Hopping magnetotransport via nonzero orbital momentum states and organic magnetoresistance

In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance quadratic in a weak magnetic field, B. We extend the theory of hopping magnetoresistance to states with nonzero orbital momenta. Different from s states, a weak magnetic field expands the electron (hole) wave functions with positive magnetic quantum numbers, m>0, and shrinks the states with negative m in a wide region outside the point defect. This together with a magnetic-field dependence of injection/ionization rates results in a negative weak-field magnetoresistance, which is linear in B when the orbital degeneracy is lifted. The theory provides a possible explanation of a large low-field magnetoresistance in disordered π-conjugated organic materials.     

Clear experimental evidence for boundary and impurity scattering related crossover field scales in GaAs/AlGaAs split-gate wires

We study the magnetic field dependence of the correlation field ΔB_cand amplitude δgof the conductance fluctuations, observed in the low temperature magnetoresistance of GaAs/AlGaAs split-gate wires. Near zero field, universality of quantum interference is retained and the magnetoresistance shows universal conductance fluctuations. At high magnetic fields, although the discrete Landau level quantization becomes resolved. ΔB_cand δgare found to increase linearly with magnetic field, with a slope which depends upon the nature of electron scatterings in the wire.     

Contact effects on the magnetoresistance of finite semiconductors

We propose a new theoretical method to study galvanomagnetic effects in bounded semiconductors. The general idea of this method is as follows. We consider the electron temperature distribution and the electric potential as consisting of two terms, one of which represents the regular solution of the energy balance equation obtained from the Boltzmann transport equation at steady-state conditions and the Maxwell equation, while the other is the effect of the specimen size that is significant near the contacts (the boundary layer function). With the distribution of the electric potential at the contacts and the electron temperature distribution at the surface of the sample taken into account, we find that the magnetoresistance is different from the one in the standard theory of galvanomagnetic effects in boundless media. We show that, besides the usual quadratic dependence on the applied magnetic field B, the magnetoresistance can exhibit a linear dependence on B under certain conditions. We obtain new formulas for the linear and quadratic terms of the magnetoresistance in bounded semiconductors. This linear contribution of the magnetic field to the magnetoresistance is essentially due to the spatial dependence of the potential at the electric contacts. We also discuss the possibility of obtaining the distribution of the electric potential at the contacts from standard magnetoresistance experiments. Because the applied magnetic field acts differently on carriers with different mobilities, a redistribution of the electron energy occurs in the sample and thus, the Ettingshausen effect on the magnetoresistance must be considered in bounded semiconductors.     

Magnetoresistance of a two-dimensional electron gas in a parallel magnetic field

The conductivity of a two-dimensional electron gas in a parallel magnetic field is calculated. We take into account the magnetic-field-induced spin-splitting, which changes the density of states, the Fermi momentum, and the screening behavior of the electron gas. For impurity scattering, we predict a positive magnetoresistance for low electron density and a negative magnetoresistance for high electron density. The theory is in qualitative agreement with recent experimental results found for Si inversion layers and Si quantum wells.     

Magnetoresistance of Electrons Channelled by Microscopic Magnetic Field Modulation

We report the magnetoresistance of two-dimensional electron gas, which is made of GaAs based epitaxial mul-tilayers and laterally subjected to a periodic magnetic field. The modulation field is produced by an array of submicrometre ferromagnets fabricated at the surface of the heterostructure. The magnetoresistance of about 20% is found at low temperature 80K. The measurement is in quantitative agreement with semiclassical simulations, which reveal that the magnetoresistance is due to electrons trapped in snake orbits along lines of zero magnetic field.     

Spin Transport in Multi Wall Carbon Nanotubes with Co Electrodes

The magnetic field dependent transport behaviour of Co contacted multi-wall nanotubes is investigated. A sample with three Co electrodes has been measured by two-channel method with an in-plane magnetic field. When the in-plane magnetic field is perpendicular to the tube, high positive magnetoresistance up to 30% is obtained at low temperature from 3 K to 25K and with field parallel to the tube, negative magnetoresistance up to 15% is observed only from the high resistance junction. The detailed positive and negative magnetoresistance behaviour also changes with temperature.     

Parallel magnetic field induced giant magnetoresistance in low density quasi-two-dimensional layers

We provide a possible theoretical explanation for the recently observed giant positive magnetoresistance in high mobility low density quasi-two-dimensional electron and hole systems. Our explanation is based on the strong coupling of the parallel field to the orbital motion arising from the finite layer thickness and the large Fermi wavelength of the quasi-two-dimensional system at low carrier densities.     

Correlation between the negative magnetoresistance effect and magnon excitations in single-crystalline CuCr1.6V0.4Se4

Structural, electrical and magnetic measurements, as well as electron spin resonance (ESR) spectra, were used to characterise the single-crystalline CuCr_1.6V_0.4Se₄ spinel and study the correlation between the negative magnetoresistance effect and magnon excitations. We established the ferromagnetic order below the Curie temperature T _C ≈ 193 K, a p-type semiconducting behaviour, the ESR change from paramagnetic to ferromagnetic resonance at T _C, a large ESR linewidth value and its temperature dependence in the paramagnetic region. Electrical studies revealed negative magnetoresistance, which can be enhanced with increasing magnetic field and decreasing temperature, while a detailed thermopower analysis showed magnon excitations at low temperatures. Spin–phonon coupling is explained within the framework of a complex model of paramagnetic relaxation processes as a several-stage relaxation process in which the V³⁺ ions, the exchange subsystem and conduction electron subsystem act as the intermediate reservoirs.     

Anomalous magnetotransport in chemically doped carbon nanotubes

We report on anomalous magnetotransport features in chemically doped, weakly disordered carbon nanotubes. Under the application of a magnetic field parallel to the tube axis, hole conduction is shown to be strongly affected by impurity scattering with short mean free path and negative magnetoresistance, strongly different from electron conduction with much longer mean free path and positive magnetoresistance behavior.     

The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors.A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current.The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron-hole pairs,and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field.The field dependence,the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron-hole pairs.The simulated magnetoresistance shows good consistency with the experimental results.     

In-plane magnetoresistance of electron-doped superconducting thin films Pr0.9LaCe0.1CuO4

We measured the in-plane magnetoresistance of Pr_0.9LaCe_0.1CuO₄ (PLCCO) epitaxial thin films under various magnetic fields H applied parallel to the tetragonal c-axis. The measurements were performed at the superconducting state as well as the normal state. As the magnetic field is between the low critical field H_c1 and upper critical field H_c2, a critical scaling behavior of electrical resistivity is found. We analyze the electrical transport properties and show the magnetic field H dependence of glass transition temperature T_g and the characteristic temperature T^* for the PLCCO film, which may shed some light on vortex behavior in electron-doped superconductors.     

Anisotropic low-temperature in-plane magnetoresistance in electron doped Nd<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>Ce<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>CuO<Subscript>4+δ</Subscript>

Nominally electron doped antiferromagnetic tetragonal nonsuperconducting Nd_2?xCe _x CuO_4+δ(x=0.12) has been shown to manifest strong angular dependence of the in-plane magnetoresistance on the orientation of the external magnetic field within the ab plane in many aspects similar to that observed in hole doped YBa₂Cu₃O_7?δ and La_2?xSr_xCuO₄. Specific fourfold angular magnetoresistance anisotropy amounting to several percents was observed in oxygen annealed films at low temperatures and in an external magnetic field up to 5.5 T. The strong temperature dependence and fourfold symmetry observed in our sample points to a specific role of rare-earth (Nd) ions in magnetoresistance anisotropy. At low temperature T = 1.4 K, we observed the unusual transformation of magnetoresistance response with increasing the external magnetic field, which seems to be a manifestation of a combined effect of a crossover between first and second order spin-flop transitions and a field-dependent rare-earth contribution to quasiparticle magnetotransport.     

Magnetic property and magnetoresistance in Fe/ITO multilayers

Giant magnetoresistance was found in DC magnetron sputtering Fe/ITO multilayers. The magnetic properties, electrical properties and magnetoresistance were investigated. A critical temperature is found around 50 K where the temperature dependence of resistivity and magnetoresistance ratio exhibit an abruptly change. The temperature dependence of resistance is found to obey Mott's 1/4 law for low temperature. The max magnetoresistance ratio of 2.0% and 6.7% is found at room temperature and 12.5 K, respectively. The increase of magnetoresistance ratio at low temperature is due to the decrease of spin-mixing effect.     

Dephasing by extremely dilute magnetic impurities revealed by Aharonov-Bohm oscillations

We have probed the magnetic field dependence of the electron phase coherence time tau(phi) by measuring the Aharonov-Bohm conductance oscillations of mesoscopic Cu rings. Whereas tau(phi) determined from the low-field magnetoresistance saturates below 1 K, the amplitude of Aharonov-Bohm h/e oscillations increases strongly on a magnetic field scale proportional to the temperature. This provides strong evidence that a likely explanation for the frequently observed saturation of tau(phi) at low temperature in weakly disordered metallic thin films is the presence of extremely dilute magnetic impurities.     

The magnetotransport properties of the intermetallic compound GdCu6

We have studied the temperature and magnetic field dependence of the electrical resistivity of GdCu(6) and have co-related the results with the temperature dependence of heat capacity and magnetization. The magnetoresistance of GdCu(6) is found to be positive both in the paramagnetic and antiferromagnetic regimes. Within the antiferromagnetic regime, the magnetoresistance is very high and increases to still higher values both with increasing field and decreasing temperature. In the paramagnetic regime the magnetoresistance continues to exhibit a finite positive value up to temperatures much higher than that corresponding to the antiferromagnetic to paramagnetic phase transition. We have shown through quantitative analysis that both the temperature dependences of resistivity and heat capacity indicate the presence of spin fluctuations within the paramagnetic regime of GdCu(6). The field dependence of electrical resistivity indicates that the positive magnetoresistance in the paramagnetic phase is not related to the orbital motion of the conduction electrons in a magnetic field (the Kohler rule). In contrast, our analysis indicates that these spin fluctuations are responsible for the positive magnetoresistance observed within this paramagnetic regime. The nature of the field dependence of electrical resistivity is found to be qualitatively similar both in the antiferromagnetic and paramagnetic regimes, which probably indicates that spin fluctuations in the paramagnetic regime are of the antiferromagnetic type.     

Large magnetothermoelectric power in Co/Cu, Fe/Cu and Fe/Cr multilayers

We report and discuss experimental data on the thermoelectric power of magnetic multilayers. Measurements of the thermoelectric power of Fe/Cr, Co/Cu and Fe/Cu multilayers have been carried out in the temperature range 4K < T < 150 K magnetic fields perpendicular to the layers. All specimens were found to exhibit pronounced magnetothermoelectric power (MTEP) effects correlating with their giant negative magnetoresistance. The main difference between the MTEP and the magnetoresistance is in their temperature dependence. Whereas the magnetoresistance is a decreasing function of temperature, the MTEP, at least in Co/Cu and Fe/Cu multilayers, is very small at low temperature and increases rapidly above 30–40 K. We ascribe this high temperature part of the MTEP to spin-dependent electron-magnon scattering and we propose a theoretical model.     

Large anisotropic normal-state magnetoresistance in clean MgB2 thin films

We report a large normal-state magnetoresistance with temperature-dependent anisotropy in very clean epitaxial MgB2 thin films (residual resistivity much smaller than 1 microOmega cm) grown by hybrid physical-chemical vapor deposition. The magnetoresistance shows a complex dependence on the orientation of the applied magnetic field, with a large magnetoresistance (Delta(rho)/(rho)0=136%) observed for the field H perpendicular ab plane. The angular dependence changes dramatically as the temperature is increased, and at high temperatures the magnetoresistance maximum changes to H||ab. We attribute the large magnetoresistance and the evolution of its angular dependence with temperature to the multiple bands with different Fermi surface topology in MgB2 and the relative scattering rates of the sigma and pi bands, which vary with temperature due to stronger electron-phonon coupling for the sigma bands.     

Magnetoelectronic transport of the two-dimensional electron gas in CdSe single quantum wells

Hall mobility and magnetoresistance coefficient for the two-dimensional (2D) electron transport parallel to the heterojunction interfaces in a single quantum well of CdSe are calculated with a numerical iterative technique in the framework of Fermi-Dirac statistics. Lattice scatterings due to polar-mode longitudinal optic (LO) phonons, and acoustic phonons via deformation potential and piezoelectric couplings, are considered together with background and remote ionized impurity interactions. The parallel mode of piezoelectric scattering is found to contribute more than the perpendicular mode. We observe that the Hall mobility decreases with increasing temperature but increases with increasing channel width. The magnetoresistance coefficient is found to decrease with increasing temperature and increase with increasing magnetic field in the classical region.      

Evidence of Electron-Hole Imbalance in WTe_2 from High-Resolution Angle-Resolved Photoemission Spectroscopy

WTe_2 has attracted a great deal of attention because it exhibits extremely large and non-saturating magnetoresistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-based angle-resolved photoemission spectroscopy with high energy and momentum resolutions, we reveal the complete electronic structure of WTe_2. This makes it possible to determine accurately the electron and hole concentrations and their temperature dependence. We find that, with increasing the temperature, the overall electron concentration increases while the total hole concentration decreases. It indicates that the electron-hole compensation,if it exists, can only occur in a narrow temperature range,and in most of the temperature range there is an electron-hole imbalance. Our results are not consistent with the perfect electron-hole compensation picture that is commonly considered to be the cause of the unusual magnetoresistance in WTe_2. We identify a flat band near the Brillouin zone center that is close to the Fermi level and exhibits a pronounced temperature dependence.Such a flat band can play an important role in dictating the transport properties of WTe_2. Our results provide new insight on understanding the oriqgin of the unusual magnetoresistance in WTe_2.     

Both electron and hole Dirac cone states in Ba(FeAs)2 confirmed by magnetoresistance

Quantum transport of Dirac cone states in the iron pnictide Ba(FeAs)(2) with a d-multiband system is studied by using single crystal samples. Transverse magnetoresistance develops linearly against the magnetic field at low temperatures. The transport phenomena are interpreted in terms of the zeroth Landau level by applying the theory predicted by Abrikosov. The results of the semiclassical analyses of a two carrier system in a low magnetic field limit show that both the electron and hole reside as the high mobility states. Our results show that pairs of electron and hole Dirac cone states must be taken into account for an accurate interpretation in iron pnictides, which is in contrast with previous studies.