Structural properties of 10 μm thick InN grown on sapphire (0001)

The structural properties of a 10 μm thick In-face InN film, grown on Al₂O₃ (0001) by radio-frequency plasma-assisted molecular beam epitaxy, were investigated by transmission electron microscopy and high resolution x-ray diffraction. Electron microscopy revealed the presence of threading dislocations of edge, screw and mixed type, and the absence of planar defects. The dislocation density near the InN/sapphire interface was 1.55×10¹⁰ cm⁻², 4.82×10⁸ cm⁻² and 1.69×10⁹ cm⁻² for the edge, screw and mixed dislocation types, respectively. Towards the free surface of InN, the density of edge and mixed type dislocations decreased to 4.35×10⁹ cm⁻² and 1.20×10⁹ cm⁻², respectively, while the density of screw dislocations remained constant. Using x-ray diffraction, dislocations with screw component were found to be 1.2×10⁹ cm⁻², in good agreement with the electron microscopy results. Comparing electron microscopy results with x-ray diffraction ones, it is suggested that pure edge dislocations are neither completely randomly distributed nor completely piled up in grain boundaries within the InN film.     

Morphology of InN nanorods using spectroscopic Raman imaging

We report the vibrational properties of vertical and oblique InN nanorods (NRs) grown by molecular beam epitaxy (MBE). Surface optical (SO) Raman mode at 561 cm⁻¹, belonging to E₁ symmetry [SO(E₁)], is identified along with symmetry allowed Raman modes of E₂(low), E₂(high), and E₁(LO) at 87, 489, and 589 cm⁻¹, respectively, corresponding to wurtzite InN phase. Usually, SO phonon modes arise due to breakdown of translational symmetry of surface potential at surface defects, which are attributed by the surface roughness. Intensity distribution of E₁(LO) and SO(E₁) phonon modes over a specified area have been analysed using Raman area mapping with an optical resolution of 400 nm. Imaging with E₁(LO) phonon mode, originating from the bulk of the sample, distinguishes the vertical NRs alone. We are able to resolve NR morphologies in both vertical and oblique cases with additional Raman mapping analysis of SO(E₁) phonon mode, emerging from the surface irregularities, which are confined to the tip of MBE grown NRs. Copyright © 2013 John Wiley & Sons, Ltd.     

InN的光致发光特性研究

研究了利用金属有机化学气相淀积生长的氮化铟薄膜的光致发光特性. 由于氮化铟本身具有很高的背景载流子浓度, 费米能级在导带之上, 通过能带关系图以及相关公式拟合光致发光图谱可以得到生长的氮化铟的带隙为0.67 eV, 并且可以计算出相应的载流子浓度为n=5.4×10¹⁸ cm^-3, 从而找到了一种联系光致发光谱与载流子浓度两者的方法. 另外通过测量变温条件下氮化铟的发光特性, 研究了发光峰位以及发光强度随温度的变化关系, 发现光致发光强度随温度的升高逐渐降低, 发光峰位随温度的升高只是红移, 并没有出现"S"形的非单调变化, 这种差异可能是由于光致发光谱的半高宽过高导致, 同时也可能与载流子浓度以及内建电场强度有关. 关键词： 氮化铟 金属有机化学气相淀积 光致发光 载流子浓度     

基于分子束外延生长的1.05 eV InGaAsP的超快光学特性研究

利用分子束外延方法制备了应用于四结光伏电池的1.05 eV InGaAsP薄膜, 并对其超快光学特性进行了研究. 温度和激发功率有关的发光特性表明: InGaAsP材料以自由激子发光为主. 室温下InGaAsP材料的载流子发光弛豫时间达到10.4 ns, 且随激发功率增大而增大. 发光弛豫时间随温度升高呈现S形变化, 在低于50 K时随温度升高而增大, 在50–150 K之间时减小, 而温度高于150 K时再次增大. 基于载流子弛豫动力学, 分析并解释了温度及非辐射复合中心浓度对样品材料载流子发光弛豫时间S形变化的影响.     

InN量子点的液滴外延及物性表征

由于1. 55μm波段广泛应用于通信领域,为了探索不同生长温度对InN量子点的形貌影响,并且实现自组装InN量子点在1. 55μm通信波段的发光,对InN量子点的液滴外延及物性进行了相关研究。首先利用射频等离子体辅助分子束外延(PA-MBE)技术在GaN模板上,采用液滴外延方法在3种温度下生长了InN量子点结构。生长过程中靠反射高能电子衍射(RHEED)对样品进行原位监控。原子力显微镜(AFM)表征结果表明随着生长温度升高,量子点尺寸变大,密度减小。在生长温度350℃和400℃下,观测到了量子点;当温度高于450℃时,未观测到InN量子点。当生长温度为400℃时,量子点形貌最好,密度为6×10~8/cm~2,对400℃下生长的InN量子点进行了变温PL测试,成功得到InN量子点在1. 55μm波段附近的光致发光,并且随着测试温度的升高,量子点的发光峰位发生了先红移后蓝移最后又红移的S型曲线变化,这种量子点有望在未来应用于量子通信领域。     

高In组分InGaNAs/GaAs量子阱的生长及发光特性

采用分子束外延技术(MBE)在Ga As衬底上外延生长高In组分(40%)In Ga NAs/Ga As量子阱材料,工作波长覆盖1.3~1.55μm光纤通信波段。利用室温光致发光(PL)光谱研究了N原子并入的生长机制和In Ga NAs/Ga As量子阱的生长特性。结果表明:N组分增加会引入大量非辐射复合中心;随着生长温度从480℃升高到580℃,N摩尔分数从2%迅速下降到0.2%;N并入组分几乎不受In组分和As压的影响,黏附系数接近1;生长温度在410℃、Ⅴ/Ⅲ束流比在25左右时,In_(0.4)Ga_(0.6)N_(0.01)As_(0.99)/Ga As量子阱PL发光强度最大,缺陷和位错最少;高生长速率可以获得较短的表面迁移长度和较好的晶体质量。     

Influence of Ga coverage on the sizes of GaAs quantum dash pairs grown by high temperature droplet epitaxy

We investigate the formation of GaAs quantum dash pairs with different coverages by droplet epitaxy. The GaAs quantum dash pairs of various sizes are fabricated by high temperature droplet epitaxy. Dual‐sized quantum dash pairs are observed along $[01\bar 1]$ orientation. Depending on the Ga cov‐ erage, the width of the quantum dash pairs can be tuned from ～100 nm to ～300 nm while keeping the height in the range of 4 nm to 10 nm. The coverage dependence of quantum dash pairs is also confirmed with photoluminescence measurement. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characterization of InN epilayers grown on Si(1 1 1) substrates at various temperatures by MBE

InN films have been grown by plasma-assisted molecular beam epitaxy (PAMBE) and characterized by various technologies. It was found that the structural, optical and electrical properties can be drastically improved by raising growth temperature from 440 to 525 °C. Grainy morphology was found in the grain size was found in atomic force microscope images. The large grain size was about 360 nm for a film grown at 525 °C. These films exhibited Wurtzite structure with a c/a ratio ranging from 1.59 to 1.609. The dislocation densities estimated by X-ray diffraction techniques closely agreed with those analyzed by plan-view transmission electron microscopy. Photoluminescence (PL) studies confirmed near band-to-band transitions and the narrowest low-temperature PL peak width was found to be 24 meV at 0.666 eV. Carrier concentrations decreased from 1.44×10¹⁹ to 1.66×10¹⁸ cm⁻³ and Hall mobility increased from 226 to 946 cm² V⁻¹ s⁻¹ as the growth temperature is progressively increased from 440 to 525 °C. Raman spectra also indicated improved crystal quality as the growth temperature was raised.     

厚度对MOCVD生长InN薄膜位错特性与光电性质的影响

研究了金属有机物化学气相沉积法制备的不同厚度InN薄膜的位错特性与光电性质.基于马赛克微晶模型,通过X射线衍射非对称面摇摆曲线测量,拟合出样品刃型位错密度分别为4.2×10¹⁰cm^-2和6.3×10¹⁰cm^-2,并发现样品的微晶扭转角与位错密度随薄膜厚度增加而减小.通过室温霍尔效应测量得到样品载流子浓度分别为9×10¹⁸cm^-3和1.2×10¹⁸cm关键词： 氮化铟 位错 载流子起源 局域态     

渐变掩蔽图形超低压选择区域生长法制备高质量InGaAsP多量子阱材料

采用超低压(22 mbar)选择区域生长(Selective Area Growth, SAG)金属有机化学汽相沉积(Metal-organic Chemical Vapor Deposition, MOCVD)技术成功制备了高质量InGaAsP/InGaAsP多量子阱(Multiple Quantum Well, MQW)材料. 在较小的掩蔽宽度变化范围内(15—30μm)，得到了46nm的光荧光(Photoluminescence, PL)波长偏移量，PL半高宽(Full-Width-at-Half- 关键词： 超低压 选择区域生长 渐变掩蔽图形     

双层堆垛长波长InAs/GaAs量子点发光性质研究

研究了双层堆垛InAs/GaAs/InAs自组织量子点的生长和光致发光(PL)的物理性质。通过优化InAs淀积量、中间GaAs层厚度以及InAs量子点生长温度等生长条件,获得了室温光致发光1391～1438nm的高质量InAs量子点。研究发现对量子点GaAs间隔层实施原位退火、采用Sb辅助生长InGaAs盖层等方法可以增强高密度(2×1010 cm-2)InAs量子点的发光强度,减小光谱线宽,改善均匀性和红移发光波长。     

Localized states emission in type‐I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy

As an important candidate for novel infrared semiconductor lasers, the optical properties of GaAsSb‐based multiple quantum wells (MQWs) are crucial. The temperature‐ and excitation power‐dependent photoluminescence (PL) spectra of the GaAs_0.92Sb_0.08/Al_0.2Ga_0.8As MQWs, which were grown by molecular beam epitaxy, were investigated and are detailed in this work. Two competitive peaks were observed from 40 K to 90 K. The peak located at the low‐energy shoulder was confirmed to be localized states emission (LE) and the high‐energy side peak was confirmed to be free‐carrier emission by its temperature‐dependent emission peak position. It is observed that the LE peak exhibited a blueshift with the increase of laser excitation power, which can be ascribed to the band filling effect of localized states. Our studies have great significance for application of GaAsSb‐based MQWs in infrared semiconductor lasers.

     

Influence of adatom migration on wrinkling morphologies of AlGaN/GaN micro-pyramids grown by selective MOVPE

Ga N micro-pyramids with AlGaN capping layer are grown by selective metal–organic–vapor phase epitaxy(MOVPE). Compared with bare Ga N micro-pyramids, AlGaN/Ga N micro-pyramids show wrinkling morphologies at the bottom of the structure. The formation of those special morphologies is associated with the spontaneously formed AlGaN polycrystalline particles on the dielectric mask, owing to the much higher bond energy of Al–N than that of Ga–N. When the sizes of the polycrystalline particles are larger than 50 nm, the uniform source supply behavior is disturbed, thereby leading to unsymmetrical surface morphology. Analysis reveals that the scale of surface wrinkling is related to the migration length of Ga adatoms along the AlGaN {1ī01} facet. The migration properties of Al and Ga further affect the distribution of Al composition along the sidewalls, characterized by the μ-PL measurement.     

分子束外延生长的(GaAs1－xSbx/InyGa1－yAs)/GaAs量子阱光致发光谱研究

报道了(GaAs_1-xSb_x/In_yGa_1-yAs)/Ga As量子阱结构的分子束外延生长与光致发光谱研究结果.变温与变激发功率光致发光谱的研究表明了此结构 为二型量子阱发光性质.讨论了光谱双峰结构的跃迁机制.通过优化生长条件，获得了室温1 31μm发光. 关键词： 分子束外延 量子阱 二型发光     

Strong blue emission from ZnSe nanowires grown at low temperature

We report optimized photoluminescence of ZnSe nanowires grown by molecular beam epitaxy, obtained by lowering the growth temperature down to 300 °C. The low‐temperature growth method has been developed using Si(111) and GaAs(111)B substrates. On the latter, vertical oriented blue‐emitting nanowires have been obtained. The growth mecha‐ nism is discussed with the help of in‐situ and ex‐situ electronic and structural measurements. We also report strong blue luminescence from ZnSe nanowires grown on ITO‐coated glasses, demonstrating that ZnSe nanowires are optimal candidates for transparent optoelectronics. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effects of oxygen flow rate on the properties of HfO2 layers grown by metalorganic molecular beam epitaxy

The investigations on the properties of HfO₂ dielectric layers grown by metalorganic molecular beam epitaxy were performed. Hafnium-tetra-tert-butoxide, Hf(C₄H₉O)₄ was used as a Hf precursor and pure oxygen was introduced to form an oxide layer. The grown film was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and capacitance–voltage (C–V) and current–voltage (I–V) analyses. As an experimental variable, the O₂ flow rate was changed from 2 to 8 sccm while the other experimental conditions were fixed. The XPS spectra of Hf 4f and O 1s shifted to the higher binding energy due to the charge transfer effect and the density of trapped charges in the interfacial layer was increased as the oxygen flow rate increased. The observed microstructure indicated the HfO₂ layer was polycrystalline, and the monoclinic phases are the dominant crystal structure. From the C–V analyses, k = 14–16 and EOT = 44–52 were obtained, and the current densities of (3.2–3.3) × 10⁻³ A/cm² were measured at −1.5 V gate voltage from the I–V analyses.     

分子束外延生长赝配高电子迁移率超高速微结构功能材料里深中心识别

应用深能级瞬态谱(DLTS)技术研究分子束外延(MBE)生长的highelectronmobilitytransistors(HEMT)和Pseudomorphichighelectronmobilitytransistors(PHEMT)结构深中心行为.样品的DLTS谱表明,在HEMT和PHEMT结构的nAlGaAs层里存在着较大浓度(1015-1017cm-3)和俘获截面(10-16cm2)的近禁带中部电子陷阱.它们可能与AlGaAs层的氧含量有关.同时还观察到PHEMT结构晶格不匹配的AlGaAsInGaAsGaAs系统在AlGaAs里产生的应力引起DX中心(与硅有关)能级位置的有序移动.其移动量可作为应力大小的一个判据,表明DLTS技术是定性识别此应力的可靠和简便的工具. 关键词： 分子束外延生长 高电子迁移率超高速微结构功能材料 深中心     

Solid‐phase epitaxy of InOx Ny alloys via thermal oxidation of InN films on yttria‐stabilized zirconia

The characteristics of InO_x N_y alloy films prepared via thermal oxidation of InN epitaxial films with In‐ or N‐polarities grown on nearly lattice‐matched, yttria‐stabilized zirconia (YSZ) substrates are investigated. The InN films were oxidized to InO_x N_y with a gradual change in O/N composition by annealing in air. Structural analysis revealed that the temperature for phase transition from wurtzite structure depends on the polarity of InN, and N‐polar InO_x N_y films can retain their wurtzite structure even at higher temperatures compared with the case of In‐polar films. Furthermore, changes in the valence band structure and optical characteristics of the InO_x N_y alloys take place via thermal oxidation. These results indicate that InO_x N_y grown via thermal oxidation of N‐polar InN on YSZ can be considered as an alloy semiconductor for optoelectronic devices. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire

We report on the polarity control of ZnO grown by plasma assisted molecular beam epitaxy on Ga polar (0001) GaN/sapphire templates simply via the oxygen‐to‐Zn (VI/II) ratio during the growth of a thin nucleation layer at 300 °C. Following Zn pre‐exposure, the ZnO layers nucleated with low VI/II ratios (<1.5) exhibited Zn‐polarity. Those nucleated with VI/II ratios above 1.5, exhibited O‐polarity. Supported by scanning transmission electron microscopic imaging, we have unequivocally demonstrated that polarity inversion takes place without formation of any vertical inversion domains and within one monolayer of presumably non‐stoichiometric GaO_x formed at the ZnO/GaN interface. A direct correlation between polarity and strain sign of ZnO layers has been found. The Zn‐polar ZnO layers were under tensile biaxial strain, whereas the O‐polar material exhibited compressive strain. Moreover, the amount of residual strain varied linearly with VI/II ratio used during the low‐temperature nucleation layer growth. Strain control with VI/II ratio has been explained by the potential formation of Zn interstitials.     

Lattice vibrations and optical properties of wurtzite InN in the reststrahlen region

The lattice vibrations and optical properties of wurtzite InN are studied by the first-principle calculations based on the density functional theory. The phonon spectra of lattice vibration are calculated under the Generalized-Gradient Approximation (GGA). The optical properties are investigated based on the phonon spectra. The phonon dispersion curve and the phonon density of state are calculated and compared with the existing experimental data. The calculation indicates that InN has a metal-like behavior. Our calculation shows that the fundamental vibration is therefore infrared active in wurtzite structure semiconductors.