High on/off current ratio in ballistic CNTFETs based on tuning the gate insulator parameters for different ambient temperatures

A theoretical study is presented on the on/off current ratio limits for a ballistic coaxially-gated carbon nanotube field effect transistor (CNTFET) with highly doped source/drain regions. Based on changes in gate insulator dielectric constant and thickness, the current ratio has been estimated at different ambient temperatures. Decreasing the gate insulator thickness after a certain value around 3 nm causes the current ratio to degrade drastically. Although the higher dielectric constant values have a fair effect on current ratio, this effect could be suppressed when the device with a low gate insulator thickness works at a low ambient temperature. The simulation results also show that the temperature drastically degrades the current ratio value; whereas in a certain range of ambient temperature, tuning the values of gate insulator thickness and dielectric constant could be very helpful. In this way, the optimum values of gate insulator thickness and dielectric constant are identified to offer the highest on/off current ratio of the device.     

纳秒脉冲下高气压SF6中同轴绝缘子沿面闪络影响因素实验研究

研究纳秒脉冲下的绝缘子沿面闪络影响因素对电磁脉冲模拟装置绝缘结构设计具有重要的借鉴意义。通过搭建绝缘子沿面闪络实验平台,实验研究了在0.5 MPa的SF6气体中,脉冲电压波形、绝缘材料和绝缘子沿面场强分布对绝缘子沿面闪络电压的影响。结果表明：绝缘子的闪络电压具有随着脉冲前沿时间减小而增加的趋势;相较于脉冲电压全波,绝缘子在脉冲电压前沿波形耐受下闪络电压较高;聚酰亚胺材料的绝缘性能最好;通过降低绝缘子沿面最大场强,改善电场分布可以有效地提高绝缘子的闪络电压。     

Coherence effects in S/I/N/I/FS tunnel junctions

The dc Josephson effect in superconductor / insulator / normal metal / insulator/ferromagnetic superconductor junctions has been studied. We calculate the de Josephson current based on the Bogoliubov de Gennes equation. The Josephson current is derived as a function of exchange field in ferromagnetic superconductor, normal metal thickness and insulating barrier strength. It is found that there exists an oscillation relation between the critical Josephson current and the normal metal thickness. The oscillation amplitude decreases as the thickness of the normal metal increases or the exchange field augments.[第一段]     

风沙流对高压绝缘子电位和电场分布的影响

研究风沙流对高压绝缘子电位和电场分布的影响,基于有限体积法建立绝缘子风沙气固两相流模型和风沙天气下绝缘子的风-沙-电耦合场模型,计算不同风沙天气下绝缘子表面沙尘的空间分布和沉积及其对绝缘子沿面电位和电场的影响,结果表明：风沙天气下绝缘子沿面电位和电场畸变受风速和粒径影响显著,电位的畸变幅度随风速和粒径的增加而升高,电场的畸变幅度随风速和粒径的增大而减少;风沙天气下绝缘子表面不同的沙尘空间分布和沉积导致绝缘子不同位置沿面电位和电场畸变不同.     

Ta2O5绝缘层厚度对ZnO基薄膜晶体管器件性能的影响

报道了不同厚度TaO5栅绝缘层对氧化锌薄膜晶体管器件性能的影响.在室温下用射频磁控溅射分别制备了100,85,60,40 nm厚度的Ta2O5薄膜作为绝缘层的一组底栅氧化锌薄膜晶体管器件.从实验结果可以得出如下结论:随着Ta2O5栅绝缘层厚度的增加,相应器件的场效应迁移率下降,其数值分别是50.5,59.3,63.8,...     

The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

A GaN/Al_0.3Ga_0.7N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO₂ insulator (HfO₂-FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO₂-FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO₂ insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly.     

Interacting dirac fermions on a topological insulator in a magnetic field

We study the fractional quantum Hall states on the surface of a topological insulator thin film in an external magnetic field, where the Dirac fermion nature of the charge carriers have been experimentally established only recently. Our studies indicate that the fractional quantum Hall states should indeed be observable in the surface Landau levels of a topological insulator. The strength of the effect will however be different, compared to that in graphene, due to the finite thickness of the topological insulator film and due to the admixture of Landau levels of the two surfaces of the film. At a small film thickness, that mixture results in a strongly nonmonotonic dependence of the excitation gap on the film thickness. At a large enough thickness of the film, the excitation gap in the lowest two Landau levels are comparable in strength.     

高压径向均压绝缘堆设计

以形成线储能结合脉冲压缩方式产生数MV高压输出,是脉冲功率系统中常见的技术途径,其中绝缘堆是该类装置工程成败的关键。分析了几种径向均压绝缘堆的均压机制,基于静电场分析程序对径向均压绝缘堆结构进行了优化设计,给出了径向电阻的设计方法。研究表明:采用均压环且均压环与径向电阻电气接触的绝缘堆结构可以获得较均匀的径向电场分布,而径向电阻是绝缘堆设计的关键。在有效作用时间100ns的4.5MV加载电压下,优化设计的绝缘堆阴极三相点电场控制在25kV/cm,Martin电场约120kV/cm,低于理论击穿值。     

Electric field and the charge distribution on the surface of an insulator in a vacuum

The free charge steady-state distribution over the insulator surface that arises in a strong electric field in a vacuum can be found by solving the boundary-value problem for the electrostatic field strength if the angle between the field vector and vacuum-insulator interface is given. A general solution to this boundary-value problem is derived for the case of an in-plane field and rectilinear interfaces. Laws of charge and field formation that follow from the solution obtained are considered. Formulas for the electric field strength and charge density in terms of elementary functions are obtained for a number of particular cases. Power-type expressions for the electric field and a critical angle between the electrode and insulator surface that describe the field behavior and charge distribution near the vacuum-insulator-electrode contact are derived.     

Blumlein主放电开关中绝缘结构对沿面闪络电压的影响北大核心CSCD

Blumlein主放电开关作为关键部件被大量地应用于强流电子直线感应加速器等大型脉冲功率装置中,其中绝缘子在主开关中起隔离水或油与气体的作用。设备在高电压脉冲下长时间或高频次作用时,绝缘子气体侧会出现沿面闪络现象,严重影响直线感应加速器的可靠运行。对Blumlein主放电开关中的绝缘结构进行了电场仿真计算,通过对绝缘子的几何结构和电极形状的优化设计,有效调控了绝缘子表面和电极表面的电场分布,试制了不同构型的绝缘子,开展了在标准雷电波脉冲条件下的沿面闪络研究。研究结果表明,优化后的绝缘子的最低和最高沿面闪络电压相比原始结构分别提升了约35.9%和37.2%。     

Design of correction electrodes for high-voltage vacuum-dielectricinterfaces

High-voltage vacuum insulators often set the limits on energy transfer in pulsed power systems. The ideal vacuum interface has a uniform electric field distribution on the insulator well below breakdown levels and an impedance matched to the pulse generator. This paper describes a procedure to design correction electrodes for the dielectric region of a cylindrical interface using a numerical field solution code. The approach has application to both pulsed and steady-state systems. The method is illustrated with a design for a 10 TW, 6.5 MV pulsed power generator using six correction electrodes. The design minimizes the interface impedance and gives less than 10% field variation along the insulator surface     

A new analytical model of high voltage silicon on insulator （SOI） thin film devices

A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141V/μm at a film thickness of 0.1μm which is much larger than the normal value of about 30V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (V_B,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.     

长脉冲强流二极管径向绝缘研究

 介绍了一种应用于长脉冲强流二极管的径向绝缘结构。简介了真空表面闪络机理，径向绝缘结构的设计思路。采用锥形绝缘结构，使用计算机模拟静电场分布优化设计了几何结构参数，在脉宽为200ns的脉冲源上进行了实验研究。二极管最高输出电压为750kV，平均绝缘子表面耐电场强度约50kV/cm，达到了设计要求。     

多间隙气体开关绝缘子寿命

针对设计的一种堆栈式结构多间隙气体开关,分析了绝缘子污染对开关寿命的影响机理。对绝缘子表面电场分布进行了模拟计算,实验研究了绝缘子污染对开关自击穿电压的影响,得到了开关自击穿电压和绝缘子表面绝缘电阻的变化规律,开关在放电电流32 kA实验条件下工作13 000次后,自击穿电压平均值由171.5 kV降低至130.8 kV,绝缘子表面绝缘电阻由200 G下降至22.6 G,绝缘子已无法正常使用。同时提出了提高绝缘子抗污染能力、延长绝缘子寿命的措施和方法。     

Estimating the energy performance of an insulator with regard to the relaxation time distribution

The energy relationships in the macroscopic electrodynamics of an insulator are analyzed with regard to the polarization relaxation time distribution. Expressions for the discharge power and discharge energy flux densities in an insulator are derived for an electric field exponentially depending on time. The performance of polyethylene terephthalate in capacitive energy storage systems is estimated in terms of energy.     

强流电子束二极管绝缘子分析与设计

对应用在Tesla型强流加速器中的电子束二极管绝缘子进行了仿真,发现电场增强区域与实际发生击穿区域基本一致。从绝缘子沿面电场分布、电力线和绝缘子表面所成角度分布以及材料缺陷等方面分析了击穿发生的原因。认为材料中存在缺陷是导致绝缘子发生击穿的主要原因,局部场增强和非最优化结构设计促成了击穿的发生。对影响绝缘子沿面电场分布的同轴线关键位置进行了设计,得出了阳极倒角半径和阴极屏蔽环半径两个参量的最佳取值范围。     

Electrical field on non-ceramic insulators and its relation to contact angles for constant volume droplets

The presence of water droplets on the surface of insulators provides intensification of the electric field, which are caused by the non-uniform voltage distribution and dielectric properties of the different materials. The degree of Electric field (E-field) intensification at the triple joint, the region where water, the non-ceramic dielectric and the air are in contact, must be carefully analyzed, because under certain conditions, breakdown voltages can be reached, sometimes, under very little or no contamination at all, which can cause the insulator wettability, tracking, flashover and degradation. In this paper, variations of the electrical field over two polymer compounds widely used in the insulator manufacturing industry, Silicone Rubber (SIR) and High Density Polyethylene (HDPE), are analyzed on a 2D geometry with respect to contact angles of constant volume water droplets. The Electrical field is also computed as a function of relative water droplets distances.     

Efficiency of electrical manipulation in two-dimensional topological insulators

We investigate the efficiency of electrical manipulation in a two-dimensional topological insulator by inspecting the electronic states of a lateral electrical potential superlattice in the system. The spatial distribution of the electron density in the system can be tuned by changing the strength of the externally applied lateral electrical superlattice potential. This provides us the information about how efficiently one can manipulate the electron motion inside a two-dimensional topo- logical insulator. Such information is important in designing electronic devices, e.g., an electric field effect transistor made of the topological insulator. The electronic states under various conditions are examined carefully. It is found that the dispersion of the mini-band and the electron distribution in the potential well region both display an oscillatory behavior as the potential strength of the lateral superlattice increases. The probability of finding an electron in the potential well region can be larger or smaller than the average as the potential strength varies. These features can be attributed to the coupled multiple-band nature of the topological insulator. In addition, it is also found that these behaviors are not sensitive to the gap parameter of the two-dimensional topological insulator model. Our study suggests that the electron density manipulation via electrical gating in a two-dimensional topological insulator is less effective and more delicate than that in a traditional single-band semiconductor.     

强流束二极管绝缘子结构设计与实验研究

 介绍了一种应用于强流束二极管的径向绝缘结构,并对其在纳秒脉冲条件下的沿面闪络放电现象进行了研究。使用计算机模拟静电场的方法,对锥形结构绝缘子表面的电场分布进行了研究,优化了几何结构参数。在脉宽为40 ns,重复频率100 Hz的脉冲功率源上对绝缘子进行了实验研究。在历时18个月及100 000次脉冲实验后,发现绝缘子表面具有明显的树枝状放电现象,树枝状放电的根部碳化严重,绝缘子深度方向被完全击穿碳化,出现孔洞。基于固-液交界面闪络特性,对树枝状放电的可能原因进行了探讨。     

Cloaking magnetic field and generating electric field with topological insulator and high permeability material

Topological insulator is a new state of quantum matter. When applied magnetic field is applied on a topological insulator, not only the magnetic field is induced, but also the electric field is induced, vice versa. We designed bi-layer magnetic cloak with topological insulator and high permeability material (HPM), derived the electric field and magnetic field inside and outside the bi-layer topological insulator and HPM. Calculation and simulation results show that the applied magnetic field is cloaked by the bi-layer topological insulator and HPM, and the uniform electric field is induced in the cloaked region.