The high‐temperature tribological properties of Si‐DLC films

The tribological properties of Silicon‐containing diamond‐like‐carbon (Si‐DLC) films, deposited by magnetron sputtering Si target in methane/argon atmosphere, were studied in comparison with diamond‐like‐carbon (DLC) films. The DLC films disappeared because of the oxidation in the air at 500 °C, whereas the Si‐DLC films still remained, implying that the addition of Si improved significantly the thermal stability of DLC films. Retarded hydrogen release from DLC film at high temperature and silicon oxide on the surface might have contributed to lower friction coefficient of the Si‐DLC films both after annealing treatment and in situ high‐temperature environment. Copyright © 2012 John Wiley & Sons, Ltd.     

Structure evolution of hydrogenated carbon films from amorphous carbon to fullerene‐like nanostructure

A–C:H (hydrogenated amorphous carbon) films were deposited by pulsed direct‐current (d.c.) plasma enhanced chemical vapor deposition on silicon substrates. This study investigated the structural and mechanical evolution of the as‐deposited films with fullerene‐like nanostructure. The results showed that pulsed d.c. negative bias (?500 ~ ?1000 V) signally influenced the growth rate, hardness, surface roughness, sp³ content, and friction behavior of the films. As the pulsed d.c. negative bias voltage increased, the sp³ content, surface roughness, hydrogen content and the friction coefficient of the films decreased; however, the growth rate and the hardness increased. The films deposited at ?1000 V with fullerene‐like microstructure display a nanohardness of about 19.7 GPa and the smallest friction coefficient (~0.06). The evolution on mechanical and structural properties of the films are explained by the a–C:H growth mechanism based on the interaction on plasma‐surface interface and the subsurface reactions in the film. Copyright © 2014 John Wiley & Sons, Ltd.     

Effects of negative bias on the structural,topological and tribological properties of amorphous carbon films prepared by magnetron sputtering

Amorphous carbon films were prepared in a magnetron sputtering system at different d.c. negative substrate biases (?50, ? 100, ? 150, ? 200 and ? 250 V). The surface roughness, hardness and tribological properties of as‐deposited films were investigated based on the films' structural evolution. Compared with the films deposited at the negative bias of ? 50 and ? 250 V, the microstructure and bond configuration of the films deposited at negative bias of ? 150 V favored a more graphite‐like structure, which had the maximum of graphiticclusters and ordering structures; meanwhile, the films deposited at bias of ? 150 V showed the minimum coefficient of friction (COF) in air, while the wear rate showed a decrease of two orders of magnitude. The tribotesting results were attributed to the increase of graphitic domains of amorphous carbon films which decreased the interfacial shear force and lowered the COF. The uniform and ordering structure induced steady and smooth friction curves. Copyright © 2010 John Wiley & Sons, Ltd.     

Effects of sputtering current on the bonding structure and mechanical properties of diamond‐like carbon films deposited by MFPUMST

Diamond‐like carbon (DLC) films on glass wafers were produced by middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different sputtering current. The chemical bonding of carbon characterized by Raman spectroscopy and X‐ray photoelectron spectroscopy (XPS) show that the sp³ fraction in DLC films increases with increasing sputtering current from 100 to 300 mA, and then decreases above 300 mA. Mechanical properties like nano‐hardness and elastic recovery for these films under different sputtering currents analyzed by a nano‐indentation technique show the same tendency that nano‐hardness and elastic recovery increase with increasing sputtering current from 100 to 300 mA, and then decrease with increasing sputtering current from 300 to 400 mA. These results indicate that the sp³ fraction in the prepared DLC films is directly related to nano‐hardness and elastic recovery. The results shown above indicate that the parameter of the preparation—sputtering current has a strong influence on the bonding configuration of the deposited DLC films. The mechanism of sputtering current on the sp³ fraction is discussed in this paper. Copyright © 2009 John Wiley & Sons, Ltd.     

Plasma pretreatment of polycarbonate substrates for indium zinc oxide film deposition

The influence of plasma treatment of polycarbonate (PC) substrates on the morphological, electrical, and adhesion properties of deposited amorphous transparent indium zinc oxide (IZO) by direct current magnetron sputtering was investigated by analyzing atomic force microscopy, contact angles, Hall, and nano‐scratch measurements. The surfaces of PC substrates were performed by plasma treatment at various processing times in Ar/O₂ mix atmosphere. The atomic force microscopy images indicated that the microstructure of the substrates considerably influenced the surface morphology of deposited IZO films, and the least surface roughness of IZO was obtained after 5‐s plasma treatment. The IZO film deposited on PC with 5‐s plasma treatment presented an improved electrical conductivity and thermal stability after annealing at 120 °C in air, whereas the significant decrease in carrier concentration and increase in resistivity with extending plasma treatment time were observed, which was attributed to the elevated oxygen adsorption during annealing for a loosely packed structure. Moreover, the adhesion properties of IZO films with PC substrates decreased after 30‐s plasma treatment because of the significant difference on the surface polarity between the PC and thin films and the increased roughness caused by plasma etching. Copyright © 2016 John Wiley & Sons, Ltd.     

Comparative study on structure and properties of titanium/silicon mono‐ and co‐doped amorphous carbon films deposited by mid‐frequency magnetron sputtering

The titanium/silicon mono‐ and co‐doped amorphous carbon films were deposited by mid‐frequency magnetron sputtering Ti target, Si target, and Ti80S20 alloy target, respectively. The effects of doped elements on the composition, surface morphology, microstructure, and mechanical and tribological properties of the films were investigated. The results reveal that the ratio of sp³ and sp² carbon bonds of the films is regulated between 0.28 and 0.62 by a combination of Ti and Si dopant. The addition of small amounts of silicon leads to an increase in sp³ bonds and disorder degree of the sp² carbon. The co‐doped film exhibits significantly superior friction performance than the mono‐doped films. The ultra‐low friction (μ < 0.01) was achieved under a load of 2 N in ambient air with 40% RH. By comparing to the mono‐and co‐doped films, it is thought that the sp³/sp² ratio of the films may play a key role for the superlow friction. Copyright © 2013 John Wiley & Sons, Ltd.     

The tribological performance of fullerene‐like hydrogenated carbon films under ionic liquid lubrication

Fullerene‐like hydrogenated carbon films were deposited on Si substrate by plasma‐enhanced chemical vapor deposition. The microstructures of films were characterized by high‐resolution transmission electron microscopy and Raman spectrum. The tribological performance of films was tested by reciprocating ball‐on‐disc tester under 1‐ethyl‐3‐methylimidazolium tetrafluoroborate ionic liquid. The surface morphology and chemical composition of wear tracks and wear rates were investigated by optical microscope, X‐ray photoelectron spectroscopy, and 3D surface profiler. The results indicated that the film with a typical fullerene‐like structure embedded into the amorphous sp² and sp³ carbon networks could be prepared successfully, and the film shows a higher hardness (26.7 GPa) and elastic recovery (89.9%) compared with the amorphous carbon film. Furthermore, the film shows a lower friction coefficient at low contact load and friction frequency, and excellent wear‐resistance performance at high load and frequency under ionic liquid lubrication. Meanwhile, the wear life of fullerene‐like hydrogenated carbon films could be improved significantly using ionic liquid as a lubrication material. Copyright © 2015 John Wiley & Sons, Ltd.     

Influence of deposition pressure on hydrogenated amorphous carbon films prepared by d.c.‐pulse plasma chemical vapor deposition

Hydrogenated amorphous carbon films (a‐C : H) were prepared by d.c.‐pulse plasma chemical vapor deposition using CH₄ and H₂ gases. The microstructure and hardness of the resulting films were investigated at different deposition pressures (6, 8, 11, 15, and 20 Pa). The growth rate increased sharply from 3.2 to 10.3 nm/min with increasing the pressure from 6 to 20 Pa. According to Raman spectra, XPS, and Fourier transform infrared analysis, the films deposited at the pressure of 6 and 8 Pa have high sp³ content and show typical diamond‐like character. However, the microstructures and bond configuration of the films deposited at 11, 15, and 20 Pa have high sp² content and favored fullerene‐like nanostructure. The hardness and sp² content were shown to reach their minimum values simultaneously at a deposition pressure of 8 Pa and then increased continuously. The film with fullerene‐like nanostructure obtained at 20 Pa displays a high Raman I_D/I_G ratio (~1.6), and low XPS C 1s binding energy (284.4 eV). The microstructural analysis indicates that the films are composed of a hard and locally dense fullerene‐like network, i.e. a predominantly sp²‐bonded material. The rigidity of the films is basically provided by a matrix of dispersed cross‐linked sp² sites. Copyright © 2012 John Wiley & Sons, Ltd.     

Impact of high N2 flow ratio on the chemical and morphological characteristics of sputtered N‐DLC films

Because of their outstanding characteristics, diamond‐like carbon (DLC) thin films have been recognized as interesting materials for a variety of applications. For this reason, the effects of the incorporation of different elements on their fundamental properties have been the focus of many studies. In this work, nitrogen‐incorporated DLC films were deposited on Si (100) substrates by DC magnetron sputtering of a graphite target under a variable N₂ gas flow rate in CH₄ + N₂ + Ar gas mixtures. The influence of high N₂ flow ratios (20, 40 and 60%) on the chemical, structural and morphological properties of N‐DLC films was investigated. Different techniques including field emission gun‐equipped scanning electron microscope (FEG‐SEM), energy‐dispersive X‐ray spectroscopy (EDS), atomic force microscopy (AFM), profilometry, Rutherford backscattering spectrometry (RBS) and Raman spectroscopy (325‐nm and 514‐nm excitation) were used to examine the properties of the N‐DLC films. Thus, the incorporation of nitrogen was correlated with the morphology, roughness, thickness, structure and chemical bonding of the films. Overall, the results obtained indicate that the fundamental properties of N‐DLC films are not only related to the nitrogen content in the film but also to the type of chemical bonds formed. Copyright © 2016 John Wiley & Sons, Ltd.     

Characterisation and properties of magnetron sputtered nanoscale bi‐layered Ni/Ti thin films and effect of annealing

Single‐bi‐layer of Ni–Ti thin film was deposited using DC and RF magnetron sputtering technique by layer‐wise deposition of Ni and Ti on Si(100) substrate in the order of Ni as the bottom layer and Ti as the top layer. The deposition of these amorphous as‐deposited thin films was followed by annealing at 300 °C, 400 °C, 500 °C, and 600 °C temperature with 1‐h annealing time for each to achieve crystalline thin films. This paper describes the fabrication processes and the novel characterization techniques of the as‐deposited as well as the annealed thin films. Microstructures were analysed using FESEM and HRTEM. Nano‐indentation and AFM were carried out to characterize the mechanical properties and surface profiles of the films. It was found that, for the annealing temperatures of 300 °C to 600 °C, the increase in annealing temperature resulted in gradual increase in atomic‐cluster coarsening with improved ad‐atom mobility. Phase analyses, performed by GIXRD, showed the development of silicide phases and intermetallic compounds. Cross‐sectional micrographs exhibited the inter‐diffusion between the two‐layer constituents, especially at higher temperatures, which resulted either in amorphization or in crystallization after annealing at temperatures above 400 °C. Copyright © 2015 John Wiley & Sons, Ltd.     

Evaluation of bias voltage effect on diamond‐like carbon coating properties deposited on tungsten carbide cobalt

Diamond‐like carbon (DLC) coatings are getting new trends for cutting tool applications. In this research work, the DLC coatings were deposited on 15 × 15 × 5‐mm tungsten carbide cobalt substrates with variation of bias voltage from 0 to 500 V. The DLC films of 400 nm were deposited using filter cathode vacuum arc system, and 100‐nm chromium interlayer was deposited by sputtering. The optimized conditions for plasma pretreatment at different argon flow rates and deposition rates with bias variation were found. The effect of bias voltage on microstructure, tribology, adhesion, and mechanical properties were evaluated. The characterization techniques employed were field emission electron microscopy, Raman spectroscopy, wear test, SEM, scratch test, and nano‐indentation. The effect of substrate pretreatment on film adhesion was also evaluated. It was observed that etching rate increased with the increase in Ar flow rate while DLC deposition and sputtering rates decreased with increase in the bias voltage. The characterization suggests the DLC coatings deposited at 0 V bias as optimum condition because of showing the best results among all other conditions. Copyright © 2014 John Wiley & Sons, Ltd.     

Effects of plasma treatments on correlation between chemical structures of DLC films and liquid crystal alignment

In an effort to obtain an improved liquid crystal (LC) alignment layer for liquid crystal display device applications, amorphous diamond‐like carbon thin films were deposited on ITO‐coated glass substrates by an rf magnetron sputtering technique at room temperature and then treated with plasma in various atmospheres. The polarized images and pretilt angles of the LC cells showed that LC alignment was enhanced by post‐plasma treatments of the films. In Raman and X‐ray photoelectron spectroscopy spectra of the films, an increase in the fraction of sp²‐bonding was observed after post‐plasma treatments of the films. In particular, H₂ plasma‐treated film had the largest fraction of sp²‐bonding at the film surface and showed much improved alignment capabilities. These results suggest that π‐bondings of the sp²‐structure at the surface rather than the bulk play an important role in LC alignment.     

Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Titanium dioxide (TiO₂) thin films were deposited onto p‐Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80–200 W. The as‐deposited TiO₂ films were annealed at a temperature of 1023 K. The post‐annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO₂/p‐Si structure were determined from the capacitance–voltage and current–voltage characteristics. X‐ray diffraction studies confirmed that the as‐deposited films were amorphous in nature. After post‐annealing at 1023 K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers > 160 W showed the mixed anatase and rutile phases of TiO₂. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air‐annealed Al/TiO₂/p‐Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO₂/p‐Si (metal‐insulator‐semiconductor) was systematically investigated. Copyright © 2014 John Wiley & Sons, Ltd.     

Bonding structure and mechanical properties of carbon nitride bilayer films with Ti and TiN interlayer

Carbon nitride (CN_x) bilayer films with Ti and TiN interlayer were synthesized by cathode arc technique at various nitrogen pressures (P_N2). The dependences of microstructure and bonding composition of the films on the P_N2 and interlayer were analyzed by Raman spectroscopy and X‐ray photoelectron spectroscopy. Microstructure evolution consisting of the ordering and size of Csp² clusters, the faction of N–sp³/N–sp² bonds and graphite‐like/pyridine‐like configurations was dominated by P_N2, interlayer and annealing. The results showed that Ti and TiN interlayer decrease the atomic ratio of N/C and increase clustering Csp². High P_N2 induces the formation of C ≡ N and C ? N bonds, the increase of sp²‐bonding content and the growth of Csp² clusters. A large part of nitrogen atoms are coordinated with sp²‐hybridized carbon (minimum 71% for annealed CN_x monolayer). TiN/CN_x bilayer had a higher content of pyridine‐like configuration. Morphological characteristics of CN_x monolayer and bilayer mainly depend on the surface character (roughness and surface energy) of the sublayer. The internal stress in the as‐deposited Ti/CN_x bilayer is smaller, but it after annealing is higher than that of CN_x monolayer and TiN/CN_x bilayer. These results may be of interest for studying the CN_x films with controlled bonding composition and expected engineering properties. Copyright © 2014 John Wiley & Sons, Ltd.     

X-ray absorption of nitrogen-doped amorphous carbon films for determining sp2/sp3 bonding concentrations

A method of analyzing X-ray absorption spectra of nitrogen-doped amorphous carbon (a-C) samples was developed to determine their sp² bonding concentrations. The films under consideration are simultaneously deposited onto polytetrafluoroethylene (PTFE) polymer or silicon wafer substrates by hot wire plasma sputtering of graphite. sp² bonding concentrations of a-C films deposited on PTFE increase from 74% to 93% with growing nitrogen doping. Silicon substrate films yield the same general trend, but show that the near surface electronic structure of a-C films depends on the substrate.     

The structure and tribological properties of aluminum/carbon nanocomposite thin films synthesized by reactive magnetron sputtering

Hydrogenated nanocomposite aluminum/carbon thin films (Al/a‐C:H) were fabricated on stainless steel and silicon wafer substrates via unbalanced reactive magnetron sputtering from an Al target in CH₄/Ar plasma. The composition and structure of Al/a‐C:H films were investigated by high‐resolution transmission electron microscope (HRTEM), XPS and micro‐Raman spectroscopy. Nanoindenter, interferometer and ball‐on‐disc tribometer were carried out to evaluate the hardness, internal stress and tribological properties of Al/a‐C:H films. HRTEM observations confirmed that the metallic Al nanocrystallites were uniformly dispersed in the amorphous carbon matrix. XPS and Raman analyses indicated that the sp² content increased with the increase of Al content in the films. Nanoindenter and interferometer tests exhibited that the uniform incorporation of Al nanocrystallites can diminish drastically the magnitude of internal stress with maintaining the higher hardness of as‐deposited films. Especially, the ball‐on‐disc tribometer measurements revealed that the nanocomposite film with 2.3 at.% Al content exhibited relatively better wear resistance and self‐lubrication performance with a friction coefficient of 0.06 and wear rate of 3.1 × 10^?16 m³/ N·m under ambient air, which can be attributed to the relatively higher hardness, the formation of continuous graphitized transfer film on counterface and the reduced reaction of oxygen with carbon. Copyright © 2010 John Wiley & Sons, Ltd.     

Sputter‐deposited Ni/Ti double‐bilayer thin film and the effect of intermetallics during annealing

In the present study, a double bilayer of a Ni/Ti thin film was investigated. A nanoscale NiTi thin film is deposited in a Ni–Ti–Ni–Ti manner to form a double‐bilayer structure on a Si(100) substrate. Ni and Ti depositions were carried out by using d.c. and r.f. power, respectively, in a magnetron sputtering chamber. Four types of bilayers are formed by varying the deposition time of each layer (i.e. 15, 20, 25, and 30 min). The as‐deposited amorphous thin films were annealed at 300, 400, 500, and 600 °C for 1 h to achieve the diffusion in between the layers. Microstructures were analyzed using field‐emission scanning electron microscope and high‐resolution transmission electron microscope. It was found that, with the increase in annealing temperature from 300 to 600 °C, the diffusion at the interface and atomic migration on the surface increase. Cross‐sectional micrographs exhibited the interdiffusion between the two‐layer constituents, especially at higher temperatures, which resulted in diffusion patches along the interface. Phase analyses, performed by grazing incidence X‐ray diffraction, showed the formation of intermetallic compounds with some silicide phases that enhance the mechanical properties. Nanoindentation and atomic force microscopy were carried out to know the mechanical properties and surface profiles of the films. The surface finish is better at higher annealing temperatures. It was found that for annealing temperatures varying from 300 to 600 °C, the increase in annealing temperature resulted in a gradual increase in atomic‐cluster coarsening with improved adatom mobility. Copyright © 2016 John Wiley & Sons, Ltd.     

Nickel containing diamond like carbon thin films

Diamond like carbon (DLC) coatings are well established for multiple applications. The electrical conductivity of DLC or amorphous carbon can be influenced by several orders of magnitude via doping with different metals. Depending on the deposition process hydrogen may be incorporated as well, thereby decreasing the conductivity. Recent investigations of DLC disclose nice piezoresistive properties.Our work was focused on Ni:a-C:H thin films on different substrates by reactive sputtering from a nickel target. Several carbon precursors were added to the sputtering gas to create an amorphous carbon hydrogen network with embedded crystal clusters. In order to optimize the piezoresistive properties we varied various process parameters. The piezoresistive response was monitored by measuring the resistance change during bending. Our Ni:a-C:H films develop gauge factors of approx. 12 in a wide range of process parameters.For sensor applications the temperature coefficient of resistance (TCR) is important as well. It depends on the metal concentration in the thin film and can be adjusted by the concentration of the incorporated nickel. It can be set to approximately zero in a wide temperature range of 80–400 K. The combination of a high gauge factor and a very small TCR is achieved and described in this paper.XRD measurements reveal nickel or nickel carbide clusters with diameters of approx. 8–30 nm depending on the metal concentration. The clusters crystallize in the hexagonal hcp structure which could be transformed into the cubic fcc structure of nickel by thermal annealing in a vacuum.     

Electron field emission of iron and cobalt‐doped DLC films fabricated by electrochemical deposition

Using a simple electrochemical depositing process, iron and cobalt‐doped diamond‐like carbon (DLC) films were deposited on Si (100) substrates. The results showed that metallic elements were inhomogeneously doped into highly cross‐linking amorphous carbon matrix, forming the typical nanocrystalline/amorphous nanocomposite structure, and simultaneously the microsturcture of amorphous carbon was changed by the doping of metals. Field emission performance showed that the incorporation of iron and cobalt effectively decreases the threshold field from 13.5 V/µm to 8.0 V/µm and 6.5 V/µm, respectively, and a highest current density of the Co‐DLC film was about 1.2 mA/cm² at the electric field of 23.5 V/µm. Copyright © 2012 John Wiley & Sons, Ltd.     

Influence of rapid thermal annealing on structure and interfacial characteristic of ZnO thin films

Highly C‐axis oriented ZnO thin film was manufactured by radio‐frequency magnetron sputtering technique on Si (111) substrate. The main objective was to study the influence of rapid thermal annealing (RTA) temperature on the structure and interfacial characteristic of ZnO thin films. X‐ray diffraction results showed that the ZnO thin films annealed at 600 °C by RTA technique had a perfect C‐axis preferred orientation compared to the other ZnO thin films, and the full width at half maximum of ZnO (002) rocking curve measurements indicted that the RTA‐annealed ZnO thin films possessed better crystal structure. Atom force microscopy displayed that the grain size of RTA‐annealed ZnO thin films was fine and uniform compared with the as‐deposited ZnO thin films, although the grains grew in RTA process and the root meant square roughness was smaller than that of as‐deposited films. High‐resolution transmission electron microscopy showed that there was an obvious amorphous layer between ZnO thin films and Si substrate, but the RTA‐annealed ZnO thin films exhibited larger and denser columnar structure and a preferred orientation with highly c axis perpendicular to the amorphous layer. Copyright © 2012 John Wiley & Sons, Ltd.