Fe-doped SnO2 transparent semi-conducting thin films deposited by spray pyrolysis technique: Thermoelectric and p-type conductivity properties

In this paper, we report structural, electrical, optical, and especially thermoelectrical characterization of iron (Fe) doped tin oxide films, which have been deposited by spray pyrolysis technique. The doping level has changed from 0 to 10 wt% in solution ([Fe]/[Sn] = 0–40 at% in solution). The thermoelectric response versus temperature difference has exhibited a nonlinear behavior, and the Seebeck coefficient has been calculated from its slope in temperature range of 300–500 K. The Hall effect and thermoelectric measurements have shown p-type conductivity in SnO₂:Fe films with [Fe]/[Sn] ≥ 7.8 at%. In doping levels lower than 7.8 at%, SnO₂:Fe films have been n-type with a negative thermoelectric coefficient. The Seebeck coefficient for SnO₂:Fe films with 7.8 at% doping level has been obtained to be as high as +1850 μV/K. The analysis of as-deposited samples with thicknesses ～350 nm by X-ray diffraction (XRD) and scanning electron microscopy (SEM) has shown polycrystalline structure with clear characteristic peak of SnO₂ cassiterite phase in all films. The optical transparency (T%) of SnO₂:Fe films in visible spectra decreases from 90% to 75% and electrical resistivity (ρ) increases from 1.2 × 10^?2 to 3 × 10³ Ω cm for Fe-doping in the range 0–40 at%.     

Annealing effects on the morphology and luminescence of cubic boron nitride based ceramics

Cubic boron nitride based ceramics with silicon were sintered at 1350 °C under a pressure of 5.0 GPa. The effects of post-annealing on grain morphology, surface morphology, and photoluminescence of Si–cBN ceramics were investigated by scanning electron microscope and room temperature photoluminescence measurements. The results showed that the annealing treatment had great influence on cBN grain morphology, rather than the surface morphology. The luminescence intensity increased with annealing temperature and annealing time. The void-net structure formed by continuous distribution of SiO_x particulate on the ceramic surface resulted in the emission band peaking at about 701.2 nm, and the tense passivation of Si by SiO_x led to the peak's low intensity. The near ultraviolet emission band peaking at about 317 nm was attributed to the oxygen vacancies formed in cBN grain surface, caused by the scavenging of oxygen from the cBN grain surface by the added Si.     

Synthesis of L10 Fe–Pd films by electrodeposition and thermal annealing

Fe–Pd alloy films have been prepared by electrochemical deposition from an alkaline electrolyte containing Fe sulfate, Pd chloride and 5-sulfosalicylic acid onto polycrystalline titanium substrates. The as-deposited films were nanocrystalline and magnetically soft (coercivity ∼ 25 Oe). L1₀ Fe–Pd films with a (1 1 1) preferred orientation were obtained by post-deposition thermal annealing of films with composition about 37 at% Fe in an (Ar + 5% H₂) gas flow at 500 °C. Such films exhibit hard magnetic properties, with a coercivity up to 1880 Oe, and a slightly anisotropic magnetic response, with a larger in-plane remanence. Preliminary magnetic investigations support magnetization switching through pinning of domain walls.     

Kinetics,isotherm and thermodynamics for Cr(III) and Cr(VI) adsorption from aqueous solutions by crystalline hydrous titanium oxide

The synthetic crystalline hydrous titanium(IV) oxide (CHTO), an anatase variety and thermally stable up to 300 °C, has been used for adsorption of Cr(III) and Cr(VI) from the aqueous solutions, the optimum pH-values of which are 5.0 and 1.5, respectively. The kinetic data correspond very well to the pseudo-second order equation. The rates of adsorption are controlled by the film (boundary layer) diffusion, and increase with increasing temperature. The equilibrium data describe very well the Langmuir, Redlich–Peterson, and Toth isotherms. The monolayer adsorption capacities are high, and increased with increasing temperature. The evaluated ΔG^° (kJ · mol^?1) and ΔH^° (kJ · mol^?1) indicate the spontaneous and endothermic nature of the reactions. The adsorptions occur with increase in entropy (ΔS^° = positive), and the mean free energy (E_DR) values obtained by analysis of equilibrium data with Dubinin–Radushkevick equation indicate the ion-exchange mechanism for Cr(III) and Cr(VI)-adsorptions.     

Excess properties and vapour pressure of {3-diethylaminopropylamine + cyclohexane}

The vapour pressures of liquid {3-diethylaminopropylamine (3-DEPA) + cyclohexane} were measured by a static method between T = (273.15 and 363.15) K at 10 K intervals. The excess molar volumes V^E at 298.15 K and excess molar enthalpies H^E at 303.15 K were also measured. The molar excess Gibbs free energies G^E were obtained with Barker’s method and fitted to the Redlich–Kister equation. The Wilson equation was also used. Deviations between experimental and predicted G^E and H^E, by using DISQUAC model, were evaluated     

Excess properties and vapour pressure of (3-diethylaminopropylamine + n-alkanes)

The vapour pressures of liquid (3-diethylaminopropylamine (3-DEPA) + n-heptane) mixtures were measured by a static method between T = (303.15 and 343.15) K at 10 K intervals. The molar excess enthalpies H^E at T = 303.15 K were measured for the systems {3-DEPA + C_nH_2n+2 (n = 6, 7, 12)}. The molar excess Gibbs free energies G^E were obtained with Barker’s method and fitted to the Redlich–Kister equation. The Wilson equation was also used. Deviations between experimental and predicted G^E and H^E, by using group contribution UNIFAC (Gmehling version) model, were evaluated.     

Direct electrochemistry of hemoglobin and glucose oxidase in electrodeposited sol–gel silica thin films on glassy carbon

This work points out that electrogeneration of silica gel (SG) films on glassy carbon electrodes (GCEs) can be applied to immobilize biomolecules – hemoglobin (Hb) or glucose oxidase (GOD) or both of them in mixture – without preventing their activity. These proteins were physically entrapped in the sol–gel material in the course of the electro-assisted deposition process applied to form the thin films onto the electrode surface. SG films were prepared from a precursor solution by applying a suitable cathodic potential likely to induce a local pH increase at the electrode/solution interface, accelerating thereby polycondensation of the silica precursors with concomitant film formation. Successful immobilization of proteins was checked by various physico-chemical techniques. Both Hb and GOD were found to undergo direct electron transfer, as demonstrated by cyclic voltammetry. GCE–SG–Hb gave rise to well-defined peaks at potentials E_c = −0.29 V and E_a = −0.17 V in acetate buffer, corresponding to the Fe^III/Fe^II redox system of heme group of the protein, while GCE–SG–GOD was characterized by the typical signals of FAD group at E_c = −0.41 V and E_a = −0.33 V in phosphate buffer. These two redox processes were also evidenced on a single voltammogram when both Hb and GOD were present together in the same SG film. Hb entrapped in the silica thin film displayed an electrocatalytic behavior towards O₂ and H₂O₂ in solution, respectively in the mM and μM concentration ranges. Immobilized GOD kept its biocatalytic properties towards glucose. Combined use of these two proteins in mixture has proven to be promising for detection of glucose in solution via the electrochemical monitoring of oxygen consumption (decrease of the oxygen electrocatalytic signal).     

Synthesis of silicon–nitrogen derivatives in quasi-interstellar conditions

At 2–4·10^–5 T, a silicon wafer is the target of a 5–10 keV molecular beam of dinitrogen. The products are extracted by an electric field, and analysed by mass. The ions of this primary spectrum are dissociated in a Kr collision chamber. From the fragments thus obtained, one deduces compositions for the secondary ions, and therefore for the primary products. This is helped by the presence, in silicon, of the isotopes ²⁸Si, ²⁹Si and ³⁰Si. Beside the clusters Si_n (n = 1–7), complex molecular species are thus obtained, such as Si₅N₄⁺, Si₅N₄H⁺, Si₅N₄H₂⁺. © 2000 Académie des sciences / Éditions scientifiques et médicales Elsevier SASinterstellar dust / interstellar molecules / atomic impact / silicon / nitrogen derivatives     

Excess molar enthalpies of binary systems containing 2-octanone,hexanoic acid,or octanoic acid at T = 298.15 K

An isothermal titration calorimeter was used to measure the excess molar enthalpies (H^E) of six binary systems at T = 298.15 K under atmospheric pressure. The systems investigated include (1-hexanol + 2-octanone), (1-octanol + 2-octanone), (1-hexanol + octanoic acid), (1-hexanol + hexanoic acid), {N,N-dimethylformamide (DMF) + hexanoic acid}, and {dimethyl sulfoxide (DMSO) + hexanoic acid}. The values of excess molar enthalpies are all positive except for the DMSO- and the DMF-containing systems. In the 1-hexanol with hexanoic acid or octanoic acid systems, the maximum values of H^E are located around the mole fraction of 0.4 of 1-hexanol, but the H^E vary nearly symmetrically with composition for other four systems. In addition to the modified Redlich–Kister and the NRTL models, the Peng–Robinson (PR) and the Patel–Teja (PT) equations of state were used to correlate the excess molar enthalpy data. The modified Redlich–Kister equation correlates the H^E data to within about experimental uncertainty. The calculated results from the PR and the PT are comparable. It is indicated that the overall average absolute relative deviations (AARD) of the excess enthalpy calculations are reduced from 18.8% and 18.8% to 6.6% and 7.0%, respectively, as the second adjustable binary interaction parameter, k_bij, is added in the PR and the PT equations. Also, the NRTL model correlates the H^E data to an overall AARD of 10.8% by using two adjustable model parameters.     

Fabrication of highly conductive Ru/a-CNx:H composite films by anode deposit

Ruthenium(0) composite hydrogenated amorphous carbon nitride (Ru/a-CN_x:H) films were deposition on single crystal silicon (1 0 0) substrate by electrochemical deposition technique with acetonitrile as carbon source, and Ru₃(CO)₁₂ as dopant. In the deposited progress, the Si (1 0 0) acted as anode. The relative atomic ratio of Ru/N/C was about 0.28/0.33/1, and Ru nanocrystalline particles about 8 nm were homogeneously dispersed into the amorphous carbon matrix. After doping Ru into a-CN_x:H films, the conductivity of the films were evidently improved and the resistivity drastically decrease from 10⁸ Ω cm to about 100 Ω cm.     

Excess molar enthalpies of binary mixtures containing 2-decanone or dipentyl ether with long-chain n-alkanes at T = 298.15 K

Excess molar enthalpies (H^E) of binary mixtures of 2-decanone or dipentyl ether with n-alkanes, including n-dodecane, n-tetradecane, and n-hexadecane, were measured with an isothermal titration calorimeter (ITC) at T = 298.15 K under atmospheric pressure. All the measured H^E values are positive over the entire range of composition, indicating that all these mixing processes are endothermic. The H^E values varying with composition are found to be nearly symmetric for each binary system. It was also shown that the H^E values follow the order of n-hexadecane > n-tetradecane > n-dodecane at a given composition in either the 2-decanone or dipentyl ether binary systems. An empirical Redlich–Kister equation correlated quantitatively these new H^E data. The Peng–Robinson and the Patel–Teja equations of state, and the NRTL model were also applied to fit the H^E results. Among these tested correlative models, the Patel–Teja equation of state with two adjustable binary interaction parameters generally yielded the best representation.     

Excess enthalpies and excess volumes of (2-methoxyethanol + 1,4-dioxane) and (1,2-dimethoxyethane + benzene) at temperatures between 283.15 K and 313.15 K

The measurement of excess enthalpies, H^E, at T=298.15 K and densities at temperatures between 283.15 K and 313.15 K are reported for the (2-methoxyethanol + 1,4-dioxane) and (1,2-dimethoxyethane + benzene) systems. The values of H^E and the excess volumes, V^E, are positive, and the temperature dependence of V^E is quite small for (2-methoxyethanol + 1,4-dioxane). The (1,2-dimethoxyethane + benzene) system shows a negative H^E and sigmoid curves in V^E, which change sign from positive to negative with an increase in 1,2-dimethoxyethane. The temperature dependence of V^E for this system is negative.     

Study on thermal decomposition processes of polysiloxane polymers—From polymer to nanosized silicon carbide

The objective of this study is to determine experimentally the usefulness of different polysiloxanes as precursors for bulk ceramic products. Such resins are an alternative for currently commercially used polycarbosilanes. Four types of polysiloxanes were used. The polymers differed in C/Si molar ratio. Thermogravimetric measurements of polymers were made to determine curing and heat treatment conditions. Ceramic yield (Y_c) after heat treatment over the temperature range from 20 to 1700 °C was determined. Structure, microstructure and phase composition of ceramic products obtained from the polymers were investigated. It was found that during thermal decomposition of polymers in the temperature range from 20 to 1000 °C amorphous inorganic Si–C–O ceramics were formed. When the temperature exceeded 1500 °C nanosized 3C and 2H types of silicon carbide crystallized from the resin precursors with C/Si molar ratio higher than 1. On the contrary, heat treatment of polymer with C/Si molar ratio close to 1 did not lead to the formation of nanocrystalline silicon carbide.     

How can H content influence the tribological behaviour of W-containing DLC coatings

In this paper, the influence of the addition of W and H to pure DLC coatings on the structural, mechanical and tribological properties will be presented. The coatings were deposited by r.f. magnetron sputtering from a C target embedded with different numbers of W pellets. Working in non-reactive or reactive atmosphere allowed to deposit H-free or H-containing coatings, respectively, on steel and Si substrates. A Cr adhesion interlayer was interposed between the films and the substrate. Films with W content from 0 to 12 at.% and H incorporated up to a maximum value close to 40 at.% were deposited. All coatings had an amorphous structure, although vestiges of crystallinity could be detected in W-containing films. The addition of W led to a significant hardening of the DLC coating (from ～10 to 18 GPa); inversely, with H incorporation the hardness drop down to values even lower than that of pure DLC films. It was possible to establish a good correlation between the hardness and the residual stresses. In spite of decreasing friction and wear coefficients when alloying DLC with W, almost no difference was found among the W–DLC films whatever the W content was. A similar trend was achieved with the H addition. However, in this case a decrease in the friction coefficient was registered whereas the wear rate increased. The best performance concerning the friction was obtained for an H-containing coating (0.05) whereas, for the wear resistance, H-free W–DLC films were better performing (0.3 × 10^?16 m³ N^?1 m^?1).     

Structure,chemical bonding,and 45Sc solid state NMR of Sc2RuSi2

The silicide Sc₂RuSi₂ was synthesized from the elements by arc-melting. The structure was refined on the basis of single crystal X-ray diffractometer data: Zr₂CoSi₂ type, C2/m, a = 1004.7 (2), b = 406.8 (1), c = 946.6 (2) pm, β = 117.95 (2), wR2 = 0.0230, 743 F² values, and 32 variables. The structure consists of a rigid three-dimensional [RuSi₂] network in which the two crystallographically independent scandium atoms fill larger cages of coordination numbers 16 and 15, respectively. The [RuSi₂] network shows short Ru–Si distances (234–247 pm) and two different Si₂ pairs: Si1–Si1 at 247 and Si2–Si2 at 243 pm. Each silicon atom has trigonal prismatic Sc₆ (for Si2) or Sc₄Ru₂ (for Si1) coordination. These building units are condensed via common edges and faces. The various Sc–Sc distances between the prisms range from 327 to 361 pm. From electronic structure investigation within DFT, chemical bonding shows a major role of Ru–Si bonding and the presence of strong electron localization around Si–Si pairs pointing to a polyanionic silicide network [RuSi₂]^δ?. The ⁴⁵Sc MAS-NMR spectra recorded at 11.7 and 9.4 T clearly resolve the two distinct scandium sites. The large electric field gradients present at both scandium sites result in typical line shapes arising from second-order quadrupole perturbation effects.     

Insertion of the p-complex structure of silylenoid H2SiLiF into X–H bonds (X = C,Si, N,P, O,S, and F)

The insertion reactions of the p-complex structure (A) of silylenoid H₂SiLiF into XH_n molecules (X = C, Si, N, P, O, S, and F; n = 1–4) have been studied by ab initio calculations at the G3(MP2) level. The results indicate that the insertion reactions of A into X–H bonds proceed via three reaction paths, I, II, and III, forming the same products, substituted silanes H₃SiXH_n − 1 with dissociation of LiF, respectively, and all insertion reactions are exothermic. All the seven X–H bonds can undergo insertion reactions with A via path I and II, but only four of them, C–H, Si–H, P–H, and S–H, undergo insertion reactions via path III. The following conclusions emerge from this work: (i) the X–H insertion reactions of A occur in a concerted manner via a three-membered ring transition state; (ii) for path I and II, the stabilization energies of the A–XH_n complexes decrease in the order HF > H₂O > H₂S > NH₃ > SiH₄ > CH₄; (iii) for path I and II, the greater the atomic number of heteroatom (X) in a given row, the easier the insertion reaction of XH_n hydrides and the larger the exothermicity, and for the second-row hydrides, the reaction barriers are lower than for the first-row hydrides; (iv) The barriers of path I are lowest in those of three pathways with the exception of A + SiH₄ system, which barrier of path III is lowest. Moreover, the present study demonstrates that both electronic and steric effects play major roles in the course of insertion reactions of A into X–H bonds.     

Versatile Ru-based metathesis catalysts designed for both homogeneous and heterogeneous processes

The synthesis of new ruthenium-based catalysts applicable for both homogeneous and heterogeneous metathesis is described. Starting from the Hoveyda-Grubbs first generation (1) and the Hoveyda-Grubbs second generation (2) catalysts the homogeneous catalysts [RuCl((RO)₃Si–C₃H₆–N(R′)–CO–C₃F₆–COO)(CH–o-O–iPr–C₆H₄)(SIMes)] (4: R = Et, R′ = H; 5: R = R′ = Me) (SIMes = 1,3-bis(2,4,6-trimethylphenyl)-4,5-dihydroimidazol-2-ylidene) were prepared by substitution of one chloride ligand with trialkoxysilyl functionalized silver carboxylates (RO)₃Si–C₃H₆–N(R′)–CO–C₃F₆–COOAg (3a: R = Et, R′ = H; 3b: R = R′ = Me). These homogeneous ruthenium-species are among a few known examples with mixed anionic ligands. Exchange of both chloride ligands afforded the catalysts [Ru((RO)₃Si–C₃H₆–N(R′)–CO–C₃F₆–COO)(CH–o-O–iPr–C₆H₄)(SIMes)] (9: R = Et, R′ = H; 11: R = R′ = Me) and [Ru((RO)₃Si–C₃H₆–N(R′)–CO–C₃F₆–COO)(CH–o-O–iPr–C₆H₄)(PCy₃)] (8: R = Et, R′ = H; 10: R = R′ = Me). The reactivity of the new complexes was tested in homogeneous ring-closing metathesis (RCM) of N,N-diallyl-p-toluenesulfonamide and TONs of up to 5000 were achieved. Heterogeneous catalysts were obtained by reaction of 4, 5 and 8–11 with silica gel (SG-60). The resultant supported catalysts 4a, 5a, 8a–11a showed reduced activity compared to their homogenous analogues, but rival the activity of similar heterogeneous systems.     

Raman and infrared vibrational modes of tricosane paraffin under high pressure

This paper reports an experimental study about the pressure dependence of the vibrational modes of tricosane paraffin (C₂₃H₄₈) investigated by in situ Raman and infrared spectroscopy in a diamond anvil cell (DAC). The main vibrational bands were followed up to 11 GPa and the observed behavior indicated a conformational disorder induced by pressure, corresponding to a transition from ordered to disordered state of the linear chains from 2 to 5 GPa followed by a transition to an amorphous state under pressure above 5 GPa. However, this behavior was reversible after compression–decompression cycle showing that this linear compound was structurally and chemically stable up to 11 GPa at room temperature.     

Separation of hydrogen from steam using a SiC-based membrane formed by chemical vapor deposition of triisopropylsilane

A silicon carbide-based membrane was formed in the macropores of an α-alumina support tube by chemical vapor deposition of triisopropylsilane at 700–800°C with a forced cross-flow through the porous wall. The membrane permeated gases except H₂O mainly by the Knudsen diffusion mechanism at permeation temperatures of 50–400°C. The H₂/H₂O selectivity was near or below unity because of the hydrophilic nature of the membrane. After a heat-treatment in Ar at 1000°C for 1 h, however, the membrane formed at a final evacuation pressure of 1 kPa exhibited a H₂/H₂O selectivity of 3–5, for a mixed feed of H₂–H₂O–HBr system, associated in a thermochemical water-splitting process. The H₂ permeance was (5–6)×10⁻⁷ mol m⁻² s⁻¹ Pa⁻¹ at 50–400°C. The membrane maintained the H₂/H₂O selectivity for more than 100 h in the H₂–H₂O–HBr mixture at 400°C.     

Pressure effects on a dimetallic ferrimagnet [Mn(en)]3[Cr(CN)6]2 · 4H2O

We have investigated pressure effects on a dimetallic ferrimagnet [Mn(en)]₃[Cr(CN)₆]₂ · 4H₂O (en; ethylenediamine) through the magnetic measurements using a diamond anvil cell in the pressure region up to P = 4.7 GPa. This ferrimagnetic compound has an eminent high transition temperature (Tc) of 69 K at ambient pressure in the structurally characterized molecule-based magnet system. Under hydrostatic pressure, Tc linearly increases against pressure, and exceeds 130 K at P = 4.7 GPa. The amount of the saturated moment hardly changes in the considered pressure region. This pressure experiment might become a prototype of artificial material control for the high-Tc molecule-based magnet.