放射性核束物理研究中的一些热点问题

文章介绍了放射性核束物理的现状和进展,给出了一些目前热点的研究问题和方向,比如垒下融合反应、费米能区和高能区直接核反应、滴线核性质、非稳定核区的新幻数和新的集体运动模式等.     

Development of a RILIS ionisation scheme for gold at ISOLDE, CERN

At the ISOLDE on-line isotope separation facility, the resonance ionisation laser ion source (RILIS) can be used to ionise reaction products as they effuse from the target. The RILIS process of laser step-wise resonance ionisation of atoms in a hot metal cavity provides a highly element selective stage in the preparation of the radioactive ion beam. As a result, the ISOLDE mass separators can provide beams of a chosen isotope with greatly reduced isobaric contamination. With the addition of a new three-step ionisation scheme for gold, the RILIS is now capable of ionising 26 of the elements. The optimal scheme was determined during an extensive study of the atomic energy levels and auto-ionising states of gold, carried out by means of in-source resonance ionisation spectroscopy. Details of the ionisation scheme and a summary of the spectroscopy study are presented.     

ATLAS用于CARIBU项目的ECR离子剥离器

A new radioactive beam facility for ATLAS,the Californium Rare Ion Breeder Upgrade (CARIBU), is under construction.The facility will use fission fragments from a 1 Ci ~(252)Cf source;thermalized and collected into a low-energy beam by a helium gas catcher.In order to reaccelerate these beams,the existing ATLAS ECR-I ion source is being redesigned to function as a charge breeder source.The design and features of this charge breeder configuration is discussed and the project status described.     

Ionization Scheme Development at the ISOLDE RILIS

The resonance ionization laser ion source (RILIS) of the ISOLDE on-line isotope separation facility is based on the method of laser step-wise resonance ionization of atoms in a hot metal cavity. The atomic selectivity of the RILIS complements the mass selection process of the ISOLDE separator magnets to provide beams of a chosen isotope with greatly reduced isobaric contamination. Using a system of dye lasers pumped by copper vapour lasers, ion beams of 24 elements have been generated at ISOLDE with ionization efficiencies in the range of 0.5–15%. As part of the ongoing RILIS development off-line resonance ionization spectroscopy studies carried out in 2003 and 2004 have determined the optimal three-step ionization schemes for scandium, antimony, dysprosium and yttrium.     

The radioactive ion beam project at VECC, Kolkata-A status report

A project to build an ISOL-post accelerator type of radioactive ion beam (RIB) facility has been undertaken at VECC, Kolkata. The funding for the first phase of the project was approved in August 1997. This phase will be the R&D phase and will be completed by December 2003. The present status of development of the various sub-systems of the RIB facility will be discussed.     

Nuclear physics with simple and multi-element detectors and with stable and radioactive beams

The phenomenon of fusion barrier distributions is discussed in the context of a problem already investigated in some detail with simple detection systems, but possessing avenues to studies with multi-detector arrays. The complementarity of research with simple and complex detectors, as well as with stable and radioactive beams, will be highlighted.     

二次电子对离子束流品质影响的动态研究

基于粒子云网格的计算方法,建立了具有外电路的加速系统模型,模拟了氘离子束轰击靶面产生二次电子的过程,动态地分析了二次电子的产生对离子加速电压的影响以及对氘离子束束流品质和氘离子束轰击靶面能量的影响。结果表明,当有0.06 A的二次电子电流产生时,离子加速电压将会下降45%,从而导致氘离子束束流品质下降,参与氘氚反应的氘离子数减少,相应的氘离子束轰击靶面的能量下降43.8%。     

强流脉冲离子束辐照对电弧离子镀TiNbN硬质薄膜摩擦磨损性能的影响

 利用分离靶电弧离子镀工艺在高速钢基体上制备TiNbN多元硬质薄膜,利用TEMP-6型强流脉冲离子束（HIPIB）设备,采用含C/H离子、加速电压300 kV、脉冲宽度70 ns、束流密度60 A/cm2的强流脉冲离子束对所制备的薄膜进行辐照处理,研究辐照前后膜层的摩擦磨损性能的变化。实验结果表明：HIPIB辐照以后,薄膜的表面熔化,摩擦系数降低,晶粒细化,膜层的硬度由HK3444提高到HK3820,膜基结合力由59 N提高到65 N。在测试载荷300 N和600 N条件下,薄膜的摩擦磨损性能均有较大改善。     

ECR ion source based low energy ion beam facility

Mass analyzed highly charged ion beams of energy ranging from a few keV to a few MeV plays an important role in various aspects of research in modern physics. In this paper a unique low energy ion beam facility (LEIBF) set up at Nuclear Science Centre (NSC) for providing low and medium energy multiply charged ion beams ranging from a few keV to a few MeV for research in materials sciences, atomic and molecular physics is described. One of the important features of this facility is the availability of relatively large currents of multiply charged positive ions from an electron cyclotron resonance (ECR) source placed entirely on a high voltage platform. All the electronic and vacuum systems related to the ECR source including 10 GHz ultra high frequency (UHF) transmitter, high voltage power supplies for extractor and Einzel lens are placed on a high voltage platform. All the equipments are controlled using a personal computer at ground potential through optical fibers for high voltage isolation. Some of the experimental facilities available are also described.     

Segmented linear radiofrequency quadrupole/laser ion source project at TRIUMF

Reactions such as ²⁵Al(p,γ)²⁶Si are the key to understand the production of ^26g Al and ^26m Al in our galaxy. Experimental results could provide important constraints on nova nucleosynthesis and modelling where ²⁶Al is believed to be produced. To achieve such measurements, high-intensity and high-purity radioactive beams are required. However, production targets at ISOL-type facilities such as ISAC at TRIUMF produce high-intensity alkali beams by surface ionization on hot transfer tubes hampering the measurement of isotopes of interest. To overcome this issue, an ion source combining a segmented linear radiofrequency quadrupole (RFQ) to a laser ion source is being built. Its main function is to suppress alkali impurities whilst allowing for fast-release of short-lived isotopes. The beam production method, the RFQ/laser ion source and the removal of alkali contaminants are discussed in this paper.     

Status report on the folded tandem ion accelerator at BARC

The folded tandem ion accelerator (FOTIA) facility set up at BARC has become operational. At present, it is used for elemental analysis studies using the Rutherford backscattering technique. The beams of¹H, ⁷Li, ¹²C, ¹⁶O and ¹⁹F have been accelerated up to terminal voltages of about 3 MV and are available for experiments. The terminal voltage is stable within ±2 kV. In this paper, present status of the FOTIA and future plans are discussed.     

Swift heavy ion beam mixing at V/Si interface

Vanadium silicides are of increasing interest because of applications in high temperature superconductivity and in microelectronics as contact materials due to their good electrical conductivity. In the present work ion beam induced mixing at Si/V/Si interface has been investigated using 120 MeV Au ions at 1 × 10¹³ to 1 × 10¹⁴ ions/cm² fluence at room temperature. V/Si interface was characterized by Grazing Incidence X-Ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), Rutherford Backscattering Spectrometry (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM) techniques before and after irradiation. It was found that the atomic mixing width increases with ion fluence. GIXRD and RBS investigations confirm the formation of V₆Si₅ silicide phase at the interface at the highest ion irradiation dose.     

电子束、离子辅助和离子束溅射三种工艺对光学薄膜性能的影响

运用电子束、离子辅助和离子束溅射三种镀膜工艺分别制备光学薄膜,包括单层氧化物薄膜和增透膜,然后采取一系列测试手段,如Zygo轮廓仪、原子力显微镜、表面热透镜技术和X射线衍射等技术,来分析和研究不同的工艺对这些薄膜性能的不同影响,以判断合理的沉积工艺。     

Simulation of ion beam extraction and focusing system

The characteristics of ion beam extraction and focused to a volume as small as possible were investigated with the aid of computer code SIMION 3D version 7.This has been used to evaluate the extraction characteristics(accel-decel system)to generate an ion beam with low beam emittance and high brightness.The simulation process can provide a good study for optimizing the extraction and focusing system of the ion beam without any losses and transported to the required target.Also,a study of a simulation model for the extraction system of the ion source was used to describe the possible plasma boundary curvatures during the ion extraction that may be affected by the change in an extraction potential with a constant plasma density meniscus.     

Simulation of ion beam extraction and focusing system

The characteristics of ion beam extraction and focused to a volume as small as possible were investigated with the aid of computer code SIMION 3D version 7. This has been used to evaluate the extraction characteristics (accel-decel system) to generate an ion beam with low beam emittance and high brightness. The simulation process can provide a good study for optimizing the extraction and focusing system of the ion beam without any losses and transported to the required target. Also, a study of a simulation model for the extraction system of the ion source was used to describe the possible plasma boundary curvatures during the ion extraction that may be affected by the change in an extraction potential with a constant plasma density meniscus.     

Development of exploding wire ion source for intense pulsed heavy ion beam accelerator

A Novel exploding wire type ion source device is proposed as a metallic ion source of intense pulsed heavy ion beam (PHIB) accelerator. In the device, multiple shot operations are realized without breaking the vacuum. The basic characteristics of the device are evaluated experimentally with an aluminum wire of diameter 0.2 mm and length 25 mm. A capacitor bank of capacitance 3 μF and a charging voltage of 30 kV was used, and the wire was successfully exploded by a discharge current of 15 kA with a rise time of 5.3 μs. Plasma flux of ion current density around 70 A/cm² was obtained at 150 mm downstream from the device. The drift velocity of ions evaluated by a time-of-flight method was 2.7×10⁴ m/ s, which corresponds to the kinetic energy of 100 eV for aluminum ions. From the measurement of the ion current density distribution, the ion flow is found to be concentrated toward the direction where the ion acceleration gap is placed. From the experiment, the device is found to be acceptable for applying the PHIB accelerator.     

Controlling the nanodot formation on GaAs surface during focused ion beam processing

GaAs processed using gallium-focused ion beams for the fabrication of photonic devices mostly results in gallium nanodots on the surface. These gallium nanodots may produce unwanted effects and deteriorate the optical and electrical properties of the devices. We have investigated the FIB processing of GaAs with and without exposure to an insulator-enhanced etching precursor gas (XeF₂) to explore the use of XeF₂ during GaAs processing. It is reported that without the gas, FIB processing results in nanodots on the surface that vary in size and density depending on processing parameters such as incident energy, beam current, angle and dwell time. Processing with insulator (XeF₂)-enhanced etching gas irrespective of the process parameters eliminates the nanodots and results in a smooth surface, as characterized by scanning electron microscopy and atomic force microscopy. This method will be useful for surfaces which require dry processing without exposure to any wet chemical etching.     

Laser-induced ion acceleration at ultra-high laser intensities

Ion acceleration by ultrashort laser pulses of very high intensities of the order 10²²?W/cm² is studied by two-dimensional Particle-In-Cell simulations. We show that laser normal incidence is preferred for such high intensities. For linearly polarized laser radiation, higher maximum proton/ion energies are achieved than for circular polarization. For linear polarization, the transition from the target normal sheath acceleration to the acceleration on the target front side by the radiation pressure is analyzed in detail. The transition intensity is increasing with the target thickness. The radiation pressure dominated regime leads to considerably higher number of accelerated protons and thus to a higher acceleration efficiency.     

Deposition of silicon oxynitride films by ion beam sputtering at room temperature

Silicon oxynitride films, possessing various compounds of SiO₂ and Si₃N₄, were deposited by ion beam sputtering at room temperature. This technique can easily and precisely control the refractive index and composition of the silicon oxynitride film. Properties of these films, such as the refractive index, the extinction coefficient, the surface roughness, and so on were measured in this study.     

26 Al beam production by a solid state laser ion source at TRIUMF

Many experiments carried out at radioactive beam facilities require the production of intense, isotopically clean and isobar free beams of a particular isotope. At TRIUMF the addition of a resonant ionization laser ion source (TRILIS) enables a multitude of new beams and therefore new experiments to be carried out. ²⁶Al was one of the first radioactive ion beams delivered to an experiment using TRILIS. This paper outlines the development of the ²⁶Al ion beam for nuclear astrophysics.