The effect of dimerization on the magnetoresistance in organic spin valves

The effect of lattice dimerization on the magnetoresistance (MR) in organic spin valves is investigated based on the Su-Schrieffer-Heeger (SSH) model and the Green's function method. By comparing with the results for a uniform chain, we find that the dimerization of the molecular chain modifies the monotonic dependence of the MR on the bias to an oscillatory one. A sign inversion of the MR is observed when the amplitude of the dimerization is adjusted. The results also show that at a low bias, the MR through a dimerized chain decreases with the increasing bias as well as the increasing chain length, which is consistent with the experimental reports. A further understanding can be achieved by analyzing the electronic states and the spin-dependent transmission spectrum with the parallel and antiparallel magnetization orientations of the two ferromagnetic electrodes.     

有机自旋阀的磁电阻性质研究

考虑到有机半导体中极化子和双极化子特殊的电荷-自旋关系,从自旋扩散方程和欧姆定律出发,理论研究了"铁磁/有机半导体/铁磁"有机自旋阀结构中的磁电阻性质.计算发现,磁电阻在数值上随有机半导体层中极化子比率的增加而增大,随有机半导体层厚度的增加而迅速减小.同时发现自旋相关界面电阻能在很大程度上提高系统的磁电阻.讨论了铁磁层和有机半导体电导率比率、铁磁层极化率等对系统磁电阻性质的影响. 关键词： 磁电阻 有机自旋电子学 极化子     

Organic magnetoresistance based on hopping theory

For the organic magnetoresistance(OMAR) effect, we suggest a spin-related hopping of carriers(polarons) based on Marcus theory. The mobility of polarons is calculated with the master equation(ME) and then the magnetoresistance(MR)is obtained. The theoretical results are consistent with the experimental observation. Especially, the sign inversion of the MR under different driving bias voltages found in the experiment is predicted. Besides, the effects of molecule disorder,hyperfine interaction(HFI), polaron localization, and temperature on the MR are investigated.     

The effects of electric and magnetic fields on the current spin polarization and magnetoresistance in a ferromagnetic/organic semiconductor/ferromagnetic（FM/OSC/FM） system

From experimental results of spin polarized injection and transport in organic semiconductors(OSCs),we theoretically study the current spin polarization and magnetoresistance under an electric and a magnetic field in a ferromagnetic/organic semiconductor/ferromagnetic(FM/OSC/FM) sandwich structure according to the spin drift-diffusion theory and Ohm’s law.From the calculations,it is found that the interfacial current spin polarization is enhanced by several orders of magnitude through tuning the magnetic and electric fields by taking into account the specific characteristics of OSC.Furthermore,the effects of the electric and magnetic fields on the magnetoresistance are also discussed in the sandwich structure.     

有机Co/Alq3/La1－xSrxMnO3(LSMO)器件磁电阻的温度效应研究

根据最近关于温度对有机磁电阻影响的实验研究,利用漂移-扩散方程,计入温度对极化子迁移率和自旋弛豫时间的影响,研究了有机半导体中自旋极化率随温度的变化,进而利用Julliere公式给出器件的磁电阻.发现,在温度较低的区域磁电阻减小幅度大于温度较高的区域,磁电阻随温度变化的主要因素为自旋弛豫时间.最后将计算结果与实验数据作了比较,得到与实验相符合的结果. 关键词： 有机自旋电子学 极化子 温度 磁电阻     

Negative tunnelling magnetoresistance in spin filtering magnetic junctions with spin-orbit coupling

We present theoretical calculations of spin transport in spin filtering magnetic tunnelling junctions based on the Landauer-Buttiker formalism and taking into account the spin-orbit coupling(SOC).It is shown that spin-flip scattering induced by SOC is stronger in parallel alignment of magnetization of the ferromegnet barrier(FB) and the ferromagnetic electrode than that in antiparallel case.The increase of negative tunnelling magnetoresistance with bias is in agreement with recent experimental observation.     

Interplay of spin–orbit coupling and superconducting correlations in germanium telluride thin films

There is much current interest in combining superconductivity and spin–orbit coupling in order to induce the topological superconductor phase and associated Majorana‐like quasiparticles which hold great promise towards fault‐tolerant quantum computing. Experimentally these effects have been combined by the proximity‐coupling of super‐conducting leads and high spin–orbit materials such as InSb and InAs, or by controlled Cu‐doping of topological insu‐lators such as Bi₂Se₃. However, for practical purposes, a single‐phase material which intrinsically displays both these effects is highly desirable. Here we demonstrate coexisting superconducting correlations and spin–orbit coupling in molecular‐beam‐epitaxy‐grown thin films of GeTe. The former is evidenced by a precipitous low‐temperature drop in the electrical resistivity which is quelled by a magnetic field, and the latter manifests as a weak antilocalisation (WAL) cusp in the magnetotransport. Our studies reveal several other intriguing features such as the presence of two‐dimensional rather than bulk transport channels below 2 K, possible signatures of topological superconductivity, and unexpected hysteresis in the magnetotransport. Our work demonstrates GeTe to be a potential host of topological SC and Majorana‐like excitations, and to be a versatile platform to develop quantum information device architectures. (© 2016 The Authors. Phys. Status Solidi RRL published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

铁磁/有机半导体/铁磁系统的电流自旋极化性质研究

根据有机半导体中的电流自旋极化注入和输运实验现象，理论上研究了铁磁/有机半导体/铁磁系统的电流自旋极化性质.考虑到有机半导体的具体特性，从自旋扩散理论和欧姆定律出发，得到了系统的电流自旋极化率.假设自旋极化子和不带自旋的双极化子为有机半导体中的载流子.通过计算发现，极化子为实现有机半导体中电流极化注入和输运的有效自旋载流子，即使它只占总载流子很少一部分.还进一步研究了自旋相关界面电阻和电导率匹配以及有机半导体长度等因素对系统电流自旋极化的影响. 关键词： 自旋电子学 自旋注入 有机半导体 极化子     

The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors.A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current.The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron-hole pairs,and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field.The field dependence,the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron-hole pairs.The simulated magnetoresistance shows good consistency with the experimental results.     

Spin Hall magnetoresistance in Nb/Y3Fe5O12 hybrids

We investigate the spin Hall magnetoresistance (SMR) in niobium (Nb) attached to Y₃Fe₅O₁₂ near the superconducting critical temperature (T_c) of Nb. The SMR vanishes after cooling the sample below T_c, and recovers if the temperature is raised. When a magnetic field larger than the critical field of Nb is applied, the SMR re‐emerges with an enhanced magnitude even if the temperature is below T_c. The experimental results demonstrate that the SMR could be completely suppressed by the coupling between superconducting condensation and spin–orbit interaction in superconductors. In addition to the fundamental physics on the charge–spin interactions in superconductors, our work adds a different dimension to superconducting spintronics. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Study of magnetoresistance and conductance of bicrystal grain boundary in La0.67Ba0.33MnO3 thin film

La_0.67Ba_0.33MnO₃ (LBMO) thin film is deposited on a 36.7°C SrTiO₃ bicrystal substrate using laser ablation technique. A microbridge is created across bicrystal grain boundary and its characteristics are compared with a microbridge on the LBMO film having no grain boundary. Presence of grain boundary exhibits substantial magnetoresistance ratio (MRR) in the low field and low temperature region. Bicrystal grain boundary contribution in MRR disappears at temperature T>175 K. At low temperature, I-V characteristic of the microbridge across bicrystal grain boundary is nonlinear. Analysis of temperature dependence of dynamic conductance-voltage characteristics of the bicrystal grain boundary indicates that at low temperatures (T<175 K) carrier transport across the grain boundary in LBMO film is dominated by inelastic tunneling via pairs of manganese atoms and tunneling through disordered oxides. At higher temperatures (T>175 K), magnetic scattering process is dominating. Decrease of bicrystal grain boundary contribution in magnetoresistance with the increase in temperature is due to enhanced spin-flip scattering process.     

对称抛物势阱磁性隧道结中的自旋输运及磁电阻效应

研究了两端具有铁磁接触的对称抛物势阱磁性隧道结(F/SPW/F)中自旋相关的隧穿概率和隧穿磁电阻,讨论了量子尺寸效应和Rashba 自旋轨道耦合作用对自旋极化输运特性的影响.研究结果表明:隧穿概率和隧穿磁电阻随抛物势阱宽度的增加发生周期性的振荡.抛物势阱深度的增加减小了隧穿概率和隧穿磁电阻的振荡频率.Rashba 自旋轨道耦合强度的增加加大了隧穿概率和隧穿磁电阻的振荡频率.隧穿概率和隧穿磁电阻的振幅和峰谷比强烈依赖于两铁磁电极中磁化方向的夹角. 关键词： 磁性隧道结 Rashba 自旋轨道耦合 隧穿概率 隧穿磁电阻     

Giant magnetoresistance and hysteretic effects in hybrid semiconductor/ferromagnet devices

We have investigated ballistic magnetoresistance effects in a two dimensional electron gas subjected to a periodic magnetic field that alternates in sign. The magnetic field was produced by a submicron ferromagnetic grating, made of either nickel or cobalt stripes, which was fabricated at the surface of the heterostructure. We observe giant magnetoresistance effects due to the channelling of electrons along lines of zero magnetic field orientated perpendicular to the current. Our semiclassical model accounts in great detail for all features in the magnetoresistance.     

Probe‐assisted spin manipulation in one‐dimensional quantum dots

We study a spin structure that arises in a one‐dimensional quantum dot with zero total spin under the action of a charged tip of a scanning probe microscope in the presence of a weak magnetic field. The evolution of spin structure with changing the probe position is traced to show that the movable probe can be an effective tool to manipulate the spin. The spin structures are formed when the probe is located in certain regions along the dot due to Coulomb interaction of electrons as they are redistributed between the two sections in which the quantum dot is divided by the potential barrier created by the probe. There are two main states: spin‐polarized and non‐polarized ones. The transition between them is accompanied by a spin precession governed by the Rashba spin–orbit interaction induced by the electric field of the probe. In the transition region the spin density changes strongly while charge distribution remains nearly unchanged. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Length dependence of rectification in organic co-oligomer spin rectifiers

The rectification ratio of organic magnetic co-oligomer diodes is investigated theoretically by changing the molecular length. The results reveal two distinct length dependences of the rectification ratio: for a short molecular diode, the chargecurrent rectification changes little with the increase of molecular length, while the spin-current rectification is weakened sharply by the length; for a long molecular diode, both the charge-current and spin-current rectification ratios increase quickly with the length. The two kinds of dependence switch at a specific length accompanied with an inversion of the rectifying direction. The molecular ortibals and spin-resolved transmission analysis indicate that the dominant mechanism of rectification suffers a change at this specific length, that is, from asymmetric shift of molecular eigenlevels to asymmetric spatial localization of wave functions upon the reversal of bias. This work demonstrates a feasible way to control the rectification in organic co-oligomer spin diodes by adjusting the molecular length.     

超巨磁电阻薄膜在光探测上的新应用

混合价态钙钛矿锰氧化物在外界温度变化和磁场作用下表现出巨大的磁电阻(colossal magnetoreslstance，简记为CMR)效应，引起了人们的广泛关注．由于CMR材料在传感器、探测器以及硬盘读出磁头等应用器件研发上极具潜力，科学家们对其进行了大量研究．文章在简单介绍CMR材料结构和机理的基础上，着重报道了作者利用CMR薄膜的激光感生热电电势(LITV)制备激光功率／能量探测器和利用电阻在室温附近的巨大变化研制光热辐射探测器(bolometer)方面的新进展．     

Spin-excited states and rectification in an organic spin rectifier

Spin-excited states in an asymmetric magnetic organic co-oligomer diode are investigated theoretically. The results demonstrate that the structural asymmetry of the co-oligomer is modulated by the spin-excited states, which is embodied in the wave functions of the eigenstates as well as the spin density wave. By calculating the transport property, a robust spin-current rectification concomitant with a charge-current rectification is observed in all spin-excited states. However, the current through the diode is suppressed distinctly by the spin-excited states, while the rectification ratios may be reduced or enhanced depending on the bias and the excited spins. The intrinsic mechanism is analyzed from the spin-dependent trans- mission combined with the change of molecular eigenstates under bias. Finally, the temperature-induced spin excitation is simulated. Significant rectification behavior is obtained even at room temperature.     

Separating positive and negative magnetoresistance in organic semiconductor devices

We study the transition between positive and negative organic magnetoresistance (OMAR) in tris-(8 hydroxyquinoline) aluminium (Alq_{3}), in order to identify the elementary mechanisms governing this phenomenon. We show how the sign of OMAR changes as function of the applied voltage and temperature. The transition from negative to positive magnetoresistance (MR) is found to be accompanied by an increase in slope of log(I) versus log(V). ac admittance measurements show this transition coincides with the onset of minority charge (hole) injection in the device. All these observations are consistent with two simultaneous contributions with opposite sign of MR, which may be assigned to holes and electrons having different magnetic field responses.     

Origin of large spin Hall magnetoresistance in Fe/CuOx bilayers

We have compared the spin Hall magnetoresistance (SMR) in Fe/Pt and Fe/CuO_x (with natural oxidation) bilayers with varying the thickness of Fe layer. A larger SMR in Fe/CuO_x bilayers has been found when the thickness of Fe layer is 3 nm. Moreover, the SMR of the two bilayers decrease with increasing the thickness of Fe from 3 nm to 10 nm, but that of Fe/CuO_x drops more sharply due to shunting current effect. Through harmonic measurements, the emergent spin current is proved to be generated in the Fe/CuO_x bilayers. The mixed phase of CuO_x has been confirmed including CuO, Cu₂O and Cu, which performs strong spin-orbit coupling and produce large spin current. On the other hand, the interface-generated spin current should be ruled out. All the results have been compared with those in Fe/Al₂O₃ bilayers with negligible spin current.