Spin reorientation transition in (111) textured L10 CoPt layers

In this work, a spin reorientation transition from [001] axis to an in-plane direction occurs near Curie temperature under a small external field for (111) textured L1₀ CoPt layers in an AlN/CoPt multilayer film, indicating the dominant role of the shape anisotropy at elevated temperatures over the magnetocrystalline anisotropy. A large in-plane residual magnetization is also observed after cooling the sample from a temperature above the Curie point. The formation of magnetization during cooling is considered due to the alignment of magnetic moments along the easy axis by the small field in the spin reorientation transition temperature region. Our work reveals the importance of shape anisotropy for the formation of magnetization in the heat assisted magnetic recording process.     

Magnetic stripe domains in coupled magnetic sandwiches

Magnetic stripe domains in the spin reorientation transition region are investigated in (Fe/Ni)/Cu(001) and Co/Cu/(Fe/Ni)/Cu(001) using photoemission electron microscopy. For (Fe/Ni)/Cu(001), the stripe domain width decreases exponentially as the Fe/Ni film approaches the spin reorientation transition point. For Co/Cu/(Fe/Ni)/Cu(001), the Fe/Ni stripe orientation is aligned with the Co in-plane magnetization, and the stripe domain width decreases exponentially with increasing the interlayer coupling between the Fe/Ni and Co films. By considering magnetic stripes within an in-plane magnetic field, we reveal a universal dependence of the stripe domain width on the magnetic anisotropy and on the interlayer coupling.     

自旋转向相变中的条纹磁畴研究

用光激发电子显微镜研究了Fe／Ni铁磁膜和Co／Cu／Fe／Ni磁耦合膜中的条纹磁畴．实验发现：在Fe／Ni体系中，条纹磁畴宽度随着铁层厚度趋近于自旋转向相变点呈指数下降；在Co／Cu／Fe／Ni体系中，Fe／M层中的条纹磁畴会沿着钴层磁矩的方向排列，其磁畴宽度会随着Co-Fe／Ni间的层间耦合强度呈指数下降．理论上推导出条纹磁畴随着磁各向异性能和层间耦合强度变化的统一公式，而实验结果与理论符合得非常好。     

Imaging the cone state of the spin reorientation transition

The magnetization behavior and the domain pattern in remanence are studied in Co/Pt multilayers. The reorientation of magnetization from perpendicular to in plane is found to happen via the state of canted magnetization. In the transition from an easy axis to an easy plane a stable domain pattern in the in-plane magnetization components is found for Co/Pt multilayers. The analysis of the domain pattern reveals that the magnetization canting is such that all in-plane orientations of magnetization are equally occupied. The found structure is appointed to the cone state.     

Large planar Hall effect in perpendicularly magnetized W/CoFeB/MgO structures

The planar Hall effect (PHE) in W/CoFeB/MgO structure with perpendicular magnetic anisotropy was investigated as a function of CoFeB thickness (t_CoFeB). The PHE is measured by sweeping the in-plane magnetic field at various azimuthal angles as well as by rotating strong magnetic field which is enough to saturate the magnetization. We observed a huge PHE in the W/CoFeB/MgO sample, which is even larger than anomalous Hall effect (AHE). This is distinct from the results in Ta/CoFeB/MgO samples showing a much smaller PHE than AHE. Since the PHE is insensitive to the t_CoFeB while the AHE is proportional to the t_CoFeB, the unprecedented PHE can be attributed to the W layer with a large spin-orbit coupling.     

Field induced spin reorientation transition in epitaxial La0.5Sr0.5CoO3 films

Strained epitaxial La_0.5Sr_0.5CoO₃ films are grown on LaAlO₃ substrate. Structural, electrical, and magnetic measurements were carried out. Out of plane lattice parameter of the film undergoes compressive strain and the coercivity is enhanced. The zero field cooled (ZFC) magnetization curve for a field applied parallel to the film plane shows a jump, which suggests a spin reorientation transition (SRT), while ZFC magnetization for a field applied perpendicular to the film plane is featureless. This jump in magnetization is shifted to higher temperatures when the magnetic field is reduced. The SRT is attributed to the strain in the film.     

Sm2(TM)17合金的磁性(自旋再取向相变)研究

本文研究了Sm₂(FeNiCoM)₁₇合金(M为非磁性组元)的磁性。样品由六角结构无序型的2∶17主相及少量FeNi合金杂相组成。在六角结构的e轴方向(易磁化方向)观察到下述异常现象:低温(273K以下)时的磁化及反磁化曲线发生明显的跃变,跃变时相应的磁场H_r随温度下降而增大;磁滞迴线是蜂腰型的,温度愈低蜂腰愈明显;升温时磁化强度随温度变化(1.5K至居里点T_C)的曲线上出现极大值,其相应的温度T_t随磁场增大而降低;降温时观察到了热磁滞后现象。但在基面(难磁化方向)上及Co含量增多(>18at％)时,样品却表现了正常的铁磁行为。本文提出用磁矩非共线结构排列的自旋再取向相变来解释上述异常现象,并给出自旋倒向所需越过的能垒高度U=9.2×10^-15erg,用设想磁结构的模型得到的磁化强度的计算值与实验值也符合得较好。 关键词：     

Magnetic properties of (NdxY1-x)Co2(1⩾ x ⩾ 0)

The concentration dependence of T_c and T_R (T_c magnetic ordering temperature, T_R spin reorientation temperature) of the pseudobinary system (Nd, Y)Co₂ is reported. Furthermore the influence of an external magnetic field on the spin reorientation and the magnetization is studied. The observed variation of the magnetization in the vicinity of the spin reorientation is compared with theoretical results. For the calculation a Hamiltonian with terms describing a molecular field, a cubic crystal field, and an external field is used.     

Noncollinear spin reorientation transition in S?=?1 ferromagnetic thin films

An in-plane spin reorientation transition in thin ferromagnetic films is discussed in terms of the thermodynamics of inhomogeneous low-dimensional systems based on a Néel sublattices concept while using a spin 1 Heisenberg Hamiltonian. The model allows us to investigate in a straightforward manner the layer-dependent phenomena. In this context, we propose a model of noncollinear magnetization structure based on the appropriate distribution of the anisotropy parameters inside the Fe films on W(110). The spin reorientation transition originates at the Fe/W(110) interface and proceeds via noncollinear magnetization structure toward the surface with increasing film thickness in accordance with the experimental findings. The temperature-driven spin reorientation transition in freestanding Fe films and in Fe/W(110) systems is also discussed in detail.     

Reorientation,multidomain states and domain walls in diluted magnetic semiconductors

The competition between surface/interface and intrinsic anisotropies yields a number of specific reorientation effects and strongly influences magnetization processes in diluted magnetic semiconductors as (Ga,Mn)As and (In,Mn)As. We develop a phenomenological theory to describe reorientation transitions and the accompanying multidomain states applicable to layers of these magnetic semiconductors. It is shown that the magnetic phase diagrams of such systems include a region of four-phase domain structure with four adjoining areas of two-phase domains as well as several regions with coexisting metastable states. We demonstrate that the parameters of isolated domain walls in (Ga,Mn)As nanolayers are extremely sensitive to applied magnetic field and can vary in a broad range. This can be used in microdevices of magnetic semiconductors with pinned domain walls. For (Ga,Mn)As epilayers with perpendicular anisotropy the geometrical parameters of domains have been calculated.     

First order reorientation in HoAl2

Accurate torque experiments have clearly shown that the reorientation of the magnetization observed in HoAl₂ near 20 K is a first order transition. A hysteresis of almost 2 K is observed.     

Planar Hall effect in electrodeposited CoCu/Cu multilayer

Electrodeposited CoCu/Cu multilayers were investigated by measuring both anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) simultaneously. Studies have been carried out on a [Co(3 nm)/Cu(4 nm)]₅₀ multilayer sample, where a maximum of ?8.8 % GMR was observed at room temperature. A direct comparison of AMR and PHE output has been made both as a function of field and its relative orientation with respect to the current. Marked changes in PHE loops were observed at different angles (between magnetic field and applied current) whereas no noticeable changes could be found for AMR results. Such PHE outputs are the manifestations of complex spin reorganization due to strong antiferromagnetic-coupling between adjacent magnetic layers. In case of angular dependence output, when the applied field is less than the coercive field, the PHE output shows a deviation from the Sin2θ dependence that can be correlated to the domain wall propagation.     

GdFeCo/AlN/TbFeCo薄膜的变温磁化性能研究

用磁控溅射法制备了GdFeCo/AlN/TbFeCo静磁耦合多层薄膜。振动样品磁强计和克尔磁滞回线测试装置的测试结果表明 :2 5℃不加外磁场时GdFeCo/AlN/TbFeCo静磁耦合多层薄膜读出层 (GdFeCo)的极向克尔角为零 ,读出层呈平面磁化 ;12 5℃不加外场时读出层的克尔角最大 (0 .5 4°) ,读出层的磁化方向为垂直磁化 ;随着温度增高 ,读出层由平面磁化转变为垂直磁化 ,在 75℃到 12 5℃温度范围内读出层磁化方向很快从平面磁化转变为垂直磁化。对磁化过程的机理研究表明 :饱和磁化强度和有效各向异性常量影响读出层磁化方向的转变过程 ,但主要受读出层饱和磁化强度的影响 ;在较高温度时读出层的磁化强度较小 ,退磁场能较小 ,在静磁耦合作用下 ,使GdFeCo读出层的磁化方向发生转变。制备的GdFeCo/AlN/TbFeCo静磁耦合多层薄膜适合作CAD MSR记录介质     

Dynamics of sandwich domain structure in Co-based amorphous ribbons with helical magnetic anisotropy: Part I

The distribution of axes of easy magnetization close to a homogeneous distribution is revealed in each half-thickness of a ribbon after annealing it in a helical magnetic field. The transition from magnetic reversal of a ribbon by the displacement of two domain walls formed near a middle plane of a ribbon to magnetic reversal of a ribbon by displacement of two domain walls formed near to the main surfaces of a ribbon is found out during each half-period of a magnetic reversal.     

T=0 phase diagram and nature of domains in ultrathin ferromagnetic films with perpendicular anisotropy

We present the complete zero temperature phase diagram of a model for ultrathin films with perpendicular anisotropy. The whole parameter space of relevant coupling constants is studied in first order anisotropy approximation. Because the ground state is known to be formed by perpendicular stripes separated by Bloch walls, a standard variational approach is used, complemented with specially designed Monte Carlo simulations. We can distinguish four regimes according to the different nature of striped domains: a high anisotropy Ising regime with sharp domain walls, a saturated stripe regime with thicker walls inside which an in-plane component of the magnetization develops, a narrow canted-like regime, characterized by a sinusoidal variation of both the in-plane and the out of plane magnetization components, which upon further decrease of the anisotropy leads to an in-plane ferromagnetic state via a spin reorientation transition (SRT). The nature of domains and walls are described in some detail together with the variation of domain width with anisotropy, for any value of exchange and dipolar interactions. Our results, although strictly valid at T=0, can be valuable for interpreting data on the evolution of domain width at finite temperature, a still largely open problem.     

A new type of temperature driven reorientation transition in magnetic thin films

We present a new type of temperature driven spin reorientation transition (SRT) in thin films. It can occur when the lattice and the shape anisotropy favor different easy directions of the magnetization. Due to different temperature dependencies of the two contributions the effective anisotropy may change its sign and thus the direction of the magnetization as a function of temperature may change. Contrary to the well-known reorientation transition caused by competing surface and bulk anisotropy contributions the reorientation that we discuss is also found in film systems with a uniform lattice anisotropy. The results of our theoretical model study may have experimental relevance for film systems with positive lattice anisotropy, as e.g. thin iron films grown on copper.     

Observation of magnetic ripple and nanowidth domains in a layered ferromagnet

We investigated ferromagnetic domain structures on nanometer to micrometer scale for single crystals of a layered ferromagnet, La(2-2x)Sr(1+2x)Mn2O7 (0.32 < or = x < or = 0.40), as functions of x and temperature by means of Lorentz electron microscopy. We have succeeded in observing the evolution of magnetic ripple structure, dynamically, related to a spin reorientation transition where the magnetization direction switches between parallel and perpendicular to the layers. Our high-resolution magnetic domain imaging revealed that the ripple state is characterized by the evolution of magnetic nanowidth domains.     

Properties of amorphous CoZr(RE) (RE=Gd,Sm, Dy) films with various uniaxial anisotropies,prepared by a new process

If a DC magnetic field is applied parallel to the plane of amorphous CoZr(RE) thin films during sputter depositing, a uniaxial anisotropy is formed the direction of which depends upon the choice of RE substituted and its concentration. When RE=Gd a perpendicular anisotropy K_p forms over a large concentration range, a spin reorientation process being at the origin of the process. A well-defined K_p is developed also in CoFeZrGd and CoZrGdSm films. CoZrGdDy films exhibit simultaneously a perpendicular and an in-plane uniaxial anisotropy. The related magnetization process and domain structures are quite peculiar.     

Temperature-driven spin reorientation transitionof magnetron sputtered nickel thin film

The temperature-driven spin reorientation transition of magnetron sputtered Ni/Si （111） systems has been studied. The relationship between ac initial susceptibility and temperature of nickel films with different thicknesses shows that the magnetization orientation changes from in-plane to out-of-plane with the increase of temperature. The temperature dependence of mugnetoelastic, magneto-crystalline, and magnetostatic anisotropies determines the direction of the reorientation transition. The temperature-driven spin reorientation transition is supported by Hall coefficient measurements which show that its temperature dependence is similar to that of susceptibility.     

Domain-wall mechanism of nucleation in a magnetic structural phase transition in La<Subscript>2</Subscript>CuO<Subscript>4</Subscript>

The structure of domain walls and new-phase nucleation are investigated in a four-sublattice antiferromagnet (AFM) of the La₂CuO₄ type placed in a magnetic field which initiates an AFM-weak-ferromagnet (WFM) magnetic structural phase transition. The critical fields for nucleus growth are found in the case of two types of domain walls present. The magnetization curve is calculated and a two-step mechanism is proposed for the AFM-WFM phase transition observed in La₂CuO₄.