We demonstrated important changes produced on the modulation frequency of hybrid organic–inorganic light‐emitting diodes to examine the applicability as a light source for visible optical communications. The fabricated device structure was 4,4′‐bis[N ‐(1‐napthyl)‐N ‐phenyl‐amino]biphenyl/4,4′‐(bis(9‐ethyl‐3‐carbazovinylene)‐1,1′‐biphenyl:4,4′‐bis[9‐dicarbazolyl]‐2,2′‐biphenyl/ZnS/LiF/MgAg. This device showed an improvement in the modulation frequency using ZnS instead of an organic material, tris(8‐hydroxyquinoline)aluminum. A maximum cutoff frequency of 20.6 MHz was achieved.
In the present work we use a series of Ti–Ru alloys, with minor amounts of Ru (0.01, 0.02, 0.05 and 0.2 at%) to grow anodic self‐organized Ru‐doped TiO2 nanotube layers. When used in dye‐sensitized solar cells (DSSCs), the nanotube layers with an optimum amount of Ru (0.02 at% Ru in the alloy) show a considerable increase in solar cell efficiency (η = 5.2%) under AM1.5 (100 mW/cm2) conditions compared with non‐doped TiO2 nanotubes (η = 4.3%).
As electronic operating frequencies increase toward the terahertz regime, new electrooptic modulators capable of low‐voltage high‐frequency operation must be developed to provide the necessary optical interconnects. This Letter presents a new concept that exploits modulation instability to compensate for the intrinsically weak electrooptic effect, χ(2). Simulations demonstrate more than 50 times enhancement of electrooptic effect at millimeter wave frequencies leading to a substantial reduction in the required modulation voltage.
Lead carbonate chloride, Pb2CO3Cl2, known as mineral phosgenite, is introduced as a novel SRS‐active carbonate crystal with tetragonal symmetry. Under picosecond one‐micron laser pumping Raman‐induced χ(3)‐nonlinear generation in the near‐IR is observed. All recorded high‐order Stokes and anti‐Stokes sidebands are identified and attributed to two SRS‐promoting vibration modes with ωSRS1 ≈ 1062 cm–1 and ωSRS2 ≈ 86 cm–1.
We study graphene growth on hafnia (HfO2) nanoparticles by chemical vapour deposition using optical microscopy, high resolution transmission electron microscopy and Raman spectroscopy. We find that monoclinic HfO2 nanoparticles neither reduce to a metal nor form a carbide while nucleating nanometer domain‐sized few layer graphene. Hence we regard this as an interesting non‐metallic catalyst model system with the potential to explore graphene growth directly on a (high‐k) dielectric.
Alkali‐free Cu(In,Ga)Se2(CIGS) absorbers grown on Mo‐coated alumina (Al2O3) substrates were doped with potassium (K) after CIGS growth by a potassium fluoride (KF) post‐deposition treatment (PDT). The addition of K to the absorber leads to a strong increase in cell efficiency from 10.0% for the K‐free cell to 14.2% for the K‐doped cell, mainly driven by an increase in the open‐circuit voltage Voc and the fill factor FF, and to an increase in the net charge carrier density. Hence K doping by KF‐PDT is comparable to doping with Na.
Organic field‐effect transistors (OFETs) based on interconnected nanowire networks of P3HT have been successfully fabricated by using a mixed‐solvent method. The nanowire network density can be tuned by controlling the anisole/chlorobenzene ratio of mixed solvents. The obtained field‐effect mobility, threshold voltage and the ratio of on‐state current and off‐state current (Ion/Ioff) was 0.0435 cm2/V s, –10 V and 1.75 × 104, respectively. The three‐dimensional and interconnected nanowire structure of the networks can enhance the charge transport in P3HT.
In this Letter we demonstrate that hydrogen‐terminated porous silicon (PSi) layers and powders can serve as highly efficient reductive templates for noble metal salts. The reduction results in metal nanoparticle (NP) formation in the pores of PSi. Gold NP formation has been monitored in‐situ by measuring the plasmon resonance response. Pt NPs, formed in the PSi matrix, were investigated by transmission electron microscopy and energy‐dispersive X‐ray analysis. Furthermore, hybrid Pt/PSi nanocomposites exhibit a high catalytic activity for CO oxidation.
We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high‐temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ～300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high‐temperature sneak current and tighter high‐temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect.
The crystallization process of mechanically alloyed Fe75Zr25 metallic glasses is investigated by means of both thermo‐magnetization and in situ neutron powder thermo‐diffraction experiments in the temperature range 300–1073 K. It was found that the crystallization takes place in a two‐step process, involving firstly the appearance of metastable Fe and Fe2Zr crystalline phases between 880 K and 980 K, and a subsequent polymorphic transformation into Fe3Zr above 980 K. These findings explain the anomalous magnetization vs. temperature behaviour on heating–cooling cycles.
The efficiency of a photovoltaic cell is directly proportional to its open circuit voltage. This in turn is eventually set by the donor‐acceptor energy gap, i.e. the energy of the intermolecular charge‐transfer state in organic solar cells. In this letter we study diindenoperylene (DIP) as a new molecular acceptor. We show that planar heterojunctions of thiophene derivatives and DIP yield extraordinarily high open circuit voltages (Voc) of approximately 1.2 V for poly(3‐hexylthiophene) and almost 1.4 V for heat treated α‐sexithiophene. Those values are close to the maximum Voc attainable for these material systems.
Persistent layer‐by‐layer growth is demonstrated for pulsed‐laser homoepitaxy of ZnO thin films on $(000\bar 1)$ ZnO single crystals. Employing interval pulsed‐laser deposition (PLD), RHEED oscillations are stabilized over a film thickness of about 90 nm. For interval pulsed laser deposited films a considerably decreased root‐mean‐square surface roughness of 0.26 nm was found, in comparison to 0.74 nm for conventional PLD. A small asymmetry in the X‐ray diffraction (XRD) 2θ –ω scan reveals compressive strain in the thin film being slightly larger for interval PLD as compared to conventional PLD. The FWHM of the photoluminescence (PL) I6 line is higher with about 500 µeV as compared to 350 µeV for the conventional PLD. Consequently, both XRD as well as PL indicate a slightly higher amount of charged defects for the interval PLD.
In this study, we report a low power Ni/GeOx /TiOy /TaN resistive random access memory (RRAM) using plasma‐modified electrode. The low sub‐mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high‐temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta–N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high‐temperature current distribution.
We report on solution‐processible polymer solar cells (PSCs) fabricated on a papery substrate using carton. Highly conductive PEDOT:PSS was used as a bottom anode and planarization layer, and a semi‐transparent top cathode was applied. This research could be an important approach to the development of all‐solution‐processible papery PSCs as well as paper electronics.
We investigate the characteristics of intra‐grain and grain boundary defects in polycrystalline Si films, by employing quantitative electron paramagnetic resonance measurements on liquid phase crystallized layers with an average grain size of 200 µm and tailored solid phase crystallized Si layers with similar intra‐grain morphology but systematically varied grain sizes between 0.25 µm and 1 µm. The defect characteristics are found to be composed of two distinctive g ‐values of g = 2.0055 and 2.0032, which are attributed to grain boundary defects and intra‐grain defects, respectively. Additional hydrogenation leads to a reduction of the overall defect concentration, while a rapid thermal annealing process primarily heals intra‐grain defects.
The authors describe an organic complementary inverter with N,N′‐ditridecyl‐3,4,9,10‐perylenetetracarboxylic diimide as an n‐type semiconductor and pentacene as a p‐type semiconductor. Each transistor of the inverter exhibited high carrier mobility: 1.62 cm2/Vs for an n‐type drive transistor and 0.57 cm2/Vs for a p‐type switch transistor. The gain of the inverter reached 125. Another inverter using Ta2O5 as a high κ gate dielectric performed well with a gain of 500 and an operation voltage of only 5 V.
Steady‐state and time‐resolved photoluminescence of silicon nanoparticles dispersed in low‐polar liquids at above room temperature is studied. The roles of low‐polar liquids as well as mechanisms responsible for their temperature‐dependent photoluminescence are discussed. The thermal sensitivity of the photoluminescence is estimated and application of the nanoparticles as nanothermometers is proposed.
The transport properties of the junction assembled by zigzag graphene nanoribbons (ZGNRs) and Au electrode (Au/ZGNR) are investigated using first‐principles calculations. It is found that the Au/ZGNR junction behaves as a typical diode with Schottky barrier at the contact. Our results indicate that although the oxidization at the contact slightly influences the Schottky barrier, the I –V characteristic is effectively modulated. Such effect derives from the impact of the oxidization on the coupling between the ZGNRs and Au electrode.
