Scanning transmission X‐ray microscopy probe for in situ mechanism study of graphene‐oxide‐based resistive random access memory

Here, an in situ probe for scanning transmission X‐ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K‐ and O K‐edges, both the RRAM junctions and the I₀ junction were fabricated on a single Si₃N₄ membrane to obtain local XANES spectra at these absorption edges with more delicate I₀ normalization. Using this probe combined with the synchrotron‐based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K‐edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies.     

Resistive switching memory for high density storage and computing

The resistive random access memory (RRAM) has stimulated a variety of promising applications including programmable analog circuit, massive data storage, neuromorphic computing, etc. These new emerging applications have huge demands on high integration density and low power consumption. The cross-point configuration or passive array, which offers the smallest footprint of cell size and feasible capability of multi-layer stacking, has received broad attention from the research community. In such array, correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring cells. This target requires nonlinear I-V characteristics of the memory cell, which can be realized by either adding separate selector or developing implicit build-in nonlinear cells. The performance of a passive array largely depends on the cell nonlinearity, reliability, on/off ratio, line resistance, thermal coupling, etc. This article provides a comprehensive review on the progress achieved concerning 3D RRAM integration. First, the authors start with a brief overview of the associative problems in passive array and the category of 3D architectures. Next, the state of the arts on the development of various selector devices and self-selective cells are presented. Key parameters that influence the device nonlinearity and current density are outlined according to the corresponding working principles. Then, the reliability issues in 3D array are summarized in terms of uniformity, endurance, retention, and disturbance. Subsequently, scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed, and applications of 3D RRAM beyond storage, such as neuromorphic computing and CMOL circuit are discussed later. Summary and outlooks are given in the final.     

Interface‐engineered resistive memory using plasma‐modified electrode on polyimide substrate

In this study, we report a low power Ni/GeO_x /TiO_y /TaN resistive random access memory (RRAM) using plasma‐modified electrode. The low sub‐mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high‐temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta–N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high‐temperature current distribution.

     

Nanoscale C‐Rich SixC1−x Bus/Ring Waveguide Based Cross‐Wavelength Data Converter

The carbon‐rich silicon carbide (C‐rich Si_xC_1?x) micro‐ring channel waveguide with asymmetric core aspect is demonstrated for all‐optical cross‐wavelength pulsed return‐to‐zero on‐off keying (PRZ‐OOK) data conversion. Enhanced nonlinear optical Kerr switching enables 12‐Gbit per second data processing with optimized modulation depth. The inverse tapered waveguide at end‐face further enlarges the edge‐coupling efficiency, and the asymmetric channel waveguide distinguishes the polarization modes. To prevent data shape distortion, the bus/ring gap spacing is adjusted to control the quality factor (Q‐factor) of the micro‐ring. Designing the waveguide cross section at 500 × 350 nm² provides the C‐rich Si_xC_1?x channel waveguide to induce strong transverse electric mode (TE‐mode) confinement with a large Kerr nonlinearity of 2.44 × 10^?12 cm² W^?1. Owing to the trade‐off between the Q‐factor and the on/off extinction ratio, the optimized bus/ring gap spacing of 1400 nm is selected to provide a coupling ratio at 5–6% for compromising the modulation depth and the switching throughput. Such a C‐rich Si_xC_1?x micro‐ring with asymmetric channel waveguide greatly enhances the cross‐wavelength data conversion efficiency to favor its on‐chip all‐optical data processing applications for future optoelectronic interconnect circuits.     

High‐performance In–Zn–O thin‐film transistors with a soluble processed ZrO2 gate insulator

Spin‐coated zirconium oxide films were used as a gate dielectric for low‐voltage, high performance indium zinc oxide (IZO) thin‐film transistors (TFTs). The ZrO₂ films annealed at 400 °C showed a low gate leakage current density of 2 × 10^–8 A/cm² at an electric field of 2 MV/cm. This was attributed to the low impurity content and high crystalline quality. Therefore, the IZO TFTs with a soluble ZrO₂ gate insulator exhibited a high field effect mobility of 23.4 cm²/V s, excellent subthreshold gate swing of 70 mV/decade and a reasonable I_on/off ratio of ～10⁶. These TFTs operated at low voltages (～3.0 V) and showed high drain current drive capability, enabling oxide TFTs with a soluble processed high‐k dielectric for use in backplane electronics for low‐power mobile display applications. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Sub-micro watt resistive memories using nano-crystallized aluminum oxynitride dielectric

Using nano-crystallized aluminum oxynitride (nc-AlO_xN_y) dielectric, the Al/nc-AlO_xN_y/AlN/n⁺-Si resistive random access memory (RRAM) with ultralow sub-micro watt power is reported in this study. The RRAM devices exhibit excellent memory characteristics, including reproducible bipolar resistive switching under >100 times memory window, very low set and reset current of ~10 nA, high voltage distributions and good data retention. It is demonstrated that the reset current decreases as the compliance current decreases, which provides an approach to lower the power consumption. The conduction mechanisms for high- and low-resistance states are dominated by Frenkel–Poole conduction and space-charge-limited current, respectively. These good memory characteristics in this RRAM show great potential in future high-performance memory applications.     

Palladium‐catalyzed cyclization of 2‐alkynyl‐N‐ethanoyl anilines to indoles: synthesis,structural, spectroscopic,and mechanistic study

This study reports a facial regio‐selective synthesis of 2‐alkyl‐N‐ethanoyl indoles from substituted‐N‐ethanoyl anilines employing palladium (II) chloride, which acts as a cyclization catalyst. The mechanistic trait of palladium‐based cyclization is also explored by employing density functional theory. In a two‐step mechanism, the palladium, which attaches to the ethylene carbons, promotes the proton transfer and cyclization. The gas‐phase barrier height of the first transition state is 37 kcal/mol, indicating the rate‐determining step of this reaction. Incorporating acetonitrile through the solvation model on density solvation model reduces the barrier height to 31 kcal/mol. In the presence of solvent, the electron‐releasing (–CH₃) group has a greater influence on the reduction of the barrier height compared with the electron‐withdrawing group (–Cl). These results further confirm that solvent plays an important role on palladium‐catalyzed proton transfer and cyclization. For unveiling structural, spectroscopic, and photophysical properties, experimental and computational studies are also performed. Thermodynamic analysis discloses that these reactions are exothermic. The highest occupied molecular orbital?lowest unoccupied molecular orbital gap (4.9–5.0 eV) confirms that these compounds are more chemically reactive than indole. The calculated UV–Vis spectra by time‐dependent density functional theory exhibit strong peaks at 290, 246, and 232 nm, in good agreement with the experimental results. Moreover, experimental and computed ¹H and ¹³C NMR chemical shifts of the indole derivatives are well correlated. Copyright © 2015 John Wiley & Sons, Ltd.     

A miniature X‐ray tube approach to measuring lead in bone using L‐XRF

Using a miniature X‐ray tube and silicon PiN diode detector, an approach to measuring lead (Pb) in bone phantoms was tested. The X‐ray tube was used to excite L‐line X‐ray fluorescence (L‐XRF) of lead in bone phantoms. The bone phantoms were made from plaster of Paris and dosed with varying quantities of lead. Phantoms were made in two sets with different shapes to model different bone surfaces. One set of bone phantoms was circular in cross‐section (2.5‐cm diameter), the other square in cross‐section (2.2 cm × 2.2 cm). Using an irradiation time of 180 s (real time), five trials were run for each bone phantom. Analysis was performed for both Lα and Lβ lead X‐rays. Based on these calibration trials, (3σ₀/slope) minimum detection limits of 7.4 ± 0.3 µg Pb g^?1 (circular cross‐section) and 8.6 ± 0.6 µg Pb g^?1 (square cross‐section) were determined for the bare bone phantoms. To simulate a more realistic in vivo scenario with soft tissue overlying bone, further trials were performed with a resin material placed between the experimental system and the bone phantom. For the square cross‐section bone phantoms, a layer of resin with a thickness of 1.2 mm was used, and a minimum detection limit of 17 ± 3 µg Pb g^?1 determined. For the circular cross‐section phantoms, a layer of resin with an average thickness of 2.7 mm was used. From these, a more realistic minimum detection limit for in vivo applications (43 ± 7 µg Pb g^?1) was determined. Copyright © 2011 John Wiley & Sons, Ltd.     

A dedicated small‐angle X‐ray scattering beamline with a superconducting wiggler source at the NSRRC

At the National Synchrotron Radiation Research Center (NSRRC), which operates a 1.5 GeV storage ring, a dedicated small‐angle X‐ray scattering (SAXS) beamline has been installed with an in‐achromat superconducting wiggler insertion device of peak magnetic field 3.1 T. The vertical beam divergence from the X‐ray source is reduced significantly by a collimating mirror. Subsequently the beam is selectively monochromated by a double Si(111) crystal monochromator with high energy resolution (ΔE/E? 2 × 10^?4) in the energy range 5–23 keV, or by a double Mo/B₄C multilayer monochromator for 10–30 times higher flux (～10¹¹ photons s^?1) in the 6–15 keV range. These two monochromators are incorporated into one rotating cradle for fast exchange. The monochromated beam is focused by a toroidal mirror with 1:1 focusing for a small beam divergence and a beam size of ～0.9 mm × 0.3 mm (horizontal × vertical) at the focus point located 26.5 m from the radiation source. A plane mirror installed after the toroidal mirror is selectively used to deflect the beam downwards for grazing‐incidence SAXS (GISAXS) from liquid surfaces. Two online beam‐position monitors separated by 8 m provide an efficient feedback control for an overall beam‐position stability in the 10 µm range. The beam features measured, including the flux density, energy resolution, size and divergence, are consistent with those calculated using the ray‐tracing program SHADOW. With the deflectable beam of relatively high energy resolution and high flux, the new beamline meets the requirements for a wide range of SAXS applications, including anomalous SAXS for multiphase nanoparticles (e.g. semiconductor core‐shell quantum dots) and GISAXS from liquid surfaces.     

Theoretical investigations on 4,4′,5,5′‐tetranitro‐2,2′‐1H,1′H‐2,2′‐biimidazole derivatives as potential nitrogen‐rich high energy materials

The ―NH₂, ―NO₂, ―NHNO₂, ―C(NO₂)₃ and ―CF(NO₂)₂ substitution derivatives of 4,4′,5,5′‐tetranitro‐2,2′‐1H,1′H‐2,2′‐biimidazole were studied at B3LYP/aug‐cc‐pVDZ level of density functional theory. The crystal structures were obtained by molecular mechanics (MM) methods. Detonation properties were evaluated using Kamlet–Jacobs equations based on the calculated density and heat of formation. The thermal stability of the title compounds was investigated via the energy gaps (?E_{LUMO ? HOMO}) predicted. Results show that molecules T5 (D = 10.85 km·s^?1, P = 57.94 GPa) and T6 (D = 9.22 km·s^?1, P = 39.21 GPa) with zero or positive oxygen balance are excellent candidates for high energy density oxidizers (HEDOs). All of them appear to be potential explosives compared with the famous ones, octahydro‐1,3,5,7‐tetranitro‐1,3,5,7‐tetraazocane (HMX, D = 8.96 km·s^?1, P = 35.96 GPa) and hexanitrohexaazaisowurtzitane (CL‐20, D = 9.38 km·s^?1, P = 42.00 GPa). In addition, bond dissociation energy calculation indicates that T5 and T6 are also the most thermally stable ones among the title compounds. Copyright © 2014 John Wiley & Sons, Ltd.     

All‐optical modulation based on silicon quantum dot doped SiOx:Si‐QD waveguide

All‐optical modulation based on silicon quantum dot doped SiO_x:Si‐QD waveguide is demonstrated. By shrinking the Si‐QD size from 4.3 nm to 1.7 nm in SiO_x matrix (SiO_x:Si‐QD) waveguide, the free‐carrier absorption (FCA) cross section of the Si‐QD is decreased to 8 × 10⁻¹⁸ cm² by enlarging the electron/hole effective masses, which shortens the PL and Auger lifetime to 83 ns and 16.5 ps, respectively. The FCA loss is conversely increased from 0.03 cm⁻¹ to 1.5 cm⁻¹ with the Si‐QD size enlarged from 1.7 nm to 4.3 nm due to the enhanced FCA cross section and the increased free‐carrier density in large Si‐QDs. Both the FCA and free‐carrier relaxation processes of Si‐QDs are shortened as the radiative recombination rate is enlarged by electron–hole momentum overlapping under strong quantum confinement effect. The all‐optical return‐to‐zero on‐off keying (RZ‐OOK) modulation is performed by using the SiO_x:Si‐QD waveguides, providing the transmission bit rate of the inversed RZ‐OOK data stream conversion from 0.2 to 2 Mbit/s by shrinking the Si‐QD size from 4.3 to 1.7 nm.     

Fully room‐temperature‐fabricated TiN/TaOx/Pt nonvolatile memory devices

The reliable resistive switching properties of TiN/TaO_x/Pt structures fabricated with a fully room‐temperature process are demonstrated in this letter. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to 10⁵ cycles. No data loss was reported upon continuous readout for more than 10⁴ s at 125 °C. Multilevel storage is feasible due to the dependence of the low resistance state (LRS) on the initial “SET” (switch from high to low RS) compliance current. The values of LRS showed no dependence on the size of the device, which correlated with the localized conductive filament mechanism. This nonvolatile multilevel memory effect and the fully room‐temperature fabrication process make the TiN/TaO_x/Pt memory devices promising for future nonvolatile memory application. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

1,5‐electrocyclization versus 1,5‐proton shift in imidazolium allylides and 2‐phospha‐allylides: a DFT investigation

The competitive 1,5‐electrocyclization versus intramolecular 1,5‐proton shift in imidazolium allylides and imidazolium 2‐phosphaallylides has been investigated theoretically at the DFT (B3LYP/6‐311 + +G**//B3LYP/6‐31G**) level. 1,5‐Electrocyclization follows pericyclic mechanism and its activation barrier is lower than that for the pseudopericyclic mechanism by ～5–6 kcal mol^?1. The activation barriers for 1,5‐electrocyclization of imidazolium 2‐phosphaallylides are found to be smaller than those for their nonphosphorus analogues by ～3–5 kcal mol^?1. There appears to be a good correlation between the activation barrier for intramolecular 1,5‐proton shift and the density of the negative charge at C8, except for the ylides having fluorine substituent at this position ( 7b and 8b ). The presence of fluorine atom reduces the density of the negative charge at C8 (in 7b it becomes positively charged) and thus raises the activation barrier. The ylides 7f and 8f having CF₃ group at C8, in preference to the 1,5‐proton shift, follow an alternative route leading to different carbenes which is accompanied by the loss of HF. The carbenes Pr _{7 , 8b – e} resulting from intramolecular 1,5‐proton shift have a strong tendency to undergo intramolecular S_N2 type reaction, the activation barrier being 7–28 kcal mol^?1. Copyright © 2011 John Wiley & Sons, Ltd.     

Liquid‐Crystal‐Mediated Self‐Assembly of Porous α‐Fe2O3 Nanorods on PEDOT:PSS‐Functionalized Graphene as a Flexible Ternary Architecture for Capacitive Energy Storage

A novel aqueous‐based self‐assembly approach to a composite of iron oxide nanorods on conductive‐polymer (CP)‐functionalized, ultralarge graphene oxide (GO) liquid crystals (LCs) is demonstrated here for the fabrication of a flexible hybrid material for charge capacitive application. Uniform decoration of α‐Fe₂O₃ nanorods on a poly(3,4‐ethylene‐dioxythiophene): poly(styrenesulfonate) (PEDOT:PSS)‐functionalized, ultralarge GO scaffold results in a 3D interconnected layer‐by‐layer (LBL) architecture. This advanced interpenetrating network of ternary components is lightweight, foldable, and possesses highly conductive pathways for facile ion transportation and charge storage, making it promising for high‐performance energy‐storage applications. Having such structural merits and good synergistic effects, the flexible architecture exhibits a high specific discharge capacitance of 875 F g^?1 and excellent volumetric specific capacitance of 868 F cm^?3 at 5 mV s^?1, as well as a promising energy density of 118 W h kg^?1 (at 0.5 A g^?1) and promising cyclability, with capacity retention of 100% after 5000 charge–discharge (CD) cycles. This synthesis method provides a simple, yet efficient approach for the solution‐processed LBL insertion of the hematite nanorods (HNR) into CP‐functionalized novel composite structure. It provides great promise for the fabrication of a variety of metal‐oxide (MO)‐nanomaterial‐based binder and current collector‐free flexible composite electrodes for high‐performance energy‐storage applications.     

Lithium solvation in a PMMA membrane plasticized by a lithium‐conducting ionic liquid based on 1‐butyl‐3‐methylimidazolium bis(trifluoromethanesulfonyl)imide

The Raman and Infrared (IR) spectra of poly(methyl methacrylate) (PMMA) membranes plasticized by ionic liquids of the (1 − x)[1‐butyl‐3‐methylimidazolium bis(trifluoromethanesulfonyl)imide (BMITFSI)],xLiTFSI type, where BMI⁺ is the 1‐butyl‐3‐methylimidazolium cation and TFSI⁻ the bis(trifluoromethanesulfonyl)imide anion, are analyzed for a lithium bis(trifluoromethane sulfone)imide (LiTFSI) mole fraction x = 0.23 and PMMA contents from 0 to 50 wt%. The lithium is found to have an average coordination of about three CO groups and less than one TFSI⁻ anion. It plays the role of a cross‐linker between the ester groups of PMMA and the nonvolatile ionic liquid. Addition of PMMA to the (1 − x)(BMITFSI),xLiTFSI ionic liquid lowers the conductivity but might improve the lithium transference number by transforming the [Li(TFSI)₂]⁻ anionic clusters present in the pure ionic liquid into a mixed coordination by ester groups and TFSI⁻ anions. Copyright © 2008 John Wiley & Sons, Ltd.     

Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure

In this study, we report a resistive random access memory (RRAM) using trilayer SiO_x/a-Si/TiO_y film structure. The low switching energy of <10 pJ, highly uniform current distribution (<13% variation), fast 50-ns speed and stable cycling endurance for 10⁶ cycles are simultaneously achieved in this RRAM device. Such good performance can be ascribed to the use of interface-engineered dielectric stack with 1D1R-like structure. The SiO_x tunnel barrier in contact with top Ni electrode to form diode-like rectifying element not only lowers self-compliance switching currents, but also improves cycling endurance, which is favorable for the application of high-density 3D memory.     

Theoretical studies on structure and performance of [1,2,5]‐oxadiazolo‐[3,4‐d]‐pyridazine‐based derivatives

Based on energetic compound [1,2,5]‐oxadiazolo‐[3,4‐d]‐pyridazine, a series of functionalized derivatives were designed and first reported. Afterwards, the relationship between their structure and performance was systematically explored by density functional theory at B3LYP/6‐311 g (d, p) level. Results show that the bond dissociation energies of the weakest bond (N–O bond) vary from 157.530 to 189.411 kJ · mol^?1. The bond dissociation energies of these compounds are superior to that of HMX (N–NO_2, 154.905 kJ · mol^?1). In addition, H1, H2, H4, I2, I3, C1, C2, and D1 possess high density (1.818–1.997 g · cm^?3) and good detonation performance (detonation velocities, 8.29–9.46 km · s^?1; detonation pressures, 30.87–42.12 GPa), which may be potential explosives compared with RDX (8.81 km · s^?1, 34.47 GPa ) and HMX (9.19 km · s^?1, 38.45 GPa). Finally, allowing for the explosive performance and molecular stability, three compounds may be suggested as good potential candidates for high‐energy density materials. Copyright © 2016 John Wiley & Sons, Ltd.     

Unusual conformational preferences of 1,3‐dimethyl‐3‐isopropoxy‐3‐silapiperidine

The conformational analysis of the first representative of the Si‐alkoxy substituted six‐membered Si,N‐heterocycles, 1,3‐dimethyl‐3‐isopropoxy‐3‐silapiperidine, was performed by low‐temperature ¹H and ¹³C NMR spectroscopy and DFT theoretical calculations. In contrast to the expectations from the conformational energies of methyl and alkoxy substituents, the Me_axi‐PrO_eq conformer was found to predominate in the conformational equilibrium in the ratio Me_axi‐PrO_eq : Me_eqi‐PrO_ax of ca. 2 : 1 as from the ¹H and ¹³C NMR study. The thermodynamic parameters obtained by the complete line shape analysis showed that the main contribution to the barrier to ring inversion originates from the entropy term of the free energy of activation. Copyright © 2012 John Wiley & Sons, Ltd.     

Homo‐Diels–Alder reaction of a very inactive diene,bicyclo[2,2,1]hepta‐2,5‐diene,with the most active dienophile, 4‐phenyl‐1,2,4‐triazolin‐3,5‐dione. Solvent,temperature, and high pressure influence on the reaction rate

Solvent, temperature, and high pressure influence on the rate constant of homo‐Diels–Alder cycloaddition reactions of the very active hetero‐dienophile, 4‐phenyl‐1,2,4‐triazolin‐3,5‐dione (1), with the very inactive unconjugated diene, bicyclo[2,2,1]hepta‐2,5‐diene (2), and of 1 with some substituted anthracenes have been studied. The rate constants change amounts to about seven orders of magnitude: from 3.95^.10^?3 for reaction (1+2) to 12200 L mol^?1 s^?1 for reaction of 1 with 9,10‐dimethylanthracene (4e) in toluene solution at 298 K. A comparison of the reactivity (ln k₂) and the heat of reactions (?_r‐nH) of maleic anhydride, tetracyanoethylene and of 1 with several dienes has been performed. The heat of reaction (1+2) is ?218 ± 2 kJ mol^?1, of 1 with 9,10‐dimethylanthracene ?117.8 ± 0.7 kJ mol^?1, and of 1 with 9,10‐dimethoxyanthracene ?91.6 ±0.2 kJ mol^?1. From these data, it follows that the exothermicity of reaction (1+2) is higher than that with 1,3‐butadiene. However, the heat of reaction of 9,10‐dimethylanthracene with 1 (?117.8 kJ mol^?1) is nearly the same as that found for the reaction with the structural C=C counterpart, N‐phenylmaleimide (?117.0 kJ mol^?1). Since the energy of the N=N bond is considerably lower (418 kJ/bond) than that of the C=C bond (611 kJ/bond), it was proposed that this difference in the bond energy can generate a lower barrier of activation in the Diels–Alder cycloaddition reaction with 1. Linear correlation (R = 0.94) of the solvent effect on the rate constants of reaction (1+2) and on the heat of solution of 1 has been observed. The ratio of the volume of activation (?V^≠) and the volume of reaction (?V_r‐n) of the homo‐Diels–Alder reaction (1+2) is considered as “normal”: ?V^≠/?V_r‐n = ?25.1/?30.95 = 0.81. Copyright © 2012 John Wiley & Sons, Ltd.     

Theoretical design on a new double functional device of 2,2′‐bipyridine‐embedded N‐(9‐pyrenyl methyl)aza‐15‐crown‐5

Theoretical design on a new molecular switch and fluorescent chemosensor double functional device of aza‐crown ether (2,2′‐dipyridine‐embedded N‐(9‐anthraceneyl(pyrenyl)methyl)aza‐15‐crown‐5) was explored. The interactions between ligands and a series of alkaline earth metal cations (Mg²⁺, Ca²⁺, Sr²⁺, and Ba²⁺) were investigated. The fully optimized geometry structures of the free ligands ( L _1, L ₂) and their metal cation complexes ( L ₁/M²⁺, L ₂/M²⁺) were calculated with the B3LYP/6‐31G(d) method. The natural bond orbital analysis, which is based on optimized geometric structures, was used to explore the interaction of L ₁/M²⁺, L ₂/M²⁺ molecules. The absorption spectra of L _1, L ₂, L ₁/M²⁺, and L ₂/M²⁺, and their excited states were studied by time‐dependent density functional theory. A new type molecular device L ₂(2,2′‐dipyridine‐embedded N‐(9‐pyrenyl methyl)aza‐15‐crown‐5) is designed, which not only has the selectivity for Sr²⁺, and construct allosteric switch, but also has fluorescent sensor performance.