Excitons and excitonic complexes in GaAs/AlGaAs quantum wells with a low-density quasi-two-dimensional electron and hole channel

The recombination spectra of excitons and excitonic complexes in un-doped GaAs/AlGaAs single quantum wells are investigated. It is shown on the basis of a study of the magnetic-field dependence of the emission spectra and the degree of optical orientation in zero magnetic field and on the basis of electrooptic measurements that not only the density but also the sign of the charge carriers in a well depend strongly on the photoexcitation energy. It is shown on the basis of a comparative analysis of the spin splitting of the recombination lines of free and bound excitons that the recombination line which was attributed earlier to a positively charged exciton corresponds to the recombination of an exciton bound on a neutral acceptor. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 9, 707–713 (10 May 1998)     

Lasing threshold in traps for Bose-condensation of dipolar excitons

We consider exciton recombination lasing in heterostructure traps for Bose–Einstein condensation of dipolar excitons. We show that such structures suit well for class D lasers where cavity decay strongly exceeds polarization decay. We evaluate lasing threshold taking into account specific inhomogeneous broadening of the exciton spectral line owing to Bose–Einstein condensation phenomenon under quasi-equilibrium conditions.It is found that narrowing of the exciton momentum distribution just before the condensation onset considerably lowers lasing threshold. At the same time, it is pointed out that a subsequent formation of condensate itself does not help lasing much. We conclude that it is possible to achieve lasing on polariton modes in nowadays experiments aimed on Bose–Einstein condensation of excitons.     

Theoretical investigation on photovoltaic properties of PC61BM‐PDPP5T system as a promising polymer‐based solar cell

In the current work, dependent density functional theory and time‐dependent density functional theory calculations coupled with the inherent charge hopping model and some visualization techniques have been used to systematically investigate the photovoltaic properties of PC₆₁BM‐PDPP5T system. Calculations show that PC₆₁BM‐PDPP5T system possesses the relatively large open‐circuit voltage 0.82 V the middle‐sized exciton binding energy (0.690 eV), the small internal reorganization energy (0.159 eV) in the exciton‐dissociation process, but the relatively large one (0.396 eV) in the case of charge‐recombination. With a simplified molecular model, the exciton‐dissociation rate constant, k_dis, is estimated to be as large as 1.156 × 10¹⁰ s^?1 in PC₆₁BM‐PDPP5T phase interface, while the charge‐recombination one, k_rec, is only 1.018 × 10⁷ s^?1 under the same condition, which indicates a rapid and efficient photoinduced exciton‐dissociation process. Copyright © 2016 John Wiley & Sons, Ltd.     

Analysis of the photovoltaic efficiency of a molecular solar cell based on a two-level system

A molecular solar cell is modelled as a two-level system connected to electrodes by chains of electron-transporting and hole-transporting orbitals. Light absorption and emission are simulated using the generalised Planck equation and intermolecular charge transfer using non-adiabatic Marcus theory. Quantum efficiency–voltage characteristics, open-circuit voltage and monochromatic power-conversion efficiency are calculated as a function of the following parameters: charge-separation rate, interfacial recombination rate, charge mobility, light intensity and built-in bias. We find that slow charge separation, fast recombination and low mobility all contribute to a decrease in efficiency compared to the ideal (detailed balance) limit. When charge-separation and interfacial recombination rates are related through the intermolecular coupling, maximum efficiency is achieved at some optimum, but not the maximum, charge-separation rate. Two regimes are distinguished for the open-circuit voltage: when interfacial recombination is important, V_oc varies approximately linearly with the donor–acceptor energy gap; but when recombination is insignificant, V_oc is determined by the optical gap. Including exciton binding energy in the driving force for charge separation reduces V_oc. In systems with significant recombination, V_oc first increases and then saturates with increasing light intensity. Low mobility and interfacial recombination are the main avoidable sources of loss when realistic parameters are used, but the effects of low mobility can be partly compensated by applying a built-in bias between the electrodes. PACS 72.40.+w; 73.40.Lq; 72.80.Le     

Radiative recombination associated with a two-dimensional space charge layer in silicon

We present photoluminescence measurements in Si-MOS structures in presence of a two-dimensional space charge layer. A unique feature is observed: the electron-hole droplet and exciton recombinations are quenched, and a new radiative recombination channel appears, in presence of an electron space charge layer at the (1 1 1) and the (1 1 0) surfaces and of a hole space charge layer in the (1 0 0) surface. The dependence of the energy of this new band on the two-dimensional carrier concentrations is given and a simple model to explain the observed features is proposed.     

Radiative and non-radiative relaxation of excitons in strain-compensated quantum dots

We have investigated the population dynamics of excitons in strain-compensated InAs quantum dots (QDs) using a pump–probe technique under resonant excitation. Precise control of polarization directions of incident pulses enabled us to selectively estimate population lifetimes for two orthogonally polarized exciton ground states according to polarization selection rules. Measured decay times of the probe transmissions were highly dependent on the polarization directions of the exciton states. We found that the ratio of the decay times for the orthogonally polarized states is in quantitative agreement with the ratio of square of the transition dipole moments. This indicates that radiative recombination processes have a dominant effect on the population dynamics and that non-radiative and spin relaxations are negligible in our QDs. As a result, we can estimate the radiative lifetimes to be 1.0±0.1 and 1.7±0.2 ns for orthogonally polarized exciton ground states.     

Analysis of LO and TO phonon assisted free exciton luminescence in silicon

Linefits are made of LO and TO phonon assisted free exciton luminescence spectra in silicon. The temperature range covered is 1.55–4.0 K. Values of the recombination rates, the phonon energy splitting, the intrinsic line broadening, and the exciton ground state splitting are deduced. The splitting of the indirect ground state is found to be 0.31±0.03 meV.     

Evidence for exciton binding at Ni impurity sites in ZnSe

A broad charge transfer band is observed in the photoluminescence excitation (PLE) spectrum of the 2.5 μ Ni²⁺ luminescence in ZnSe : Ni. This band lies above the highest energy d-d excitation bands and exhibits a ZPL at 1.8163 eV and LO(#38;0lambda;) phonon replicas at higher energy. In contrast, PLE spectra of Co²⁺ luminescence in ZnSe:Co contain only d-d excitation bands. The charge transfer band in ZnSe:Ni is interpreted as evidence for bound exciton formation at the Ni site. The recombination energy of this exciton is transferred efficiently to the excited d-band states of the Ni ion, leading to characteristic Ni²⁺d-d luminescence.     

Shape of recombination lines for exciton complexes in quantum dots with in-plane electric field

We study electron–hole recombination lines of exciton (X) and exciton complexes (X−, X+, 2X) in planar quantum dots with the electric field oriented within the plane of confinement. A model of a two-dimensional circular infinite quantum well is applied and the ground state of the complexes is found using an exact diagonalization method. We demonstrate that for each of the exciton complexes the recombination lines become non-monotonic for some material and sample parameters as a result of Coulomb interactions. A phase diagram for the line shape is presented. The relation of the exact results to the mean field approach is also discussed.     

Polarization spectroscopy of positive and negative trions in an InAs quantum dot

Using polarization-sensitive photoluminescence and photoluminescence excitation spectroscopy, we study single InAs/GaAs self-assembled quantum dots. The dots were embedded in an n-type, Schottky diode structure allowing for control of the charge state. We present here the exciton, singly charged exciton (positive and negative trions), and the twice negatively charged exciton. For non-resonant excitation below the wetting layer, we observed a large degree of polarization memory from the radiative recombination of both the positive and negative trions. In excitation spectra, through the p-shell, we have found several sharp resonances in the emission from the s-shell recombination of the dot in all charged states. Some of these excitation resonances exhibit strong coulomb shifts upon addition of charges into the quantum dot. One particular resonance of the negatively charged trion was found to exhibit a fine structure doublet under circular polarization. This observation is explained in terms of resonant absorption into the triplet states of the negative trion.     

Transient demonstration of exciton behaviours in solid state cathodoluminescence under different driving voltage

In the solid state cathodoluminescence (SSCL), organic materials were excited by hot electrons accelerated in silicon oxide (SiO₂) layer under alternating current (AC). In this paper exciton behaviours were analysed by using transient spectra under different driving voltages. The threshold voltages of SSCL and exciton ionization were obtained from the transient spectra. The recombination radiation occurred when the driving voltage went beyond the threshold voltage of exciton ionization. From the transient spectrum of two kinds of luminescence (exciton emission and recombination radiation), it was demonstrated that recombination radiation should benefit from the exciton ionization.     

Formation of excitons from free electron–hole pairs due to acoustic phonon interactions in quantum wells

A study of the process of exciton formation due to acoustic phonon interaction in quantum wells (QWs) is presented. Considering that excitons are formed from photoexcited free electron–hole pairs, we have derived the rate of such formation as a function of density and temperature of charge carriers and wavevectorK_|| of the center-of-mass motion of exciton, and finally applied our theory to GaAs/AlGaAs QWs. We have found that the formation of an exciton due to acoustic phonon emission is more efficient at relatively large values ofK_|| (hot excitons) whereas that due to longitudinal optical (LO) phonon emission is more efficient at relatively small values of K_||.     

CdSeS合金结构量子点的多激子俄歇复合过程

多激子效应通常是指吸收单个光子产生多个激子的过程,该效应不仅可以为研究基于量子点的太阳能电池开拓新思路,还可以为提高太阳能电池的光电转换效率提供新方法.但是,超快多激子产生和复合机制尚不明确.这里以CdSeS合金结构量子点为研究对象,研究了其多激子生成和复合动力学.稳态吸收光谱显示, 510, 468和430 nm附近的稳态吸收峰,分别对应1S_(3/2)(h)-1S(e)(或1S), 2S_(3/2)(h)-1S(e)(或2S)和1P_P(3/2)(h)-1P(e)(或1P)激子的吸收带.通过飞秒时间分辨瞬态吸收光谱和纳秒时间分辨荧光光谱两种时间分辨光谱技术对CdSeS合金结构量子点的超快动力学进行了探究,结果显示, 1S激子的双激子复合时间大概是80 ps,这一时间比传统量子点的双激子复合时间(小于50 ps)延长了近一倍,结合最近发展的超快界面电荷分离技术,在激子湮灭之前将其利用起来,这一时间的延长将有很大的应用前景;其中,在2S和1P激子中除上述双激子复合外,还存在一个通过声子耦合路径的空穴弛豫过程,时间大概是5—6 ps.最后,利用纳秒时间分辨荧光光谱得到该样品体系单激子复合的时间约为200 ns.     

Hole injection and surface state effects at gallium arsenide electrodes

We report capacitance and luminescence measurements at gallium arsenide electrodes in 1 M H₂SO₄ electrolyte that indicate the injection of holes on cathodic polarization. The steady-state potential-current relations and photoeffects are reviewed critically. We show that the assumption of hole injection is equally plausible to that of electron extraction provided the surface recombination velocity is fast compared to the bulk diffusion and recombination process. In addition to the space charge there is a substantial surface charge of the type commonly observed at III–V semiconductor surfaces.     

Time-resolved photoluminescence study of GaInAs/AlGaInAs superlattices

We present results of time-resolved photoluminescence experiments performed at 77 K on a GaInAs/AlGaInAs superlattice grown by molecular beam epitaxy and lattice matched to an InP substrate. The superlattice is the intrinsic part of a p–i–n diode. Photoluminescence spectra, reconstructed at various delay times between 5 ps and 100 ps after the laser pulse, show lines associated to the 1s and 2s heavy-hole exciton states and to the free carrier recombination. This result provides a direct determination of the binding energy of the heavy-hole exciton which is shown to be equal to 15 meV. Such a large value of the Rydberg is due to the fluctuations of composition which cause the heavy-hole exciton to be localized within a single well. The spectra also exhibit a shoulder which corresponds to the electron-to-light-hole transition. The 2s heavy-hole-exciton transition is coupled to the latter by an LO phonon. Finally a transition 21 meV below the 1s heavy-hole-exciton energy is related to Be residual impurities.     

Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers.By measuring the exciton decay time as a function of the monitored emission energy at different temperatures,we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 12OK. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results.     

应变纤锌矿GaN/A10.15Ga0.85N柱形量子点的光学性质:流体静压力效应

在有效质量近似下,考虑强的内建电场和应变对材料参量的影响,变分研究了流体静压力对有限高势垒应变纤锌矿GaN/Al_0.15Ga_0.85N柱形量子点中重空穴激子的结合能、发光波长和电子空穴复合率的影响.数值结果表明,激子结合能和电子空穴复合率随流体静压力的增大而近线性增大,发光波长随流体静压力的增大而单调减小.在量子点尺寸较小的情况下,流体静压力对激子结合能和电子空穴复合率的影响更明显.由于应变效应,为了获得有效的电子-空穴复合过程,GaN量子点的高度必须小于5.5 nm.     

Radiative and nonradiative recombination of self-trapped exciton on silicon nanocrystal interface

The theory of the multiphonon and radiative recombination of a self-trapped exciton on the interface of a silicon nanocrystal in a SiO₂ matrix is developed. Self-trapped excitons play a key role in the hot carrier dynamics in nanocrystals under photoexcitation. The ratio of the probabilities of the multiphonon and radiative recombination of the self-trapped exciton is estimated. The probabilities of exciton tunnel transition from the self-trapped state to a nanocrystal are calculated for nanocrystals of various sizes. The infrared range spectrum of the luminescence of the self-trapped exciton is obtained.     

Spin Physics of Excitons in Colloidal Nanocrystals

We present a review of spin-dependent properties of excitons in semiconductor colloidal nanocrystals. The photoluminescences (PL) properties of neutral and charged excitons (trions) are compared. The mechanisms and the polarization of radiative recombination of a “dark” (spin-forbidden) exciton that determines the low-temperature PL of colloidal nanocrystals are discussed in detail. The radiative recombination of a dark exciton becomes possible as a result of simultaneous flips of the surface spin and electron spin in a dark exciton that leads to admixture of bright exciton states. This recombination mechanism is effective in the case of a disordered state of the spin system and is suppressed if the polaron ferromagnetic state forms. The conditions and various mechanisms of formation of the spin polaron state and possibilities of its experimental detection are discussed. The experimental and theoretical studies of magnetic field-induced circular polarization of PL in ensembles of colloidal nanocrystals are reviewed.     

Calculating the nonequilibrium carrier relaxation kinetics in AlGaAs

The effect of the initial density of nonequilibrium electron–hole pairs on the kinetics of their relaxation is analyzed. The influence of cooling, formation, ionization, and radiative recombination of excitons is discussed. It is shown that the exciton lifetime increases with the optical excitation density and, as a result, maximum exciton density is attained for a longer time.