A10LaCdSb9 (A=Ca,Yb): A Highly Complex Zintl System and the Thermoelectric Properties

Two new Zintl compounds A₁₀LaCdSb₉ (A=Ca, Yb), namely, Ca_9.81(1)La_0.97(1)Cd_1.23(1)Sb₉ and Yb_9.78(1)La_0.97(1)Cd_1.24(1)Sb₉, have been designed and synthesized by applying the Zintl concept. Although both compounds are isoelectronic with their Ca₁₁InSb₉ and Yb₁₁InSb₉ analogues, they crystallize in a new structure type with the orthorhombic space group Ibam (No.72) and feature very complex anion structures, which are composed of unique [Cd₂Sb₆]^12? clusters, dumbbell‐shaped [Sb₂]^4? dimers, and isolated [Sb]^3? anions. For Yb_9.78(1)La_0.97(1)Cd_1.24(1)Sb₉, an extremely low lattice thermal conductivity of 0.29 W m^?1 K^?1 was observed at 875 K, which almost approaches the lowest reported limit of nonglassy or nonionically conducting bulk materials. According to thermogravimetric (TG) and differential scanning calorimetry (DSC) analyses, both compounds show very good thermal stability and no melting or phase transition processes were found below 1173 K. Although related thermoelectric property studies on Yb_9.78(1)La_0.97(1)Cd_1.24(1)Sb₉ only present a maximum ZT of 0.11 at 920 K, owing to its low Seebeck coefficients, these materials are still very promising for their high temperature stability and low thermal conductivity. Furthermore, as mixed cations exist with different charges, it makes this system very flexible in tuning the related electrical properties.     

NaCdSb: An Orthorhombic Zintl Phase with Exceptional Intrinsic Thermoelectric Performance

Many Zintl phases are promising thermoelectric materials owning to their features like narrow band gaps, multiband behaviors, ideal charge transport tunnels, and loosely bound cations. Herein we show a new Zintl phase NaCdSb with exceptional intrinsic thermoelectric performance. Pristine NaCdSb exhibits semiconductor behaviors with an experimental hole concentration of 2.9×10¹⁸ cm⁻³ and a calculated band gap of 0.5 eV. As the temperature increases, the hole concentration rises gradually and approaches its optimal one, leading to a high power factor of 11.56 μW cm⁻¹ K⁻² at 673 K. The ultralow thermal conductivity is derived from the small phonon group velocity and short phonon lifetime, ascribed to the structural anharmonicity of Cd−Sb bonds. As a consequence, a maximum zT of 1.3 at 673 K has been achieved without any doping optimization or structural modification, demonstrating that NaCdSb is a remarkable thermoelectric compound with great potential for performance improvement.     

Synthesis,Structure, and High Temperature Thermoelectric Properties of Yb11Sb9.3Ge0.5

Zintl phase compounds with large unit cells and complex anionic structures such as Yb₁₁Sb₁₀ hold potential for being good thermoelectric materials. Single crystals of Ge‐doped Yb₁₁Sb₁₀ were synthesized using a molten Sn‐flux technique. Single crystal X‐ray diffraction data were obtained and resulted in a composition of Yb₁₁Sb_9.3Ge_0.5 which was verified by microprobe. Yb₁₁Sb_9.3Ge_0.5 is isostructural to Ho₁₁Ge₁₀, crystallizing in a body‐centered, tetragonal unit cell, space group I4/mmm, with Z = 4. The unit cell parameters of Yb₁₁Sb_9.3Ge_0.5 are a = 11.8813(4), c = 17.1276(13) Å with a volume of 2417.8(2) ų. These parameters correlate well with the structural refinement of previously published Yb₁₁Sb₁₀. The structure consists of 16 isolated Sb^3? anions, 8 dumbbells, 2 square planar rings and 44 Yb²⁺ cations. The Ge, doped in at 28 % occupancy, was found to be site specific, residing on the 2 square planar rings. Single crystal X‐ray diffraction is most consistent with the site that makes up the square ring being less than fully occupied. The doped compound is additionally characterized by X‐ray powder diffraction, differential scanning calorimetry and thermogravimetry. High temperature (300–1200 K) thermoelectric properties show that the doped compound has extremely low thermal conductivity (10–30 mW/cmK), lower than that of Yb₁₁Sb₁₀. Temperature dependent resistivity is consistent with a heavily doped semiconductor. Yb₁₁Sb_9.3Ge_0.5 shows p‐type behavior increasing from ～22 μV/K at room temperature to ～31 μV/K at 1140 K. The low value and the temperature dependence of the Seebeck coefficient suggest that bipolar conduction produces a compensated Seebeck coefficient and consequently a low zT.     

Phosphorus Oligomerization in Zintl Phases: Synthesis,Crystal Structure,and Bonding Analysis of Mixed Alkali and Alkaline‐Earth Metal Phosphides

Pnictides α‐Ba₅P₄ and KBa₄P₅ were prepared by melting the elements. The α‐Ba₅P₄ compound crystallizes in the orthorhombic system (Sm₅Ge₄‐type), space group Pnma, Z = 4, a = 8.330(3), b = 16.503(3), c = 8.405(2)Å, it contains two anionic species : P₂^4— dumbbells and P^3—. The KBa₄P₅ compound crystallizes in the tetragonal system, space group P4₃2₁2, Z = 4, a = 8.559(1), c = 16.102(2)Å, it contains trimers P₃^5— and dumbbells P₂^4—. The crystal structures were solved from single crystal X‐ray data and refined by full‐matrix least‐squares to agreement factors R1 = 0.047 and 0.038, respectively. Using ionic charges, α‐Ba₅P₄ is formulated as [5Ba²⁺, 2P^3—, P₂^4—] and KBa₄P₅ as [K⁺, 4Ba²⁺, P₂^4—, P₃^5—]. The level of oligomerisation in these structures depends upon the overall valence electron content, bonding within the anionic oligomers has been analyzed on the basis of EHMO calculations and compared to classical or hypervalent bonding in other phosphide compounds.     

NaSn5: An Intermetallic Compound with Covalent α-Tin and Metallic β-Tin Structure Motifs

A novel and unusual three-dimensional network of tin atoms is present in NaSn₅, in which metallic layers analogous to those in β-Sn alternate with tetravalent units analogous to α-Sn. The compound shows the emergence of pentagonal-dodecahedral units from the metallic β-Sn modification (see structure on the right; all unlabeled spheres are Sn atoms). Quantum-mechanical investigations indicate the simultaneous presence of structural regions with localized and delocalized bonds.     

Intermetallics as zintl phases: Yb2Ga4Ge6 and RE3Ga4Ge6 (RE=Yb, Eu): structural response of a [Ga4Ge6]4- framework to reduction by two electrons

Two new intermetallic compounds, Yb(2)Ga(4)Ge(6) and Yb(3)Ga(4)Ge(6), were obtained from reactions in molten Ga. A third compound, Eu(3)Ga(4)Ge(6), was produced by direct combination of the elements. The crystal structures of these compounds were studied by single-crystal X-ray diffraction. Yb(2)Ga(4)Ge(6) crystallizes in an orthorhombic cell with a=4.1698(7), b=23.254(4), c=10.7299(18) A in the polar space group Cmc2(1). The structure of RE(3)Ga(4)Ge(6) is monoclinic, space group C2/m, with cell parameters a=23.941(6), b=4.1928(11), c=10.918(3) A, beta=91.426(4) degrees for RE=Yb, and a=24.136(2), b=4.3118(4), c=11.017(1) A, beta=91.683(2) degrees for RE=Eu. The refinement [I>2 sigma(I)] converged to the final residuals R(1)/wR(2)=0.0229/0.0589, 0.0411/0.1114, and 0.0342/0.0786 for Yb(2)Ga(4)Ge(6), Yb(3)Ga(4)Ge(6), and Eu(3)Ga(4)Ge(6), respectively. The structures of these two families of compounds can be described by a Zintl concept of bonding, in which the three-dimensional [Ga(4)Ge(6)](n-) framework serves as a host and electron sink for the electropositive RE atoms. The structural relation of RE(3)Ga(4)Ge(6) to of Yb(2)Ga(4)Ge(6) lies in a monoclinic distortion of the orthorhombic cell of Yb(2)Ga(4)Ge(6) and reduction of the [Ga(4)Ge(6)] network by two electrons per formula unit. The results of theoretical calculations of the electronic structure, electrical transport data, and thermochemical and magnetic measurements are also reported.     

尼龙11结构与性能的研究进展

结合作者的研究工作,综述了尼龙11的物理化学性质、晶体结构、晶型转变及压电性的研究进展。     

Structural Principles and Thermoelectric Properties of Polytypic Group 14 Clathrate‐II Frameworks

We have investigated the structural principles and thermoelectric properties of polytypic group 14 clathrate‐II frameworks using quantum chemical methods. The experimentally known cubic 3C polytype was found to be the energetically most favorable framework, but the studied hexagonal polytypes (2 H, 4 H, 6 H, 8 H, 10 H) lie energetically close to it. In the case of germanium, the energy difference between the 3C and 6H clathrate‐II polytypes is ten times smaller than the difference between the experimentally known 3C‐Ge (α‐Ge) and 4H‐Ge polytypes. The thermoelectric properties of guest‐occupied clathrate‐II structures were investigated for compositions Na–Rb–Ga–Ge and Ge–As–I. The clathrate‐II structures show promising thermoelectric properties and the highest Seebeck coefficients and thermoelectric power factors were predicted for the 3C polytype. The structural anisotropy of the largest studied hexagonal polytypes affects their thermoelectric power factors by over a factor of two.     

Structure and magnetic properties of Ca14MnP11

The compound Ca₁₄MnP₁₁ crystallizes in the Ca₁₄AlSb₁₁ structure type with the tetragonal space group I4₁/acd (Z=8) and lattice parameters of , c=20.7565(9) at 90 K. The structure consists of MnP₄⁹⁻ tetrahedron, P₃⁷⁻ trimer, 4 P³⁻ isolated anions and 14 Ca²⁺ cations. Similar to other compounds of this structure type containing phosphorous, the P₃⁷⁻ trimer has a central P atom that is best modeled in the structure as being equally split between two sites. In addition, there is no additional distortion of the manganese-containing tetrahedron compared with the main group analog, Ca₁₄GaP₁₁, suggesting that the Mn oxidation state is Mn²⁺. Temperature-dependent magnetic susceptibility shows that the compound is paramagnetic over the entire temperature range measured (2-300 K). The data can be fit with a modified Curie-Weiss law and provide an effective magnetic moment of 5.80 (2) B.M. with a Weiss constant of −2.13(2) K and . This moment is significantly higher than those measured for any of the Mn-containing analogs and is consistent with Mn²⁺. This result will be discussed in light of the electron counting scheme for Mn compounds of the Ca₁₄AlSb₁₁ structure-type.     

Zintl‐Phase Sr3LiAs2H: Crystal Structure and Chemical Bonding Analysis by the Electron Localizability Approach

The compound Sr₃LiAs₂H was synthesized by reaction of elemental strontium, lithium, and arsenic, as well as LiH as hydrogen source. The crystal structure was determined by single‐crystal X‐ray diffraction: space group Pnma; Pearson symbol oP28; a = 12.0340(7), b = 4.4698(2), c = 12.5907(5) Å; V = 677.2(1) ų; R_F = 0.047 for 1021 reflections and with 36 parameters refined. The positions of the hydrogen atoms were first revealed by the electron localizability indicator and subsequently confirmed by crystal structure refinement. In the crystal structure of Sr₃LiAs₂H the metal atoms are arranged in a Gd₃NiSi₂‐type motif, whereas the hydrogen atoms are arranged in a distorted tetrahedral environment formed by strontium. The calculated band structure revealed that Sr₃LiAs₂H is a semiconductor, which is in agreement with its diamagnetic behavior. Thus, Sr₃LiAs₂H is considered as a (charge‐balanced) Zintl phase.     

窄带隙聚噻吩衍生物复合热电材料的制备及热电性能

合成了窄带隙的聚(3-甲基噻吩对硝基苯甲烯)(PMTNBQ),并研究了其热电性能.通过溶液混合、机械球磨以及冷压成型,制备了具有不同复合比例的PMTNBQ/石墨(G)的复合热电材料.研究了石墨含量对PMTNBQ/G复合材料的热电性能的影响.当石墨含量(质量分数)为90%时,PMTNBQ/G复合热电材料出现了最高的热电优值(ZT)(5.36×10~(-3)).     

Ca3Ag1+xGe3–x (x = 1/3): New Transition Metal Zintl Phase with Intergrowth Structure and Alloying with Aluminum Metal

Abstract. The ternary Zintl phase Ca₃Ag_1+xGe_3–x (x = 1/3) was synthesized by the high‐temperature solid‐state technique and its crystal structure was refined from single‐crystal diffraction data. The compound Ca₃Ag_1.32Ge_2.68(1) adopts the Sc₃NiSi₃ type structure, crystal data: space group C2/m, a = 10.813(1) Å, b = 4.5346(4) Å, c = 14.3391(7) Å, β = 110.05(1)° and V = 660.48(10) ų for Z = 4. Its structure can be interpreted as an intergrowth of fragments cut from the CaGe (CrB‐type) and the CaAg_1+xGe_1–x (TiNiSi‐type) structures, and it therefore represents an alkaline‐earth member of the structure series with the general formula R_2+nT₂X_2+n with n = 4. Unlike the rare‐earth homologues that are fully ordered phases, one seventh of the atomic sites in the unit cell of the title compound are mixed occupied (roughly 2/3Ge and 1/3Ag), and this can be explained by the Zintl concept. The alloying of this phase using aluminum metal yielded the isotypic solid solution Ca₃(Ag/Al)_1+xGe_3–x, in which the aluminum for silver substitution is strictly localized in the TiNiSi substructure, revealing the very different functionality of the two building blocks.     

Evidence of a Mixed Magnetic Phase in EuMgGe: A Semi­metallic Zintl Compound with TiNiSi Structure Type

The ternary Zintl phase EuMgGe was synthesized from the elements, and its structure solved by single‐crystal X‐ray diffraction. Chemical bonding is discussed, by means of electronic structure calculations at the DFT level and its physical properties characterized with respect to electronic conductivity, magnetic susceptibility, specific heat capacity, and magnetoresistivity. The compound may be interpreted according to the Zintl‐Klemm concept as (Eu²⁺)(Mg²⁺)(Ge^4–) with isolated germanium anions. Resistivity measurements reveal a semimetallic character, which is consistent with the vanishing energy gap obtained from our calculations. The magnetic susceptibility and the specific heat indicate that two consecutive transitions take place, at 9 and 16 K, and they show evidence of magnetic frustration. A possible physical scenario for this magnetic behavior is discussed based on known models of partially frustrated magnets.     

Tt‐Tt (Tt = Si,Ge) Dumb‐Bell Structures at Different Valence Electron Concentrations: Ln2MgSi2 (Ln = La,Ce), Yb2Li0.5Ge2, and Yb1.75Mg0.75Si2

The isostructural compounds Yb₂MgSi₂, La_2.05Mg_0.95Si₂, and Ce_2.05Mg_0.95Si₂, as well as Yb₂Li_0.5Ge₂ and Yb_1.75Mg_0.75Si₂, respectively, were synthesized from stoichiometric mixtures of the corresponding elements in sealed Nb‐ ampoules under argon atmosphere. The structures were determined by single crystal X‐ray diffraction: Yb₂MgSi₂ (P4/mbm (No. 127), a = 7.056(1), c = 4.130(1) ų, Z = 2), La_2.05Mg_0.95Si₂ (P4/mbm, a = 7.544(1), c = 4.464(1) ų, Z = 2), and Ce_2.05Mg_0.95Si₂ (P4/mbm, a = 7.425(1), c = 4.370(1) ų, Z = 2), Yb₂Li_0.5Ge₂ (Pnma (No. 62), a = 7.0601(6), b = 14.628(1), c = 7.6160(7) Å, V = 786.5ų, Z = 4), Yb_1.75Mg_0.75Si₂ (Pnma, a = 6.9796(1), b = 14.4009(1), c = 7.5357(1) Å, V = 757.43(2) ų, Z = 4). All compounds contain exclusively Tt‐Tt dumb‐bells (Tt = Si, Ge). The Si‐Si Zintl anions exhibit only very small variations of bond lengths which seem to be more due to cation matrix effects than to effective bond orders.     

Synthesis,Properties and Crystal Structure of A New 12-Molybdogermanic Salt of Lanthanum Coordinated to N -Methyl-2-Pyrrolidone

A new compound [La(NMP) 4 (H 2 O) 4 ][HGeMo 12 O 40 ]·2NMP·3H 2 O (NMP = N -methyl-2-pyrrolidone), 1 , was synthesized and characterized. The compound crystallizes in the monoclinic space group P 2 1 / c with a = 17.3428(4), b = 18.3258(5), c = 23.0387(7) Å, g = 107.088(1)°, V = 6998.9(3) Å 3 and Z = 4. The structure was characterized crystallographically with final R 1 = 0.0589, wR 2 = 0.1596. The crystal structure contains [GeMo 12 O 40 ] 4 m anions combining with [La(NMP) 4 (H 2 O) 4 ] 3+ cations through hydrogen bonds. The La 3+ ion exhibits eight-coordination with four water molecules and four carbonyl oxygen atoms of the organic ligands. Hydrogen bonds are formed between [GeMo 12 O 40 ] 4 m anions and coordinated water molecules, coordinating to water molecules. The anti-tumor activity of 1 was estimated against Hela and P c -3m cancer cells.     

Synthesis and Upconversion Luminescence in LaF3:Yb3+, Ho3+, GdF3: Yb3+, Tm3+ and YF3:Yb3+, Er3+ obtained from Sulfide Precursors

Rare earth fluorides are mainly obtained from aqueous solutions of oxygen‐containing precursors. Probably, this method is simple and efficient, however, oxygen may partially be retained in the fluoride structure. We offer an alternative method: obtaining fluorides and solid solutions based on them from an oxygen‐free precursor. As starting materials, we choose sulfides of rare‐earth elements and solid solutions based on them. The fluorination is carried out by exposure to hydrofluoric acid of various concentrations. The transmission electron microscopy images revealed the different morphologies of the products, which depend on the concentration of the fluorinating component (HF) and the host element. The solid solution particle size varied from 30–35 nm in the case of GdF₃:Yb³⁺, Tm³⁺ (4 % HF) to larger structures with dimensions exceeding 200 nm, such as that for LaF₃:Yb³⁺, Ho³⁺ (40 % HF). The thermal characteristics, such as the temperatures of the transitions and melting and enthalpies, were determined for the solid solutions and simple fluorides. Applicability of the materials obtained as biological luminescent markers was tested on the example of upconversion luminescence, and good upconversion properties were detected.     

The Metallic Zintl Phase Ba3Si4 – Synthesis,Crystal Structure,Chemical Bonding,and Physical Properties

The Zintl phase Ba₃Si₄ has been synthesized from the elements at 1273 K as a single phase. No homogeneity range has been found. The compound decomposes peritectically at 1307(5) K to BaSi₂ and melt. The butterfly‐shaped Si₄⁶⁻ Zintl anion in the crystal structure of Ba₃Si₄ (Pearson symbol tP28, space group P4₂/mnm, a = 8.5233(3) Å, c = 11.8322(6) Å) shows only slightly different Si‐Si bond lengths of d(Si–Si) = 2.4183(6) Å (1×) and 2.4254(3) Å (4×). The compound is diamagnetic with χ ≈ −50 × 10⁻⁶ cm³ mol⁻¹. DC resistivity measurements show a high electrical resistivity (ρ(300 K) ≈ 1.2 × 10⁻³ Ω m) with positive temperature gradient dρ/dT. The temperature dependence of the isotropic signal shift and the spin‐lattice relaxation times in ²⁹Si NMR spectroscopy confirms the metallic behavior. The experimental results are in accordance with the calculated electronic band structure, which indicates a metal with a low density of states at the Fermi level. The electron localization function (ELF) is used for analysis of chemical bonding. The reaction of solid Ba₃Si₄ with gaseous HCl leads to the oxidation of the Si₄⁶⁻ Zintl anion and yields nanoporous silicon.