Recent progress in quantitative and high spatial resolution AES

Progress in high resolution Auger electron spectroscopy (HR-AES or scanning Auger microscopy, SAM) during the past few years is characterized by the use of efficient field emission electron sources, parallel detection capabilities and improved data acquisition, storage and processing, thus enhancing spatial resolution (to about 10 nm), signal to noise figure and quantification of elements in different chemical bonding states, e.g. by routinely using factor analysis. Optimized ion sputtering facilities, particularly sample rotation, enable depth profiling with high, depth independent resolution. The basic features of SAM are discussed with respect to EPMA (electron probe micro-analysis), emphasizing fundamental limitations and future developments.     

Summary of ISO/TC 201 Standard XII. ISO 17973:2002—Surface chemical analysis—Medium‐resolution Auger electron spectrometers—Calibration of energy scales for elemental analysis

This International Standard specifies a method for calibrating the kinetic energy scale of Auger electron spectrometers with an uncertainty of 3 eV for general analytical use for identifying elements at surfaces. It is suitable for instruments used in either the direct mode or the differential mode where the resolution is equal to or less than 0.5% and the modulation amplitude for the differential mode, if used, is 2 eV peak to peak. The spectrometer shall be equipped with an inert gas ion gun or other method for sample cleaning and with an electron gun capable of operating at 4 keV or higher beam energy. This International Standard further specifies a calibration schedule. Crown Copyright © 2003. Published by John Wiley & Sons, Ltd.     

Summary of ISO/TC 201 Standard XI. ISO 17974:2002—Surface chemical analysis—High‐resolution Auger electron spectrometers—Calibration of energy scales for elemental and chemical‐state analysis

This International Standard specifies a method for calibrating the kinetic energy scales of Auger electron spectrometers for elemental and chemical‐state analysis at surfaces. It is only applicable to instruments that incorporate an ion gun for sputter cleaning. This International Standard further specifies a method to establish a calibration schedule, to test for the kinetic energy scale linearity at one intermediate energy, to confirm the uncertainty of the scale calibration at one low and one high kinetic energy value, to correct for small drifts of that scale and to define the expanded uncertainty of the calibration of the kinetic energy scale for a confidence level of 95%. This uncertainty includes contributions for behaviours observed in interlaboratory studies but does not cover all of the defects that could occur. This International Standard is not applicable to instruments with kinetic energy scale errors that are significantly non‐linear with energy, to instruments operated at relative resolutions poorer than 0.2% in the constant ΔE/E mode or poorer than 1.5 eV in the constant ΔE mode, to instruments requiring tolerance limits of ±0.05 eV or less or to instruments equipped with an electron gun that cannot be operated in the energy range 5–10 keV. This standard does not provide a full calibration check, which would confirm the energy measured at each addressable point on the energy scale and should be performed according to the manufacturer's recommended procedures. Crown Copyright © 2003. Published by John Wiley & Sons, Ltd.     

超高真空俄歇电子能谱原位加热和GaN热效应研究

An in situ heating system was built for the Auger electron spectroscopy to investigate the thermal effect of Auger lines. A GaN sample was studied in this system. The kinetic energy of Ga LMM and MVV Auger lines were observed to shift negatively with temperature increasing. By using ab initio calculation, the theoretical Ga MVV Auger line shape was fit, which well reflects the inner property of the line. The Auger shift with heating is related with the valence electron rearrangement in the thermal expansion of the local bonds.     

Summary of ISO/TC 201 International Standard ISO 18516:2019 Surface chemical analysis—Determination of lateral resolution and sharpness in beam-based methods with a range from nanometres to micrometres and its implementation for imaging laboratory X-ray photoelectron spectrometers (XPS)

ISO 18516:2019 Surface chemical analysis—Determination of lateral resolution and sharpness in beam-based methods with a range from nanometres to micrometres revises ISO 18516:2006 Surface chemical analysis—Auger electron spectroscopy and X-ray photoelectron spectroscopy—Determination of lateral resolution. It implements three different methods delivering parameters useful to express the lateral resolution: (1) the straight edge method, (2) the narrow line method and (3) the grating method. The theoretical background of these methods is introduced in ISO/TR 19319:2013 Surface chemical analysis—Fundamental approaches to determination of lateral resolution and sharpness in beam-based methods. The revised International Standard ISO 18516 delivers standardized procedures for the determination of the (1) effective lateral resolution by imaging of square-wave gratings, the (2) lateral resolution expressed as the parameter D_12–88 characterizing the steepness of the sigmoidal edge spread function (ESF) determined by imaging a straight edge and (3) the lateral resolution expressed as the full width of half maximum of the line spread function (LSF), w_LSF, determined by imaging a narrow line. The last method also delivers information on the shape of the LSF, which characterizes an individual imaging instrument. Finally, the implementation of all three standardized methods in the field of imaging laboratory X-ray photoelectron spectroscopy (XPS) is shortly presented. This part of the letter is based on the use of a new test sample developed at ETH Zurich, Switzerland. This test sample displays a micrometre scaled pattern motivated by the resolving power of recent imaging XPS instruments.     

Data Preprocessing in Peak Shape Analysis of Auger Electron Spectra

 Factor analysis is an established method of peak shape analysis in Auger electron spectrometry. The influence of different commonly used data preprocessing tools onto the results of factor analysis is demonstrated on AES depth profiles of multilayers and implantation profiles. For the analysis of Auger electron spectra it has been traditional to differentiate spectra by Savitzky and Golay’s method to remove background and to elucidate changes in peak shape. For phosphorus implanted in titanium it is shown that background removal works not ideal so that inelastic losses of the Ti(LMM) Auger peak can affect the result of factor analysis for the P(LVV) peak located at ca. 250 eV lower in kinetic energy. The contribution of such losses to the background can be corrected by shifting the spectra so that the high energy side above the peak equals zero. Numerical differentiation can introduce correlated error into the data set. To diminish edge effects the reduction of filter width at the edges and cutting off the outermost data points is recommended. The precision of spectrum reproduction is considered as a crucial test for the number of principal components. The reliability factor is investigated as a measure for the goodness of spectrum reproduction.     

AES depth profiling with a tilted sample in front of a cylindrical mirror analyzer: quantification and profile shape changes according to an extension of the conventional MRI model

The influence of the tilt angle of a sample in front of a cylindrical mirror analyzer (CMA) on AES depth profiles is calculated with the conventional mixing‐roughness‐information (MRI) depth model and an extended MRI model. While the conventional model works with an average electron escape depth value, the extended model takes into account the intensity from different segments along the azimuth angle corresponding to different escape depth values before summing up for the total, measured intensity. The deviation between both approaches is generally less than 4%, even for the worst case at 47.7° tilt angle. The shape of the profile is slightly different for both approaches. Because, for a CMA with coaxial gun, the sample tilt angle varies as the electron beam incidence angle, the influence of the latter has to be additionally taken into account for quantification of AES. In reasonable agreement with experimental results it is shown that above 45° the Auger peak intensity of Cu (914 eV) increases up to about a factor of two for an incidence angle of 85°. Copyright © 2006 John Wiley & Sons, Ltd.     

Concepts for chemical state analysis at constant probing depth by lab-based XPS/HAXPES combining soft and hard X-ray sources

The greater information depth provided in hard X-ray photoelectron spectroscopy (HAXPES) enables nondestructive analyses of the chemistry and electronic structure of buried interfaces. Moreover, for industrially relevant elements like Al, Si, and Ti, the combined access to the Al 1s, Si 1s, or Ti 1s photoelectron line and its associated Al KLL, Si KLL, or Ti KLL Auger transition, as required for local chemical state analysis on the basis of the Auger parameter, is only possible with hard X-rays. Until now, such photoemission studies were only possible at synchrotron facilities. Recently, however, the first commercial XPS/HAXPES systems, equipped with both soft and hard X-ray sources, have entered the market, providing unique opportunities for monitoring the local chemical state of all constituent ions in functional oxides at different probing depths, in a routine laboratory environment. Bulk-sensitive shallow core levels can be excited using either the hard or soft X-ray source, whereas more surface-sensitive deep core-level photoelectron lines and associated Auger transitions can be measured using the hard X-ray source. As demonstrated for thin Al₂O₃, SiO₂, and TiO₂ films, the local chemical state of the constituting ions in the oxide may even be probed at near-constant probing depth by careful selection of sets of photoelectron and Auger lines, as excited with the combined soft and hard X-ray sources. We highlight the potential of lab-based HAXPES for the research on functional oxides and also discuss relevant technical details regarding the calibration of the kinetic binding energy scale.     

Preferential sputtering observed in Auger electron spectroscopy sputter depth profiling of AlAs/GaAs superlattice using low‐energy ions

Auger electron spectroscopy (AES) sputter depth profiling of an ISO reference material of the GaAs/AlAs superlattice was investigated using low‐energy Ar⁺ ions. Although a high depth resolution of ～1.0 nm was obtained at the GaAs/AlAs interface under 100 eV Ar⁺ ion irradiation, deterioration of the depth resolution was observed at the AlAs/GaAs interface. The Auger peak profile revealed that the enrichment of Al due to preferential sputtering occurred during sputter etching of the AlAs layer only under 100 eV Ar⁺ ion irradiation. In addition, a significant difference in the etching rates between the AlAs and GaAs layers was observed for low‐energy ion irradiation. Deterioration of the depth resolution under 100 eV Ar⁺ ion irradiation is attributed to the preferential sputtering and the difference in the etching rate. The present results suggest that the effects induced by the preferential sputtering and the significant difference in the etching rate should be taken into account to optimize ion etching conditions using the GaAs/AlAs reference material under low‐energy ion irradiation. Copyright © 2005 John Wiley & Sons, Ltd.     

俄歇化学位移及其在表面化学上的应用

从俄歇电子激发过程讨论了化学位移和元素化合价以及电负性的关系, 提供了常用元素在不同化合物中的俄歇电子动能及化学位移数据, 运用俄歇化学位移研究了氧在锌表面的吸附和初始氧化反应, Ti/SiO_2的界面固相反应机理以及摩擦过程中润滑膜的组成和结构.     

铈卤氧化物的ESCA表征（Ⅱ）—Ce的M5N45N45俄歇峰

研究了ＸＰＳ诱导的ＣｅＭ５Ｎ４５Ｎ４５俄歇峰，由于其终态空穴处于芯能级，俄歇峰有较好的分辨率，从ＣｅＭ５Ｎ４５Ｎ４５的俄歇峰可获得中心离子Ｃｅ的电子云密度等信息，发现其俄歇参数与配位体的极化变形程度有关，从而解释了双烯烃定向聚合必须有稀土卤氧键存在的原因。     

Monte Carlo simulation of full energy spectrum of electrons emitted from silicon in Auger electron spectroscopy

A Monte Carlo simulation including surface excitation, Auger electron‐ and secondary electron production has been performed to calculate the energy spectrum of electrons emitted from silicon in Auger electron spectroscopy (AES), covering the full energy range from the elastic peak down to the true‐secondary‐electron peak. The work aims to provide a more comprehensive understanding of the experimental AES spectrum by integrating the up‐to‐date knowledge of electron scattering and electronic excitation near the solid surface region. The Monte Carlo simulation model of beam–sample interaction includes the atomic ionization and relaxation for Auger electron production with Casnati's ionization cross section, surface plasmon excitation and bulk plasmon excitation as well as other bulk electronic excitation for inelastic scattering of electrons (including primary electrons, Auger electrons and secondary electrons) through a dielectric functional approach, cascade secondary electron production in electron inelastic scattering events, and electron elastic scattering with use of Mott's cross section. The simulated energy spectrum for Si sample describes very well the experimental AES EN(E) spectrum measured with a cylindrical mirror analyzer for primary energies ranging from 500 eV to 3000 eV. Surface excitation is found to affect strongly the loss peak shape and the intensities of the elastic peak and Auger peak, and weakly the low energy backscattering background, but it has less effect to high energy backscattering background and the Auger electron peak shape. Copyright © 2014 John Wiley & Sons, Ltd.     

Quantitative surface analysis by X-ray photoelectron spectroscopy and X-ray excited auger electron spectroscopy

It is shown that X-ray excited KLL Auger electron spectra allow it to describe measured signal strengths similarly to X-ray photoelectron signals, thus offering valuable information on the quantitative surface composition of a solid sample. The principal equation and corresponding fundamental parameters are discussed. As a result Auger spectra of C, N, O, F, and Na can be easily used in a multiline approach for quantitative analysis. LMM and MNN spectra give rise to more problems, due to their more complicated structure, uncertainties with regard to the background and the influence of Coster-Kronig transitions. These problems are overcome by the use of empirical ratios of the strongest lines of 2p/LMM or 3d/MNN. Since these ratios are independent of sample composition, they allow it to transform the Auger signal into the corresponding photoelectron signal, provided that a standard sample has been measured. Thus a true additional information is obtained and moreover difficulties in cases of photoelectron spectra with overlapping lines from other chemical elements can be overcome.Dedicated to Professor Günther Tölg on the occasion of his 60th birthday     

Are measured values of the Auger parameter always independent of charging effects?

In x‐ray photoelectron spectroscopy (XPS) the Auger parameter is often used to study the electronic properties of elements, particularly in insulator materials, because this parameter is assumed to be independent of charging effects. In this paper we report on subtle differences in sample structure and experimental conditions for which the sample potential may not remain constant during the measurements for some spectrometers or experimental arrangements; for such conditions the Auger parameter is not independent of charging. We compare a series of measurements with insulating plate substrates of Al₂O₃ on which different amounts of SnO₂ and Au were deposited. X‐ray photoelectron spectra were collected for different conditions of the sample that was placed either grounded or left floating on a metallic sample holder during measurement. It is found that the Auger parameter is independent of the experimental conditions for Au but substantial differences were found for deposited SnO₂. Surprisingly, measurement artifacts due to charging appeared in the Auger parameter for Sn when the sample holder was grounded but not when it was left floating. In the grounded samples differences up to 0.6 eV in the Auger parameter for Sn were found with respect to the actual value of this parameter measured with substrates where charging effects were not significant. Because no differences in peak broadening have been observed under different measurement conditions, it has been assumed that the shift was not caused by a conventional differential charging phenomenon. Considering the different response of the substrate and the deposited layer on stabilizing the charge when the sample is grounded, we have worked out a possible explanation to account for the observed artifacts. Instrumental specifications should be optimized very carefully, especially if (as here) relatively high charging shifts point to a non‐optimum self‐biasing of the surface potential at the insulating samples. Copyright © 2003 John Wiley & Sons, Ltd.     

Incident angle and energy dependences of low‐energy Ar+ ion sputtering of GaAs/AlAs multilayered system

Dependences of the depth resolution in Auger electron spectroscopy sputter‐depth profiling of a GaAs/AlAs superlattice reference material on the incident angle and energy of primary Ar⁺ ions were investigated. The results revealed that the depth resolution is improved for the lower primary energy as a square root of the primary energy of ions at both the incident angles of 50° and 70° , except for 100 eV at 50° , where the significant deterioration of the depth resolution is induced by the preferential sputtering of As in AlAs, and the difference in the etching rate between GaAs and AlAs. The deterioration of the depth resolution, i.e. the difference in the etching rate and the preferential sputtering, observed for 100 eV at 50° was suppressed by changing the incident angle of ions from 50° to 70° , resulting in the high‐depth resolution of ～1.3 nm. The present results revealed that the glancing incidence of primary ions is effective to not only reducing the atomic mixing but also suppressing the difference in the etching rates between GaAs and AlAs and the preferential sputtering in the GaAs/AlAs multilayered system. The results also suggest that careful attention is required for the optimization of conditions of sputter‐depth profiling using GaAs/AlAs superlattice materials under low‐energy ion irradiation. Copyright © 2009 John Wiley & Sons, Ltd.     

Spatial resolution limitation in Auger microanalysis of compounds

The width of the resolved gap between the features of Auger images was calculated by Rayleigh criterion. When the threshold contrast is provided, this width is almost independent of the examined specimen nature and is defined only by probing electron beam diameter. The relation between the irradiation dose, contrast and spatial resolution is deduced. The flexible dependence allowing to evaluate both the real and maximum attainable spatial resolution of Auger images is obtained.     

沼气成分分析器的研制

本文在化学吸收原理的基础上,利用测容法和直接法相结合的测定方式研制成功一种同时测定沼气中甲烷,二氧化碳,硫化氢和氧等成分的便携式分析器。分析器一次进样50ml,仅需1.5min左右便可完成上述4种成分的测定。与传统的利用化学吸收厥理制成的分析器相比,该分析器具有结构简单,操作方便,分析快速,仪器价格低,携带方便等优点。分析器所测定的成分,含量范围和准确度完全满足现场测试的要求,可以广泛地用于沼气工程和广大农村沼气基层单位的沼气测试工作     

Novel floating‐type low‐energy ion gun for high‐resolution depth profiling in ultrahigh vacuum

A floating‐type low‐energy ion gun (FLIG) has been developed for high‐resolution depth profiling in ultrahigh vacuum (UHV). This UHV‐FLIG allows Ar⁺ ions of primary energy down to 50 eV to be provided with high current intensity. The developed UHV‐FLIG was sufficiently compact, being ～30 cm long, to be attached to a commercial surface analytical instrument. The performance of the UHV‐FLIG was measured by attaching it to a scanning Auger electron microprobe (JAMP‐10, Jeol), the base pressure of which in the analysis chamber was ～1 × 10^?7 Pa. The vacuum condition of ～5 × 10^?6 Pa was maintained during operation of the UHV‐FLIG without a differential pumping facility. Current density ranged from 41 to 138 µA cm^?2 for Ar⁺ ions of primary energy 100–500 eV at the working distance of 50 mm. This ensures a sputtering rate of ～10 nm h^?1 with 100 eV Ar⁺ ions for Si, leading to depth profiling of high resolution in practical use. Copyright © 2003 John Wiley & Sons, Ltd.     

Summary of ISO/TC 201 Technical Report: ISO/TR 19319:2013 – Surface chemical analysis – Fundamental approaches to determination of lateral resolution and sharpness in beam‐based methods

This Technical Report revises ISO/TR 19319:2003 —Surface chemical analysis—Auger electron spectroscopy and X‐ray photoelectron spectroscopy—Determination of lateral resolution, analysis area and sample area viewed by the analyser. The revised Technical Report gives a short introduction to basic models of image formation and introduces functions which characterize the performance of imaging instruments with respect to lateral resolution and sharpness. The determination of lateral resolution by imaging of square‐wave gratings and the determination of sharpness by imaging of narrow stripes and straight edges are described in detail. Finally, physical factors affecting lateral resolution, analysis area and sample area viewed by the analyser are discussed. Copyright © 2013 John Wiley & Sons, Ltd.     

Sputter-induced cross-contamination in analytical AES and XPS instrumentation: utilization of the effect for the in situ deposition of ultrathin functional layers

Cross-contamination is observed on sample surfaces by Auger electron spectroscopy and X-ray photoelectron spectroscopy if multiple samples are mounted on one sample holder and a neighbouring sample was sputter depth profiling. During sputter depth profiling, sputtered material is deposited on inner surfaces of the instrument. In a secondary sputter process, which is due to species leaving the primary sputter target with higher kinetic energy, the previously deposited material is transported from the inner surfaces to the other samples mounted on the sample holder. This reflective sputtering is utilized to deposit ultrathin layers on sample surfaces for X-ray photoelectron spectroscopy binding energy referencing purposes and to build up ultrathin conductive layers to make possible Auger electron spectroscopy measurements on insulating samples.