Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures

Effects of a longitudinal magnetic field on optical spin injection and detection in InAs/GaAs quantum dot (QD) structures are investigated by optical orientation spectroscopy. An increase in the optical and spin polarization of the QDs is observed with increasing magnetic field in the range 0-2?T, and is attributed to suppression of exciton spin depolarization within the QDs that is promoted by the hyperfine interaction and anisotropic electron-hole exchange interaction. This leads to a corresponding enhancement in spin detection efficiency of the QDs by a factor of up to 2.5. At higher magnetic fields, when these spin depolarization processes are quenched, the electron spin polarization in anisotropic QD structures (such as double QDs that are preferably aligned along a specific crystallographic axis) still exhibits a rather strong field dependence under non-resonant excitation. In contrast, such a field dependence is practically absent in more 'isotropic' QD structures (e.g.?single QDs). We attribute the observed effect to stronger electron spin relaxation in the spin injectors (i.e.?wetting layer and GaAs barriers) of the lower-symmetry QD structures, which also explains the lower spin injection efficiency observed in these structures.     

Control of spin state in CdSe quantum dots by coupling with magnetic semiconductor quantum dots

We studied spin states of CdSe quantum dots (QDs) coupled with CdMnSe QDs by probing circular polarization of photoluminescence spectrum under external magnetic fields. The bandgap energies of CdSe and CdMnSe QDs are close to each other and photoluminescence mainly originates from CdSe QDs due to relatively low radiation efficiency of CdMnSe QDs. The photoluminescence lifetime as well as its intensity was decreased with increasing magnetic field, which was ascribed to the increase in the ground state wavefunctions in CdMnSe QDs. The decrease was more pronounced for spin down electrons, which was explained by the difference in spin up and down wave functions under magnetic fields. Our results show that the spin state of CdSe QDs can be manipulated by coupling with CdMnSe QDs.     

Optical polarization of nuclei and ODNMR in GaAs/AlGaAs quantum wells

Optical orientation of electrons was used to polarize the crystal lattice nuclei in quantum-size heterostructures and to study the effect of the conduction band spin splitting on the spin states of quasi-two-dimensional (2D) electrons drifting in an external electric field. High (～1%) nuclear polarization was registered using polarized luminescence and ODNMR in single GaAs/AlGaAs quantum wells. Measurement was made of the hyperfine interaction fields created by polarized nuclei on electrons and by electrons on nuclei. The spin-lattice relaxation of nuclei on the non-degenerate 2D electron gas was calculated. A comparison of the theoretical and experimental longitudinal relaxation times permitted the conclusion that the localized charge carriers are responsible for nuclear polarization in quantum wells in the temperature range of 2–77 K. A new effect has been studied, i.e. induction of an effective magnetic field acting on 2D electron spins when electrons drift in an external electric field in the quantum well plane. This effective field B_eff is due to the spin splitting of the conduction band of 2D electrons. The paper discusses possible registration of an ODNMR signal when the field B_eff is modulated by an electric current during optical orientation.     

Optically detected electron spin polarization and Hanle effect in AlGaAs/GaAs heterostructures

The spin polarization of optically created conduction electrons in p-type AlGaAs/GaAs heterostructures was observed via the degree of circular polarization of the photoluminescence. Application of a magnetic field perpendicular to the propagation of the light allows one to determine the spin relaxation time T₁ and the electron lifetime τ in the conduction band. By tilting the magnetic field with respect to an estimate of the effective nuclear field acting on the electrons can be obtained.     

Direct observation of the electron spin relaxation induced by nuclei in quantum dots

We have studied the electron spin relaxation in semiconductor InAs/GaAs quantum dots by time-resolved optical spectroscopy. The average spin polarization of the electrons in an ensemble of p-doped quantum dots decays down to 1/3 of its initial value with a characteristic time T(Delta) approximately 500 ps, which is attributed to the hyperfine interaction with randomly oriented nuclear spins. We show that this efficient electron spin relaxation mechanism can be suppressed by an external magnetic field as small as 100 mT.     

Spin polarization of the neutral exciton in a single quantum dot

While efficient nuclear polarization has earlier been reported for the charged exciton in InAs/GaAs quantum dots at zero external magnetic field, we report here on a surprisingly high degree of circular polarization, up to ≈60%$\approx 60\%$, for the neutral exciton emission in individual InAs/GaAs dots. This high degree of polarization is explained in terms of the appearance of an effective nuclear magnetic field which stabilizes the electron spin. The nuclear polarization is manifested in experiments as a detectable Overhauser shift. In turn, the nuclei located inside the dot are exposed to an effective electron magnetic field, the Knight field. This nuclear polarization is understood as being due to the dynamical nuclear polarization by an electron localized in the QD. The high degree of polarization for the neutral exciton is also suggested to be due to separate in-time capture of electrons and holes into the QD.     

Die Rotation des Elektronenspins beim ebenen Tunnelprozeß mit überlagertem homogenem Magnetfeld

Measurements of the spin polarization of field emitted electrons from various ferromagnetic (Gd, Ni, Fe) and nonferromagnetic metals (W) show a steady increase of the angle? _s between momentum and electron spin with increasing external magnetic field (spin rotation). This effect is refered to the coupling between the magnetic moment of the electron and the strong electric field in the potential barrier at the emitter surface during the tunneling process. A formal application of the equation of spin motion derived by Bargmann, Michel and Telegdi for an electron moving in homogeneous electromagnetic fields delivers a quantitative agreement with the experimental results.     

Stabilization of the electron-nuclear spin orientation in quantum dots by the nuclear quadrupole interaction

The nuclear quadrupole interaction eliminates the restrictions imposed by hyperfine interaction on the spin coherence of an electron and nuclei in a quantum dot. The strain-induced nuclear quadrupole interaction suppresses the nuclear spin flip and makes possible the zero-field dynamic nuclear polarization in self-organized InP/InGaP quantum dots. The direction of the effective nuclear magnetic field is fixed in space, thus quenching the magnetic depolarization of the electron spin in the quantum dot. The quadrupole interaction suppresses the zero-field electron spin decoherence also for the case of nonpolarized nuclei. These results provide a new vision of the role of the nuclear quadrupole interaction in nanostructures: it elongates the spin memory of the electron-nuclear system.     

Gate control of dynamic nuclear polarization in GaAs quantum wells

Gate control of dynamic nuclear polarization under optical orientation is demonstrated in a Schottky-gated n-GaAs/AlGaAs (110) quantum well by time-resolved Kerr rotation measurements. Spin relaxation of electrons due to mechanisms other than the hyperfine interaction is effectively suppressed as the donor induced background electron density is reduced from metallic to insulating regimes. Subsequent accumulation of photoexcited electron spins dramatically enhances dynamic nuclear polarization at low magnetic field, allowing us to tune nuclear spin polarization by external gate voltages.     

Optical control of spin coherence in singly charged (In,Ga)As/GaAs quantum dots

Electron spin coherence has been generated optically in n-type modulation doped (In,Ga)As/GaAs quantum dots (QDs) which contain on average a single electron per dot. The coherence arises from resonant excitation of the QDs by circularly polarized laser pulses, creating a coherent superposition of an electron and a trion. Time dependent Faraday rotation is used to probe the spin precession of the optically oriented electrons about a transverse magnetic field. The coherence generation can be controlled by pulse intensity, being most efficient for (2n+1)pi pulses.     

Electron–Nuclear Spin Dynamics in Semiconductor QDs

This work presents an overview of investigations of the nuclear spin dynamics in nanostructures with negatively charged InGaAs/GaAs quantum dots characterized by strong quadrupole splitting of nuclear spin sublevels. The main method of the investigations is the experimental measurements and the theoretical analysis of the photoluminescence polarization as a function of the transverse magnetic field (effect Hanle). The dependence of the Hanle curve profile on the temporal protocol of optical excitation is examined. Experimental data are analyzed using an original approach based on separate consideration of behavior of the longitudinal and transverse components of the nuclear polarization. The rise and decay times of each component of the nuclear polarization and their dependence on transverse magnetic field strength are determined. To study the role of the Knight field in the dynamic of nuclear polarization, a weak additional magnetic field parallel to the optical axis is used. We have found that, only taking into account the nuclear spin fluctuations, we can accurately describe the measured Hanle curves and evaluate the parameters of the electron–nuclear spin system in the studied quantum dots. A new effect of the resonant optical pumping of nuclear spin polarization in an ensemble of the singly charged (In,Ga)As/GaAs quantum dots subjected to a transverse magnetic field is discussed. Nuclear spin resonances for all isotopes in the quantum dots are detected in that way. In particular, transitions between the states split off from the ±1/2 doublets by the nuclear quadrupole interaction are identified.     

Theoretical aspects of dynamic nuclear polarization in the solid state - the solid effect

Dynamic nuclear polarization has gained high popularity in recent years, due to advances in the experimental aspects of this methodology for increasing the NMR and MRI signals of relevant chemical and biological compounds. The DNP mechanism relies on the microwave (MW) irradiation induced polarization transfer from unpaired electrons to the nuclei in a sample. In this publication we present nuclear polarization enhancements of model systems in the solid state at high magnetic fields. These results were obtained by numerical calculations based on the spin density operator formalism. Here we restrict ourselves to samples with low electron concentrations, where the dipolar electron-electron interactions can be ignored. Thus the DNP enhancement of the polarizations of the nuclei close to the electrons is described by the Solid Effect mechanism. Our numerical results demonstrate the dependence of the polarization enhancement on the MW irradiation power and frequency, the hyperfine and nuclear dipole-dipole spin interactions, and the relaxation parameters of the system. The largest spin system considered in this study contains one electron and eight nuclei. In particular, we discuss the influence of the nuclear concentration and relaxation on the polarization of the core nuclei, which are coupled to an electron, and are responsible for the transfer of polarization to the bulk nuclei in the sample via spin diffusion.     

Spin polarization of two-dimensional electron system in different Laughlin states and around filling factor

The spin configuration of the ground state of a two-dimensional electron system is investigated for different FQHE states from an analysis of circular polarization of time-resolved luminescence. The method clearly distinguishes between fully spin polarized, partially spin polarized and spin unpolarized FQHE ground states. We demonstrate that FQHE states which are spin unpolarized or partially polarized at low magnetic fields become fully spin polarized at high fields. Temperature dependence of the spin polarization reveals a nonmonotonic behavior at . At and the electron system is found to be fully spin polarized. This result does not indicate the existence of any skyrmionic excitations in high magnetic field limit. However, at the observed spin depolarization of electron system at and becomes broader for lower magnetic fields, so that full spin polarization remains only in a small vicinity of . Such a behavior could be considered as a precursor of skirmionic depolarization, which would dominate for smaller ratios between Zeeman and Coulomb energies.We demonstrate that the spin polarization of 2D-electron system at and can be strongly affected by hyperfine interaction between electrons and optically spin-oriented nuclears. This result is due to the fact that hyperfine interaction can both enhance and suppress effective Zeeman splitting in fixed external magnetic field.     

Depolarization of the photoluminescence and spin relaxation in n-doped GaAs

Optically oriented electron spin lifetime in n-doped gallium arsenide was measured via depolarization of the photoluminescence (PL) in a transverse magnetic field (Hanle effect). In order to measure the PL polarization, a time-resolved pump-probe experiment, where a pump pulse generates spin-polarized electrons and a probe pulse monitors their polarization, was employed. The PL polarization in dependences of the pump-probe delay, external magnetic field as well as of the sample temperature was studied. The PL polarization was found to decay exponentially with the pump-probe delay, from which the spin lifetime of the electrons was measured. The measured value was found to depend on the strength of the magnetic field and sample temperature.     

Evolution of the theory of a “luminous” electron

A brief survey is presented here of studies contributing to the theory of synchrotron radiation and several quantum effects which accompany the motion of electrons in a magnetic field. Equations which describe the amplitude characteristics of radial and axial oscillations of an electron moving in a nonuniform magnetic field with a weak focus are derived on the basis of the quantum theory. The characteristics of electron spin are analyzed, with oscillations in a nonuniform field (spontaneous polarization) taken into account. Depolarizing spin resonances in accumulators are interpreted in terms of the quantum theory.     

Overhauser effect of 67Zn nuclear spins in ZnO via cross relaxation induced by the zero-point fluctuations of the phonon field

Hole burning in and displacements of the magnetic-resonance absorption line of the electron spin of the shallow hydrogen-related donor in ZnO are observed upon resonant irradiation with microwaves at 275 GHz and at 4.5 K in a magnetic field of 10 T. These effects arise from an almost complete polarization of the many 67Zn (I=5/2) nuclear spins that have an isotropic hyperfine interaction with the electron spin of the shallow donor. It is proposed that this huge dynamic nuclear polarization is caused by a spontaneous-emission-type cross relaxation in the coupled electron-spin nuclear-spin system induced by the zero-point fluctuations of the phonon field.     

Dynamic nuclear spin resonance in n-GaAs

The dynamics of optically detected nuclear magnetic resonance is studied in n-GaAs via time-resolved Kerr rotation using an on-chip microcoil for rf field generation. Both optically allowed and optically forbidden NMR are observed with a dynamics controlled by the interplay between dynamic nuclear polarization via hyperfine interaction with optically generated spin-polarized electrons and nuclear spin depolarization due to magnetic resonance absorption. Comparing the characteristic nuclear spin relaxation rate obtained in experiment with master equation simulations, the underlying nuclear spin depolarization mechanism for each resonance is extracted.     

Spin-dependent electron dynamics and recombination in GaAs<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>N<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> alloys at room temperature

Conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs_1−x N _x alloys with a small nitrogen content (x = 2.1, 2.7, and 3.4%) is studied both experimentally and theoretically. It is found that the photoluminescence circular polarization determined by the mean spin of free electrons reaches 40–45% and this giant value persists within 2 ns. Simultaneously, the total free-electron spin decays rapidly with the characteristic time ≈ 150 ps. The results are explained by spin-dependent capture of free conduction electrons on deep paramagnetic centers resulting in the dynamical polarization of bound electrons. A nonlinear theory of spin dynamics in the coupled system of spin-polarized free and localized carriers has been developed which describes the experimental dependencies, in particular, the electron spin quantum beats observed in a transverse magnetic field. The text was submitted by the authors in English.     

Ettingshausen effect around a Landau level filling factor nu = 3 studied by dynamic nuclear polarization

A spin current perpendicular to the electric current is investigated around a Landau level filling factor nu=3 in a GaAs/AlGaAs two-dimensional electron system. Measurements of dynamic nuclear polarization in the vicinity of the edge of a specially designed Hall bar sample indicate that the direction of the spin current with respect to the Hall electric field reverses its polarity at nu=3, where the dissipative current carried by holes in the spin up Landau level is replaced with that by electrons in the spin down Landau level.     

Microwave Spin Frequency Comb Memory Protocol Controlled by Gradient Magnetic Pulses

We have demonstrated a combination of frequency comb spin-echo protocol in a conventional microwave pulsed electron spin resonance spectrometer with gradient pulses of the external magnetic field applied for on-demand retrieval of signal microwave pulses at the required moments of time. A natural high-finesse periodic structure was used as a carrier of stored information. The structure is made out of hyperfine lines of electron spin resonance of tetracyanoethylene anion radicals in toluene at room temperature. Herein, we have also observed that using the pulses of gradient magnetic field can increase the memory capacity. The experimental results demonstrated promising opportunities for controlling electron nuclear spin coherence, which could be useful for implementation of broadband microwave or optical-microwave noise free quantum memory protocols.