An improved method and experimental results of noise used as reliability estimation for semiconductor lasers

The low-frequency noise is a sensitive non-destructive indicator of semiconductor devices reliability. In this paper, the noises in InGaAsP/InGaAs/GaAlAs double quantum well semiconductor laser diodes (LDs) are measured, and the correlation between the noise and device reliability is studied. The insults indicate that the noise level in the LDs operating in low bias current is very important for estimating device reliability. So when noise is used as reliability indicator, the noise levels in LDs operating in both low and higher bias current should be considered, which improves the validity of reliability estimation.     

Current fluctuations in polystyrene nano-compounds

The current fluctuations in a polystyrene matrix (PS) doped by gold nanoparticles (Au-NPs) and small conjugated molecules of 8-hydroxyquinoline (8HQ) have been characterized. The electrical properties of the PS composite allow using it as a responsive layer in non-volatile memory devices due to its switching capability between two well separated conducting states. The analysis of current fluctuations at fixed bias voltages showed the presence of two states in charge carrier transport regardless of the operating conducting state of the device. Moreover, noise spectra have been investigated in the low frequency region, allowing the estimation of charge relaxation times between current levels in the two memory states. The presence of these slow and large fluctuations can seriously affect the final electrical performances of this class of nanostructured memories.     

小波变换用于半导体激光器噪音信号分析

利用小波变换的多尺度分析原理,对半导体激光器低频噪音信号进行小波分解.分析了不同器件噪音在小波分解后的概貌信息的差异性,并与器件性能进行了比较.结果表明：好器件噪音的低频概貌信号比较平稳,而坏器件噪音的低频概貌信号则有较大起伏;有的器件在老化前后的性能差异甚小,但老化前后噪音信号的低频概貌有较大差异;小波分解后的概貌信息,具有更多的可靠性细节信息,对器件性能的改变更敏感.     

Parametric analysis for a millimeter wave low noise high electron mobility transistor

This paper presents parametric analysis for low noise High Electron Mobility Transistor (HEMT) devices suitable for mm-wave radar, satellite communication, and radiometric applications. Preliminary computations reveal that pseudomorphic HEMT devices using InGaAs/GaAs heterojunction structures offer significant improvements in power added efficiency, noise figure, gain, reliability, and input power requirements compared to standard HEMT's. A Pseudomorphic HEMT device is capable of providing a room temperature noise fiqure of 3.5dB and small signal gain of 3dB at 95 GHz, approximately.     

氮化镓基蓝光发光二极管伽马辐照的1/f噪声表征

通过电离辐照对氮化镓基蓝光发光二极管器件有源区光/暗电流产生机制的研究, 建立了电离辐照减小发光二极管有效输出功率电学模型.通过电离辐照对氮化镓基蓝光发光 二极管器件有源区1/f噪声影响机制的研究, 建立了电离辐照增大发光二极管1/f噪声的相关性模型.在I < 1 μA 的小注入区,空间电荷区的复合电流随辐照剂量的增加而增加. 同时, 随着电离辐照产生缺陷的增加, 1/f噪声幅度增大. 在 I> 1 mA 的大注入条件下, 由于串联电阻的影响占主导地位,表面复合速率和电流随辐照剂量的增加而增加.同时, 随着电离辐照产生缺陷的增加, 1/f噪声幅度增大.根据辐照前后电流电压试验结果噪声测试结论, 证实了实验结论与理论推导结果的一致性. 在1 μA < I < 5×10^-5 A 的中值电流情况下, 由于高能载流子散射相关的迁移率涨落与辐照新增缺陷引起的载流子数涨落竞争机制, 随着辐照剂量增大, 1/f噪声在频域变化没有明显规律. 但是, 通过1/f噪声时域多尺度熵复杂度分析方法, 得出随着辐照剂量增大, 1/f噪声时域多尺度熵复杂度的结果. 最终证实1/f噪声幅度可以敏感地反映小注入和大注入情况下氮化镓基蓝光发光二极管电离辐照的可靠性. 噪声幅值越大, 则说明辐照感应N_it越高, 暗电流相关的复合电流越大, 光电流相关的扩散电流比例减少, 使得器件发光效率、光输出功率等性能参数下降, 继而影响器件可靠性, 造成失效率显著增大. 1/f噪声时域多尺度熵复杂度可以敏感地反映中值电流情况下氮 化镓基蓝光发光二极管的电离辐照可靠性.多尺度熵复杂度越大, 则说明辐照感应越多, 复合电流越大,器件可靠性越差.本文结论提供了一种基于 1/f噪声的氮化镓基蓝光发光二极管电离辐照可靠性表征方法. 关键词： f噪声')" href="#">1/f噪声 电离辐照 氮化镓基蓝光发光二极管     

Invited Review: Superlattice and multiquantum well avalanche photodetectors: physics,concepts and performance

In this paper we review the underlying physical principles behind the workings of superlattice/multiquantum well avalanche photodiodes (APDs), examine various device concepts that have been proposed and developed, and discuss their performance. The basic operation, noise and frequency performance of APDs is discussed both in general and as applied to superlattice/multiquantum well devices. The theory of the impact ionization enhancement across a potential step is reviewed. Both experimental and theoretical studies of the ionization enhancement in the simple and doped multiquantum well APDs are discussed, and the progress to date in their realization is reviewed. We conclude with a summary of the performance features of these devices, including a discussion of device reliability and edge breakdown avoidance.     

The effect of barrier strain on the reliability of Inx Al1–xN/AlN/GaN heterostructure field‐effect transistors

We report on the reliability of In_x Al_1–xN/AlN/GaN‐based heterostructure field‐effect transistors (HFETs) fabricated on five different wafers with varying indium compositions (0.12 ≤ x ≤ 0.20) encompassing the tensile/compressive strain fields. All of the tested devices underwent high field on‐state stress at 20 V DC drain bias and zero gate bias for five hours. We monitored the drain current and low‐frequency noise (LFN) a priori and a posteriori the stress treatment to quantify device degradation. HFETs suffering tensile strain showed remarkably large degradation which manifested itself with up to 25 dB increase in noise power and up to 72% loss of drain current after stress. On the other hand, devices fabricated on compressively strained structures remained intact after stress, but they had about 30 dB higher pre‐stress noise‐power levels and about 50% lower drain‐current densities to begin with. The results show that the nearly lattice‐matched In_0.17Al_0.83N barrier exhibited very low degradation along with current density remaining high compared with the devices having barriers with lower or higher indium content. Our results suggest that the nearly‐lattice‐matched InAlN can be a good candidate for devices due to its relatively better reliability while maintaining a high current density. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Quality assessments of electrochromic devices: the possible use of 1/<Emphasis Type="Italic">f</Emphasis> current noise

Electrochromic (EC) devices, capable of modulating their optical transmittance by charge insertion/extraction, were produced by laminating films comprised of nanoporous W oxide and Ni–V oxide by a polymer electrolyte and having this three-layer stack between transparent conducting In₂O₃:Sn films backed by polyester foils. 1/f noise in the current (I) was observed when the charged (colored) EC device was discharged via a resistor. The power spectral density S _i at fixed frequency scaled as S _i  ∼ I ². Extended color/bleach cycling degraded the optical quality and homogeneity of the device and concomitantly increased the 1/f noise intensity. These initial data indicate that 1/f noise has a potential to serve as a quality measure for EC devices.     

电离辐射环境下的部分耗尽绝缘体上硅n型金属氧化物半导体场效应晶体管可靠性研究

随着半导体技术的进步, 集成小尺寸绝缘体上硅器件的芯片开始应用到航空航天领域, 使得器件在使用中面临了深空辐射环境与自身常规可靠性的双重挑战. 进行小尺寸器件电离辐射环境下的可靠性试验有助于对器件综合可靠性进行评估. 参照国标GB2689.1-81恒定应力寿命试验与加速寿命试验方法总则进行电应力选取, 对部分耗尽绝缘体上硅n型金属氧化物半导体场效应晶体管进行了电离辐射环境下的常规可靠性研究. 通过试验对比, 定性地分析了氧化物陷阱电荷和界面态对器件敏感参数的影响, 得出了氧化物陷阱电荷和界面态随着时间参数的变化, 在不同阶段对器件参数的影响. 结果表明, 总剂量效应与电应力的共同作用将加剧器件敏感参数的退化, 二者的共同作用远大于单一影响因子.     

Electric-field induced ion-leveraged metal–insulator transition in conducting polymer-based field effect devices

The field effect devices prepared completely from conducting polymers, especially poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonic acid) (PEDOT/PSS), were studied. Normally in a conductive “on” state, the transistor-like device has a transition to a substantially less conductive “off” state at an applied positive gate voltage, typically ∼15–25 V. The current ratio I_off/I_on can exceed 10⁻⁴ at room temperature. We have found that the field effect is strongly temperature dependent and is substantially reduced upon decreasing the temperature by only a 10 °C. This loss of current reduction upon application of a gate voltage is not due to the temperature dependence of the electrical conductivity of polymers of which the devices are made. The temperature dependence of the dc conductivity of the PEDOT/PSS follows the variable range hopping law both before and after application of the gate voltage, though with an increased activation energy, T₀. We suggest that the conducting polymer is near the metal–insulator transition and that the field effect in the device is related to the electric field modulating this transition in the region underneath the gate electrode. The transition is controlled and leveraged by ion motion. The time dynamics of the current with the gate modulation strongly supports our conjecture. We demonstrate the generality of the phenomena by presenting similar results for devices fabricated from the conducting polypyrrole doped with Cl.     

Redox driven conductance changes for resistive memory

The relationship between bias-induced redox reactions and resistance switching is considered for memory devices containing TiO₂ or a conducting polymer in “molecular heterojunctions” consisting of thin (2–25 nm) films of covalently bonded molecules, polymers, and oxides. Raman spectroscopy was used to monitor changes in the oxidation state of polythiophene in Au/P3HT/SiO₂/Au devices, and it was possible to directly determine the formation and stability of the conducting polaron state of P3HT by applied bias pulses [P3HT = poly(3-hexyl thiophene)]. Polaron formation was strongly dependent on junction composition, particularly on the interfaces between the polymer, oxide, and electrodes. In all cases, trace water was required for polaron formation, leading to the proposal that water reduction acts as a redox counter-reaction to polymer oxidation. Polaron stability was longest for the case of a direct contact between Au and SiO₂, implying that catalytic water reduction at the Au surface generated hydroxide ions which stabilized the cationic polaron. The spectroscopic information about the dependence of polaron stability on device composition will be useful for designing and monitoring resistive switching memory based on conducting polymers, with or without TiO₂ present.     

MEH-PPV/PEG聚合物电双稳器件的研究

将PEG(聚乙二醇)引入到ITO/MEH-PPV(聚(2-甲氧基,5(2'-乙基己氧基)-1,4-苯撑乙烯撑)/Al三明治器件中,实现了很好的电双稳性能。通过改变PEG的分子量、浓度以及退火温度等条件,对器件性能进行了优化。通过电流-电压(I-V)测试研究了不同器件的性能,结果表明,分子量为4 000的PEG,在30 mg/mL的浓度下,通过120℃退火制备的薄膜,其器件性能最优,电流开关比可以达到10~3以上。利用SEM测试研究了活性层的膜形貌,并结合电流-电压(I-V)曲线的线性拟合,分析了电荷在器件中的传输过程。研究发现,相分离产生的陷阱对电荷的俘获是该器件产生电双稳特性的主要原因。     

The g–r noise in quantum well semiconductor lasers and its relation with device reliability

The g–r noise in quantum well semiconductor lasers is studied theoretically and experimentally. The results indicate that the g–r noise is dependent on bias current, the devices show the g–r a noise only at low bias current, with the bias current increasing, the g–r noise will disappear. The g–r noise has a close relation with defects; the devices with g–r noise degrade rapidly during the electric aging. It is means that measuring the noise at low bias current is very important for estimating device reliability.     

Wind noise at microphones within and across hearing aids at wind speeds below and above microphone saturation

The variation of wind noise at hearing-aid microphones with wind speed, wind azimuth, and hearing-aid style was investigated. Comparisons were made across behind-the-ear (BTE) and completely-in-canal (CIC) devices, and between microphones within BTE devices. One CIC device and two BTE devices were placed on a Knowles Electronics Manikin for Acoustic Research. The smaller BTE device had vented plastic windshields around its microphone ports while the larger BTE device had none. The microphone output signals were digitally recorded in wind generated at 0, 3, 6, and 12 m/s at 8 wind azimuths. The microphone output signals were saturated at 12 m/s with wind-noise levels of up to 116 dB SPL at the microphone output. Wind-noise levels differed by up to 12 dB between microphones within the same BTE device, and across BTE devices by up to 6 or 8 dB for front or rear microphones, respectively. On average, wind-noise levels were lowest with the CIC device and highest at the rear microphone of the smaller BTE device. Engineering and clinical implications are discussed.     

发光二极管可靠性的噪声表征

通过对发光二极管内部结构的研究，发现N_t(界面态陷阱密度)和扩散电流比率 是影响发光二极管性能的重要因素，并与器件可靠性有密切关系.器件内部存在的多种噪声 中，低频1/f噪声可表征N_t和扩散电流比率.在深入研究发光二极管工作原理及1 /f噪声载流子数涨落理论和迁移率涨落理论的基础上，建立了发光二极管的电性能模型及1/ f噪声模型.在输入电流宽范围变化的条件下测量了器件的电学噪声，实验结果与理论模型符 合良好.通过对其测量结果分析，深入研究了噪声和发光二极管性能与可靠性的关系，证明 了噪声幅值越大，电流指数越接近于2，器件可靠性越差，失效率则显著增大. 关键词： 1/f噪声 发光二极管 陷阱 光功率     

Performance of personal active noise reduction devices

This paper presents the results of objective tests performed on 13 personal active noise reduction devices (earmuffs, headphones, headsets and insert earphones) divided into four groups based mainly on structure, using an acoustic test fixture (ATF). Each device was examined on its attenuation of broadband noise, overload response, internally generated noise, attenuation of impulse noise, and stability to movement. The results show a large range of responses between devices in terms of attenuation and overload, and highlight distinctive differences between the device groupings.     

Low-frequency noise properties of p-type GaAs/AlGaAs heterojunction detectors

We have measured and analyzed, at different temperatures and bias voltages, the dark noise spectra of GaAs/AlGaAs heterojunction infrared photodetectors, where a highly doped GaAs emitter is sandwiched between two AlGaAs barriers. The noise and gain mechanisms associated with the carrier transport are investigated, and it is shown that a lower noise spectral density is observed for a device with a flat barrier, and thicker emitter. Despite the lower noise power spectral density of flat barrier device, comparison of the dark and photocurrent noise gain between flat and graded barrier samples confirmed that the escape probability of carriers (or detectivity) is enhanced by grading the barrier. The grading suppresses recombination owing to the higher momentum of carriers in the barrier. Optimizing the emitter thickness of the graded barrier to enhance the absorption efficiency, and increase the escape probability and lower the dark current, enhances the specific detectivity of devices.     

An investigation into the noise generation of CPAP devices: Experimental and numerical study

Continuous positive airway pressure (CPAP) devices are popularly used for obstructive sleep apnoea (OSA) treatment. However, the noise level emission from these devices has been identified as a potential factor for patient’s discomfort and rejection. There is a need to obtain information on the noise characteristics and source locations in order to tackle the most serious noise source within these devices. A typical CPAP device was used for the investigation and its sound characteristics and sound power levels were determined. The noise generated from a centrifugal fan was also independently investigated to address its contribution to the overall noise of the device. Frequency analysis suggested that the noise generated from both the CPAP device and the fan is broadband in nature with discrete peaks containing rotational and non-rotational components. The broadband components were then studied in detail using numerical simulation approach. Computational aeroacoustics (CAA) method with hybrid approach was used to a three-dimensional (3-D) CPAP fluid model to predict the aerodynamic and aeroacoustics behaviours of the device. This showed a complicated flow structure involving flow separation, rotation, and vortices in several locations which resulted in high level of flow turbulence inside the device. The turbulent components were used to estimate the broadband noise level at source using the broadband noise source (BNS) models. It shows the most critical location is at the fan region and at the fan inlet.     

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 10 2 . The retention measurement indicates that the memory property of these devices can be maintained for a long time (over 10 4 s under 0.1-V durable stress). Moreover, the operation voltages are very low, -0.4 V (OFF state) and 0.8 V (ON state). A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device.     

PVK/BCP体系电致激基复合物的研究

在PVK/BCP双层电致发光器件中发现了电致激基复合物的发光,器件的光谱中,除了有与光致发光相同的发光峰,在长波方向还有一个新的发光峰,该发光峰就是电致激基复合物的发光,发光来源于BCP的激发态向PVK基态的跃迁。PVK∶BCP混合型器件由于复合区域扩展,BCP分子可以与PVK充分接触,因此电致激基复合物的发光更强。不论是在双层器件还是在混合型器件中,随驱动电压的增加,电致激基复合物的发光都会增强,而混合型器件更加明显,当电压比较高时,器件只有电致激基复合物的发光了,而没有本征发光。