退火处理对ZnS: Cu,Mn电致发光材料亮度的影响

ZnS系列电致发光已经在低亮度照明、液晶显示、汽车和航空仪表等领域得到广泛的应用.Mn、Cu是ZnS电致发光材料常用的激活剂,Mn²⁺在晶体中形成橙色发光中心,发光中心波长580nm;Cu⁺在晶体中不但形成发光中心,还形成发光所必需的Cu_xS,因此二者对发光亮度有明显的影响.由于ZnS:Cu,Mn橙色发光材料中的Mn掺杂量较大,影响了发光材料的内在结构,在灼烧过程中Mn化合物的其他成分还可能对发光材料的亮度产生了不利的影响,导致发光材料的亮度远低于蓝绿色材料.采用在退火过程中添加适量的Mn、Cu化合物,通过低温扩散的方式,使Mn²⁺均匀进入到ZnS晶格,获得了亮度较高的ZnS:Cu,MnACEL粉末材料.并对制备工艺中Cu、Mn含量、掺杂Mn化合物的形式、退火温度等对发光亮度的影响进行了讨论.实验中发现,在三种Mn化合物中(碳酸锰、乙酸锰、硫酸锰),以乙酸锰掺杂的材料亮度最高.得到Mn(以乙酸锰为添加物)的添加量为2%、Cu的添加量为0.1%、退火温度为700℃时,所制备的材料亮度最高.低温退火时掺杂Mn的材料亮度比常规材料的亮度高出1倍.     

基于长余辉材料的激光书写和显示

本文给出了长余辉材料一个新的用途,研制了一台以长余辉材料为屏幕的激光书写显示装置,可以人为控制激光笔在余辉材料上随意书写文字、画图并显示.该装置利用单片机和步进电机控制两组轴镜在不同方向的转动,从自己建立的开源矢量图库中调用相关图片,使激光光束在长余辉材料上进行二维矢量的扫描,完成文字书写和绘图显示.用VASP(Vienna abinitio simulation package)软件计算出长余辉材料Mn(H_2PO_4)_2的能级结构,测试了SrAl_2O_4:Eu~(2+),Dy~(3+)和Mn(H_2PO_4)_2的余辉强度衰减曲线,便于调整样机电机的书写速度,测试了Mn(H_2PO_4)_2的反射谱和拉曼谱,其拉曼峰值在625,769和1049 nm及远红外.通过理论和实验研究,掌握了与相应长余辉材料匹配的激发最佳激光波段.制作样机后得到英文、中文、图像的实时书写和显示结果.本装置犹如一只无形的"笔"在纸上挥舞,流畅书写绘画,书写过程配上音乐颇具观赏性,该装置可应用于商业广告显示、动态标语书写、教学投影辅助设备、舞台效果、新型艺术表现形式等领域.     

半磁半导体Zn1-xMnxS中的能量传递

本文测量了Zn1-xMnxS在不同Mn浓度(0.001x=0.062,T=80K时的Zn1-xMnxS的发射谱及其衰减曲线,得到两个衰减寿命:τ1=70μs,τ2>1000μs,这表明在高Mn浓度时存在着两个弛豫过程:一个是较快的,另一个则是较慢的,根据Goede等人的实验结果可以断定较慢的过程来自孤立的Mn2-离子,那么便可以判知较快的过程是来源于Mn2-离子对.正是高Mn浓度下的Zn1-xMnxS中存在着Mn2+-Mn2+离子对,在其间有能量迁移以及它和能量受主之间的能量传递造成了该体系中的IR发射.     

New aspects of martensite stabilization in Ni–Mn–Ga high-temperature shape memory alloy

We report on new aspects of martensite stabilization in high-temperature shape memory alloys. We show that, due to the difference in activation energies among various structural defects, an incomplete stabilization of martensite can be realized. In material aged at high temperatures, this gives rise to a variety of unusual features which are found to occur in the martensitic transformation. Specifically, it is shown that both forward and reverse martensitic transformations in a Ni–Mn–Ga high-temperature shape memory alloy can occur in two steps. The observed abnormal behaviour is evidence that, in certain circumstances, thermoelastic martensitic transformation can be induced by diffusion.     

Ab-initio calculation of magnetic properties of Mn-doped ZnGeN2

We have performed a density functional theory within a generalized gradient approximation study of Mn-doped zinc germanium dinitride (ZnGeN₂) semiconductor. Our results show Mn-doped ZnGeN₂ to be antiferromagnetic for Mn_Zn (Mn substitutes Zn site) and ferromagnetic for Mn_Ge (Mn substitutes Ge site). Ferromagnetic state is also preferred if Mn atoms substitute both Zn and Ge sites. Formation of half-metallic ferromagnetism is possible in this type of material.     

The growth of manganese layers on Si(1 0 0) at room temperature: A photoelectron spectroscopy study

The combination of spin-and charge based electronics in future devices requires the magnetic doping of group IV semiconductors, and the formation of ferromagnetic contacts. The doping of Mn with Si is one of the material systems which is discussed in this context. The present study focuses on the growth of Mn on a Si(100)(2x1) surface, and the evolution of the surface was observed as a function of Mn coverage with synchrotron-based photoelectron spectroscopy. The reaction of Mn with the Si(100) surface at room temperature leads the formation of silicide at the boundary between the Si substrate and the Mn-overlayer, presumably with MnSi stoichiometry. The residual sub-oxide reacts with the Mn and therefore incorporates a few percent of Mn-O-Si at the interface. The analysis of the sub-oxide composition indicates that the Si⁺¹ component is the most reactive oxidation state. The overlayer is dominated by Mn, either as Mn-metal or as a Mn-rich silicide phase, and the metallic layer introduces a band bending in Si. As a consequence of our observations, including information from a recent STM study, the formation of ferromagnetic contacts which require ideally a flat and compositionally homogenous overlayer, cannot be achieved through room temperature deposition of Mn on the Si(100) (2x1) surface. The influence of residual oxides and surface defects on the growth process will be further investigated.     

Magnetic scattering of spin polarized carriers in (In, Mn)Sb dilute magnetic semiconductor

Magnetoresistance measurements on the magnetic semiconductor (In, Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn2+ ions located outside the ferromagnetically ordered regions when the system is below T(c). A model is proposed, based on the p-d exchange between spin-polarized charge carriers and localized Mn2+ ions, which accounts for the observed behavior both below and above the ferromagnetic phase transition. The suggested picture is further verified by high-pressure experiments, in which the degree of magnetic interaction can be varied in a controlled way.     

Ce3+,Mn2+激活氟磷酸钙的合成及其形成机理

合成了发光效率较高、光衰较小的黄色光致发光材料——Ce3+,Mn2+激活的氟磷酸钙(FAP:Ce3+,Mo2+).研究了各种工艺条件对该材料的发光效率、发光光谱及老化性能的影响.结果表明,最佳的灼烧温度在900℃左右;弱还原气氛或保护气氛有利于得到性能较好的材料;原料的化学剂量比M a/Mp,对材料的发光效率和发光光谱影响不大,但对老化速率影响较大,原料中F量应高于正常化学剂量比近一倍.通过对材料形成过程的热分析(差热分析和热失重分析),发现FAP:Ce3+,Mn2+的形成过程与普通卤粉差异很大,研究表明,FAP:Ce2+,Mn2+的形成主要是由650℃～800℃时发生的气相输运过程而引起的.     

First-principles study of manganese-stabilized hafnia

We present a first-principles study of the electronic and magnetic properties of cubic hafnium dioxide stabilized by Mn. We find this material to be ferromagnetic and half-metallic, with the Mn-impurity electronic states lying in the band gap of hafnia for a wide range of manganese concentration. Our ab initio calculations, within the local spin-density approximation, demonstrate that Mn-doped hafnia may be ferromagnetic at 700 K while its high-T_C ferromagnetism is robust to the oxygen vacancy defects and to how the Mn impurities are distributed over the cation sublattice.     

Effect of thermal treatment on the structural characteristics and electrochemical properties of amorphous Mn oxide prepared by an ethanol-based precipitation method

Nanostructured amorphous Mn oxide, for use as an electrode material in supercapacitors, was prepared by a facile precipitation method using ethanol. After thermal treatment at various temperatures, the structural characteristics and electrochemical properties of the prepared Mn oxide were investigated. Importantly, the experimental results revealed that the alkyl chain of ethanol prevented the excessive crystallization of Mn oxide, resulting in the production of nanostructured Mn oxide. In addition, electrochemical properties of synthesized material were highly dependent on the structural characteristics. Mn oxide thermally treated at 300 °C, which had an optimized crystalline structure, showed the highest specific capacitance of 161 F/g in this study.     

Enhanced oscillator strengths and optical parameters of doped ZnS bulk and nanophosphors

We synthesize and investigate the oscillator-strength (OS), dipole-moment (DM), and integrated cross-section values (ICSVs) of singly (Mn) and doubly (Mn and Co or Ni) doped samples of ZnS bulk and nanophosphors. The oscillator-strength values (OSVs) are found to enhance by three orders of magnitude when Co or Ni dopant is incorporated in ZnS:Mn bulk phosphors, which strongly suggests that a quencher dopant triggered an energy-transfer process in the host ZnS material. Nevertheless, although these quencher dopants were previously considered to kill the luminescence from the host material, we used these dopants in ZnS:Mn to create an additional pathway for the relaxation of the carrier, and to initiate the energy-transfer mechanism. On the other hand, a four orders of magnitude enhancement in the OSVs was observed on incorporating the quencher dopants in ZnS:Mn nanophosphors, which is attributed to the fact that our nanosamples are related to a strong-confinement case while the quencher dopant played a significant role in the variation of OSVs. Moreover, the analysis of OSVs showed that excitonic/defect level emission from ZnS host is due to a weak electric dipole transition (WEDT), while a magnetic dipole transition (MDT) dominates in the case of ZnS:Mn nanophosphors. Based on the present investigations, we clearly obtained an origin of excitonic- and impurity-related emission from the doped ZnS bulk and nanophosphor samples, which were almost vague in the previous studies of other researchers.     

Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer

We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal-insulator-ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction and the two-step magnetization reversal process in this material.     

Voltage-controlled spin selection in a magnetic resonant tunneling diode

We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.     

热退火对Mn离子注入非故意掺杂GaN微结构、光学及磁学特性的影响

通过Mn离子注入非故意掺杂GaN外延层制备了GaN:Mn薄膜,并研究了退火温度对GaN:Mn薄膜的微结构、光学及磁学特性的影响.对不同退火温度处理后的GaN:Mn薄膜的拉曼谱测试显示,出现了由与离子注入相关的缺陷的局域振动(LV)和(Ga,Mn)N中Mn离子的LV引起的新的声子模.在GaN:Mn薄膜的光致发光谱中观察到位于2.16,2.53和2.92 eV处的三个新发光峰(带),其中位于2.16 eV处的新发光带不能排除来自Mn相关辐射复合的贡献.对GaN:Mn薄膜的霍尔测试显示,退火处理后样品表现出n型体材料特征.对GaN:Mn薄膜的振动样品磁强计测试显示,GaN:Mn薄膜具有室温铁磁性,其强弱受Mn相关杂质带中参与调节磁相互作用的空穴浓度的影响.     

A first-principles study of the structural and elastic properties of orthorhombic and tetragonal Ca3Mn2O7

The structural and elastic properties of multiferroic Ca3Mn2O7 with ferroelectric orthorhombic （O-phase） and paraelectric tetragonal structures （T-phase） have been studied by first-principles calculations within the generalized gradient approximation （GGA） and the GGA plus Hubbard U approaches （GGA ＋ U）. The calculated theoretical structures are in good agreement with the experimental values. The T-phase is found to be antiferromagnetic （AFM） and the AFM O-phase is more stable than the T-phase, which also agree with the experiments. On these bases, the single-crystal elastic constants （Cijs） and elastic properties of polycrystalline aggregates are investigated for the two phases. Our elasticity calculations indicate Ca3Mn2O7 is mechanically stable against volume expansions. The AFM O-phase is found to be a ductile material, while the AFM T-phase shows brittle nature and tends to be elastically isotropic. We also investigate the influence of strong correlation effects on the elastic properties, qualitatively consistent results are obtained in a reasonable range of values of U. Finally, the ionicity is discussed by Bader analysis. Our work provides useful guidance for the experimental elasticity measurements of Ca3Mn2O7, and makes the strain energy calculation in multiferroic Ca3Mn2O7 thin films possible.     

基于XPS与XAS的稀磁半导体GaMnN电子结构研究

采用基于同步辐射技术的X射线光电子能谱(XPS)与X射线吸收谱(XAS)测试由金属有机化学气相沉积(MOCVD)技术制备的不同Mn掺杂浓度的稀磁半导体GaMnN薄膜的电子结构,探究Mn掺杂浓度对磁性原子Mn周围的局域环境和电子态等方面的影响,并阐述材料铁磁性变化的机理. XPS和XAS图谱分析表明：Mn²⁺和Mn³⁺共存于薄膜样品内,样品D中Mn²⁺占比高达70%-80%,N空位随Mn掺杂浓度增加而增多且N空位能够使空穴浓度降低,导致Mn 3d和N 2p轨道间的相互交换作用减小,从而减弱体系铁磁性.此外,Mn不同的掺杂浓度会影响GaMnN薄膜p-d耦合杂化能力的强弱,当掺Mn 1.8%时具有较强的p-d耦合杂化能力.     

Electron irradiation-enhanced core/shell organization of Al(Cr,Fe, Mn)Si dispersoids in Al–Mg–Si alloys

The age hardening 6061-T6 aluminium alloy has been chosen as structural material for the core vessel of the material testing Jules Horowitz nuclear reactor. The alloy contains incoherent Al(Cr, Fe, Mn)Si dispersoids whose characterization by energy-filtered transmission electron microscopy (EFTEM) analysis shows a core/shell organization tendency where the core is (Mn, Fe) rich, and the shell is Cr rich. The present work studies the stability of this organization under irradiation. TEM characterization on the same particles, before and after 1 MeV electron irradiation, reveals that the core/shell organization is enhanced after irradiation. It is proposed that the high level of point defects, created by irradiation, ensures a radiation-enhanced diffusion process favourable to the unmixing forces between (Fe, Mn) and Cr. Shell formation may result in the low-energy interface segregation of Cr atoms within the (Fe, Mn) system combined with the unmixing of Cr, Fe and Mn components.     

低温扩散Mn2+制备ZnSⅩⅣMn,Cu电致发光材料

研究了不同Mn的化合物掺杂在不同退火处理条件下对ZnSⅩⅣMn,CuACEL粉末的发光亮度的影响.在低温下扩散Mn²⁺掺杂的方法,有效降低了Mn盐中其它杂质对发光的影响,和直接高温法制备的ZnSⅩⅣMn,CuACEL材料相比,提高了材料的发光亮度.     

Annealing texture of a cold-rolled Fe–Mn–Al–Si–C alloy

The study of recrystallization texture of a cold deformed Fe–Mn–Al–Si–C alloy, with about 30% Mn, has been discussed in this paper. The alloy is fully austenitic at room temperature, and therefore, principal FCC rolling textures were developed in this material at different stages of cold rolling. The present study was undertaken to observe the transformation of FCC rolling texture during recrystallization of a heavily cold deformed specimen. It was observed that isothermal annealing at 750 °C led to a weak recrystallisation texture, which was quite similar to the deformation texture developed at the early stage of cold rolling. During recovery stage, a strong Bs/Goss-type texture was developed, which was identified as a new observation in this work.