化孔径和圆形氧化孔径VCSEL的横向模式特性进行模拟研究, 计算得到不同形状孔径的多横模光场分布情况, 同时测量得到高阶横模多频输出光谱. 研究发现, 椭圆氧化孔形状不仅影响横模分布特性, 还会导致每个模式的波长产生分裂, 分裂值可达0.037 nm. 同时, 随着氧化孔径的增大, 波长分裂影响会逐渐减小, 直至趋近于圆形氧化孔径的分布特性. 研究结果为进一步实现氧化限制型VCSEL的多横模锁定提供了有益参考和借鉴.     

垂直腔面发射激光器电、光特性分析

根据增益波导垂直腔面发射激光器(VCSELs)直接耦合的准三维理论模型,通过有限差分法对泊松方程、注入电流密度、载流子浓度和光场分布方程求自洽解,研究了垂直腔面发射激光器的电特性和光波导特性.计算结果表明,氧化限制层位置是影响激光器特性的主要因素之一,如果忽略N型DBR层的影响,将与实际的垂直腔面发射激光器有较大偏差.     

940 nm垂直腔面发射激光器单管器件的设计与制备

计算了InGaAs/AlGaAs量子阱的激射波长与阱垒厚度的关系,并通过Rsoft软件计算了不同温度下的材料增益特性.计算并分析了渐变层厚度对分布布拉格反射镜(distributed Bragg reflectors,DBRs)势垒尖峰及反射谱的影响,通过传输矩阵理论得到P-DBR和N-DBR的反射谱和相位谱.模拟了垂直腔面发射激光器(vertical surface emitting lasers,VCSEL)结构整体的光场分布,驻波波峰与量子阱位置符合,基于有限元分析模拟了氧化层对电流限制的影响.通过计算光子晶体垂直腔面发射激光器(photonic crystal vertical cavity surface emitting lasers,PC-VCSEL)中不同的模式分布及其品质因子Q,证明该结构可以有效地实现基横模输出.通过光刻、刻蚀、沉积、剥离等半导体工艺成功制备出氧化孔径为22μm的VCSEL和PC-VCSEL,VCSEL的阈值电流为5.2 mA,斜率效率0.67 mW/mA,在不同电流光谱测试中均是明显的多横模输出;PC-VCSEL的阈值电流为6.5 mA,基横模输出...     

1550 nm毫瓦级单横模垂直腔面发射半导体激光器

报道了国内首次实现出光功率达到毫瓦量级的单横模1550 nm波段垂直腔面发射半导体激光器(vertical-cavity surface-emitting laser, VCSEL).设计了基于InAlGaAs四元量子阱的应变发光区结构;设计并制备了具有隧穿特性的台面结构,实现了对载流子空穴的高效注入及横向模式调控;采用半导体分布式布拉格反射镜与介质反射镜结合的方式制备了1550 nm VCSEL的反射镜结构. VCSEL中心波长位于1547.6 nm,工作温度为15℃时最高出光功率可达到2.6 mW,最高单模出光功率达到0.97 mW,最大边模抑制比达到35 dB.随着工作温度增加,激光器最高出光功率由于发光区增益衰减而降低,然而35℃下最大出光功率仍然可以达到1.3 mW.激光器中心波长随工作电流漂移系数为0.13 nm/mA,并且激光波长在单模工作区呈现出非常一致的漂移速度,在气体探测领域具有很好的应用潜力.本研究为下一步通过高密度集成获得高功率1550 nm VCSEL列阵奠定了基础.     

纵向耦合对垂直腔面发射激光器的影响

考虑到垂直腔面发射激光器中的光子与载流子的纵向耦合,在行波速率方程中引入了纵向耦合因子。利用这个速率方程,讨论了阀值电流与量子阱数目的关系,计算结果表明光子与载流子的纵向耦合是不容忽视的。给出了阀值电流表达式,它表明纵向耦合因子越大,阀值电流越低。     

垂直腔面发射半导体微腔激光器

评述了垂直腔面发射半导体激光器研究的最新进展,就其结构特点、应变量子阱结构、超晶格镜面和微腔效应作了简要的论述,探讨了进一步降低半导体激光器阈值的途径,介绍了新型的氧化约束型垂直腔面发射半导体激光器,并对微腔激光器中自发辐射增强效应和三维封闭腔的特性给出了描述,同时展望了该器件的应用及发展前景。     

时变电流注入下光电负反馈垂直腔表面发射激光器的偏振双稳特性

基于光电负反馈垂直腔表面发射激光器(VCSELs)的理论模型,数值研究了时变电流注入下反馈率大小和注入电流扫描周期对VCSELs偏振双稳特性的影响.研究结果表明:增大反馈率将使双稳区域向更大电流方向移动,同时双稳区宽度增加;增大注入电流扫描周期将使双稳区宽度减小.因此,通过调整光电负反馈的大小以及注入电流的扫描周期,可实现对VCSELs偏振双稳特性的控制.     

基于1550 nm垂直腔面发射激光器的长距离双向双信道光纤混沌保密通信研究

基于同一混沌信号光注入下两个1550 nm垂直腔面发射激光器 (VCSELs) 中两对应线性偏振模式之间的混沌同步, 提出了一种可实现信息的长距离双向双信道光纤混沌保密通信的系统模型, 并对该系统的同步、双向双信道通信以及光纤信道对信息传输的影响等性能进行了相关仿真研究. 结果表明: 在由驱动混沌激光器所产生的同一混沌光注入下, 两响应激光器中对应的两线偏振模式之间均可实现高质量的等时混沌同步, 且驱动激光器与两响应激光器间的同步系数较低; 基于两响应激光器之间对应线偏振模式的高质量混沌同步, 可实现双向双信道混沌通信; 采用单模保偏光纤 (或色散位移保偏光纤) 作为通信信道, 2.5 Gbit/s信息在传输60 km (或200 km) 后解调信息的Q因子能保持在6以上. 关键词： 垂直腔面发射激光器 (VCSELs) 双向双信道 混沌通信 光纤     

光子晶体垂直腔面发射激光器的电流分布研究

对氧化限制型外腔式光子晶体垂直腔面发射激光器注入到有源区的电流密度分布进行了分析研究.提出三维电流分布计算模型,研究了光子晶体结构对电流密度分布和器件串联电阻的影响.研究发现,光子晶体孔刻蚀深度越深,电流分布圆对称性越差,引起的串联电阻越大.不同光子晶体图案对电流分布的均匀性和圆对称性也有很大的影响.该模型对于研究、设计氧化限制型外腔式光子晶体垂直腔面发射激光器提供了一个有用的分析方法.     

Numerical Investigation of the Effects of the Injection Current on the SHB-Effects of VCSEL''s

A spatially independent model of vertical-cavity surface-emitting lasers (VCSEL's) is built up in this paper by integrating the spatially dependent rate equations over the cross section of the active reigon of VCSEL's. The LP cosine modes in a weakly guiding cylindrical waveguide are used to represent the transverse modes in the VCSEL's cavity. This model is performed numerically with the 4^th order Runge-Kutta method in a self-consistent way. The dynamic and steady state characteristics of the multi-transverse mode competitions are investigated in detail. Different kinds of injection currents such as a disk-contact and ring-contact injection current are employed in these numerically implementations. Some interesting results are obtained and analyzed detailedly.     

Influences of the Current Transverse Profile on the Transverse Mode Competition of VCSELs Diodes

A spatially independent model of vertical-cavity surface-emitting lasers (VCSELs) is derived by integrating the spatially dependent rate equations over the cross section of the cavity of a VCSEL. The angular and radial non-uniformities of the injection current are taken into account. The well-known LP modes of a weakly-guiding cylindrical waveguide are employed to describe the transverse modal structure in the VCSEL cavity. This model is solved in a self-consistent way by using the 4th order Runge-Kutta method. The dependence of transverse mode competition on the current intensity, the angular and radial non-uniformities of the injection current, and the geometrical parameters of the electrical contact are thoroughly investigated and analyzed. The results are useful to the optimum design of the optical transverse modal structure of VCSELs.     

Nonlinear dynamics and localized synchronization in mutually coupled VCSELs

Nonlinear dynamics of mutually coupled vertical-cavity surface-emitting lasers (VCSELs) are studied theoretically. We consider both identical and nonidentical cases, respectively. For identical cases, where the device parameters and the operating conditions are the same, both lasers show the same behaviors with an identical output, and some typical nonlinear states, including period-one, period-two, multi-period and chaos, are observed. However, for nonidentical cases, the symmetric behaviors are broken. Due to the mismatch of the bias current of these two lasers, the system nonlinearity is increased and the synchronization performance is degraded greatly. Nevertheless, it is found that the coupled VCSELs can still exhibit a form of localized synchronization when they operate under the periodic state introduced by either the weak coupling or the frequency detuning.     

Power-induced polarization switching and bistability characteristics in 1550-nm VCSELs subjected to orthogonal optical injection

The polarization switching(PS) and polarization bistability(PB) characteristics of a 1550-nm vertical-cavity surfaceemitting laser(VCSEL) subjected to orthogonal optical injection are systematically investigated.The simulated results show that the PS and polarization-resolved nonlinear dynamical states of the VCSEL are critically dependent on the changing paths of the injected power.The polarization dynamics for different scanning directions of the injected power is presented to explain the polarization evolution during the formation of PS.In the case of forward scanning injected power,with the increase of frequency detuning level between the VCSEL and the injected light,the injected power required for PS gradually increases for negative frequency detuning but exhibits fluctuations for positive frequency detuning.In the case of reversely scanning injected power,the injected power required for PS displays fluctuant changes within the whole frequency detuning range.Specifically,PS may disappear under certain negative frequency detuning and large bias current.Furthermore,the hysteresis width as a function of the frequency detuning is calculated,and the regions for the appearance and disappearance of PB have been determined in the parameter space of the bias current and frequency detuning.     

Polarization and Transverse Mode Behaviour of VCSELs under Optical Injection

A theoretical analysis of the polarization and transverse modes of Vertical-cavity Surface-emitting lasers with external optical injection is performed. We show that, for single-mode operation, weak injection of linearly polarized light can lead to stable output power in the injected polarization. We also show that, for multitransverse mode operation, weak injection of linearly-polarized light can lead to stable emission of the fundamental transverse mode in the injected polarization over wide current ranges. The previous selection can occur when the transverse modes have parallel or orthogonal polarizations.     

增益导波垂直腔激光器注入电流空间分布及其对激光近场模式影响的理论分析和表征

依据导电介质的稳态电场理论建立了一种对增益导波型垂直腔半导体激光器注入电流矢量分析的三维解析模型. 计算研究了电流密度空间分布及其与顶面电注入环参量之间的相互关联性. 结果显示在两极之间存在一个载流子径向分布中心极大的区域. 由于激光功率与注入电流之间存在线性关系,因此,要使器件能够获得基模或中心均匀的光强输出以及尽可能低的阈值,应使激光有源层与载流子均匀分布的临界层重合. 计算结果对顶发射与底发射结构以及不同环参数下的载流子分布情况及对近场模式形成的影响进行了分析和讨论. 关键词： 垂直谐振腔激光器 注入电流 激光模式     

Mode-Stabilized Operation in a Microlens-Integrated 980 nm Vertical-Cavity Surface-Emitting Laser

Microlens-integrated 980 nm vertical-cavity surface-emitting lasers (VCSELs) were fabricated and their mode-stabilized operations investigated. A stable single fundamental transverse mode operation in the microlens-integrated VCSEL was observed. Numerical modal calculations accurately explain the effects of the microlens on mode stabilization.     

混沌光注入垂直腔面发射激光器混沌输出的时延和带宽特性

提出并仿真论证了利用一个双光反馈垂直腔面发射激光器(定义为主VCSEL,M-VCSEL)产生的混沌光平行单向注入到另一个VCSEL(定义为副VCSEL,S-VCSEL)使所产生的混沌信号的延时特征(TDS)和带宽特性得以优化的技术方案.首先,基于VCSELs自旋反转模型,结合自相关分析方法,通过对系统参量进行优化,可使双光反馈M-VCSEL的X偏振分量(X-PC)和Y偏振分量(Y-PC)均输出混沌信号,且两路混沌信号的平均强度相当、TDS均较弱;在此基础上,将双光反馈M-VCSEL在优化条件下得到的混沌信号平行单向注入到S-VCSEL中,以获得两路TDS得到抑制、带宽更宽的混沌信号.通过考察两个偏振分量输出混沌信号的TDS以及混沌带宽在注入强度和频率失谐构成的参数空间的演化规律,确定了系统获取两路TDS被抑制、宽带宽的混沌信号所需的注入参数范围.