YbRh2Si2: spin fluctuations in the vicinity of a quantum critical point at low magnetic field

We report a 29Si NMR study on aligned single crystals of YbRh2Si2 which shows behavior characteristic of a quantum critical point (QCP: T(N)-->0). The Knight shift K and the nuclear spin-lattice relaxation rate 1/T(1) of Si show a strong dependence on the external field H, especially below 5 kOe. At the lowest H used in this measurement (H approximately 1.5 kOe), it was found that 1/T(1)T continues to increase down to 50 mK, whereas K stays constant with a large magnitude below 200 mK. This result strongly suggests the development of antiferromagnetic fluctuations with finite q vectors that compete with q=0 spin fluctuations in the vicinity of the QCP near H=0.5 kOe.     

Fabrication of high growth rate solar-cell-quality μc-Si:H thin films by VHF-PECVD

Several series of Si:H films were fabricated by the very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at different substrate temperatures (T_s) and silane concentration (SC=[SiH_4]/[SiH_4+H_2]%). The results of Raman spectroscopy showed structural evolution of the Si:H films with the variation of T_s and SC. The results of x-ray diffraction (XRD) measurements indicated that T_s also influences the crystal orientation of the Si:H films. The modulation effect of T_s on crystalline volume fraction (X_c) is more evident for the high SC, which shows different trend compared to low SC. In addition, the growth rate of the films also showed a regular change with the variation of SC and T_s. Different samples in the series showed a similar increase in dark conductivity and a decrease in photosensitivity with increasing T_s and decreasing SC. Device-quality microcrystalline silicon materials were deposited at a high growth rate, characterized by relatively low dark conductivity and relatively high photosensitivity in a certain crystalline range. The microcrystalline silicon solar cell with a conversion efficiency of 4.55% has been prepared by VHF-PECVD.     

Coverage- and temperature-dependent vibrational spectra of hydrogen chemisorbed on Si(100)2 × 1

The adsorption of atomic hydrogen at Si(100)2 × 1 has been studied for coverages at and below one monolayer at temperatures between 300 and 1200 K using high-resolution Electron Energy Loss Spectroscopy (EELS) and Low Energy Electron Diffraction (LEED). Measurements of EELS frequencies, linewidths and intensities are discussed for different coverages and temperatures during exposure as well as subsequent annealing. Formation of a monohydride Si(100)2 × 1 : H adsorption phase is observed at room temperature in the sub-monolayer range, at 650 K for all coverages up to the saturation, and during thermal decomposition of the low temperature dihydride Si(100)1 × 1 : : 2H adsorption phase. The latter is formed by saturating Si(100) at 300 K with atomic hydrogen.     

Electron spin resonance in the spin-1/2 quasi-one-dimensional antiferromagnet with Dzyaloshinskii-Moriya interaction BaCu2Ge2O7

We have investigated the electron spin resonance (ESR) on single crystals of BaCu2Ge2O7 at temperatures between 300 and 2 K and in a large frequency band, 9.6-134 GHz, in order to test the predictions of a recent theory, proposed by Oshikawa and Affleck (OA) [Phys. Rev. Lett. 82, 5136 (1999)]], which describes the ESR in a spin-1/2 Heisenberg chain with the Dzyaloshinskii-Moriya interaction. We find, in particular, that the ESR linewidth, Delta H, displays a rich temperature behavior. As the temperature decreases from T(max)/2 approximately 170 to 50 K, Delta H shows a rapid and linear decrease, Delta H approximately T. At low temperatures, below 50 K, Delta H acquires a strong dependence on the magnetic field orientation and for H axially c it shows a (h/T)(2) behavior which is due to an induced staggered field h, according to OA's prediction.     

Heavy fermion superconductivity and magnetic order in noncentrosymmetric CePt3Si

CePt3Si is a novel heavy fermion superconductor, crystallizing in the CePt3B structure as a tetragonally distorted low symmetry variant of the AuCu3 structure type. CePt3Si exhibits antiferromagnetic order at T(N) approximately 2.2 K and enters into a heavy fermion superconducting state at T(c) approximately 0.75 K. Large values of H(')(c2) approximately -8.5 T/K and H(c2)(0) approximately 5 T refer to heavy quasiparticles forming Cooper pairs. Hitherto, CePt3Si is the first heavy fermion superconductor without a center of symmetry.     

硅BC8量子点太阳能电池中的多重激子效应

多重激子效应是指在纳米半导体晶体中,量子点吸收一个高能光子而产生多个电子-空穴对的过程,该效应可以提高单结太阳电池能量转换效率。利用碰撞电离机制和费米统计模型计算了工作温度300 K的单结硅BC8量子点太阳能电池在AM1.5G太阳光谱下的能量转换效率。对于波长在280~580 nm的入射光,多重激子效应可以大幅增强硅BC8量子点直径d>5.0 nm的量子点太阳电池的能量转换效率。硅纳米量子点的直径d=6.3~6.4 nm时,最大能量转换效率为51.6%。     

Structure-dependent vibrational lifetimes of hydrogen in silicon

The lifetimes of the Si-H vibrational stretch modes of the H(*)(2) ( 2062 cm(-1)) and HV.VH((110)) ( 2072.5 cm(-1)) defects in crystalline Si are measured directly by transient bleaching spectroscopy from 10 K to room temperature. The interstitial-type defect H(*)(2) has a lifetime of 4.2 ps at 10 K, whereas the lifetime of the vacancy-type complex HV.VH((110)) is 2 orders of magnitude longer, 295 ps. The temperature dependence of the lifetime of H(*)(2) is governed by TA phonons, while HV.VH((110)) is governed by LA phonons. This behavior is attributed to the distinctly different local structure of these defects and the accompanying local vibrational modes.     

Delocalized quasiparticles in the vortex state of an overdoped high-T(c) superconductor probed by 63Cu NMR

We report the spin Knight shift (K(s)) and the nuclear spin-lattice relaxation rate (1/T1) in the vortex state as a function of magnetic field (H) up to 28 T in the high-Tc superconductor TlSr2CaCu2O6.8 (Tc = 68 K). At low temperatures well below Tc, both K(s) and 1/T1 measured around the middle point between the two nearest vortices (saddle point) increase substantially with increasing field, which indicate that the quasiparticle states with an ungapped spectrum are extended outside the vortex cores in a d-wave superconductor. The density of states (DOS) around the saddle point is found to be kappaN(0)square root[H/H(c2)], with kappa = 0.5-0.7 and N0 being the normal-state DOS.     

Modification by H-termination in growth process of titanium silicide on Si(0 0 1)-2 × 1 observed with scanning tunneling microscopy

Formation processes of titanium silicide on hydrogen-terminated H/Si(0 0 1)-2 × 1 surface are studied at the atomic scale with a scanning tunneling microscopy (STM). Square-shaped nanoislands were observed on the Ti/H/Si(0 0 1) surface after annealed at 873-1073 K. These are the epitaxial nanoislands moderately grown due to the local orientation relationship between C49-TiSi₂ and Si(0 0 1), because passivation by surface hydrogen on Si(0 0 1) suppresses active and complex bond formation of Ti-Si.     

Influence of temperature-pressure treatment on heavily hydrogenated silicon surface

Microstructure and related properties of hydrogenated silicon samples, Si:H, treated at high-temperature (HT) up to 1270 K under hydrostatic argon pressure (HP) up to 1.1 GPa are investigated. To prepare Si:H, Czochralski grown 0 0 1 oriented single crystalline Si wafer with 50 nm thick surface SiO₂ layer was heavily implanted with hydrogen using the immersion plasma source of hydrogen ions with energy 24 keV.The surface of HT-HP treated Si:H was characterised by scanning electron microscopy. Reflectivity pattern measurements in the wavelength range of 350-2000 nm have been performed to analyse their surface and bulk properties. The volume averaging method for a model of layer-like structure has been used to simulate the HT-HP treated Si:H. The analysis of Si:H samples suggests the multi-layer structure composed of Si, Si:H, SiO, SiO₂, and of porous Si layers in the sub-surface region. The porous Si:H samples model is in good consistency with experimental data from reflectance measurements.     

Amorphous SiC film formation on Si(100) using electron beam excitation

The effect of electron impact on methylsilane (CH₃SiH₃) conversion to amorphous-Si_0.5C_0.5:H (a-Si_0.5C_0.5:H) films on Si(100) has been studied by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), temperature-programmed desorption (TPD), and low energy electron diffraction (LEED). It is found that electron impact greatly enhances CH₃SiH₃ decomposition on Si(100) at both 90 K and 300 K, resulting in a-Si_0.5C_0.5:H thin film formation. Thermal annealing of the film causes hydrogen desorption and amorphous silicon carbide (a-SiC) formation. Upon annealing to temperatures above 1200 K, the a-SiC film became covered by a thin silicon layer as indicated by AES studies. Ordered structures are not produced by annealing the a-SiC up to 1300 K.     

Transport and optical properties of amorphous carbon and hydrogenated amorphous carbon films

In this paper we report on the electrical and optical properties of amorphous carbon (a-C) and hydrogenated amorphous carbon (a-C:H) films. Resistivity of both types of films decreases with increase in temperature. At lower temperatures (60-250 K) the electron transport is due to variable range hopping for the a-C films. At higher temperatures (300-430 K) it is thermally activated for both types of films. Analysis of the heterojunction between diamond-like carbon (DLC) and bulk silicon (Si) leads to the conclusion that our a-C films are of n-type and our a-C:H films are of p-type. The optical measurements with DLC revealed a Tauc bandgap of 0.6 eV for the a-C films and 1-1.2 eV for the a-C:H films. An Urbach energy around 170 meV could be determined for the a-C:H films. Strain versus resistance plots were measured resulting in piezoresistive gauge factors around 50 for the a-C films and in between 100 and 1200 for the a-C:H films.     

Key to understanding interstitial H2 in Si

A new IR absorption line at 3191.1 cm(-1) has been discovered for the interstitial HD molecule in Si. This new line appears for sample temperatures above approximately 20 K and lies 73.9 cm(-1) below the 3265.0 cm(-1) line previously observed for HD. We attribute the 73.9 cm(-1) energy difference to the rotation of the interstitial HD molecule. The selection rules associated with these two lines are consistent with the puzzling absence of an ortho-para splitting in the IR absorption spectra of H2 and D2 in Si.     

Electron stimulated desorption induced by the scanning tunneling microscope

The use of the scanning tunneling microscope (STM) as an excitation source and a probe of electron stimulated desorption on the atomic scale is reviewed. The case of H desorption from H-terminated Si(001) is examined in detail. Experimental results on excitation thresholds, desorption cross-sections, isotope effects and site-selectivities are presented. Evidence for mechanisms involving direct electronic and hot ground-state desorption, as well as a novel multiple-vibrational excitation mechanism is discussed. Using the latter mechanism, the ultimate resolution limit of selective single atom desorption is achieved. New results on desorption from Si dihydride, including a proposed mechanism for the STM-induced H/Si(001)-3 × 1 to 2 × 1 conversion, are presented. Possible applications of STM-induced desorption in nanofabrication are considered.     

Solar cell performance improvement via photoluminescence conversion of Si nanoparticles

Photoluminescence (PL) conversion of Si nanoparticles by absorbing ultraviolet (UV) lights and emitting visible ones has been used to improve the efficiency of crystalline Si solar cells. Si nanoparticle thin films are prepared by pulverizing porous Si in ethanol and then mixing the suspension with a SiO2 sol-gel (SOG).This SOG is spin-deposited onto the surface of the Si solar cells and dries in air. The short-circuit current as a function of Si nanoparticle concentration is investigated under UV illumination. The maximal increase is found at a Si concentration of 0.1 mg/mL. At such concentration and under the irradiation of an AM0 solar simulator, the photoelectric conversion efficiency of the crystalline Si solar cell is relatively increased by 2.16% because of the PL conversion.     

常压辉光等离子体催化CH_4转化制C_2烃在线诊断研究

利用发射光谱原位技术对旋转电极辉光等离子体作用下CH4-H2转化反应进行诊断研究,在300~700 nm波长范围内检测到了C,CH,C2,H和H2等激发态物种的发射谱线。利用H原子发射光谱,通过Boltzmann图解法计算了等离子体的激发温度,该激发温度在6 300~6 600 K之间。同时由谱线展宽计算了电子密度,其数量级在1020m-3。     

稀氢氟酸中硅表面氢终端的原位拉曼光谱研究

本文用共焦显微拉曼系统原位观察了Ｓｉ（１００）表面氢终端原子在稀氢氟酸中的变化过程。研究表明：在硅片浸入氢氟酸溶液的初期,表面主要被硅和三个氢原子的结合体（Ｓｉ Ｈ３）以及硅和两个氢原子的结合体（Ｓｉ Ｈ２）所覆盖。随着腐蚀过程的延长,Ｓｉ Ｈ３越来越少,Ｓｉ Ｈ２的信号不断增强,并且,硅和单个氢原子的结合体（Ｓｉ Ｈ）的信号也开始出现。最终,硅表面主要被Ｓｉ Ｈ２所覆盖,有少量Ｓｉ Ｈ３和Ｓｉ Ｈ键。本文还表明,拉曼光谱用来原位观察半导体材料表面终端原子键在溶液中的变化是很有用的工具     

Defect-related light emission from processed He-implanted silicon

Photoluminescence (PL) from He⁺-implanted Si (Si:He, He⁺ dose—2×10¹⁶ cm⁻², at 150 keV) is related to its microstructure; it has been tuned by processing at 720-1400 K under hydrostatic Ar pressure (HP, up to 1.2 GPa). Processing of Si:He at 720 K for 10 h results in an appearance of the D2 and D3 dislocation-related PL lines, these last of the highest intensity. Only the D1 dislocation-related line of intensity increasing with HP has been detected after processing at 920-1070 K. The D1 (of the highest intensity), D2 and D3 PL lines are observed after the treatment at 1270 K. No dislocation-related PL has been detected for Si:He processed at 1400 K. The treatment of Si:He at 720-1270 K under HP makes it possible to produce Si:He of specific microstructure resulting in strong PL at 0.81, 0.87 or 0.94 eV.     

Carbon dioxide-activated carbons from almond tree pruning: Preparation and characterization

Activated carbons were prepared from almond tree pruning by non-catalytic and catalytic gasification with carbon dioxide and their surface characteristics were investigated. In both series a two-stage activation procedure (pyrolysis at 800 °C in nitrogen atmosphere, followed by carbon dioxide activation) was used for the production of activated samples. In non-catalytic gasification, the effect of the temperature (650-800 °C for 1 h) and the reaction time (1-12 h at 650 °C) on the surface characteristics of the prepared samples was investigated. Carbons were characterized by means of nitrogen adsorption isotherms at 77 K. The textural parameters of the carbons present a linear relation with the conversion degree until a value of approximately 40%, when they come independent from both parameters studied. The highest surface area obtained for this series was 840 m² g⁻¹. In the catalytic gasification the effect of the addition of one catalyst (K and Co) and the gasification time (2-4 h) on the surface and porosity development of the carbons was also studied. At the same conditions, Co leads to higher conversion values than K but this last gives a better porosity development.     

Magnetic structure of the ferromagnetic new ternary silicide Nd5CoSi2

Nd(5)CoSi(2) was obtained from the elements by arc-melting followed by annealing at 883 K. Its investigation by single-crystal x-ray and neutron powder diffraction shows that this ternary silicide crystallizes as Nd(5)Si(3) in a tetragonal structure deriving from the Cr(5)B(3)-type (I4/mcm space group; a = 7.7472(2) and c = 13.5981(5) ? as unit cell parameters). The structural refinements confirm the mixed occupancy on the 8h site between Si and Co atoms, as already observed for Gd(5)CoSi(2). Magnetization and specific heat measurements reveal a ferromagnetic behavior below T(C) = 55 K for Nd(5)CoSi(2). This magnetic ordering is further evidenced by neutron powder diffraction investigation revealing between 1.8 K and T(C) a canted ferromagnetic structure in the direction of the c-axis described by a propagation vector k = (0 0 0). At 1.8 K, the two Nd(3+) ions carry ordered magnetic moments equal respectively to 1.67(7) and 2.37(7) μ(B) for Nd1 and Nd2; these two moments exhibit a canting angle of θ = 4.3(6)°. This magnetic structure presents some similarities with that reported for Nd(5)Si(3).