Use of surface acoustic waves for analysis of gases and surface processes induced by them

An analytical expression for the magnitude of the “response” of surface acoustic waves (SAWs) to gases is obtained. It is tested experimentally. The main features of the detection of gases by means of SAWs are predicted theoretically and confirmed experimentally. The SAWs in coated and uncoated gas sensors are compared. A technique for using SAWs to determine the relative changes in the density (Δρ/ρ) and the elastic moduli (ΔC ₁₁/C ₁₁ and ΔC ₄₄/C ₄₄) of films upon the adsorption (desorption) of gases is proposed. The possibility of using this technique to analyze adsorption and desorption processes is demonstrated. The adsorption properties of polycrystalline, thermally deposited palladium films before and after low-temperature vacuum annealing, as well as unannealed Pd and Pd:Ni films, are compared. The prospects of using SAWs to detect gases and to study surface processes induced by them are discussed. Zh. Tekh. Fiz. 68, 73–81 (February 1998)     

Anomalous Hall effect in granular Fe/SiO2 films in the tunneling-conduction regime

It is established that the Hall effect in Fe/SiO₂ nanocomposite films in the activational tunneling conduction range is anomalous, i.e., the Hall resistivity ρ_h is proportional to the magnetization and is due to the spin-orbit interaction. The parametric coupling of the Hall and longitudinal (ρ_xx) resistances ρ_h ∝ ρ _xx ^m (with temperature as the parameter) is characterized by a much lower value of the exponent m than in a uniform ferromagnetic metal. This circumstance is attributed to the characteristic features of the Hall effect mechanism in the hopping regime — in our case, the interference of the amplitudes of tunneling transitions in a set of three granules. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 2, 87–92 (25 July 1999)     

ωN final state interactions and ω-meson production from heavy-ion collisions

We calculate the elastic and inelastic ωN→ωN, →πN, →ρN, →ρπN, →ππN, →σN reactions within a boson exchange approximation where the ωρπ coupling constant and form factor are fixed by the reaction πN→ωN in comparison to the experimental data. We find rather large ωN cross sections at low relative momenta of the ω-meson which leads to a substantial broadening of the ω-meson width in nuclear matter. The implications of the ωN final state interactions are studied for ω production in ¹²C +¹²C, ⁴⁰Ca +⁴⁰Ca and ⁵⁸Ni +⁵⁸Ni reactions at about 2 · A GeV within the HSD transport approach; the drastic changes of the transverse mass spectra relative to a general m _T-scaling (for π⁰ and η mesons) might be controlled experimentally by the TAPS Collaboration. Received: 28 April 1999 / Revised version: 7 June 1999     

Variations in the electrical resistivity of La0.67Ca0.33MnO3 films and induced interconversions of ferromagnetic and nonferromagnetic inclusions in their bulk

A significant (∼1.8%) positive unit between the parameters of the crystal lattice is the reason of tetragonal distortion (a _⊥/a _‖ ≈ 1.04) and reduction in the volume of the unit cell of La_0.67Ca_0.33MnO₃ films (15 nm) quasicoherently grown on the (001) surface of a LaAlO₃ substrate. The films consist of single-crystal blocks with the lateral size of 30–50 nm. The atomically smooth LaAlO₃-La_0.67Ca_0.33MnO₃ interphase boundary has no misfit dislocations. At T = 4.2 K, the transformation of nonferromagnetic phase inclusions into ferromagnetic ones in a constant magnetic field H is accompanied by a stable reduction in the electrical resistivity ρ of manganite films with time, so that the curve ρ(t) is well approximated by the relationship ρ(t) ∼ ρ₁(t − t ₀)^1/2, (where t ₀ is the time for establishment of the specified value (μ₀ H = 5 T) of the magnetic field and ρ₁ is a coefficient independent of H). The magnetocrystalline anisotropy due to the elastic deformation of films by the substrate and stratification of electronic phases are the reasons of the distinct hysteresis in the dependences ρ(μ₀ H, T < 100 K) obtained on μ₀ H scanning in the sequence 5 T → 0 → −5 T → 0 → 5 T. At T = 50 K and μ₀ H = 0.4 T, the magnetoresistance MR = 100% [ρ(μ₀ H) − ρ(μ₀ H = 0)]/ρ(μ₀ H = 0) of LCMO films attains 150%.     

New perovskite oxides LaBa<Emphasis Type="Italic">M</Emphasis>CoO<Subscript>5 + δ</Subscript> (<Emphasis Type="Italic">M</Emphasis> = Fe,Cu): Synthesis,structure, and properties

The electrical resistivity ρ and the thermopower S of ceramic materials LnBaCuFeO_{5 + δ} (Ln= La, Pr, Nd, Sm, Gd-Lu) are measured in air at temperatures in the range from 300 to 1100 K. All the studied ferrocuprates are p-type semiconductors. The electrical resistivity ρ and the thermopower S of these compounds increase with a decrease in the radius of the Ln ³⁺ cation (with an increase in the number of 4f electrons n in Ln ³⁺). The nonmonotonic behavior of the dependences ρ=f(n) and S=f(n) indicates that the electrical properties of the layered ferrocuprates LnBaCuFeO_{5 + δ} depend on the electronic configuration of the Ln ³⁺ cation. The power factors P calculated for the LnBaCuFeO_{5 + δ} ceramic materials from the experimental values of ρ and S increase with increasing temperature and, at T = 1000 K, reach the maximum values P = 102.0 and 54.1 μW m⁻¹ K⁻² for Ln = Pr(4f ²) and Sm(4f ⁵), respectively, and become close to each other and equal to 30–35 μW m⁻¹ K⁻² for Ln = Gd(4f ⁷), Dy(4f ⁹), and Ho(4f ¹⁰).     

Lattice mechanical properties of noble and transition metals

A model pseudopotential depending on an effective core radius but otherwise parameter free is used to study the interatomic interactions, phonon dispersion curves (inq and r-space analysis), phonon density of states, mode Grüneisen parameters, dynamical elastic constants (C ₁₁,C ₁₂ andC ₄₄), bulk modulus (B), shear modulus (C′), deviation from Cauchy relation (C ₁₂–C ₄₄), Poisson’s ratio (σ), Young’s modulus (Y), behavior of phonon frequencies in the elastic limit independent of the direction (Y ₁), limiting value in the [110] direction (Y ₂), degree of elastic anisotropy (A), maximum frequencyω _max, mean frequency 〈ω〉, 〈ω ²〉^1/2=(〈ω〉/〈ω ⁻¹〉)^1/2, fundamental frequency 〈ω ²〉, and propagation velocities of the elastic constants in Cu, Ag, Au, Ni, Pd, and Pt. The contribution of s-like electrons is calculated in the second-order perturbation theory for the model potential while that of d-like electrons is taken into account by introducing repulsive short-range Born-Mayer like term. Very recently proposed screening function due to Sarkar et al. has been used to obtain the screened form factor. The theoretical results are compared with experimental findings wherever possible. A good agreement between theoretical investigations and experimental findings has proved the ability of our model potential for predicting a large number of physical properties of transition metals.     

Electric field gradient in transitional dilute alloys

The electric field gradient (EFG) and the asymmetry parameter (η) due to transition metal impurities in the host metals Al, Cu and V are investigated. The valence EFG is formulated using dielectric screening theory in conjunction with pseudopotential theory. The size EFG is evaluated in the elastic continuum limit for a screened point charge model of the host metal. The detailed calculations are carried out forAl (Sc, Fe, Cr),Cu (Ni, Pd, Pt) andV (Ti, Cr, Fe, Nb, Ta, W) alloys.     

Entanglement entropy fluctuations in quantum Ising chains

The behavior of Ising chains with the spin-spin interaction value λ in a transverse magnetic field of constant intensity (h = 1) is considered. For a chain of infinite length, exact analytical formulas are obtained for the second central moment (dispersion) of the entropy operator Ŝ = -lnρ with reduced density matrix ρ, which corresponds to a semi-infinite part of the model chain occurring in the ground state. In the vicinity of a critical point λ_c = 1, the entanglement entropy fluctuation ΔS (defined as the square root of dispersion) diverges as ΔS ∼ [ln(1/|1 − λ|)]^1/2. For the known behavior of the entanglement entropy S, this divergence results in that the relative fluctuation δS = ΔS/S vanishes at the critical point, that is, a state with almost nonfluctuating entanglement is attained.     

The mystery of the alkali metals; the induced anomalous Hall effect in thin Cs films

Sandwiches made from Fe and Cs films are investigated as a function of the magnetic field and the Cs thickness. Conduction electrons which cross from the Fe to the Cs are marked by a drift velocity component perpendicular to the electric field. The anomalous Hall effect in the Fe provides this “non-diagonal” kick to the electrons that cross from the Fe into the Cs. The ballistic propagation of the conduction electrons can be monitored as a function of the Cs film thickness. The free propagation into the Cs is measured in terms of the non-diagonal conductance L_xy which we denote as the “induced anomalous Hall conductance”L _xy ⁰. For a normal (non-magnetic) metal in contact with Fe, L_xy increases with the thickness of the normal metal until the film thickness exceeds (half) the mean free path of the conduction electrons. For Cs on top of Fe the induced anomalous Hall conductance increases up to a Cs coverage of about 100 A, then, in contrast to other non-magnetic metals, L _xy ⁰ decreases for larger Cs coverage and approaches zero. This behavior cannot be explained with the free electron model. The strange behavior of the induced AHC in Cs films adds an even more challenging mystery to the already poorly understood properties of thin Cs films. These results defy explanation in the free electron model. Received 29 April 1999 and Received in final form 10 July 1999     

Development of magnetic anisotropies in ultrathin epitaxial films of Fe(001) and Ni(001)

Ultrathin films, bcc Fe(001) on Ag(001), fcc Fe(001) on Cu(001) and Fe/Ni(001) bilayers on Ag, were grown by molecular beam epitaxy. A wide range of surface science tools were employed to establish the quality of epitaxial growth. Ferromagnetic resonance and Brillouin light scattering were used to extract the magnetic properties. Emphasis was placed on the study of magnetic anisotropies. Large uniaxial anisotropies with easy axis perpendicular to the film surface were observed in all ultrathin structures studied. These anisotropies were particularly strong in fcc Fe and bcc Fe films. In sufficiently thin samples the saturation magnetization was oriented perpendicularly to the film surface in the absence of an applied field. It has been demonstrated that in bcc Fe films the uniaxial perpendicular anisotropy originates at the film interfaces. In situ measurements indentified the strength of the uniaxial perpendicular anisotropy constant at the Fe/vacuum, Fe/Ag and Fe/Au interfaces asK _us = 0.96, 0.63, and 0.3 ergs/cm² respectively. The surface anisotropies deduced for [bulk Fe/noble metal] interfaces are in good agreement with the values obtained from ultrathin films. Hence the perpendicular surface ansiotropies originate in the broken symmetry at abrupt interfaces. An observed decrease in the cubic anisotropy in bcc Fe ultrathin films has been explained by the presence of a weak 4th order in-plane surface anisotropy,K _1S=0.012 ergs/cm². Fe/Ni bilayers were also investigated. Ni grew in the pure bcc structure for the first 3–6 ML and then transformed to a new structure which exhibited unique magnetic properties. Transformed ultrathin bilayers possessed large inplane 4th order anisotropies far surpassing those observed in bulk Fe and Ni. The large 4th order anisotropies originate in crystallographic defects formed during the Ni lattice transformation.     

A size effect in the optical properties of powdered TiO2

The spectral reflectivity ρ in the region 0.36–2.1 μm and its change Δρ with irradiation by 30 keV electrons versus the average grain sizer _av in a TiO₂ (rutile) powder has been studied in the range 1–7.5 μm. It has been established that the dependence of ρ onr _av differs for different regions of the spectrum, but there is a common increase of ρ in the size range 2.5–4 μm. The value of Δρ after irradiation is also less in powders with this range of sizes. It has been shown that the dependence Δρ=f(r _av) with increasing electron fluence from 2·10¹⁵ to 4·10¹⁶ is strengthened for one band and weakened for another. Tomsk Polytechnic University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 41, No. 12, pp. 52–58, December, 1998.     

ππ scattering and the meson resonance spectrum

A ππ, ˉKK, and ρρ(ωω) fully coupled channel model is used to predict the lowest isospin S, P, D, F-wave phase shifts and inelasticities for elastic ππ scattering from threshold to 2.0 GeV. As input the S-matrix is required to exhibit poles corresponding to the meson resonance table of the Particle Data Group. As expected, the ππ inelasticity is very strongly related to the opening of the ˉK channel near 1 GeV, and the opening of ρρ(4π) and ωω(6π) channels in the 1.5 GeV region. The predictions of this model are compared to the various elastic ππ→ππ amplitudes, that were obtained from analyses of π⁻ p →π⁻π⁺n data. The role of the various resonances, in particular the glueball candidate f ₀(1500) and the f _J(1710) is investigated. Received: 19 November 1997     

Equation for the Landauer resitivity in the case of multichannel scattering

Generalization of the Landauer resistivity ρ _N ^L is given for the case of multichannel scattering of a particle by the system of nonoverlapped N random potentials, depending on x − x _i and y, which are localized near the points x _i (i = 1,2,…N). It is shown that in this case a new resistivity ρ _N ^S appears, which is a power function of N. A recurrent equation is obtained for definition of the Landauer resistivity ρ _N ^L .     

Quantum transport studies of electron accumulation layers in InSe bulk crystals

Summary Experiments show that the Hall resistivityρ _xy of InSe bulk crystals is quantized into integer multiples ofh/e ². Quantum Hall effect in InSe is explained as a result of plane defects in InSe crystals. The electrons in bulk InSe are localized at these defects at low temperatures forming regions with two-dimensional conductivity. Concentration of electrons in these regions isN _2D=2·10¹¹ cm⁻² and their mobility μ=2·10⁴cm²/V·s. To speed up publication, the authors of this paper have agreed to not receive the proofs for correction.     

Salient features of the electrical characteristics of oxygen-implanted gallium arsenide Schottky-barrier structures

We have studied the deep levels in gallium arsenide implanted with oxygen ions at a low dose of 2·10¹⁰ cm⁻² and the influence of those levels on the current-voltage characteristics of Ni/Pd/Ga Schottky-barrier structures. The deep levels were checked by the thermally-stimulated-current (TSC) method. The number of peaks on the TSC curves and their amplitudes are shown to depend on the oxygen-ion energy and the temperature of the post-implantation anneal. An important role in the formation of centers associated with oxygen is played by gallium diffusion into the protective SiO₂/Si₃N₄ insulator layer as well as by elastic and plastic strain phenomena that occur during deposition of the coating and post-implantation annealing of the specimens. The deep levels due to oxygen are responsible for the appearance of excess currents resulting from recombination as well as for ohmic leakages. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 30–36, May, 1996.     

Electronic topological transition in an <Emphasis Type="Italic">n</Emphasis>-BiSb semiconductor alloy in the quantum limit range of magnetic fields for H‖<Emphasis Type="Italic">C</Emphasis><Subscript>2</Subscript>

The galvanomagnetic properties of single-crystal samples of the Bi_0.93Sb_0.07 semiconductor alloy with the electron density n = 1.6 × 10¹⁷ cm⁻³ in magnetic fields up to 14 T at T = 1.6 K have been investigated. The resistivity ρ and Hall coefficient R have been measured as functions of the magnetic field directed along the binary axis of a crystal for a current flowing through a sample along the bisector axis; i.e., the components ρ₂₂ and R _{32, 1} have been measured. The strong anisotropy of the electron spectrum of the samples makes it possible to separately observe quantum oscillations of the magnetoresistance ρ₂₂(H) for H ‖ C ₂ in low magnetic fields for two equivalent ellipsoids with small extremal cross sections (secondary ellipsoids) and in high magnetic fields for electrons of the ellipsoid with a large extremal cross section (main ellipsoid). An increase in the energy of the electrons of secondary ellipsoids in the quantum limit magnetic fields is accompanied by the flow of electrons to the main ellipsoid; i.e., an electronic topological transition occurs from the three-valley electron spectrum to the single-valley one. After the flow stops, the Fermi energy E _F increases from 18 meV to 27.8 meV. With an increase in the quantizing magnetic field, the Fermi energy of the electrons decreases both in the region of quantum oscillations of the resistance that are attributed to the electrons of the secondary ellipsoids and in the region of oscillations associated with the electrons of the main ellipsoid. The Hall coefficient R _{32, 1} decreases in high magnetic fields; this behavior indicates the absence of the electron magnetic freezing effect.     

Exact Results for Thermodynamics of the Hydrogen Plasma: Low-Temperature Expansions Beyond Saha Theory

We study hydrogen in the Saha regime, within the physical picture in terms of a quantum proton-electron plasma. Long ago, Saha showed that, at sufficiently low densities and low temperatures, the system behaves almost as an ideal mixture made with hydrogen atoms in their groundstate, ionized protons and ionized electrons. More recently, that result has been rigorously proved in some scaling limit where both temperature and density vanish. In that Saha regime, we derive exact low-temperature expansions for the pressure and internal energy, where density ρ is rescaled in units of a temperature-dependent density ρ ^* which controls the cross-over between full ionization (ρ ≪ ρ ^* ) and full atomic recombination (ρ≫ρ ^* ). Each term reduces to a function of ρ/ρ ^* times temperature-dependent functions which decay exponentially fast when temperature T vanishes. Scaled expansions are ordered with respect to the corresponding decay rates. Leading terms do reduce to ideal contributions obtained within Saha theory. We consistently compute all corrections which are exponentially smaller by a factor exp (β E _H ) at most, where E _H is the negative groundstate energy of a hydrogen atom and β=1/(k _B T). They include all effects arising from both the Coulomb potential and the quantum nature of the particles: excitations of atoms H, formation of molecules H ₂, ions H ₂⁺ and H ⁻, thermal and pressure ionization, plasma polarization, screening, interactions between atoms and ionized charges, etc. Scaled low-temperature expansions can be viewed as partial resummations of usual virial expansions up to arbitrary high orders in the density.     

Fe掺杂对溶胶凝胶法制备的ZnO: Ni薄膜结构及发光特性的影响

采用溶胶凝胶法在玻璃基片上制备了ZnO及Ni, Fe共掺杂的Zn_0.95-xNi_0.05Fe_xO (x=0, 0.005, 0.01, 0.03, 0.05) 薄膜. 通过扫描电镜(SEM) 和X射线衍射(XRD) 研究了薄膜样品的表面形貌和晶体结构. 结果表明所有样品都具有(002) 择优取向, Fe掺杂导致ZnO: Ni薄膜的晶体质量变差, 晶粒尺寸减小, 但适当的Fe掺杂有利于获得致密、 均匀的薄膜. XPS测试结果表明样品中Ni离子的价态为+2价, Fe离子的价态为+2价和+3价.室温光致发光(PL) 测量表明, 所有样品均观察到较强的紫外发光峰, 蓝光双峰和绿光发光峰. ZnO: Ni薄膜的发光强度可以通过Fe掺杂进行有效调节. 进而我们讨论了Ni, Fe共掺杂ZnO样品的发光机理.     

Test of the universal rise of hadronic total cross sections at super-high energies

The increase of the total cross sections at very high energies described by log²(s/s₀) appears to be confirmed. In the analysis of the COMPETE collaboration in the Particle Data Group (2006), the Blog²(s/s₀) was assumed to extend the universal rise of all the total hadronic cross sections to reduce the number of adjustable parameters. We test if the assumption on the universality of B is justified, through investigation of the values of B for π^±p(K^±p) and p̄p,pp scatterings. We search for the simultaneous best fit to the σ_tot and ρ ratios, using a constraint from the FESR of the P^′ type for π^∓p scatterings and constraints that are free from the unphysical regions for the p̄p,pp and K^±p scatterings. By including rich information of the low-energy scattering data owing to the use of FESR, the errors of the B parameters decrease especially for πp. The resulting value of B_pp is consistent with B_πp within two standard deviations, which appears to support the universality hypothesis. PACS 11.55.Hx; 13.85.Lg     

πNN Dynamics in pp → pp,pp →πd and πd →πd Processes Below 1 GeV

pp and πd scattering and pp →πd reaction processes at incident proton laboratory energies T _L ≤ 1 GeV are studied in the framework of πNN dynamics. For this purpose three-body calculations are performed with the πN interaction in the P ₁₁, P ₃₃, S ₁₁ and S ₃₁ states and NN forces in the ³ S ₁ -³ D ₁, ¹ S ₀, and ³ P ₂ states. In addition, the backward-going pion contribution at the πNΔ vertex, the πN-ρN coupling, the heavy-meson exchanges in the NN → NN driving term, and the effect of the off-shell structure in the πN-ρN P ₃₃ interaction are taken into account. Received March 28, 1994; revised July 29, 1994; accepted for publication August 31, 1994