Preparation and characterization of transparent conducting ZnS:Al films

Al-doped ZnS films were deposited using close-spaced evaporation of the powders synthesized by chemical precipitation method. The films were prepared for different Al concentrations in the range 0–10 at.% on glass substrates kept at 300 °C. The effect of Al-doping on ZnS composition, microstructure and optoelectronic properties of as-grown ZnS layers was determined using appropriate techniques. The films were polycrystalline and showed (111) preferred orientation for all the doping concentrations in spite of an additional phase of Al₂S₃ observed at higher dopant levels. The surface morphological studies indicated that the Al incorporation had a considerable effect on the surface roughness of the films. The optical measurements indicated that the optical energy band gap decreased slightly with the increase of dopant concentration without affecting the optical transmittance characteristics significantly. The electrical analysis indicated that the resistivity of the layers changed significantly with the doping concentration in the layers. The change of photoluminescence behaviour of the as-grown ZnS:Al films with dopant concentration was also studied.     

Spray deposited amorphous RuO2 for an effective use in electrochemical supercapacitor

The structural, surface morphological and optical properties of sprayed ruthenium oxide thin film were investigated using XRD, SEM and optical absorption measurements. The structural analysis from XRD pattern showed the formation of RuO₂ in amorphous phase. The scanning electron micrographs revealed network-like morphology of ruthenium oxide. The optical studies showed a direct band gap of 2.4 eV for ruthenium oxide films. Ruthenium oxide thin film exhibited a cyclic voltammogram indicative high reversibility of a typical capacitive behavior in 0.5 M H₂SO₄ electrolyte. A specific capacitance of 551 F/g was obtained with ruthenium oxide thin film (electrode) prepared by spray pyrolysis method. The specific capacitances of 551 and 450 F/g at the scan rate of 5 and 125 mV/s, respectively, indicate that the capacitance value varies inversely with scan rate.     

XRD and AFM studies of ZnS thin films produced by electrodeposition method

The structure and morphology of ZnS thin films were investigated. ZnS thin films have been grown on an indium tin oxide glass substrate by electrodeposition method using zinc chloride and sodium thiosulfate solutions at room temperature. The X-ray diffraction patterns confirm the presence of ZnS thin films. From the AFM images, grain size decreases as the cathodic potential becomes more negative (from ?1.1 to ?1.3 V) at various deposition periods. Comparison between all the samples reveals that the intensity of the peaks increased, indicating better crystalline phase for the films deposited at ?1.1 V. These films show homogeneous and uniform distribution according to AFM images. On the other hand, XRD analysis shows that the number of ZnS peaks increased as deposition time was increased from 15 to 30 min at ?1.1 V. The AFM images show thicker films to be formed at ?1.1 V indicating more favourable condition for the formation of ZnS thin films.     

Fe-doped SnO2 transparent semi-conducting thin films deposited by spray pyrolysis technique: Thermoelectric and p-type conductivity properties

In this paper, we report structural, electrical, optical, and especially thermoelectrical characterization of iron (Fe) doped tin oxide films, which have been deposited by spray pyrolysis technique. The doping level has changed from 0 to 10 wt% in solution ([Fe]/[Sn] = 0–40 at% in solution). The thermoelectric response versus temperature difference has exhibited a nonlinear behavior, and the Seebeck coefficient has been calculated from its slope in temperature range of 300–500 K. The Hall effect and thermoelectric measurements have shown p-type conductivity in SnO₂:Fe films with [Fe]/[Sn] ≥ 7.8 at%. In doping levels lower than 7.8 at%, SnO₂:Fe films have been n-type with a negative thermoelectric coefficient. The Seebeck coefficient for SnO₂:Fe films with 7.8 at% doping level has been obtained to be as high as +1850 μV/K. The analysis of as-deposited samples with thicknesses ～350 nm by X-ray diffraction (XRD) and scanning electron microscopy (SEM) has shown polycrystalline structure with clear characteristic peak of SnO₂ cassiterite phase in all films. The optical transparency (T%) of SnO₂:Fe films in visible spectra decreases from 90% to 75% and electrical resistivity (ρ) increases from 1.2 × 10^?2 to 3 × 10³ Ω cm for Fe-doping in the range 0–40 at%.     

Crystal structure and phase transitions of sodium potassium niobate perovskites

This paper presents the crystal structure and the phase transitions of K_xNa_1?xNbO₃ (0.4 ≤ x ≤ 0.6). X-ray diffraction measurements were used to follow the change of the unit-cell parameters and the symmetry in the temperature range 100–800 K. At room temperature all the compositions exhibited a monoclinic metric of the unit cell with a small monoclinic distortion (90.32° ≤ β ≤ 90.34°). No major change of symmetry was evidenced in the investigated compositional range, which should be characteristic of the morphotropic phase-boundary region. With increasing temperature, the samples underwent first-order monoclinic–tetragonal and tetragonal–cubic transitions. Only the potassium-rich phases were rhombohedral at 100 K.     

Structural and optical properties of sprayed Zn1−xMnxO films

In recent years the dilute magnetic semiconductors have received much attention due to the complementary properties of semiconductor and ferromagnetic behaviour. Zn_1−xMn_xO thin films have been synthesized by chemical spray pyrolysis at a substrate temperature of 400 °C with different manganese compositions that vary in the range, 0.0 ≤ x ≤ 0.25, on Corning 7059 glass substrates. The X-ray diffraction studies revealed that all the films were strongly oriented along the (002) orientation corresponding to the hexagonal wurtzite structure. The crystalline quality of the layers was found to decrease with the increase of x, however, no structural changes were observed over the ‘Mn’ composition range investigated. The optical absorption studies revealed that the energy band gap of the films followed the Vegard's law. The optical band gap of the films prepared at x = 0.15 was found to be ∼3.35 eV. The photoluminescence characteristics of Zn_1−xMn_xO films showed an emission peak at around 390 nm with a broad band about 530 nm. The details of these results were reported and discussed.     

Phase transitions of CaTiO3 ceramics sintered with the aid of NaF and MgF2

New phases with initial composition (1 ? x)CaTiO₃ ? xNaF ? xMgF₂ (0 ≤ x ≤ 0.20) have been prepared at low temperature (950 °C) from mixtures of CaTiO₃ and fluorides NaF and MgF₂. The oxyfluorides obtained have been characterized by X-ray diffraction at room temperature and indexed by isotypy with orthorhombic CaTiO₃. The microstructures of these phases are observed by scanning electron microscopy. Dielectric measurements have been carried out during cooling cycle from 500 °C to room temperature at two frequencies (100 Hz, 1 kHz). Differential scanning calorimetry (DSC), thermogravimetry (TG) and differential thermogravimetry (DTG) analyses have been performed, respectively, from room temperature up to 550 °C (DSC) and 920 °C (TG–DTG). The dielectric measurements revealed two anomalies which have been confirmed by DSC analyses. These phenomena are ascribed to second order phase transitions. The variation of the real permittivity with temperature is in agreement with the class I capacitor specifications. However, the dielectric losses have to be improved.     

The p–T phase diagram for ferroelectric bis-thiourea pyridinium nitrate

The effect of temperature and pressure on physical properties of the ferroelectric bis-thiourea pyridinium nitrate inclusion compound has been studied by dielectric spectroscopy and nuclear magnetic resonance (NMR). At ambient pressure the ferroparaelectric phase transition observed at T₂ = 216 K is continuous in contrast to the nonferroelectric phase transition observed at T₁ = 273 K. Under small pressures, the temperatures of the phase transitions T₁ and T₂ increase with increasing pressure. Starting from about 250 MPa, T₁ temperature decreases with increasing pressure, while T₂ temperature increases with increasing pressure. At 450 MPa and 245 K a triple point is observed. Bis-thiourea pyridinium nitrate undergoes a continuous phase transition from the ferroelectric to paraelectric phase under 450 MPa, while above this pressure the phase transition from the ferroelectric to paraelectric phase is discontinuous. The change in the phase transition character is related to the crystallographic change in the group–subgroup relation between the ferro- and paraelectric phases taking place with increasing pressure.     

Optical,structural and electrochromic studies of molybdenum oxide thin films with nanorod structure

The MoO₃ thin films were prepared via sol–gel dip coating method on glass and FTO glass substrate. The optical and other properties of multilayered MoO₃ films with 2–10 layers were investigated. The MoO₃ films were studied using UV–Visible transmission, XRD, SEM, FTIR and Cyclic Voltammetry (CV) measurements. The band gap value for MoO₃ films was evaluated and in the range of 3.2 eV–3.72 eV. The XRD spectrum reveals that the crystallinity increases along the (020) and (040) planes with the increase in thickness. The SEM images showed the formation of nanorods upto six layers. The FTIR spectrum confirms the formation of MoO₃. The 6 layered films show the maximum anodic (spike)/cathodic (peak) diffusion coefficient of 18.84/1.701 × 10^?11 cm²/s. The same film exhibits the change in optical transmission of 49% with the bleached/coloured state transmission of 62/13%.     

Effect of hydrogen-sulfide on the hydrogen permeance of palladium–copper alloys at elevated temperatures

The hydrogen permeance of several 0.1 mm thick Pd–Cu alloy foils (80 wt.% Pd–20 wt.% Cu, 60 wt.% Pd–40 wt.% Cu and 53 wt.% Pd–47 wt.% Cu) was evaluated using transient flux measurements at temperatures ranging from 603 to 1123 K and pressures up to 620 kPa both in the presence and absence of 1000 ppm H₂S. Sulfur resistance, as evidenced by no significant change in permeance, was correlated with the temperatures associated with the face-centered-cubic crystalline structure for the alloys in this study. The permeance of the body-centered cubic phase, however, was up to two orders of magnitude lower when exposed to H₂S. A smooth transition from sulfur poisoning to sulfur resistance with increasing temperature was correlated with the alloy transition from a body-centered-cubic structure to a face-centered-cubic structure.     

Effect of swift heavy ion irradiation on the physical properties of CuIn(S0.4Se0.6)2 alloy thin films prepared by solution growth technique

Alloy thin films of CuIn(S_0.4Se_0.6)₂ material were deposited using the solution growth technique. The various deposition parameters such as pH of solution, time, concentration of ions and temperature have been optimized for the device grade thin films. The as-deposited films were annealed in a rapid thermal annealing (RTA) system at 450 °C in air for 5 min and subjected to high-energy Ag ion irradiations. Ag ion irradiation has been performed with an energy of 100 MeV at a fluency of 5×10¹² ions/cm² on the thin film. The changes in optical and electrical properties that occurred before and after post-deposition treatments in CuIn(S_0.4Se_0.6)₂ thin films were studied using X-ray diffraction (XRD) and AFM; increase in crystallinity was observed after annealing and irradiation. In addition, structural damages were observed in irradiated thin films. After annealing and irradiation, the surface roughness was seen to be increased. Decrease in resistivity was observed, which is consistent with the optical energy band gap. The results are explained by considering the high energy deposited due to the electronic energy loss upon irradiation, which modified the properties of the material.     

Effect of Annealing on the Electrical Properties of CuxS Thin Films

Copper sulphide CuS was deposited on three substrates; glass, Indium Tin Oxide (ITO) and Ti by using spray pyrolysis deposition (SPD). After depositing CuS thin films on the substrates at 200 °C, they were annealed at 50, 100, 150, and 200 °C for 1 hour. Structural measurements revealed covellite CuS and chalcocite Cu₂S phases for thin films before and after annealing at 200 °C with changes in intensities, and only covellite CuS phase for thin films after annealing at 50, 100, and 150 °C. Morphological characteristics show hexagonal-cubic crystals for the CuS thin film deposited on glass substrate and plates structures for films deposited on ITO and Ti substrates before annealing, these crystals became bigger in size and there were be oxidation and some agglomerations in some regions with formation of plates for CuS on glass substrate after annealing at 200 °C. For Hall Effect measurements, thin films sheet resistivity and mobility increased after annealing while the carrier concentration decreased. Generally, the thin film deposited on ITO substrate had the lowest resistivity and the highest carrier concentration before and after annealing. The thin film deposited on Ti substrate had the highest mobility before and after annealing, which makes it the best thin film for device performance. The objective of this research is to show the improvement of thin films electrical properties especially the mobility after annealing those thin films.     

Effect of Hg2+doping and of the annealing temperature on the nanostructural properties of TiO2 thin films obtained by sol–gel method

This work is a study of Hg²⁺-doped TiO₂ thin films deposited on silicon substrates prepared by sol–gel method and treated at temperatures ranging between 600 to 1000 °C for 2 h. The structural and optical properties of thin films have been studied using different techniques. We analyzed the vibrations of the chemical bands by Fourier transform infrared (FTIR) spectroscopy and the optical properties by UV–Visible spectrophotometry (reflection mode) and photoluminescence (PL). The X-ray diffraction and Raman spectra of TiO₂ thin films confirmed the crystallization of the structure under the form of anatase, rutile, mercury titanate (HgTiO₃) as a function of the annealing temperature. The observation by scanning electron microscopy (SEM) showed the changing morphology, with respect to nanostructures, nanosheets, nanotubes, with the annealing temperature. The diameters of nanotubes ranged from 50 nm to 400 nm. The photoluminescence and reflectance spectra indicated that these structures should enhance photocatalytic activity.     

Thickness dependent physical properties of close space evaporated In2S3 films

In recent years, In₂S₃ is considered as a promising buffer layer in the fabrication of heterojunction solar cells. Film thickness is one of the important parameters that alters the physical characteristics of the grown layers significantly. The effect of film thickness on the structural, morphological, optical and electrical properties of close space evaporated In₂S₃ layers has been studied. In₂S₃ thin films with different thicknesses in the range, 100–700 nm were deposited on Corning glass substrates at a constant substrate temperature of 300 °C. The films were polycrystalline exhibiting strong crystallographic orientation along the (103) plane. The deposited films showed mixed phases of both cubic and tetragonal structures up to a thickness of 300 nm. On further increasing the film thickness, the layers showed only tetragonal phase. With increase of film thickness, both the crystallite size and surface roughness in the films were found to be increased. The optical constants such as refractive index and extinction coefficient of the as-grown layers have been calculated from the optical transmittance data in the wavelength range, 300–2500 nm. The optical transmittance of the films was decreased from 82% to 64% and the band gap varied in the range, 2.65–2.31 eV with increase of film thickness. The electrical resistivity as well as the activation energy was evaluated and found to decrease with film thickness. The detailed study of these results was presented and discussed.     

A new processing method of CaZn2(OH)6·2H2O powders: Photoluminescence and growth mechanism

In this communication, we report on the formation of calcium hexahydroxodizincate dehydrate, CaZn₂(OH)₆·2H₂O (CZO) powders under microwave-hydrothermal (MH) conditions. These powders were analyzed by X-ray diffraction (XRD), Field-emission gum scanning electron microscopy (FEG-SEM), ultraviolet-visible (UV-vis) absorption spectroscopy and photoluminescence (PL) measurements. XRD patterns confirmed that the pure CZO phase was obtained after MH processing performed at 130 °C for 2 h. FEG-SEM micrographs indicated that the morphological modifications as well as the growth of CZO microparticles are governed by Ostwald-ripening and coalescence mechanisms. UV-vis spectra showed that this material have an indirect optical band gap. The pure CZO powders exhibited an yellow PL emission when excited by 350 nm wavelength at room temperature.     

High-pressure Raman spectra of racemate dl-alanine crystals

Raman spectroscopy investigations of dl-alanine crystal under high pressures have been carried out up to 18.0 GPa. For instance, around 1.0 GPa and between 1.7 and 2.3 GPa changes in the Raman profile were observed and associated to conformational changes of the molecules in the unit cell or to a phase transition accompanied to slight conformational change of the molecule through CH and CH₃ groups. Moreover, between 6.0 and 7.3 GPa, the appearance of a new low energy lattice modes and to the splitting of a band assigned to the stretching vibration of the CCH₃ moiety were related to a second phase transition. Finally, changes in lattice modes, red shift of the band associated to CCH₃ stretching and increasing of line-width of the band associated to the wagging of CO₂, between 11.6 and 13.2 GPa, are ascribed to a third phase transition. On release of pressure the original phase was obtained again.     

Characterization of thin InP anodic oxide layers: Correlation of morphological investigations with chemical and electrical properties

Depending on the applied electrochemical parameters, various oxide films can be grown onto InP in aqueous media. In this work, two oxide layers have been grown in borate buffer solution at pH = 9 by applying a low (0.2 mA cm⁻²) or a high (30 mA cm⁻²) current density, but a similar coulometric charge. Capacitance–voltage measurements performed before and after the anodic processes have been made to investigate the electrical properties of new interfaces, while X-ray photoelectron spectroscopy (XPS) analysis and atomic force microscopy (AFM) observations were used to access to the chemical and topographic aspects of the two oxidized surfaces. It is demonstrated that AFM observations coupled with electrochemical and XPS measurements is a good probe for the study of thin oxide on InP. A correlation between the anodization parameters and the resulting electrical and morphological aspects of the anodic layers is clearly evidenced.     

Synthesis and characterization of LiCo3/5Mn2/5VO4 ceramics

Dielectric and a.c. conductivity properties of LiCo_3/5Mn_2/5VO₄ ceramic are investigated. This compound is prepared by solution-based chemical method and the formation is checked by X-ray diffraction (XRD) study. XRD analysis at room temperature shows an orthorhombic phase. Frequency dependence of dielectric constant (?_r) at different temperatures shows a dispersive behavior at low frequencies. Temperature dependence of ?_r at different frequencies indicates the transition temperature (T_c) = 235 °C, 245 °C, 257 °C and 265 °C with (?_r)_max. ～3689, 1373, 750 and 386 for 10, 50, 100 and 200 kHz respectively. A.c. conductivity analysis indicates that electrical conduction in the material is a thermally activated process.     

Structure,microstructure and optical properties of cerium oxide thin films prepared by electron beam evaporation assisted with ion beams

Cerium oxide thin films were prepared by combined electron beam evaporation and ion beam assisted deposition techniques (EBE–IBAD). Their crystallographic structures, microstructures, and optical properties were studied as a function of the substrate temperature (200 °C and 500 °C) and the dose of Ar⁺ or O₂⁺ ion assistance during growth. X-ray diffraction was used to estimate the crystallographic texture, grain size, microstrain and lattice constant. Sample microstructure was studied by scanning electron microscopy. Transmission UV–vis spectroscopy was employed to obtain optical information (band gap, density, and refractive index). All films showed a cubic CeO₂ structure with different preferential growth depending on the preparation conditions. The bombardment with Ar⁺ ions during film deposition proved to be very effective for changing the film structure, hindering columnar growth and producing smaller grain sizes and higher values of microstrain and lattice constant. Films grown at 200 °C and Ar⁺ ion assistance showed the highest density, the smallest grain size (～10 nm) and a high expansion of the lattice constant (up to ～1%). This expansion is related to the presence of Ce³⁺ at the grain boundaries. Ion assistance during the growth leads to films with higher values of refractive index and lower values of band gap.     

Development of high-performance cathodes for IT-SOFCs through beneficial interfacial reactions

We propose a new way to develop high-performance cathodes for IT-SOFCs by utilizing the interfacial reactions. SrCoO_x was selected as the starting electrode material, which took a vacancy-ordered 2H BaNiO₃-type structure and showed negligible ionic conductivity and low electrical conductivity. Phase reactions between SrCoO_x and Sm_0.2Ce_0.8O_1.9 happened at 900 °C or higher, resulting in the incorporation of Sm and Ce into its lattice structure. This promoted the phase transition to a cubic perovskite and led to substantial increase in the electrical conductivity and oxygen mobility of the electrode. By utilizing such phase reactions, the SrCoO_x + Sm_0.2Ce_0.8O_1.9 composite was developed into a high performance electrode with a low area specific resistance of 0.08 Ω cm^?2 at 650 °C. An anode-supported cell with such electrode delivered a peak power density of 795 mW cm^?2 at 600 °C.