Possibility of observing magnetic macroscopic quantum tunneling using a scanning tunneling microscope

A theory describing the detection of magnetic macroscopic quantum tunneling on the basis of current fluctuations in a scanning tunneling microscope is proposed. Zh. éksp. Teor. Fiz. 112, 1011–1020 (September 1997)     

Photon emission with the scanning tunneling microscope

By placing a photon detector near the tip-sample region of a scanning tunneling microscope, we have measured isochromat photon-emission spectra of polycrystalline tantalum and Si(111)7×7 at photon energies of 9.5 eV. Such spectra contain electronic-structure information comparable to inverse photoemission spectroscopy, but with high lateral/spatial resolution. The implications of this new observation are discussed.     

电子自旋共振扫描隧道显微镜

单电子自旋极有可能发展成为未来信息学的基础。以电子自旋为核心的新型单分子或单原子器件将最终成为基本信息单元,基于单电子的自旋态将有可能构筑未来量子计算机的量子比特。但是,如何实现对单个电子自旋及其相干态和纠缠态的测量和控制,目前仍然是一个很大的挑战。作为调控单个电子自旋的重要实验手段,电子自旋共振扫描隧道显微镜的发展一直备受关注。文章简要介绍了电子自旋共振扫描隧道显微镜的基本概念,阐述了其发展历史和最新进展,归纳了机理探索的研究成果,论述了该设备研发面临的挑战与对策,并对未来的发展和应用做了展望。     

Fluctuation dominated Josephson tunneling with a scanning tunneling microscope

We demonstrate Josephson tunneling in vacuum tunnel junctions formed between a superconducting scanning tunneling microscope tip and a Pb film, for junction resistances in the range 50-300 k Omega. We show that the superconducting phase dynamics is dominated by thermal fluctuations, and that the Josephson current appears as a peak centered at small finite voltage. In the presence of microwave fields ( f = 15.0 GHz) the peak decreases in magnitude and shifts to higher voltages with increasing rf power, in agreement with theory.     

Imaging of surface plasmon polariton interference using phase-sensitive photon scanning tunneling microscope

We report the surface plasmon polariton interference, generated via a ??buried?? gold grating, and imaged using a phase-sensitive Photon Scanning Tunneling Microscope?(PSTM). The phase-resolved PSTM measurement unravels the complex surface plasmon polariton interference fields at the gold-air interface.     

Room temperature supramolecular repositioning at molecular interfaces using a scanning tunneling microscope

Individual C₆₀ molecules adsorbed on a monolayer of 4,4′-dimethyl bianthrone first grown on Cu(111) have been repositioned at room temperature with the tip of a scanning tunneling microscope. The procedure can be applied to C₆₀ without disrupting the 4,4′-dimethyl bianthrone film. Controlled supramolecular repositioning at a molecular interface has allowed us to assemble lateral C₆₀ patterns that define a bimolecular C₆₀-4,4′-dimethyl bianthrone heterojunction on Cu(111).     

Heisenberg, uncertainty, and the scanning tunneling microscope

We show by a statistical analysis of high-resolution scanning tunneling microscopy (STM) experiments, that the interpretation of the density of electron charge as a statistical quantity leads to a conflict with the Heisenberg uncertainty principle. Given the precision in these experiments we find that the uncertainty principle would be violated by close to two orders of magnitude, if this interpretation were correct. We are thus forced to conclude that the density of electron charge is a physically real, i.e., in principle precisely measurable quantity.     

Electron stimulated desorption induced by the scanning tunneling microscope

The use of the scanning tunneling microscope (STM) as an excitation source and a probe of electron stimulated desorption on the atomic scale is reviewed. The case of H desorption from H-terminated Si(001) is examined in detail. Experimental results on excitation thresholds, desorption cross-sections, isotope effects and site-selectivities are presented. Evidence for mechanisms involving direct electronic and hot ground-state desorption, as well as a novel multiple-vibrational excitation mechanism is discussed. Using the latter mechanism, the ultimate resolution limit of selective single atom desorption is achieved. New results on desorption from Si dihydride, including a proposed mechanism for the STM-induced H/Si(001)-3 × 1 to 2 × 1 conversion, are presented. Possible applications of STM-induced desorption in nanofabrication are considered.     

Surface-state Stark shift in a scanning tunneling microscope

We report a quantitative low-temperature scanning tunneling spectroscopy (STS) study on the Ag(111) surface state over an unprecedented range of currents (50 pA to 6 microA) through which we can tune the electric field in the tunnel junction of the microscope. We show that in STS a sizable Stark effect causes a shift of the surface-state binding energy E0. Data taken are reproduced by a one-dimensional potential model calculation, and are found to yield a Stark-free energy E0 in agreement with recent state-of-the-art photoemission spectroscopy measurements.     

Single quantum dots as scanning tunneling microscope tips

We report the use of single quantum dot structures as tips on a scanning tunneling microscope (STM). A single quantum dot structure with a diameter of less than 200 nm and a height of 2 μm was fabricated by reactive ion etching. This dot was placed on a 40 μm-high mesa and mounted on the tip of a STM. The topography of large structures such as quantum wires or gold test substrates is clearly resolved with such a tip. To check the transport properties of the tip, quantum dot arrays were fabricated on resonant tunneling double barrier structures using the same process parameters. Conventional tunneling spectroscopy clearly resolved the 0D states in our samples. Using a metal substrate as second electrode such STM tips can be used to perform high resolution energy spectroscopy on single dots and free standing wire structures.