Electrical properties of the high-pressure phases of gallium and indium tellurides

A study has been made of the resistance ρ, the thermopower S, and magnetoresistance MR of Ga₂Te₃ and α-In₂Te₃ single crystals at pressures P up to 25 GPa. It is found that the resistance ρ and |S| sharply decrease at ∼0–5 and 1.5–3 GPa, respectively. The semiconductor-metal phase transitions in the temperature range from 77 to 300 K are established from the sign reversal of the temperature coefficient of ρ to occur at P>4.4 and >1.9 GPa. The values S ≈+(10–20)μ V/K for the metallic phases with a Bi₂Te₃-type structure agree with those for liquid In₂Te₃ and Ga₂Te₃. Negative MR is revealed in In₂Te₃ at P≈1.9 GPa. No MR is observed in Ga₂Te₃ up to 25 GPa. The variation of the electronic structure of In₂Te₃ and Ga₂Te₃ under pressure is discussed. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 6, 2000, pp. 1004–1008. Original Russian Text Copyright ? 2000 by Shchennikov, Savchenko, Popova.     

Synergistically Enhancing Thermoelectric Performance of n-Type PbTe with Indium Doping and Sulfur Alloying

To achieve high-performance n-type PbTe-based thermoelectric materials, this work provides a synergetic strategy to improve electrical transport property with indium (In) element doping and reduces thermal conductivity with sulfur (S) element alloying. In n-type PbTe, In doping can tune the carrier density in the whole working temperature range, causing the carrier density to increase from 2.18 × 10¹⁹ cm⁻³ at 300 K to 4.84 × 10¹⁹ cm⁻³ at 823 K in Pb_0.98In_0.005Sb_0.015Te. The optimized carrier density can further modulate electrical conductivity and Seebeck coefficient, finally contributing to a substantial increase of power factor, and a maximum power factor increase from 19.7 µW cm⁻¹ K⁻² in Pb_0.985Sb_0.015Te to 28.2 µW cm⁻¹ K⁻² in Pb_0.9775In_0.0075Sb_0.015Te. Based on the optimally In-doped PbTe, S alloying is introduced to suppress phonon propagation by forming a complete solid solution, which could effectively reduce lattice thermal conductivity and simultaneously benefit carrier mobility to maintain high power factor. With S alloying, the minimum lattice thermal conductivity decreases from 0.76 Wm⁻¹ K⁻¹ in Pb_0.985Sb_0.015Te to 0.42 Wm⁻¹ K⁻¹ in Pb_0.98In_0.005Sb_0.015Te_0.88S_0.12. Combining the advantages of both In doping and S alloying, the peak ZT value and averaged ZT (ZT_ave) (300–873 K) are boosted from 1.0 and 0.60 in Pb_0.985Sb_0.015Te to 1.4 and 0.87 in Pb_0.98In_0.005Sb_0.015Te_0.94S_0.06.     

Thermoelectric properties of nano-bulk bismuth telluride prepared with spark plasma sintered nano-plates

The pursuit for a high-performance thermoelectric n-type bismuth telluride-based material is significant because n-type materials are inferior to their corresponding p-type materials in highly efficient thermoelectric modules. Herein, to improve the thermoelectric performance of an n-type Bi₂Te₃, we prepared Bi₂Te₃ nano-plates with a homogeneous sub-micron size distribution and thickness range of about a few tens of nanometers. This was achieved using a typical nano-chemical synthetic method, and the prepared materials were then spark plasma sintered to fabricate n-type nano-bulk Bi₂Te₃ samples. We observed a significant enhancement of the anisotropic electrical transport properties for the nano-bulk sample with a higher power factor along the in-plane direction (24.3?μW?cm^?1?K^?2 at 300?K) than that along the out-of-plane direction (8.1?μW?cm^?1?K^?2 at 300?K). However, thermal transport properties were insensitive along the measured direction for the nano-bulk sample. We used a dimensionless figure of merit ZT to calculate the thermoelectric performance. The results showed that the maximum ZT value of 0.69 was achieved along the in-plane direction at 440?K for the nano-bulk n-type Bi₂Te₃ sample, which was however smaller than that of the previously reported n-type samples (ZT of 1.1). We believe that a further enhancement of the ZT value in the fabricated nano-bulk sample could be accomplished by effectively removing the surface organic ligand of the Bi₂Te₃ nano-plate particles and optimizing the spark plasma sintering conditions, maintaining the nano-plate morphology intact.     

Optical properties of polyvinyl alcohol doped (Se80Te20)100–xAgx (0 ≤ x ≤ 4) composites

Polyvinyl alcohol (PVA) doped (Se₈₀Te₂₀)_100–xAg_x (0 ≤ x ≤ 4) thin films were prepared by the spin-coating technique on a quartz substrate. The optical parameters of PVA-doped (Se₈₀Te₂₀)_100–xAg_x (0 ≤ x ≤ 4) composites at the same chalcogen concentration (S₀ = 0.1 mg ml^?1) and PVA/(Se₈₀Te₂₀)₉₆Ag₄ composites at three different chalcogen concentrations viz. S₁ = 0.3 mg ml^?1, S₂ = 0.6 mg ml^?1 and S₃ = 1 mg ml^?1 have been studied. The semi-crystalline nature of the as-deposited thin filmsisdetermined by X-ray diffraction. The transmission and reflection spectra of PVA-doped Se–Te–Ag thin films were obtained in a 350–650 nm spectral region. The optical-band gap has been calculated from the transmission and reflection data. The refractive index has been calculated by the measured reflection data. It has been found that the optical-band gap increases, but the refractive index, extinction coefficient, and the real and imaginary parts of the dielectric constant decrease, with increase in Agcontent in PVA-doped (Se₈₀Te₂₀)_100–xAg_x (0 ≤ x ≤ 4) thin films. Such type of behavior is explained on the basis of decrease in density of the defect states. However, the optical-band gap has been found to be decreased and all other optical parameters show increase in their values with increase in concentration of (Se₈₀Te₂₀)₉₆Ag₄ glass in PVA-doped composites. The results have been explained on the basis of cluster-size formation at the time of dissolution. This study shows that the optical properties of new composites are affected by the change in silver and chalcogen concentration.     

SUT‐NANOTEC‐SLRI beamline for X‐ray absorption spectroscopy

The SUT‐NANOTEC‐SLRI beamline was constructed in 2012 as the flagship of the SUT‐NANOTEC‐SLRI Joint Research Facility for Synchrotron Utilization, co‐established by Suranaree University of Technology (SUT), National Nanotechnology Center (NANOTEC) and Synchrotron Light Research Institute (SLRI). It is an intermediate‐energy X‐ray absorption spectroscopy (XAS) beamline at SLRI. The beamline delivers an unfocused monochromatic X‐ray beam of tunable photon energy (1.25–10 keV). The maximum normal incident beam size is 13 mm (width) × 1 mm (height) with a photon flux of 3 × 10⁸ to 2 × 10¹⁰ photons s^?1 (100 mA)^?1 varying across photon energies. Details of the beamline and XAS instrumentation are described. To demonstrate the beamline performance, K‐edge XANES spectra of MgO, Al₂O₃, S₈, FeS, FeSO₄, Cu, Cu₂O and CuO, and EXAFS spectra of Cu and CuO are presented.     

Energy formation of antisite defects in doped Sb2Te3 and Bi2Te3 crystals

The free carrier concentration of the Sb_2−xIn_xTe₃, Bi_2−xIn_xTe₃ and Bi₂Te_3−xS_x crystals has been determined from the values of the Hall constants and the free carrier concentration of the Sb_2−xTl_xTe₃ has been calculated from the plasma resonance frequency; with increasing value of x, the hole concentration decreases. As the incorporation of the elements In, Tl and S into the lattice Sb₂Te₃ or Bi₂Te₃, respectively, gives rise to the uncharged defects In^x_Sb, Tl^x_Sb, In^x_Bi and S^x_Te, the x causes the decrease of the antisite defects concentration. The proven effect is explained in the following way: the antisite defects can be created only in crystals whose atoms are bound by weakly polarized bonds. The incorporation of In, Tl and S atoms into the crystal lattice of Sb₂Te₃ or Bi₂Te₃ increases the bond polarity, the ionicity of ternary crystals increases. This unfavorably affects the increase of antisite defects whose concentration decreases. The change of the bond polarity is considered from the changes discovered in the formation energy of antisite defects of the above mentioned ternary crystals.     

Thermoelectric Properties of High-Entropy Wolframite Oxide: (CoCuNiFeZn)1−xGaxWO4

Herein, the synthesis of high-entropy wolframite oxide (CoCuNiFeZn)_1-xGaxWO₄ through standard solid-state route followed by spark plasma sintering and their structural, microstructural, and thermoelectric (TE) properties are investigated. X-ray diffraction pattern followed by patterns matching refinement shows a monoclinic structure with the volume of the unit cell decreasing with increasing Ga content. The optical bandgap for these oxides shows a cocktail effect in high-entropy configuration. The Seebeck coefficient indicates electrons as dominating charge carriers with a nondegenerate behavior. The electrical resistivity decreases with increasing temperature depicting a semiconducting nature. Thermal conductivity in high-entropy samples (κ ≈ 2.1 W m⁻¹ K⁻¹ @ 300 K) is significantly lower as compared to MgWO₄ (κ ≈ 11.5 W m⁻¹ K⁻¹ @ 300 K), which can be explained by the strong phonon scattering due to large lattice disorder in high-entropy configuration. The TE figure of merit zT increases with Ga doping via modifying all three TE parameters positively.     

GeI2 monolayer: a model thermoelectric material from 300 to 600 K

ABSTRACT

In this work, the electronic structure, optical properties and thermoelectric properties of the GeI₂ monolayer are calculated by the first principles with the Boltzmann transport equation. The monolayer is calculated as an indirect band gap semiconductor with an indirect band gap of a value 2.19?eV. This GeI₂ monolayer is good for absorbing low-energy photons, and it is insensitive to high-energy photons. The material is stable at temperatures up to 600?K, so we calculated the thermal conductivity (K_L), Seebeck coefficient (S), power factor (PF) and thermoelectric figure of merit (ZT) of the GeI₂ monolayer at various carrier concentrations from 300 to 600?K. Due to the lower group velocity, the GeI₂ monolayer has a lower thermal conductivity of 0.48?W/m?K at 300K. In P-type doping, the power factor can up to 0.11?mW/m?K², and its ZT value is 4.04 at 600?K of the GeI₂ monolayer, indicating that the GeI₂ monolayer is a potential thermoelectric material.     

The elastic behaviour of tetrahedral materials with vacant sites

As part of a study of defect tetrahedral structure compounds, the elastic constants of single crystal specimens of Hg₃Ga₂□Te₆ and HgIn₂□Te₄ have been measured between 77 K and room temperature using the pulse superposition technique. These compounds are included in the series HgTe, Hg₅In₂□Te₈, Hg₃In₂□Te₆ and HgIn₂□Te₄ and HgTe, Hg₅Ga₂□Te₈, Hg₃Ga₂□Te₆ where there is a progressive increase in the concentration of vacant sites. While the other compounds studied are cubic, HgIn₂□Te₄ has a tetragonal structure with a $\text{c}\text{a}$ ratio of 2.0. The components of the elastic stiffness tensor of this material at 77 K are (in units of 10¹¹ dyne cm^?2) C₁₁ = 4.31 C₁₂ = 2.54 C₄₄ = 2.14 C₃₃ = 4.47 C₁₃ = 2.18 C₆₆ = 2.41. In a cubic material C₁₁ = C₃₃, C₄₄ = C₆₆ and C₁₂ = C₁₃: the elastic behaviour of this tetragonal compound closely resembles that of a cubic material, as might be anticipated from its structure. This similarity is further illustrated by reference to the symmetry of phase velocity and Young's modulus surfaces. Examination of the elastic constants and reduced elastic constants of these compounds shows a regular trend, the elastic stiffness decreases as the number of vacant sites increases. There is an approximately linear relationship between the reduced bulk modulus and the number of sited vacancies.     

Parametric Frequency Converters Based on New Nonlinear Crystals

Results of investigations into the physical properties of a number of new nonlinear crystals are presented. The parameters of frequency converters manufactured on their basis are compared, and second-harmonic generation of CO₂ lasers first excited by frequency conversion in LiInSe₂, AgGa_{1– x} In_xSe₂, Ag_xGa_xGe_xS_{2(1 + x)}, and Hg_1–x Cd_xGa₂S₄ crystals is investigated. The superiority of HgGa₂S₄, Hg_1–x Cd_xGa₂S₄, and AgGa_1–x In_xSe₂ over the well-known crystals has been demonstrated for frequency conversion both within the middle-IR range and from the visible range to the middle-IR range. Advantages of LiInSe₂ and AgGa_1–x In_xSe₂ crystals are demonstrated for the direct frequency conversion of femtosecond laser radiation to the middle-IR range compared to the cascade frequency conversion and direct frequency conversion in LiInS₂ crystals.     

p型Ag0.5(Pb8－xSnx)In0.5Te10化合物的制备及其热电性能

采用高温熔融缓冷和放电等离子烧结工艺制备了p型Ag_0.5(Pb_8-xSn_x)In_0.5Te₁₀五元化合物.研究了Sn含量对化合物载流子传输特性及热电性能的影响规律.结果表明：在Ag_0.5(Pb_8-xSn_x)In_0.5Te₁₀(x 关键词： 0.5(Pb_8-xSn_x)In_0.5Te₁₀')" href="#">Ag_0.5(Pb_8-xSn_x)In_0.5Te₁₀ 合成 载流子 热电性能     

A Highly Selective and Sensitive Fluorescent Chemosensor for Aluminum Ions Based on Schiff Base

An efficient “off–on” type fluorescent chemosensor, (E)-N′-(4-(diethylamino)-2-hydroxybenzylidene)-2-hydroxybenzohydrazide (H ₂ L), based on Schiff base for the determination of Al³⁺ has been designed, synthesized, and evaluated. Upon treated with Al³⁺, the fluorescence of H ₂ L was enhanced 45-fold due to the chelation-enhanced fluorescence (CHEF) effect based on the formation of a 1:1 complex between the chemosensor and Al³⁺. Other metal ions, such as Na⁺, K⁺, Mg²⁺, Ca²⁺, Cu²⁺, Ga³⁺, Zn²⁺, Cr³⁺, Cd²⁺, Ag⁺, Fe³⁺, In³⁺, Mn²⁺, Pb²⁺, Co²⁺, and Ni²⁺ had little effect on the fluorescence. The results demonstrate that the chemosensor H ₂ L has stronger affinity with Al³⁺ than other metal ions. The detection limit of H ₂ L for sensing Al³⁺ is 3.60 × 10^?6 M in EtOH–H₂O (3:7, v/v) solution. And the recognizing behavior has been investigated both experimentally and computationally.     

Large enhancement of the thermoelectric Seebeck coefficient for amorphous oxide semiconductor superlattices with extremely thin conductive layers

Herein we demonstrate that amorphous oxide semiconductor (AOS) superlattices composed of a‐In–Zn–O (well) and a‐In–Ga–Zn–O (barrier) layers, fabricated on SiO₂ glass substrate by pulsed laser deposition at room temperature, exhibited an enhanced Seebeck coefficient |S |. The |S | value increases drastically with decreasing a‐In–Zn–O thickness (d_IZO) when d_IZO < ∼5 nm, and reached 73 µV K^–1 (d_IZO = 0.3 nm), which is ∼4 times larger than that of bulk |S |_3D (19 µV K^–1), while it kept its high electrical conductivity, clearly demonstrating that the quantum size effect can be utilized in AOS superlattices. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Defect structure of Cu2+ center in K2SO4‒Na2SO4‒ZnSO4 glasses

The spin Hamiltonian parameters (g factors g _//, g _⊥ and hyperfine structure constants A _//, A _⊥) of Cu²⁺ in K₂SO₄?Na₂SO₄?ZnSO₄ glasses are calculated from the high-order perturbation formulas of 3d⁹ ion in tetragonal octahedral sites. The calculated results are in agreement with the observed values. Since the EPR parameters are sensitive to the local structure of a paramagnetic impurity center, the defect structure of Cu²⁺ center in K₂SO₄?Na₂SO₄?ZnSO₄ glasses is estimated. The validity of results is discussed.     

Thermoelectric properties of Bi2Se3/Bi2Te3/Bi2Se3 and Sb2Te3/Bi2Te3/Sb2Te3 quantum well systems

In this work, we develop a theory of thermoelectric transport properties in two-dimensional semiconducting quantum well structures. Calculations are performed for n-type 0.1 wt.% CuBr-doped Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ and p-type 3 wt.% Te-doped Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ quantum well systems in the temperature range 50–600 K. It is found that reducing the well thickness has a pronounced effect on enhancing the thermoelectric figure of merit (ZT). For the n-type Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ with 7 nm well width, the maximum value of ZT is estimated to be 0.97 at 350 K and for the p-type Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ with well width 10 nm the highest value of the ZT is found to be 1.945 at 440 K. An explanation is provided for the resulting higher ZT value of the p-type system compared to the n-type system.     

Condensation Product of 1-Naphthaldehyde and 3-Aminophenol: Fluorescent “on” Probe for Ce3+and “off” Probe for Dichromate (Cr2O72−)

A new probe (Z)-3-((naphthalen-1-ylmethylene)amino)phenol has been synthesized by condensation reaction between 1-naphthaldehyde and 3-aminophenol for the fluorescent sensing of Ce³⁺ by “on” mode and dichromate (Cr₂O₇^2?) by “off” mode. Metal ions—Ag⁺, Al³⁺, As³⁺, Ba²⁺, Ca²⁺, Cd²⁺, Ce⁴⁺, Co²⁺, Cr³⁺, Cr⁶⁺, Cu²⁺, Fe²⁺, Fe³⁺, Hg²⁺, K⁺, La⁺, Li⁺, Mg²⁺, Mn²⁺, Na⁺, Ni²⁺, Pb²⁺, Zn²⁺and anions Br^?, C₂O₄^2?, CH₃COO^?, Cl^?, CO₃^2?, F^?, H₂PO₄^?, HCO₃^?, HF₂^?, HPO₄^2?, I^?, MnO₄^?, NO₃^?, OH^?, S^2?, S₂O₃^2?, SCN^?, SO₄^2? do not interfere. The limit of detection (LOD) for sensing Ce³⁺ and Cr₂O₇^2? ions are 1.286?×?10^–7 M and 6.425?×?10^–6 M, respectively.

     

Thermoelectric properties of sol-gel derived cobaltite Bi2Ca2.4Co2Oy

Layered misfit cobaltite Bi₂Ca_2.4Co₂O_y has been synthesized by a sol-gel method. This compound exhibits large thermoelectric (TE) power (S_300 K∼170 μV K⁻¹), low resistivity (ρ_300 K∼42 mΩ cm) and relatively small thermal conductivity (κ_300 K∼2.8 W K⁻¹ m⁻¹) at room temperature. Furthermore, the resistivity of this compound displays a metallic behavior above T^?∼150 K with a semiconducting behavior below this temperature. This abnormal behavior in resistivity is analogous to those observed in Sr and Ba based misfit cobaltites. The observed features of the TE have been discussed based on the narrow band model.     

Novel RCo5Ga7 intermetallic compound

The novel RCo₅Ga₇ (R=Y, Tb, Dy, Ho and Er) intermetallic compounds have been synthesized, and their crystallographic and magnetic properties have been studied using X-ray diffraction and magnetic measurement. RCo₅Ga₇ crystallizes in an orthorhombic structure with ScFe₆Ga₆ type. The space group is Immm, and Z=2. According to the structural refinement result, the 2a, 4e, 4f, 4g, 4h, and 8k crystal positions are occupied by 2R, 4Ga^I, 4(Ga^II, Co^I), 4Ga^III, 4(Ga^IV,Co^II), and 8(Co^III,Ga^V), respectively. The RCo₅Ga₇ intermetallic compound can be stabilized in the range of the radius ratio of R_Re/R_(Co,Ga)<1.36. The RCo₅Ga₇ compound exhibits a paramagnetic behavior. The magnetization at 5 K ranges from 28.93 to 40.62 emu/g.     

Thermophysical properties of Cu–In–Sn liquid Pb-free alloys: viscosity and surface tension

The viscosity of a few Cu–In–Sn liquid alloys has been investigated by a number of geometric (Muggianu, Kohler, Toop) and physical thermodynamic models (Kozlov–Romanov–Petrov, Budai–Benko–Kaptay, Schick et al.) and GSM for the cross section (z/y = 1/3) in Pb-free liquid alloy Cu_x–In_y–Sn_z at 1073 K. Moreover, the surface tensions of the same liquid alloys have been investigated by a number of geometric models and the Butler model for the cross section Cu_x–In_y–Sn_z (z/(y + z) = 0, 0.1, 0.3, 0.5, 0.7, 0.9, 1) at the same temperature. The best agreement of the surface tensions was obtained in the Kohler model for x_Cu = 10 at % and the Butler model for x_Cu = 20 at % and x_Cu = 30 at.%, respectively. The best agreement among chosen geometric and physical models and experiment for these selected sections Cu₈₀In₁₅Sn₅, Cu₇₅In₁₅Sn₁₀, Cu₅₅In₇Sn₃₈, Cu₃₃In₅₀Sn₁₇ and Cu₂₆In₅₅Sn₁₉ at 1073 K was obtained for the Budai–Benkö–Kaptay model.     

Nucleophilic substitution reactions promoted by oligoethylene glycols: a mechanistic study of ion‐pair SN2 processes facilitated by Lewis base

We present a mechanistic study for nucleophilic substitution (S_N2) reactions facilitated by multifunctional n‐oligoethylene glycols (n‐oligoEGs) using alkali metal salts MX (M⁺ = Cs⁺, K⁺, X^– = F^–, Br^–, I^–, CN^–) as nucleophilic agents. Density functional theory method is employed to elucidate the underlying mechanism of the S_N2 reaction. We found that the nucleophiles react as ion pairs, whose metal cation is ‘coordinated’ by the oxygen atoms in oligoEGs acting as Lewis base to reduce the unfavorable electrostatic effects of M⁺ on X^–. The two terminal hydroxyl (?OH) function as ‘anchors’ to collect the nucleophile and the substrate in an ideal configuration for the reaction. Calculated barriers of the reactions are in excellent agreement with all experimentally observed trends of S_N2 yields obtained by using various metal cations, nucleophiles and oligoEGs. The reaction barriers are calculated to decrease from triEG to pentaEG, in agreement with the experimentally observed order of efficiency (triEG < tetraEG < pentaEG). The observed relative efficiency of the metal cations Cs⁺ versus K⁺ is also nicely demonstrated (larger [better] barrier [efficiency] for Cs⁺ than for K⁺). We also examine the effects of the nucleophiles (F^–, Br^–, I^–, CN^–), finding that the magnitudes of reaction barriers are F^– > CN^– > Br^– > I^–, elucidating the observation that the yield was lowest for F^–. It is suggested that the role of oxygen atoms in the promoters is equivalent to that of –OH group in bulky alcohols (tert‐butyl or amyl‐alcohol) for S_N2 fluorination reactions previously studied in our lab. Copyright © 2012 John Wiley & Sons, Ltd.