The morphological,optical and electrical properties of SnO2:F thin films prepared by spray pyrolysis

Combining the spray pyrolysis and the sol–gel techniques gives the possibility to produce Fluorine doped Tin oxide (SnO₂:F) thin films. Transparent conducting SnO₂:F thin films have been deposited on glass substrates by the spray pyrolysis technique. This technique for the fabrication of SnO₂:F filmsby combining sol–gel process and the spray pyrolysis technique ispresented in this paper. The Sol–gel precursors have been successfully prepared using SnCl₂·5H₂O and (Ac)F₃. The structural, electrical, and optical properties of these films were investigated. The high resolution transmission electron microscopy (HRTEM) and selected area diffraction (SAD) patterns of SnO₂:F films show that the gel films lead to a tetragonal structure. The X‐ray diffraction pattern of the films deposited at substrate temperature 530° , the orientation of the films was predominantly [110]. In addition, the surface chemical components were also examined by X‐ray photoelectron spectroscopy (XPS) showing the SnO₂:F deposited with the atomic concentration ratios Sn/F 1.82:1. The minimum sheet resistance was 50 Ω and average transmission in the visible wavelength range of 300 to 800 nm was 87.25%. Copyright © 2008 John Wiley & Sons, Ltd.     

Thermal behaviour of precursors for CuInS2 thin films deposited by spray pyrolysis

The thermal decomposition of precursors for copper indium disulphide (CuInS₂) thin films obtained by drying aqueous solutions of copper chloride (CuCl₂), indium chloride (InCl₃) and thiourea (SC(NH₂)₂) at the Cu:In:S molar ratios of 1:1:3 (1) and 1:1:6 (2) was monitored by simultaneous thermogravimetry /differential thermal analysis/ evolved gas analysis-mass spectrometry (TG/DTA/EGA-MS) measurements in a dynamic 80 %Ar + 20 %O₂ atmosphere. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy were used to characterise the dried precursors and products of the thermal decomposition. The precursors 1 and 2 are mixtures of copper and indium chloride thiourea complex compounds, whilst 1 can also contain unreacted InCl₃. The thermal degradation of 1 and 2 in the temperature range of 30–800 °C consists of six steps with a total mass loss of 71.5 and 89.8 %, respectively. According to XRD, CuInS₂ is formed below 300 °C. Decomposition of 1 and 2 is completed at 620 and 600 °C, respectively. The final decomposition product of 1 at 800 °C consists of a mixture of In₂O₃ and CuO phases, whilst 2 consists of In₂O₃, CuO and Cu₂In₂O₅ phases. EGA by MS revealed the release of CS₂, NH₃, H₂NCN and HNCS, which upon their oxidation also yield COS, SO₂, HCN and CO₂.     

Studies on nanocrystalline cadmium sulphide (CdS) thin films deposited by spray pyrolysis

Cadmium chalcogenides with appropriate band gap energy have been attracting a great deal of attention because of their potential applications in optoelectronic devices. CdS in the form of thin film is prepared at different substrate temperatures by a simple and inexpensive chemical spray pyrolysis technique. The as-deposited thin films have been characterized by XRD, SEM, EDAX and electrical resistivity measurement techniques. The XRD patterns show that the films are polycrystalline with hexagonal crystal structure irrespective of substrate temperature. SEM studies reveal that the grains are uniform with uneven spherically shaped, distributed over the entire surface of the substrates. Compositional analysis reveals that the material formed is stoichiometric at the optimized substrate temperature. The optical band gap energy is found to be 2.44 eV with direct allowed band-to-band transition for film deposited at 300°C. The electrical resistivity measurement shows that the films are semiconducting with a minimum resistivity for film deposited at 300°C. The thermoelectric power measurement shows that films exhibit n-type of conductivity.     

RuO2/Co3O4 thin films prepared by spray pyrolysis technique for supercapacitors

RuO₂/Co₃O₄ thin films with different RuO₂ content were successfully prepared on fluorine-doped tin oxide coated glass plate substrates by spray pyrolysis method, and their capacitive behavior was investigated. Electrochemical property was performed by cyclic voltammetry, constant current charge/discharge, and electrochemical impedance spectra. The capacitive performance of RuO₂/Co₃O₄ thin films with different RuO₂ content corresponded to a contribution from a main pseudocapacitance and an additional electric double-layer capacitance. The specific capacitance of pure Co₃O₄, 15.5%, 35.6%, and 62.3% RuO₂ composites at the current density of 0.2 A g⁻¹ were 394 ± 8, 453 ± 9, 520 ± 10, and 690 ± 14 F g⁻¹, respectively; 62.3% RuO₂ composite presented the highest specific capacitance value at various current densities, whereas 35.6% RuO₂ composite exhibited not only the largest specific capacitance contribution from RuO₂ (C _sp ^RuO2) at the current density of 0.5, 1.0, 1.5, and 2.0 A g⁻¹ but also the highest specific capacitance retention ratio (46.3 ± 2.8%) at the current density ranging from 0.2 to 2.0 A g⁻¹. Electrochemical impedance spectra showed that the contact resistance dropped gradually with the decrease of RuO₂ content, and the charge-transfer resistance (R _ct) increased gradually with the decrease of RuO₂ content.     

Effect of Al doping on the conductivity type inversion and electro-optical properties of SnO2 thin films synthesized by sol-gel technique

Al doped SnO₂ thin films have been synthesized by a sol-gel dip coating technique with different percentages of Al on glass and silicon substrates. X-ray diffraction studies confirmed the proper phase formation in the films and atomic percentage of aluminium doping in the films was obtained by energy dispersive X-ray studies. SEM studies showed the particle sizes lying in the range 100–150 nm for the undoped films and it decreased with increase of Al doping. Optical transmittance spectra of the films showed high transparency (∼80%) in the visible region and the transparency increases with the increase of Al doping in the films. The direct allowed bandgap of the films have been measured for different Al concentration and they lie within the range of 3.87–4.21 eV. FTIR studies depicted the presence of Sn–O, Al–O, bonding within the films. The room temperature electrical conductivities of the films are obtained in the range of 0.21 S cm⁻¹ to 1.36 S cm⁻¹ for variation of Al doping in the films 2.31–18.56%. Room temperature Seebeck coefficients, S_RT of the films were found in the range +56.0 μVK⁻¹ to −23.3 μVK⁻¹ for variation of Al doping in the films 18.56–8.16%. It is observed that the Seebeck coefficient changes its sign at 12.05% of Al in the films indicating that below 12.05% of Al doping, SnO₂:Al behaves as an n-type material and above this percentage it is a p-type material.     

Characteristics of SnO2 thin films prepared by SILAR

SnO₂ thin films were deposited on glass substrates by using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The film thickness effect on characteristic parameters such as structural, morphological, optical and electrical properties of the films was studied. Also, the films were annealed in oxygen atmosphere (400 °C, 30 min) and characteristic parameters of the films were investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies showed that all the films exhibited polycrystalline nature with tetragonal structure and were covered well on glass substrates. After the investigation of the crystalline and surface properties of the films, it was found that they were improving with increasing film thickness. Optical band gap decreased from 3.90 eV to 3.54 eV and electrical conductivity changed between 0.015–0.815 (Ω-cm)⁻¹ as the film thickness increased from 215 to 490 nm. The refractive index (n), optical static and high frequency dielectric constants (ɛ_o, ɛ_∞) values were calculated by using the optical band gap values as a function of the film thickness.     

Long-term cycling and stability of crystalline WO3 electrochromic thin films prepared by spray pyrolysis

Journal of Solid State Electrochemistry - WO3 thin films with improved electrochromic durability were deposited by pneumatic spray pyrolysis technique on top of FTO substrates; tungsten...     

Prediction and realisation of high mobility and degenerate p-type conductivity in CaCuP thin films

Phosphides are interesting candidates for hole transport materials and p-type transparent conducting applications, capable of achieving greater valence band dispersion than their oxide counterparts due to the higher lying energy and increased size of the P 3p orbital. After computational identification of the indirect-gap semiconductor CaCuP as a promising candidate, we now report reactive sputter deposition of phase-pure p-type CaCuP thin films. Their intrinsic hole concentration and hole mobility exceed 1 × 10²⁰ cm⁻³ and 35 cm² V⁻¹ s⁻¹ at room temperature, respectively. Transport calculations indicate potential for even higher mobilities. Copper vacancies are identified as the main source of conductivity, displaying markedly different behaviour compared to typical p-type transparent conductors, leading to improved electronic properties. The optical transparency of CaCuP films is lower than expected from first principles calculations of phonon-mediated indirect transitions. This discrepancy could be partly attributed to crystalline imperfections within the films, increasing the strength of indirect transitions. We determine the transparent conductor figure of merit of CaCuP films as a function of composition, revealing links between stoichiometry, crystalline quality, and opto-electronic properties. These findings provide a promising initial assessment of the viability of CaCuP as a p-type transparent contact.

We synthesize air-stable, p-type CaCuP thin films with high hole concentration and high hole mobility as potential p-type transparent conductors. We study their optoelectronic properties in detail by advanced experimental and computational methods.     

The effect of cobalt (Co) concentration on structural,optical, and electrochemical properties of tungsten oxide (WO3) thin films deposited by spray pyrolysis

Journal of Solid State Electrochemistry - In this study, WO3:Co thin films with different percentages of cobalt concentration were deposited by spray pyrolysis on glass substrates at T = 400...     

Photoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films

The paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of substrate temperature and annealing conditions. Considerable increase in photocurrent and much faster photo-response was observed in films deposited at high substrate temperatures. Annealing at moderate temperatures also improved the photoconductivity and response time of the films.     

Thin films of ZnO:M synthesized by ultrasonic spray pyrolysis

High optical quality ZnO:M@Si nanocomposites (where M is the doping element) were obtained by ultrasonic spray pyrolysis. The variation of experimental conditions, the use of various precursors and dopants demonstrated that the morphology of zinc oxide nanoparticles is mainly determined by the sort of the doping element. The luminescence spectra confirm indirectly the isomorphous incorporation of the dopant ions into the zinc oxide lattice.     

SnO2 thin films prepared by dip-coating from microwave synthesized colloidal suspensions

Tin(IV) oxide thin films have been prepared by dip-coating. The suspensions used for these depositions have been synthesized by microwave-induced thermohydrolysis of tin tetrachloride aqueous solutions in the presence of hydrochloric acid. Single or multiple depositions were tested, on glass substrates as well as on pure SiO2. The obtained thin films were characterized by optical microscopy, interferometric roughness measurements (Micromap), scanning electron microscopy, secondary ion mass spectroscopy, and scanning tunneling microscopy.     

Thermoanalytical study of precursors for In<Subscript>2</Subscript>S<Subscript>3</Subscript> thin films deposited by spray pyrolysis

Thermal decomposition of precursors for In₂S₃ thin films obtained by drying aqueous solutions of InCl₃ and SC(NH₂)₂ at the In:S molar ratios of 1:3 (1) and 1:6 (2) was monitored by simultaneous TG/DTA/EGA-FTIR measurements in the dynamic 80%Ar + 20%O₂ atmosphere. XRD and FTIR were used to identify the dried precursors and products of the thermal decomposition. The precursors 1 and 2 are complex compounds, while in 2 free SC(NH₂)₂ is also present. The thermal degradation of 1 and 2 in the temperature range of 30–900 °C consists of four mass loss steps, the total mass loss being 89.1 and 78.5%, respectively. According to XRD, In₂S₃ is formed below 300 °C, crystalline In_2.24(NCN)₃ is detected only in 1 above 520 °C and In₂O₃ is the final decomposition product at 900 °C. The gaseous species evolved include CS₂, NH₃, H₂NCN, HNCS, which upon oxidation yield also COS, SO₂, HCN and CO₂.     

Structural,optical and secondary electron emission properties of diamond like carbon thin films deposited by pulsed-DC plasma CVD technique

Plasma enhanced chemical vapor deposition (PECVD) technique using pulsed-DC power supply was used to fabricate diamond like carbon (DLC) films at deposition rates as high as 110 nm/min. The DLC films deposited by pulsed-DC and DC based power supplies under different gas flow ratios were studied for their suitability as dielectric layer coatings in plasma display panels (PDPs). The effect of deposition parameters on the properties of the DLC films were studied using Fourier transform infra-red spectroscopy (FTIR) and spectroscopic ellipsometry (SE). FTIR reveals that higher hydrogen dilution in gas mixture leads to higher sp³ content. SE studies in wide spectral range were analyzed using Tauc-Lorentz model dielectric function. A rise in the extracted refractive index was seen on increasing the H₂ content in the feed gas, thus resulting in optically denser films. Secondary electron emission coefficient (γ) was measured in the films deposited by the DC and pulsed-DC based PECVD. Firing voltage in the DLC samples was found to have very low variation in the operating pressure range used in commercial PDPs, suggesting possibility of enhanced long term reliability of DLC coatings in future PDP applications.     

XPS depth profile study of porous zirconia films deposited on stainless steel by spray pyrolysis: the problem of substrate corrosion

Zirconia (ZrO₂) films of tissue‐like structure and narrow pore size distribution have been deposited by spray pyrolysis using aqueous zirconyl chloride octahydrate (ZrOCl₂·8H₂O) precursor solutions. Stainless‐steel sheets, protected or unprotected by a ZnO barrier layer, have been used as the substrate material held at 473 K. The ZnO barrier layers have been deposited on the stainless steel held at 523 K by spray pyrolysis using a zinc acetate precursor. Their property of corrosion protection to stainless steel has been proved by electrochemical polarization measurements in 0.5 M NaCl solution. A complementary study of XPS (depth profiling, mapping) and x‐ray diffraction has shown that the unprotected steel substrates were corroded during ZrO₂ film post‐annealing in air at T ≥ 773 K, whereas steel substrates protected with a compact barrier layer of crystalline ZnO before ZrO₂ film deposition did not show surface corrosion even after annealing up to 997 K. Copyright © 2004 John Wiley & Sons, Ltd.     

Study of zinc thiocarbamide chloride,a single-source precursor for zinc sulfide thin films by spray pyrolysis

Thermal decomposition of the title compound, Zn(tu)₂Cl₂ (tu=thiourea), was studied up to 1200°C in dynamic inert (N₂) and oxidative (air) atmospheres using simultaneous TG/DTA techniques. In addition, XRD and IR were employed ex situ to resolve the reaction mechanism and products. Cubic ZnS (sphalerite) is formed below 300°C in both atmospheres and is observed until 760°C, whereafter it transforms in nitrogen to the hexagonal ZnS (wurtzite). EGA by FTIR revealed the complexity of the decomposition reactions involving also the evolution of H₂NCN, which reacts to form hexagonal ZnCN₂ as revealed by an XRD analysis. This revised version was published online in July 2006 with corrections to the Cover Date.     

Study of the properties of in situ Pt-doped SnO2 thin films prepared by metal-organic chemical vapour deposition

Pt-SnO₂ thin films were directly deposited by MOCVD in the temperature range 320–440°C using the reactive gas mixture SnEt4/O₂/Pt(hfa)₂ (hfa being bis(1,1,1,5,5,5-hexafluoroacetylacetonato). The Pt content of the films increases by increasing either the Pt(hfa)₂ mole fraction or the growth temperature. Platinum is uniformly incorporated through the thickness of the films although a small excess was found on the surface. In as-deposited films, Pt is in the metallic form on the surface whereas it is mainly in the form of PtO in the bulk of the layers. Pt doping decreases the resistivity by more than an order of magnitude and improves the thermal stability of the films. The detection sensitivity to ethanol in dry air of in situ Pt-doped SnO₂ is significantly enhanced compared to undoped layers. Another beneficial effect of Pt doping is the lowering of the optimum detection temperature of ethanol.     

Rare earth Eu<Superscript>3+</Superscript> co-doped AZO thin films prepared by nebulizer spray pyrolysis technique for optoelectronics

Rare earth element (i.e.) europium co-doped aluminum zinc oxide (Eu:AZO) thin films were deposited on microscope glass slides by nebulizer spray pyrolysis with different Eu-doping concentrations (0, 0.5, 1, and 1.5%). The deposited films were investigated using X-ray diffraction, AFM, EDAX, FT-Raman, UV–visible, PL, and Hall effect measurements. X-ray confirmed the incorporation of aluminum and europium ions into the ZnO structure. All films have polycrystalline nature with hexagonal wurtzite structure at (002) direction. Topological depictions exhibited minimum surface roughness and low film thickness for pristine AZO thin film. EDAX study authorizes the existence of Zn, O, Al, and Eu in Eu: AZO thin films. Raman spectra exhibited the characteristic of ZnO-wurtzite structure (E₂-high) mode at 447?cm^?1. The deposited film showed high optical transmittance of ~90% in visible region, and the direct energy gap was around 3.30?eV for pristine AZO thin film. The PL spectra emitted a powerful UV emission situated at 388?nm, and it indicates that the film has good optical quality. The obtained large carrier concentration and less resistivity values are 4.42?×?10²¹?cm^?3 and 3.95?×?10^?4?Ω?cm, respectively, for 1.5% Eu-doped AZO thin film. The calculated figure of merit value is 17.29?×?10^?3 (Ω/sq)^?1, which is more suitable for the optoelectronic device.

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Lithium inserted ZnSnN2 thin films for solar absorber: n to p-type conversion

ZnSnN₂ is a non-toxic and earth-abundant photoabsorber material for flexible photovoltaic devices because of its excellent optoelectronic behavior. However, theoretical studies show that the alkaline-earth metallic (Li, Na, K, Rb, Cs, and Fr) dopants in ZnSnN₂, particularly lithium (Li), display shallow-acceptor behavior and improve the performance of ZnSnN₂ semiconductors. Orthorhombic phase structure with (002) preferred orientation was observed for Li-doped films and the lattice parameters agree well with reported standards. Secondary ion mass spectroscopy (SIMS) analysis revealed the incorporation of Li in Li:ZnSnN₂ films. XPS, the density of states, and Born effective charge analysis revealed the chemical bonding states of Li–ZnSnN₂. In contrast to the pristine n-type ZnSnN₂, Li:ZnSnN₂ thin films showed conductivity with p-type hole concentrations varying between 1.14 × 10²⁰–9.47 × 10¹⁹ cm^?3 and the highest mobility of 20.03 cm²V^?1s^?1. Therefore, we obtained p-type conductivity by substituting an organolithium reagent (C?H?Li) on the Zn site, which highlights that Li:ZnSnN₂ can be effectively used as the photoanode layer for next-generation thin-film solar cell devices.