表面修饰的ZnS:Mn量子点的发光性质及其对生物分子的检测

采用水热法制备了ZnS:Mn量子点,探讨了掺杂离子浓度对ZnS:Mn量子点的晶体结构和发光性质的影响。通过荧光光谱对样品进行表征。结果表明:掺杂离子的摩尔分数达到2%时,ZnS:Mn量子点在595 nm附近的发光最强;继续增加掺杂浓度反而出现荧光猝灭的现象。本文还研究了表面修饰对量子点形貌和发光性质的影响。通过透射电子显微镜(TEM)观察样品的形貌,发现经过3-巯基丙酸(MPA)修饰后的样品表面团聚现象得到改善,并且尺寸单一、单分散性较好,平均粒径约为5 nm。经过修饰后的样品减少了表面非辐射性缺陷中心,使掺杂Mn2+所引起的595 nm附近的发射峰强度增大。将MPA修饰后的ZnS:Mn量子点与牛血清白蛋白(BSA)分子进行生物偶联,并利用BCA法对偶联上的蛋白含量进行定量检测,结果显示经过修饰后的量子点偶联蛋白的能力更强。     

发光光谱研究不同粒径CdS量子点与钴肟分子间的电荷转移

本文使用稳态及时间分辨发光光谱研究CdS量子点-钴肟(CoⅢ(dmgH)2(3-(OH)py)Cl)分子耦合光催化产氢体系中CdS量子点粒径大小在CdS-钴肟分子间电荷转移中的作用。粒径为3.9,4.4和5.0nm的CdS量子点都表现出带边发光及长波处的橙色缺陷发光。随CdS量子点粒径的减小,带边发光减弱,缺陷发光增强,且小粒径量子点表现出了更长的发光寿命。钴肟分子的引入迅速猝灭CdS量子点的带边发光和缺陷发光,且缺陷发光的猝灭常数比带边发光更大。CdS量子点的粒径越小,发光猝灭的效率越高。这些结果证明,CdS量子点的自由载流子和束缚载流子都可以转移到钴肟分子上,且束缚载流子的转移效率更高。CdS量子点粒径越小,CdS向钴肟分子的光生电荷转移效率越高。     

不同厚度CdSe阱层的表面上自组织CdSe量子点的发光性质

利用变温和变激发功率分别研究了不同厚度CdSe阱层的自组织CdSe量子点的发光。稳态变温光谱表明:低温下CdSe量子阱有很强的发光,高温猝灭,而其表面上的量子点发光可持续到室温,原因归结于量子点的三维量子尺寸限制效应;变激发功率光谱表明:量子点激子发光是典型的自由激子发光,且在功率增加时。宽阱层表面上的CdSe量子点有明显的带填充效应。通过比较不同CdSe阱层厚度的样品的发光,发现其表面上量子点的发光差异较大,这可以归结为阱层厚度不同导致应变弛豫的程度不同,直接决定了所形成量子点的大小与空间分布^[1]。     

ZnCuInS量子点的变温光致发光

测量了红色和深红色发光的ZnCuInS量子点在100~300 K温度范围内的光致发光光谱,研究了ZnCuInS量子点的发光机理,对ZnCuInS量子点的发光峰值能量、线宽和积分强度与温度的关系进行了细致的分析。在ZnCuInS量子点中观察到一种反常的发光峰值能量随着温度升高而增加的现象,同时发现ZnCuInS量子点的发光线宽很宽,约为300 meV,拟合积分强度与温度的关系曲线所得到的激活能为100 meV。这些结果表明,ZnCuInS量子点的发光不可能只来源于一种发光中心,而应该是来源于ZnCuInS量子点内部及表面的多种缺陷相关的多种发光中心组合。     

硅包覆上转换纳米晶制备和表征及生物特异性标记研究

以NaYF₄为代表的上转换纳米晶作为细胞及组织标记的研究越来越热。但易团聚,水溶性、生物兼容性差,没有与生物偶联官能团等缺点限制了其应用,因而表面修饰显得尤为重要。作者通过水热和共沉淀相结合方法,制备了NaYF₄∶Yb3+, Er3+上转换纳米晶,并对其包覆二氧化硅壳层。SEM表征硅包覆前后分别为25和250 nm的单分散粒子,说明硅已成功地包覆于纳米晶表面。980 nm激光照射下,样品的PBS胶体溶液呈可视上转换绿光。上转换荧光光谱和寿命均表明二氧化硅壳层对其发光性质影响很小。圆二色谱说明蛋白分子通过戊二醛与纳米晶偶联前后的二级结构基本不变。基于硅片上的抗原抗体荧光免疫识别试验进一步验证了偶联蛋白分子的特异性,表明该上转换纳米晶适合于生物标记。     

CdSe/ZnSe量子点在油水两相体系下的聚合物包覆相转移及其光谱表征

采用油水两相溶液体系,借助于双亲聚合物包覆实现了CdSe/ZnSe核壳结构量子点自油相到水相的相转移。油水两相中的聚合物包覆与已经报道的均相溶液中聚合物包覆量子点的方法不同,包覆过程在油水两相界面处完成,有效地减少了聚合物缠绕引起的量子点团聚,实现了聚合物对量子点的无团聚单分散包覆。透射电镜和激光粒度分析仪对聚合物包覆量子点的表征结果表明获得的水溶性量子点具有良好的分散性,均一的水力尺寸。吸收和发射光谱表明聚合物包覆过程对量子点的发射峰位和峰型没有引起明显的改变,维持了较高的量子产率。通过荧光微区成像技术成功实现了对人IgG蛋白的特异性检测,证实这种方法获得的聚合物包覆量子点具有较好的与生物分子偶联的功能化基团,适合于生物学标记应用。     

Au纳米颗粒和CdTe量子点复合体系发光增强和猝灭效应

利用金属蒸发真空多弧离子源注入机, 将Au离子注入到高纯石英玻璃来制备镶嵌有Au 纳米颗粒的衬底材料, 随后将化学方法合成的CdTe量子点旋涂在玻璃衬底上制备了Au纳米颗粒和CdTe量子点复合体系. 通过对镶嵌有Au纳米颗粒的衬底进行热退火处理来控制Au纳米颗粒的生长和分布, 系统研究了Au纳米颗粒的局域表面等离子体共振对CdTe量子点光致发光性能的影响. 利用光学吸收谱、原子力显微镜、透射电子显微镜和光致发光谱对样品进行了表征和测试. 光致发光谱表明, Au纳米颗粒的局域表面等离子体对CdTe量子点的发光有增强效应也有猝灭效应. 深入分析了Au纳米颗粒和CdTe量子点之间的相互作用过程, 提出了关于Au-CdTe 纳米复合体系中CdTe 发光增强和猝灭的新机理. 该实验结果为利用金属纳米颗粒表面等离子体技术制备高发光性能的光电子器件提供了较好的参考.     

脉冲功率对含硅量子点SiCx薄膜物相结构及光谱特性的影响

基于硅量子点（Si-QDs）的全硅叠层太阳电池被认为是最有潜质的高效太阳电池之一。目前所报道的硅量子点薄膜存在硅量子点数密度低、缺陷多等问题,限制了硅量子点太阳电池的光电转换效率。微波退火(microwave annealing, MWA)被认为是一种有益于制备纳米结构材料的方法。微波退火的非热效应可以降低形核能,改善薄膜的微结构和光电性能。因此,采用磁控共溅射技术并结合微波退火工艺,在不同的脉冲功率下制备了含硅量子点SiC_x薄膜;采用掠入射X射线衍射(GIXRD)、拉曼(Raman)光谱、紫外-可见-近红外分光光度计和光致发光(PL)光谱表征薄膜的物相结构及光谱特性;研究不同脉冲功率对硅量子点数密度和性能的影响,进而改进磁控共溅射工艺,制备硅量子点数密度较高和性能良好的薄膜。样品的GIXRD谱和Raman谱均显示其中存在硅量子点,其强度先增大后减小;通过谢乐(Scherrer)公式估算出硅量子点尺寸呈现先增大后减小的规律,脉冲功率为80 W时尺寸达到最大(8.0 nm）。在Raman光谱中还观察到中心位于511 cm-1处出现硅量子点Si-Si横向光学振动模式的拉曼峰,其强度也呈现先增大后减小的趋势;对拉曼光谱做最佳高斯(Gauss)分峰拟合,得出薄膜的晶化率均高于62.58%,脉冲功率为80 W时制备的薄膜具有最高的晶化率(79.29%)。上述分析表明薄膜中均有硅量子点的形成,且数量先增加后减小,脉冲功率为80 W时硅量子点数量最多。通过测量样品的透射率T、反射率R等光学参数,利用Tauc公式估算出薄膜的光学带隙,发现带隙值随溅射功率的增加先减小后增大,在脉冲功率为80 W时最小(1.72 eV)。硅量子点尺寸与光学带隙成反比,说明薄膜中的硅量子点具有良好的量子尺寸效应。通过PL光谱分析样品的发光特性,对其做最佳高斯拟合,发现样品中均有6个发光峰。结合Raman光谱的分析结果,可以得出波长位于463~624 nm的发光峰源于硅量子点的作用;而波长位于408和430 nm的发光峰则源于薄膜内部的缺陷态,峰位没有偏移,但强度有变化。根据发光峰对应的波长可计算其能带分布,从而确定缺陷态类型：408 nm的发光峰归因于≡Si°→E_v电子辐射跃迁,430 nm的发光峰则归因于≡Si°→≡Si-Si≡的缺陷态发光。还研究了硅量子点的尺寸对发光峰移动的影响。结果表明,随硅量子点尺寸变小（大）,发光峰蓝移（红移）。综上,溅射功率为80 W时制备的含硅量子点SiC_x薄膜性能最佳。研究结果为硅量子点太阳电池的后续研究奠定了基础。     

InAs 单量子点中级联辐射光子的关联测量

利用分子束外延生长InAs单量子点样品,温度为5 K时,测量了单量子点中单、双激子自发辐射的荧光(PL)光谱.研究了单、双激子发光强度随激发功率的变化及对应发光峰的偏振特性和精细结构劈裂.基于Hanbury-Brown Twiss(HBT) 实验,测量了单、双激子间发光光谱的关联函数,证实了其发光过程为级联发射过程. 关键词： InAs 单量子点 单、双激子 荧光光谱 级联辐射     

神经网络法研究多溴代二苯胺热力学性质

通过时间分辨光谱技术详细地研究了ZnCuInS/ZnSe/ZnS量子点的激子弛豫动力学. 基于速率分布模型,波长依赖的发射动力学表明本征激子、界面缺陷态中的激子、给-受体对态中的激子都会参与量子点的发光过程,整个发光过程主要依赖于给-受体对态发射. 瞬态吸收数据表明激发后本征激子和界面缺陷物种可能会同时出现,在高激发光强下,光强依赖的俄歇复合过程也存在于量子点中     

Effect of Electrical Field on Colloidal CdSe/ZnS Quantum Dots

We fabricate the hybrid films of colloidal CdSe/ZnS quantum dots (QDs) and poly(9-vinylcarbazole) (PVK) sandwiched between two electrodes. The voltage and temperature dependences of the electroluminescence (EL) are measured. The quantum-confined Stark effect of colloidal QDs is clearly observed. To explore the mechanism in the QD EL, hybrid films are fabricated with different concentrations of colloidal QDs. Electrons and holes are proposed to be separately transported in QDs and PVK, respectively.     

Structural,morphological and optical properties of PEDOT:PSS/QDs nano-composite films prepared by spin-casting

This paper describes the structural, morphological and optical properties of the nano-composite of poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and quantum dots (QDs). The ZnSe and CdSe QDs have been synthesized, with the aid of Mercaptoacetic acid (MAA), by a colloidal method with an average size of ~5 to 7 nm. QDs have been embedded in PEDOT:PSS using a simple solution processing approach and has been deposited as thin films by spin coating technique. The QDs embedded PEDOT:PSS enhances the light absorption spectra of samples, prominently in terms of absorption intensity which may consequently improve sensitivity of the optoelectronic devices.     

Improving colloidal properties of quantum dots with combined silica and polymer coatings for in vitro immuofluorenscence assay

Semiconductor quantum dots (QDs) are promising fluorescence probes for immuofluorescence assay in the biological applications. However, water solubilization and non-specific binding are two critical issues to be addressed for the practical uses. Here, we reported a new type of QDs with combined silica and polymer coating. QDs with excellent colloidal properties were prepared via carboxylation of the amino groups on the surface of silica-coated QDs by reacting with multi-carboxyl poly (acrylic acid) (PAA). Hydrodynamic size of PAA-functionalized silica-coated QDs was around 40 nm. They were highly fluorescent (about 47.8% quantum yield). No precipitate of QDs was observed after 3 month storage at 4 °C. When cancer cells (HeLa) were used, the functionalized QDs exhibited little or no non-specific cellular binding. The results from in vitro experiments indicated that PAA-functionalized silica-coated QDs-antibody bioconjugates had excellent antigen-capture ability and exhibited little or no non-specific binding to polystyrene spheres which were used to immobilize the antigen for immuoflurescence assay. The PAA-functionalized silica-coated QDs with improved colloidal properties could serve as excellent alternative fluorescent probes for biodetection.     

A confocal laser scanning microscopic study on thermoresponsive binary microgel dispersions incorporated with CdTe quantum dots

Monodisperse poly(N-isopropylacrylamide) (PNIPAM) particles loaded with cadmium telluride (CdTe) quantum dots (QDs) of two different sizes (4.7 nm and 5.6 nm) were synthesized in aqueous medium by bonding the capping agent on the quantum dots to the amide groups of PNIPAM and incubating the samples at 45°C. A huge increase in the photoluminescence (PL) intensity (green and red regions) is observed for the PNIPAM-CdTe QDs composites compared to the parent CdTe QDs. We report here for the first time the imaging of binary dispersion of green and red luminescent PNIPAM-CdTe QDs composites using a fluorescence confocal laser scanning microscope. These composites have potential applications both in material science and biology.     

基于聚合物-量子点共混的量子点发光二极管

在ITO玻璃上制备了ITO/poly(3,4-ethylene dioxythiophene)∶poly(styrene sulphonate)(PEDOT∶PASS)/poly(N,N-bis(4-butylphenyl)-N,N-bis(phenyl)benzidine(poly-TPD)/QD/1,3,5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl(TPBi)/Li F/Al结构的量子点发光二极管(QD-LED)。通过优化量子点的浓度,发现浓度为30 mg/m L时的器件性能最优,最大外量子效率(EQE)为0.83%,最大发光亮度为4 076 cd/m2。为了进一步提高QD-LED的发光效率,将QD掺入聚合物poly(N-vinylcarbazole)(PVK)和1,3-Bis(5-(4-(tert-butyl)phenyl)-1,3,4-oxadiazol-2-yl)benzene(OXD-7)中,以使得注入的电子和空穴更加平衡,同时还有助于能量传递,降低QD团聚及修饰QD薄膜表面,减少激子猝灭效应等。为此,通过旋涂和蒸镀两步法制备ITO/PEDOT∶PASS/poly-TPD/(PVK∶OXD-7)∶QD/TPBi/Li F/Al结构的器件,改变(PVK∶OXD-7)∶QD比例(1∶1,1∶3,1∶5,0∶1),发现(PVK∶OXD-7)∶QD为1∶3时的QD-LED具有最优性能,最大EQE为1.97%,相当于非掺杂器件的2.3倍,并且发光峰没有发生偏移。     

Mussel‐Inspired Polymer Grafting on CsPbBr3 Perovskite Quantum Dots Enhancing the Environmental Stability

Mussel‐inspired chemistry, motivated by the adhesive proteins secreted by mussels for attachment to wet surfaces, is an emerging technique for manipulating the surface properties of a variety of materials. Here, a facile mussel‐inspired poly(N‐vinyl pyrrolidone) (PVP) polymer encapsulation with trivial influence on inherent optical properties of perovskite quantum dots (QDs) is demonstrated to efficiently combat the low intrinsic thermal, chemical, and photostability of CsPbBr₃ QDs. The suitability of photopolymer‐processed PVP‐CsPbBr₃ QDs flexible films as color components in white light–emitting devices is substantiated.     

A comparative study on the performance of hybrid solar cells containing ZnSTe QDs in hole transporting layer and photoactive layer

In this paper, ZnSTe quantum dots-based hybrid solar cells (HSC) with two different device architectures have been investigated. The improved performance of the poly(3-hexylthiophene) (P3HT) and [6,6]phenyl C₇₁ butyric acid methyl ester (PC₇₁BM)-based bulk heterojunction (BHJ) solar cells by the incorporation of ZnSTe quantum dots (QDs) with an average size of 2.96 nm in PEDOT:PSS layer and active layer that have been demonstrated. Although the efficiency of both types of devices is almost the same, a close comparison reveals different reasons behind their improved performance. The device prepared with QDs in the HTL has shown reduced series resistance, increased shunt resistance, and improved mobility. On the other hand, QDs in the photoactive layer demonstrates increased photo-generation leading to improved efficiency.     

基于量子点和MEH-PPV的白光发光二极管的研究

利用无机纳米材料与有机聚合物材料相结合的方法制备白光发光二极管器件, 研究了蓝光量子点QDs(B)掺杂聚[2-甲氧基-5-(2-乙基己氧基-1, 4-苯撑乙烯撑](MEH-PPV) 复合体系的发光特性及量子点QDs(B) 掺杂浓度(质量分数)不同对器件发光特性的影响. 制备了ITO/PEDOT:PSS/MEH-PPV:QDs(B)/LiF/Al 结构的电致发光器件, 测试了器件的电致发光光谱和电学、光学特性. 当QDs掺杂浓度为40%, 驱动电压为8 V时器件能得到较为理想的白光发射. 同时, 对比研究了非掺杂体系的发光特性, 制备了结构为ITO/PEDOT:PSS/MEH-PPV/QDs(B)/LiF/Al的器件, 掺杂体系相较于非掺杂体系, 器件的最大亮度增大, 启亮电压降低, 并分析了掺杂体系器件性能改善的原因.     

Quantum dot bio-conjugate: as a western blot probe for highly sensitive detection of cellular proteins

In the present study, we report a quantum dot (QD)-tailored western blot analysis for a sensitive, rapid and flexible detection of the nuclear and cytoplasmic proteins. Highly luminescent CdTe and (CdTe)ZnS QDs are synthesized by aqueous method. High resolution transmission electron microscopy, Raman spectroscopy, fourier transform infrared spectroscopy, fluorescence spectroscopy and X-ray diffraction are used to characterize the properties of the quantum dots. The QDs are functionalized with antibodies of prostate apoptosis response-4 (Par-4), poly(ADP-ribose) polymerases and β actin to specifically bind with the proteins localized in the nucleus and cytoplasm of the cells, respectively. The QD-conjugated antibodies are used to overcome the limitations of conventional western blot technique. The sensitivity and rapidity of protein detection in QD-based approach is very high, with detection limits up to 10 pg of protein. In addition, these labels provide the capability of enhanced identification and localization of marker proteins in intact cells by confocal laser scanning microscopy.     

掺杂对多层Ge/Si(001)量子点光致发光的影响

利用超高真空化学气相沉积设备, 在Si (001) 衬底上外延生长了多个四层Ge/Si量子点样品. 通过原位掺杂的方法, 对不同样品中的Ge/Si量子点分别进行了未掺杂、磷掺杂和硼掺杂. 相比未掺杂的样品, 磷掺杂不影响Ge/Si量子点的表面形貌, 但可以有效增强其室温光致发光; 而硼掺杂会增强Ge/Si量子点的合并, 降低小尺寸Ge/Si量子点的密度, 但其光致发光会减弱. 磷掺杂增强Ge/Si量子点光致发光的原因是, 磷掺杂为Ge/Si量子点提供了更多参与辐射复合的电子. 关键词： Ge/Si量子点 磷掺杂 光致发光