The reaction kinetics of Cu with the CdTe(111)-B surface: formation of metastable Cu(x)Te (x approximately 2)

In the present study, elemental Cu is deposited on the clean CdTe(111)-B surface and annealed in vacuum. Surface-composition maps generated by scanning Auger microcopy provide evidence that a reaction occurs between Cu and the CdTe(111)-B substrate that results in the formation of a metastable copper telluride phase Cu(x)Te (x approximately 2) at the surface. In situ thermal-desorption mass spectrometry measurements show that elemental Cd is released during the reaction and desorbs from the surface. Desorption of Te from the substrate is suppressed during the reaction. Analysis of Cd desorption traces demonstrates that the Cu + CdTe(111)-B reaction proceeds via zero-order kinetics, with an activation energy of 180 +/- 5 kJ mol(-1).     

Silica Coating of Water-Soluble CdTe/CdS Core-Shell Nanocrystals by Microemulsion Method

"Using Te powder as a tellurium source and Na2S as a sulfur source, core-shell CdTe/CdS NPs were synthesized at 50 oC. UV-visible and photoluminescence (PL) spectra were used to probe the effect of CdS passivation on the CdTe quantum dots. As the thickness of CdS shell increases, there is a red-shift in the optical absorption spectra, as well as the PL spectra. The broadening absorption peaks and PL spectra indicate that the size distributions of CdTe/CdS NPs widen increasingly with the increase of CdS coverage. The PL spectra also show that the fluorescence intensity of CdTe QDs will increase when the particles are covered with CdS shell with ratio of S/Te less than 1.0, otherwise it will decrease if the ratio of S/Te is larger than 1.0. Furthermore, the (CdTe/CdS)@SiO2 particles were prepared using a water-in-oil microemulsion method at room temperature in which hydrolysis of tetraethyl orthosilicate leads to the formation of monodispersed silica nanospheres. The obtained (CdTe/CdS)@SiO2 particles show bright photoluminescence with their fluorescence intensity being enhanced 18.5% compared with that of CdTe NPs. TEM imaging shows that the diameter of these composite particles is 50 nm. These nanoparticles are suitable for biomarker applications since they are much smaller than cellular dimensions."     

Spectroscopic investigations on II–VI-semiconductor nanocrystals and their assemblies

This review points out that (magneto-)optical measurements may help to shine light on the recombination processes taking place in semiconductor nanocrystals. The surface capping with thiols creates a CdS shell around CdTe cores and forms a Cd site that is not fourfold-coordinated at the surface. It is pointed out how specific cappings such as thio-amines and thio-acids assist in coupling NCs and how we may distinguish between NC–NC interactions via electrostatic and covalent linking with the aid of the optical measurements. Furthermore, with static and time-resolved ODMR studies on IR-active core-shell HgTe/Hg _x Cd_1−x Te(S) particles it is demonstrated how the nature of the recombination emission being associated with a Cd–Hg mixed site is elucidated and by this yielding structural information on the NC core-shell interface. With these examples we show that and how nanomaterials of probable technological interest are studied beneficially with advanced spectroscopic techniques.     

Chemischer Transport fester Lösungen. 20 [1] Der Chemische Transport von Mischphasen in den Systemen CdS/CdTe und CdSe/CdTe

Chemical Vapor Transport of Solid Solutions. 20, Chemical Vapor Transport of Mixed Phases in the Systems CdS/CdTe and CdSe/CdTe By means of CVT methods using iodine as transport agent (900 → 800 °C) in the systems CdS/CdTe and CdSe/CdTe mixed crystals could be prepared. The system CdS/CdTe shows a broad miscibility gap. Sulfur rich mixed crystals as well as tellurium rich ones could be prepared. The system CdSe/CdTe shows complete miscibility for all Se/Te ratios. In both systems congruent transport has been observed.     

Neutron activation analysis of semiconductor materials

Two examples of the use of neutron activation analysis for the characterization of semiconductor materials are given. 23 elements were determined in ASTM silicon intercomparison samples. Most elements are below the detection limits, which vary between 0.009–300 ng/g. CdS/CdTe thin films have been characterized by determining the Cd, Te, Cl, I and In concentrations of dissolved films. Parallel determinations in different samples of films prepared under identical conditions agreed within 0–53% (average deviation 21%) for Cl, Cd, In and I in CdS and 1.6–22% (average 8.7%) for Cd and Te in CdS/CdTe, respectively. It was determined both by NAA and resonance ionization spectrometry (RIS). The order of magnitude of the results was 1 ng/g and they agree within the range 7–64% (average difference 25%). The analytical procedures are described and discussed.     

CdTe electrodeposition on InP(100) via electrochemical atomic layer epitaxy (EC-ALE): studies using UHV-EC

The II-VI compound semiconductor CdTe was electrodeposited on InP(100) surfaces using electrochemical atomic layer epitaxy (EC-ALE). CdTe was deposited on a Te-modified InP(100) surface using this atomic layer by atomic layer methodology. The deposit started with formation of an atomic layer of Te on the InP(100) surface, as Cd was observed not to form an underpotential deposition (UPD) layer on InP(100), although it was found to UPD on Te atomic layers. On the In-terminated 'clean' InP(100) surface, Te was deposited at -0.80 V from a 0.1 mM solution of TeO2, resulting in formation of a Te atomic layer and some small amount of bulk Te. The excess bulk Te was then removed by reduction in blank solution at -0.90 V, leaving a Te atomic layer. Given the presences of the Te atomic layer, it was then possible to form an atomic layer of Cd by UPD at -0.58 V to complete the formation of a CdTe monolayer by EC-ALE. That cycle was then repeated to demonstrate the applicability of the cycle to the formation of CdTe nanofilms. Auger spectra recorded after the first three cycles of CdTe deposition on InP(100) were consistent with the layer-by-layer CdTe growth. It is interesting to note that Cd did not form a UPD deposit on the In-terminated InP(100) surface and only formed Cd clusters at an overpotential. This issue is probably related to the inability of the Cd and In to form a stable surface compound.     

Synthesis of Aqueous CdTe Nanocrystals with High Efficient Blue‐Green Emission of Exciton

As one of the most popular nanocrystals (NCs), aqueous CdTe NCs have very weak green emission under conventional synthesis conditions. In this work, we report the first example of blue‐emitting CdTe NCs directly synthesized in aqueous solution by slowing down the growth rate after nucleation. The key for the synthesis is the optimization of NC growth conditions, namely pH range of 7.5 to 8.5, TGA/Cd ratio of 3.6, Cd/Te ratio of 10, and Te concentration of 2×10^?5 mol/L, to get a slow growth rate after nucleation. The as‐prepared blue‐emitting CdTe NCs have small size (as small as 1.9 nm) and bright emission [with 4% photoluminescence quantum yield (PL QY) at 486 nm and 17% PLQY at 500 nm]. Transmission electron microscopy (TEM) images of the as‐prepared CdTe show monodispersed NCs which exhibit cubic zinc blend structure. Moreover, time‐resolved PL decay and X‐ray photoelectron spectroscopy (XPS) results show the as‐prepared NCs have better surface modification by ligand, which makes these luminescent small CdTe NCs have higher photoluminescence quantum yield, compared with NCs synthesized under conventional conditions.     

Stabilization of the thermodynamically favored polymorph of cadmium chalcogenide nanoparticles CdX (X = S, Se, Te) in the polar mesopores of SBA-15 silica

A versatile synthetic approach to cadmium chalcogenide nanoparticles in the mesopores of SBA-15 silica as a host matrix was developed. The use of cadmium organochalcogenolates of the type Cd(XPh)(2).TMEDA (X = S, Se, Te) allowed the preparation of nanoparticles of all three cadmium chalcogenides following the same experimental protocol. Particles of CdS, CdSe, and CdTe with a particle size of 7 nm were prepared from this class of single-source precursors. The incorporation of the precursor molecules into the pores was achieved by melt infiltration at a temperature of 140 degrees C. Subsequent pyrolysis of the precursors in the mesopores yielded the semiconductor particles. Owing to the high polarity of the silanol-covered pore walls, which lower the surface energy of the particles to a large extent, the dimorphic cadmium chalcogenides are obtained in their thermodynamically favored modifications; e.g., CdS particles crystallize in the wurtzite type, CdTe particles are obtained in the zinc blende structure, and CdSe (where no unambiguous preference exists) crystallizes as a "mixture" of both structures with a rather random stacking sequence.     

室温水相合成CdTe/CdS核/壳结构量子点

开发了一种以聚乙烯吡咯烷酮为分散剂和稳定剂经条件温和的室温水相合成光谱可调的水溶性CdTe/CdS核/壳结构量子点的方法:向新鲜制备的CdTe量子点溶液中加入硫源,继续反应即可生成CdS壳层,通过控制硫源的浓度即可控制CdS壳层厚度,从而调节光谱性质和增强稳定性.采用XRD、TEM、HRTEM、荧光光谱以及紫外-可见光...     

Stable Water‐dispersed CdTe Nanocrystals Dependent on Stoichiometric Ratio of Cd to Te Precursor

The improved properties of CdTe nanocrystals (NCs) synthesized by hydrothermal method were introduced. The experimental results indicated that the NCs properties could be dramatically influenced by means of changing Cd‐to‐Te molar ratio (the molar ratio of CdCl₂ and NaHTe in the precursor) of the MPA‐capped CdTe NCs. With the increase of the ratio from 2:1 to 10:1, the formation time of near‐infrared‐emitting CdTe NCs was shortened. In particular, high Cd‐to‐Te molar ratio brought about MPA‐capped CdTe NCs of superior radical oxidation‐resistance and photostability. As a result, the optimum ratio was found to be 8:1 or 10:1 in the study in order to efficiently attain stable, water‐dispersed CdTe NCs.     

Synthesis of CdTe Quantum Dots with Tunable Photoluminescence Using Tellurium Dioxide as Tellurium Source

A simple and convenient method has been developed for synthesis of water‐soluble CdTe quantum dots (QDs) under ambient atmospheric conditions. In contrast to the traditional aqueous synthesis, green to red emitting CdTe QDs were prepared by using TeO₂ to replace Te or Al₂Te₃ as tellurium source in this method. The influences of experimental variables, including pH value, 3‐mercaptopropionic acid (MPA)/Cd and Te/Cd molar ratios, on the emission peak and photoluminescence (PL) quantum yield (QY) of the obtained CdTe QDs have been systematically investigated. Experimental results indicate that green to red emitting CdTe QDs with a maximum photoluminescence quantum yield of 35.4% can be prepared at pH 11.3 and n_(Cd):n_(Te):n_(MPA)=1:0.1:1.7.     

First‐principles study of the TiN(111)/ZrN(111) interface

The TiN(111)/ZrN(111) interface was studied by first‐principles method to provide the theoretical basis for developing the TiN/ZrN coatings. Twelve geometry structures of TiN(111)/ZrN(111) interfaces were established. The calculated interfacial work of adhesion reveals that the N‐terminated TiN/N‐terminated ZrN interface with TL site shows the strongest stability. For this TiN(111)/ZrN(111) interface, the results of the partial density of state indicate that the chemical bonding at the interface appeals both ionic and covalent characteristic, which is same as that in the bulk materials. The partial density of states for Zr, Ti, and N atoms at the interface are very similar with those in the bulk, which reveals that the electronic structure transition at the interface is smooth. The results of charge density and charge density difference demonstrate that the lost charge of Ti atom is larger than that of Zr atom, indicating that TiN is more ionic than ZrN. Calculations of the work of fracture indicate that the mechanical failure of the ZrN(111)/TiN(111) interface will take place at the interface. Besides that, the calculation result of the TiN(111)/ZrN(111) interface implies that the TiZrN₂ phase might be formed at the interface because the contacting of the N―N bond is the most stable.     

Optical absorption and valence band photoemission from uncapped CdTe nanocrystals

CdTe nanocrystals have been successfully fabricated by a mechanical alloying process. X-ray diffraction (XRD) patterns demonstrate that a single-phase CdTe compound with a zinc blende structure has been formed after ball milling elemental Cd and Te mixture powders for 27 h. The large broadening effect for the width of the {111} diffraction peak of uncapped CdTe nanocrystals on smaller size was observed in slowly scanned XRD patterns. The X-ray photoelectron spectrum was used to study the surface of the uncapped CdTe nanocrystals within both core level and valence band regions. The presence of tellurium oxide film on the surface of the uncapped CdTe nanocrystals has been detected in the X-ray photoelectron spectrum of the Te 3d core level, which was comparable to the observed amorphous oxide thin layer on the surface of uncapped CdTe nanocrystals in a high resolution transmission electron microscopy (HRTEM) image. The energy of the valence band maximum for uncapped CdTe powders blue shifts to the higher energy side with smaller particle sizes. In UV-visible optical absorption spectra of the suspension solution containing uncapped CdTe nanocrystals, the absorption peaks were locating within the ultraviolet region, which shifted toward the higher energy side with prolonged ball milling time. Both blue shifts of valence band maximum energy and absorption peaks with decreasing particle size provide a unique pathway to reveal the quantum confinement effect of uncapped CdTe nanocrystals.     

具有光谱可调、高量子产率和稳定性的水溶性CdTe/Cd(OH)2核壳结构纳米粒子的可控水相合成

建立了一种简便的、以易得的无机盐为反应前体的水相法制备水溶性、高量子产率以及良好稳定性的CdTe/Cd(OH)2核壳结构量子点。本方法可以通过控制Cd(OH)2 壳层结构的厚度,使不同粒径量子点的荧光发射光谱由蓝绿色渐变到橙红色。利用透射电镜、X射线粉末衍射光谱、荧光光谱以及紫外可见光谱对该CdTe/Cd(OH)2核壳结构量子点进行了表征。CdTe/Cd(OH)2核壳结构量子点所具备的良好的水溶性可望应用于生物标记。本方法简便、反应条件温和并且容易操作,为无机金属化物包覆量子点提供了一种简便的途径。     

量子点-卟啉纳米复合体系在肿瘤细胞成像中的应用

本文合成了高荧光量子产率、单分散性好的水溶性CdTe量子点(quantum dots,QDs),并与α,β,γ,δ-四(1-甲基吡啶嗡-4-基)卟吩对甲苯磺酸盐(TMPyP)组装成QDs-TMPyP纳米复合物,研究了该复合物检测DNA的机理以及肿瘤细胞成像。结果显示,QDs-TMPyP纳米复合物通过光致电子转移机制检测DNA,当CdTe QDs和CdTe QDs-TMPyP浓度低于1.0μmol/L时,HeLa肿瘤细胞存活率达92%以上,表现出低的细胞毒性。0.2μmol/L CdTe QDs-TMPyP作用于肿瘤细胞时,细胞生长状态良好,对细胞内能谱分析发现细胞内含有Cd和Te原子。CdTe QDs-TMPyP复合物比CdTe QDs更易被HeLa细胞摄取,利用量子点荧光成功实现了细胞核内成像,为宫颈癌细胞药物输送和细胞成像的深入研究打下基础。     

颜色可调的高荧光CdTe量子点的水相合成

以亚碲酸钠为碲源,硼氢化钠为还原剂,一步合成了巯基丁二酸(MSA)稳定的CdTe量子点.研究了反应液pH值、镉与碲的摩尔比及镉与巯基丁二酸的摩尔比等实验条件对CdTe量子点体系荧光量子产率的影响,并用荧光光谱、X射线粉末衍射及透射电子显微镜等对其进行了表征.结果表明,CdTe量子点具有闪锌矿结构,形貌呈球状;在pH=1...     

Preparation and Optical Properties of CdTe/CdO-nH2O Core/shell Nano-composites in Aqueous Solution

"The deposition of CdO?nH2O on CdTe nanoparticles was studied in an aqueous phase. The CdTe nanocrystals (NCs) were prepared in aqueous solution through the reaction between Cd2+ and NaHTe in the presence of thioglycolic acid as a stabilizer. The molar ratio of the Cd2+ to Te2- in the precursory solution played an important role in the photoluminescence of the ultimate CdTe NCs. The strongest photoluminescence was obtained under 4.0 of Cd2+/Te2- at pH?8.2. With the optimum dosage of Cd(II) hydrous oxide deposited on the CdTe NCs, the photoluminescence was enhanced greatly. The photoluminescence of these nanocomposites was kept constant in the pH range of 8.0-10.0, but dramatically decreased with an obvious blue-shifted peak while the pH was below 8.0. In addition, the photochemical oxidation of CdTe NCs with cadmium hydrous oxide deposition was markedly inhibited."     

DFT characterization of nanostructured germanium surfaces induced by cobalt atoms

By deposition in ultra‐high vacuum of cobalt on a Ge(111)–c(2 × 8) surface, Mocking et al. obtained a surface reconstruction. In the present paper, we analyse the related atomic structure, proposed by these authors, by means of density functional theory calculations. The surface presents ordered clusters that consist of six Ge atoms arranged in a triangle, lying above three Co atoms. The latter are located at substitutional positions within the top plane of the Ge(111) first bilayer. These clusters are similar to what is obtained on part of the Co‐induced Si(111) surface. For this surface, the clusters are terminated either by six Si atoms or by one, two or three adatoms above the six Si atoms. As the Co–Ge clusters systematically display six protrusions in the scanning tunnelling microscopy measurements by Mocking et al., we investigated why Ge adatoms are not present. Comparison of the Gibbs energy, interatomic distances, as well as charge density indicates that Ge adatoms on top of Co‐Ge clusters are less stable than Si adatoms in the Co‐Si system. Copyright © 2013 John Wiley & Sons, Ltd.     

New insights on the Cd UPD on Au(111)

The Cd underpotential deposition (UPD) process on Au(111) was analyzed by means of combined electrochemical measurements and in situ scanning tunneling microscopy (STM). In the underpotential range 300?ΔE (mV) ?400, 2D Cd islands are formed on the fcc regions of the Au(111)‐(√3 × 22) reconstructed surface without lifting the reconstruction. At lower underpotentials, the 2D Cd islands grow and, simultaneously, new 2D islands nucleate and coalesce with the previous ones forming a complete condensed Cd monolayer (ML). STM images and long time polarization experiments performed at ΔE = 70 mV demonstrate the formation of an Au? Cd surface alloy. At ΔE = 10 mV, the formation of the complete Cd ML is accompanied by a significant Au? Cd surface alloying and the kinetic results reveal two different solid‐state diffusion processes. The first one, with a diffusion coefficient D₁ = 4 × 10^?17 cm² s^?1, could be ascribed to the mutual diffusion of Au and Cd atoms through a highly distorted (vacancy‐rich) Au? Cd alloy layer. The second and faster diffusion process (D₂ = 7 × 10^?16 cm² s^?1) is associated with the appearance of an additional peak in the anodic stripping curves and could be attributed to the formation of another Cd_zAu_x alloy phase. Copyright © 2008 John Wiley & Sons, Ltd.     

Wet chemical functionalization of III-V semiconductor surfaces: alkylation of gallium arsenide and gallium nitride by a Grignard reaction sequence

Crystalline gallium arsenide (GaAs) (111)A and gallium nitride (GaN) (0001) surfaces have been functionalized with alkyl groups via a sequential wet chemical chlorine activation, Grignard reaction process. For GaAs(111)A, etching in HCl in diethyl ether effected both oxide removal and surface-bound Cl. X-ray photoelectron (XP) spectra demonstrated selective surface chlorination after exposure to 2 M HCl in diethyl ether for freshly etched GaAs(111)A but not GaAs(111)B surfaces. GaN(0001) surfaces exposed to PCl(5) in chlorobenzene showed reproducible XP spectroscopic evidence for Cl-termination. The Cl-activated GaAs(111)A and GaN(0001) surfaces were both reactive toward alkyl Grignard reagents, with pronounced decreases in detectable Cl signal as measured by XP spectroscopy. Sessile contact angle measurements between water and GaAs(111)A interfaces after various levels of treatment showed that GaAs(111)A surfaces became significantly more hydrophobic following reaction with C(n)H(2n-1)MgCl (n = 1, 2, 4, 8, 14, 18). High-resolution As 3d XP spectra taken at various times during prolonged direct exposure to ambient lab air indicated that the resistance of GaAs(111)A to surface oxidation was greatly enhanced after reaction with Grignard reagents. GaAs(111)A surfaces terminated with C(18)H(37) groups were also used in Schottky heterojunctions with Hg. These heterojunctions exhibited better stability over repeated cycling than heterojunctions based on GaAs(111)A modified with C(18)H(37)S groups. Raman spectra were separately collected that suggested electronic passivation by surficial Ga-C bonds at GaAs(111)A. Specifically, GaAs(111)A surfaces reacted with alkyl Grignard reagents exhibited Raman signatures comparable to those of samples treated with 10% Na(2)S in tert-butanol. For GaN(0001), high-resolution C 1s spectra exhibited the characteristic low binding energy shoulder demonstrative of surface Ga-C bonds following reaction with CH(3)MgCl. In addition, 4-fluorophenyl groups were attached and detected after reaction with C(6)H(4)FMgBr, further confirming the susceptibility of Cl-terminated GaN(0001) to surface alkylation. However, the measured hydrophobicities of alkyl-terminated GaAs(111)A and GaN(0001) were markedly distinct, indicating differences in the resultant surface layers. The results presented here, in conjunction with previous studies on GaP, show that atop Ga atoms at these crystallographically related surfaces can be deliberately functionalized and protected through Ga-C surface bonds that do not involve thiol/sulfide chemistry or gas-phase pretreatments.