Yb掺杂C60薄膜的x射线光电子能谱研究

在超高真空系统中制备了C₆₀的Yb填隙化合物薄膜.用x射线光电子能谱研究了Yb和C₆₀结合过程中C 1s，Yb 4f和Yb 4d的变化.利用Yb 4f和C 1s的谱峰强度确定出相纯样品的化学组分接近Yb_2.75C₆₀，这一结果与晶体x射线衍射结果一致.Yb 4f和Yb 4d的峰形与峰位表明化合物中Yb的价态为Yb²⁺.相纯样品（Yb_2.75C₆₀）的C 关键词： 60的Yb填隙化合物薄膜')" href="#">C₆₀的Yb填隙化合物薄膜 x射线光电子能谱 Yb价态     

Yb2.75C60同步辐射光电子能谱

在超高真空系统中制备了Yb2.75C60薄膜.对样品进行了同步辐射光电子能谱研究.在费米能级以下约5 eV范围内的谱数据由Yb2.75C60价带(C60分子轨道LUMO,HOMO和HOMO-1导出的能带)和芯态(Yb 4f7/2,4f5/2)能级构成.用紫外能区不同能量的入射光子,用C 2p和Yb 4f光电离截面随光子能量的不同变化规律,通过定量拟合,得到了对谱线有贡献的上述各个组分的峰位、峰宽和强度.结果表明,光子能量高于约30.0 eV时,芯态4f的贡献使得实验结果远远偏离价带的本征态密度分布.因此,研究Yb2.75C60价态时,应使用能量低于30.0 eV的光子.对实验和拟合结果分析,发现了类似纯C60的光电离截面振荡现象.振荡幅度相对于纯C60较小,反映了化合物中C60分子的化学环境对光电离截面振荡现象起着不可忽略的作用.     

Yb2.75C60价带光电子能谱

用角积分紫外光电子能谱技术测量了Yb2 75C6 0 薄膜的价带电子态密度分布 .相纯Yb2 75C6 0 样品通过C1s芯态x射线电子谱峰的位移表征 .结果表明Yb2 75C6 0 是半导体 ,在费米能级处几乎没有电子态分布 .Yb 6s电子态和C6 0 LU MO能带的杂化效应不可忽略 ,有部分Yb 6s电子分布在Yb C6 0 杂化能带上 .     

Sm富勒烯的芯态光电子能谱

用X射线光电子能谱研究了Sm掺杂的固态C₆₀相衍变和芯电子态.在Sm_xC₆₀中Sm的含量x小于0.5时，样品是固溶相；在x=0.5和x=2.75之间的掺杂阶段，样品是这两个相的混合.在x=2.75和x=6之间的高掺杂阶段未观察到相分离的X射线光电子能谱证据.Sm 4f, 4d的实验数据表明Sm的价态是+2.二价Sm 3d_5/2芯态谱线存在两个子峰. 关键词： 60的Sm填隙化合物')" href="#">C₆₀的Sm填隙化合物 相结构 电子态 X射线光电子能谱     

Sm富勒烯的价带光电子能谱

用紫外光电子能谱和同步辐射光电子能谱研究了Sm掺杂C₆₀薄膜的价带电子结构.Sm的价电子大部分转移给C₆₀，化学键以离子性为主.对于任何化学配比都没有观察到费米边，所以Sm富勒烯超导相在室温下为半导体性质.获得了很接近单相Sm_2.75C₆₀的样品在费米能级附近的电子态密度分布.固溶相的光电子发射与Sm_2.75C₆₀有明显区别.Sm_xC_{60关键词： 60}的Sm填隙化合物')" href="#">C₆₀的Sm填隙化合物 价带光电子能谱 电子结构     

磁性隧道结热稳定性的x射线光电子能谱研究

通过XPS等微观分析手段证实了磁性隧道结在高温退火后，反铁磁层中的Mn元素扩散到被钉 扎铁磁层及势垒层中，破坏了势垒层/铁磁层界面，从而导致了磁性隧道结高温退火后TMR的 下降.然而在反铁磁层和被钉扎铁磁层之间插入一层纳米氧化层后，Mn的扩散得到了抑制， 使磁性隧道结的热稳定性得以提高. 关键词： 磁性隧道结 纳米氧化层 x射线光电子能谱     

沉积态铀薄膜表面氧化的X射线光电子能谱

含铀(U)薄膜在激光惯性约束聚变的实验研究中有重要的用途.研究其在不同气氛下的氧化性能可以为微靶制备、储存及物理实验提供关键的实验数据.通过超高真空磁控溅射技术制备了纯U薄膜及金-铀(Au-U)复合平面膜,将其在大气、高纯氩(Ar)气及超高真空度环境中暴露一段时间后,利用X射线光电子能谱仪结合Ar~+束深度剖析技术考察U层中氧(O)元素分布及价态,分析氧化产物及机理.结果显示,初始状态的U薄膜中未检测到O的存在.Au-U复合薄膜中的微观缺陷减弱了Au防护层的屏蔽效果,使其在3周左右时间内严重氧化,产物为U表面致密的氧化膜及缺陷周围的点状腐蚀物,主要成分均为二氧化铀(UO_2).在高纯Ar气中纯U薄膜仅暴露6 h后表面即被严重氧化,生成厚度不均匀的UO_2.在超高真空度环境下保存12 h后,纯U薄膜表面也发生明显氧化,生成厚度不足1 nm的UO_2.Ar~+束对铀氧化物的刻蚀会因择优溅射效应而使UO_2被还原成非化学计量的UO_(2-x),但这种效应受O含量的影响.     

蓝色氧化钨的光电子能谱研究

本文用光电子能潜技术对蓝色氧化钨的表面价态进行了一系列研究。结果表明:蓝色氧化钨并不是单一价态的氧化钨,而是由W⁺⁵和W⁺⁶两种价态组成。氩离子刻蚀,真空高温处理都是一个失氧还原过程,也是钨由高价态向低价态的转变过程。同时,费密能级附近的态密度随着价态变低而逐渐增加。 关键词：     

分子束外延GaN薄膜的X射线光电子能谱和俄歇电子能谱研究

用XPS和AES电子能谱的方法对等离子体辅助分子束外延(MBE)生长的GaN薄膜进行了表面分析和深度剖析.发现红外分子束外延(RFMBE)生长的富镓GaN薄膜实际表面存在O和C吸附层,C主要为物理吸附,而O在GaN表面形成局域化学键产生氧络合物覆盖层,并形成一定的深度分布.杂质O在GaN带隙中导带底形成杂质带同时引入深受主能级,使得带隙变窄室温光吸收谱向低能方向移动,光致发光谱出现宽带发光峰.从而影响GaN薄膜的电学和光学性质 关键词： GaN薄膜 X射线光电子能谱 俄歇电子能谱 表面分析     

X射线光电子能谱

X射线光电子能谱（X-ray photoelectron spectroscopy，XPS）技术也被称作用于化学分析的电子能谱（electron spectroscopy for chemical analysis，ESCA）．XPS属表面分析法，它可以给出固体样品表面所含的元素种类、化学组成以及有关的电子结构重要信息，在各种固体材料的基础研究和实际应用中起着重要的作用．文章简要介绍了XPS仪器的工作原理和分析方法，并给出了XPS在科学研究工作中的应用实例．     

Properties of transistor based C60 thin film on polystyrene

This paper reports that the n-type organic thin-fihn transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C60 film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm2/（V. s） could reach when Barium was introduced as electrodes. Moreover, the C60 transistor shows a negligible ＇hysteresis effect＇ contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.     

X-ray photoemission studies on InSb clusters

The changes in core-level electronic structure of In_1−xSb_x nano-clusters have been studied using X-ray photoelectron spectroscopy. Though, clusters with mean composition InSb show shallow and deep core-level binding energies similar to those of bulk InSb, the Sb and In rich versions show a negative BE shift for the excess element and a positive shift for the minority element. The observed BE shifts have been explained considering a core and surface shell model for the structure of the clusters and possible surface atom core-level shifts.     

X-ray photoemission and X-ray absorption studies of Hf-silicate dielectric layers

Photoelectron spectroscopy and X-ray absorption spectroscopy (XAS) measurements have been performed on HfSi_xO_y and HfSi_xO_yN_z dielectric layers, which are potential candidates as high-k transistor gate dielectrics. The hafnium silicate layers, 3-4 nm thick, were formed by codepositing HfO₂ and SiO₂ (50%:50%) by MOCVD at 485 °C on a silicon substrate following an IMEC clean. Annealing the HfSi_xO_y layer in a nitrogen atmosphere at 1000 °C resulted in an increase in the Si⁴⁺ chemical shift from 3.5 to 3.9 eV with respect to the Si⁰ peak. Annealing the hafnium silicate layer in a NH₃ atmosphere at 800 °C resulted in the incorporation of 10% nitrogen and the decrease in the chemical shift between the Si⁴⁺ and the Si⁰ to 3.3 eV. The results suggest that the inclusion of nitrogen in the silicate layer restricts the tendency of the HfO₂ and the SiO₂ to segregate into separate phases during the annealing step. Synchrotron radiation valence band photoemission studies determined that the valence band offsets were of the order of 3 eV. X-ray absorption measurements show that the band gap of these layers is 4.6 eV and that the magnitude of the conduction band offset is as little as 0.5 eV.     

Valence band X-ray photoemission and soft X-ray emission studies of Pt

The soft X-ray N_6,7 (5d to 4f transition) emission spectrum and the X-ray photoemission spectrum of Pt (the latter under two conditions of surface cleanliness) have been obtained, and are compared with the results of photoemission and band theoretical studies.     

C 1s core photoemission of C60 and C48N12

We make a theoretical study of the shake-up of the 1s photoemission of C₆₀. The method takes into account the N-body reactions of the π and σ electrons which appear during the formation of the photoemission hole on one carbon atom. We analyze the origin of the satellite in the spectra due to transitions between N-body states. Our calculation shows that the satellite spectra is essentially given by N-body transitions which involve the creation of one or two electron-hole pairs. The method has been applied also to C₄₈N₁₂. The situation is more complex. The spectra of the two most stable species have been investigated. Moreover the influence on the spectra of the position of the hole created on the carbon atom in C₄₈N₁₂ has been examined (all the carbon positions are not equivalent for some isomers).     

boldmath In situ high temperature X-ray diffraction studies of ZnO thin film

An epitaxial ZnO thin film was entirely fabricated by pulsed laser deposition. Both the orientation and the size of the crystallites were studied. The X-ray diffraction (XRD) patterns of the film show strong c-axis oriented crystal structure with preferred (002) orientation. The Phi-scan XRD pattern confirms that the epitaxial ZnO exhibits a single-domain wurtzite structure with hexagonal symmetry. In situ high-temperature XRD studies of ZnO thin film show that the crystallite size increases with increasing temperature, and (002) peaks shift systematically toward lower 2θ values due to the change of lattice parameters. The lattice parameters show linear increase in their values with increasing temperature.