Lower friction and higher wear resistance of fluorine‐incorporated amorphous carbon films

Plasma‐enhanced chemical vapor deposition was employed to fabricate hydrogenated amorphous carbon (a‐C:H) films and fluorine‐doped hydrogenated amorphous (a‐C:H:F) carbon films. For comparison purpose, the a‐C:H films were treated with CF₄ plasma. The bonding structure and tribological behavior of the films were investigated. The results indicate that the F presented mainly in the forms of C–F₃, C–F and C–F₂ groups in both the a‐C:H:F film and the surface CF₄ plasma processed hydrogenated amorphous carbon (F‐P‐a‐C:H) films. Moreover, the a‐C:H:F films, because of the transformation of sp³ to sp², possess a lower friction coefficient than that of the F‐P‐a‐C:H films. Copyright © 2013 John Wiley & Sons, Ltd.     

Initial formation of contact layers on Ni/SiC samples studied by XPS

This study deals with the quantitative assessment of the coverage and thickness of Ni silicide films formed during annealing of SiC substrates with sputtered thin films of Ni. The analytical approach involves the use of XPS and depth profiling by means of successive ion etchings and XPS analyses. For either 3 or 6 nm initial Ni film thickness, a 10 nm Ni₂Si product is formed. On top of this product, the C released is accumulated in a very thin (1–2 nm) film. In neither case, the Ni₂Si covers the whole surface, although the coverage is almost complete (～90%) in the latter case. For the greater initial Ni‐film thickness of 17 nm, the thickness of the Ni₂Si product corresponds well to the value of 25 nm expected from the Ni/Ni₂Si stoichiometric relationship. This thickness is significantly greater than a critical level and the film covers the whole surface. Carbon is similarly accumulated in a very thin layer on the top surface, although the major part of C (～70%) is found inside the main reaction product layer. Copyright © 2008 John Wiley & Sons, Ltd.     

Effects of Ar/H/N‐ion bombardment on the surface free energy and friction behavior of the fullerene‐like hydrogenated carbon (FL‐C:H) film

The surface modification of the fullerene‐like hydrogenated carbon (FL‐C:H) film was achieved by bombardment using Ar, H, and N ions, respectively. A systematic comparison of X‐ray photoelectron spectroscopy (XPS) and Fourier transformation infrared(FTIR) spectra was made between the FL‐C:H film and ion‐bombarded films. The results show that ion bombardment resulted in the increase of sp³ C content, specially, new C? N bonds were formed for N‐ion‐bombarded film. The contact angle (CA) and friction coefficient of those films were measured. The surface free energy evaluated from the contact angle increased for ion‐bombarded films, and the most obvious increase was obtained for N‐ion‐bombarded film. The friction coefficient decreased for H‐ion‐bombarded film whereas it increased for N‐ion‐bombarded film, and the friction coefficient of Ar‐ion‐bombarded film was close to that of the FL‐C:H film. Copyright © 2008 John Wiley & Sons, Ltd.     

Surface oxidation process of a diamond‐like carbon film analyzed by difference X‐ray photoelectron spectroscopy

Difference X‐ray photoelectron spectroscopy (D‐XPS) revealed the surface oxidation process of a diamond‐like carbon (DLC) film. Evaluation of surface functional groups on DLC solely by the C 1s spectrum is difficult because the spectrum is broad and has a secondary asymmetric lineshape. D‐XPS clarified the subtle but critical changes at the DLC surface caused by wet oxidation. The hydroxyl (C―OH) group was dominant at the oxidized surface. Further oxidized carbonyl (C?O) and carboxyl (including carboxylate) (COO) groups were also obtained; however, the oxidation of C?O to COO was suppressed to some extent because the reaction required C―C bond cleavage. Wet oxidation cleaved the aliphatic hydrogenated and non‐hydrogenated sp² carbon bonds (C―H sp² and C―C sp²) to create a pair of C―OH and hydrogenated sp³ carbon (C―H sp³) bonds. The reaction yield for C―H sp² was superior at the surface, suggesting that the DLC film was hydrogen rich at the surface. Oxidation of aromatic sp² rings or polycyclic aromatic hydrocarbons such as nanographite to phenols did not occur because of their resonance stabilization with electron delocalization. Non‐hydrogenated sp³ carbon (C―C sp³) bonds were not affected by oxidation, suggesting that these bonds are chemically inert. Copyright © 2014 John Wiley & Sons, Ltd.     

The chemical composition and bonding structure of amorphous hydrogenated carbon nitride film on aluminum surface deposited by electrodeposition

Amorphous hydrogenated carbon nitride films with excellent adhesion to the substrates were deposited on the surfaces of aluminum plates by electrodeposition with acetonitrile as carbon source. The as‐obtained films were detailed characterized by Raman, XPS and FTIR. The results show that the as‐obtained films are mainly made up of sp2 C, sp3 C, C? N, C?N bonds and a spot of sp3? CH₂, sp3? CH₃, sp3? CH and sp2? CH bonds. The atomic ratio of N/C is evaluated to be about 2.98 at.% by XPS. Raman analysis indicated that I_D/I_G ratios decreased from 0.827 to 0.675 when the deposition time increased from 10 to 20 h. At the end, on the basis of the detailed analysis, results of Raman, FTIR and XPS, the possible deposition mechanism was discussed. Copyright © 2010 John Wiley & Sons, Ltd.     

Growth and characterization of ultrathin carbon films on electrodeposited Cu and Ni

Ultrathin carbon films were grown on different types of metallic substrates. Free‐standing foils of Cu and Ni were prepared by electroforming, and a pure Ni film was obtained by galvanic displacement on a Si wafer. Commercial foil of Ni 99.95% was used as a reference substrate. Carbon films were grown on these substrates by chemical vapour deposition in a CH₄‐H₂ atmosphere. Obtained films were characterized by Raman spectroscopy, X‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, and ultraviolet photoemission spectroscopy. The XPS at grazing collection angle was used to determine the thickness of carbon films. Depending on the deposition parameters, the films of graphene or graphite were obtained on the different substrates. The uniformity of graphene and its distribution over the sample area were investigated from Raman data, optical images, and XPS chemical maps. The presence of graphene or graphite in the films was determined from the Raman spectra and Auger peak of C KVV. For this purpose, the D parameter, which is a fingerprint of carbon allotropes, was determined from C KVV spectra acquired by using X‐rays and electron beam. A formation of an intermediate layer of metal hydroxide was revealed in the samples with graphene overlayer.     

The structure and tribological properties of aluminum/carbon nanocomposite thin films synthesized by reactive magnetron sputtering

Hydrogenated nanocomposite aluminum/carbon thin films (Al/a‐C:H) were fabricated on stainless steel and silicon wafer substrates via unbalanced reactive magnetron sputtering from an Al target in CH₄/Ar plasma. The composition and structure of Al/a‐C:H films were investigated by high‐resolution transmission electron microscope (HRTEM), XPS and micro‐Raman spectroscopy. Nanoindenter, interferometer and ball‐on‐disc tribometer were carried out to evaluate the hardness, internal stress and tribological properties of Al/a‐C:H films. HRTEM observations confirmed that the metallic Al nanocrystallites were uniformly dispersed in the amorphous carbon matrix. XPS and Raman analyses indicated that the sp² content increased with the increase of Al content in the films. Nanoindenter and interferometer tests exhibited that the uniform incorporation of Al nanocrystallites can diminish drastically the magnitude of internal stress with maintaining the higher hardness of as‐deposited films. Especially, the ball‐on‐disc tribometer measurements revealed that the nanocomposite film with 2.3 at.% Al content exhibited relatively better wear resistance and self‐lubrication performance with a friction coefficient of 0.06 and wear rate of 3.1 × 10^?16 m³/ N·m under ambient air, which can be attributed to the relatively higher hardness, the formation of continuous graphitized transfer film on counterface and the reduced reaction of oxygen with carbon. Copyright © 2010 John Wiley & Sons, Ltd.     

Investigation on Electronic Property of Passive Film on Nickel in Bicarbonate/Carbonate Buffer Solution

The electronic properties of passive film formed on nickel in bicarbonate/carbonate buffer solution were studied by electrochemical impedance spectra (EIS) and Mott‐Schottky plot. The film composition was analyzed by X‐ray photoelectron spectroscopy (XPS). The results showed that passive film exhibited p‐type semi‐conductive character, and the acceptor density (N_A) decreased with increasing potential, prolonging time, decreasing temperature, increasing pH value and decreasing chloride/sulfur ions concentration. The transfer resistance and film resistance increased with the above factors changing. XPS results showed that passive film was composed of NiO and a little amount of Ni₂O₃.     

One‐step electrodeposition of amorphous carbon films containing WO3 with high conductivity and good wettability

Tungsten trioxide‐incorporated hydrogenated amorphous carbon (WO₃/a‐C:H) films have been fabricated on a single‐crystal silicon wafer by liquid phase electrodeposition using methanol as carbon source and tungsten carbonyl as incorporated reagent. The morphology, composition and structure of the films have been investigated by SEM, XPS, Raman scattering spectroscopy, Fourier transform infrared spectroscopy (FTIR) and Transmission electron microscope (TEM), respectively. The effects of WO₃ incorporation on the electrical and wetting properties were studied in detail. The characterization results showed that tungsten trioxide nanocrystalline particles with diameters in the range of 10–20 nm were homogenously embedded in the amorphous carbon films. Also, the electrical conductivity and wetting ability of the films were strongly improved due to the contribution of the tungsten trioxide. Copyright © 2010 John Wiley & Sons, Ltd.     

Structural,compositional and hardness properties of hydrogenated amorphous carbon nitride thin films synthesized by dense plasma focus device

The hydrogenated amorphous carbon nitride (a‐CN_x:H) thin films were synthesized on the SS‐304 substrates using a dense plasma focus device. The a‐CN_x:H thin films were synthesized using CH₄/N₂ admixture gas and 20 focus deposition shots on substrates placed at different distances from the anode top. X‐ray photoelectron spectroscopy and Raman analysis confirmed different C–N bonding in the a‐CN_x:H thin films. A decrease in the N/C ratio as well as the sp³/sp² ratio with an increase in the substrate distance has been observed. The higher amount of C–N formation for the film synthesized at 10 cm is observed which decreases with increasing distance. The X‐ray photoelectron spectroscopy and Raman analysis affirmed the C ≡ N presence in all the thin films synthesized at different distances. The morphology of the synthesized a‐CN_x:H thin films showed nanoparticles and nanoparticle clusters formation at the surface. The hardness results showed comparatively lower hardness of the a‐CN_x:H thin films due to the presence of C ≡ N. The C–N formation with lower amount of C ≡ N and a higher N/C ratio as well as a higher sp³/sp² ratio for the films synthesized at 10 cm show reasonably higher hardness. Copyright © 2016 John Wiley & Sons, Ltd.     

XPS calibration study of thin‐film nickel silicides

This paper presents a systematic X‐ray photoelectron spectroscopy (XPS)study of the Ni silicides Ni₃Si, Ni₃₁Si₁₂, Ni₂Si, NiSi and NiSi₂ produced by annealing of sputtered thin films. The in situ XPS study focuses on both the core level peaks and Auger peaks. The peak positions, shapes, satellites as well as Auger parameters are compared for different silicides. The factors that influence the Ni core level peak shifts are discussed. The Ni 2p_3/2 peak shape and satellites are correlated with the valence band structure. The effect of argon ion etching on surface composition and chemical states is also investigated. Copyright © 2009 John Wiley & Sons, Ltd.     

Electrochemical Behavior of a Glassy Carbon Electrode Chemically Modified with Nickel Pentacyanonitrosylferrate in Presence of Sulfur Compounds

The glassy carbon electrode was modified with a nickel pentacyanonitrosylferrate film by electrodeposition of Ni and subsequent derivatization with NaPCNF. The film was characterized by XPS and electrochemical methods. Cyclic voltammetry of the NiPCNF onto the GC shows a redox couple (Fe^III/Fe^II) with E°′ of 538 mV (I_pa/I_pc around 1) and ΔE_p of 93 mV in 0.5 mol L^?1 KNO₃, with a diffusion‐controlled process. There was a decrease of anodic peak currents of the film in the presence of sulfide and 2‐propanethiol due to a precipitation reaction on the film surface by nucleophilic attack.     

Fabrication of Acid Violet 34/Nickel Hydroxide Ultrathin Film and Its Electrocatalytic Performance for Glucose

This article reports the fabrication of Acid Violet 34 (AV34)/nickel hydroxide nanosheets ultrathin film on the glassy carbon electrode (GCE) via the electrostatic layer‐by‐layer (LBL) technique, and its electrocatalytic oxidation for glucose was demonstrated. UV‐vis absorption and electrochemical impedance spectra indicate the uniform deposition of the LBL film, with a continuous and smooth film surface observed by SEM and AFM. The electrochemical performance of the ultrathin film was studied by cyclic voltammetry and chronoamperometry. The (AV34/Ni(OH)₂)₅ ultrathin film modified electrode displays a fast direct electron transfer attributed to the Ni²⁺/Ni³⁺ redox couple as well as remarkable electrocatalytic activity towards the oxidation of glucose. The linear response was obtained in the range 0.5–13.5 mM (R=0.9994) with a low detection limit (14 µM), high sensitivity (25.9 µA mM^?1 cm^?2), rapid response (less than 1 s) and excellent anti‐interference properties to the species including ascorbic acid (AA), uric acid (UA), acetamidophenol (AP) and structurally related sugars. Therefore, the AV34/Ni(OH)₂ ultrathin film can be potentially used as a feasible electrochemical sensor for the determination of glucose.     

Tritopic NHC Precursors: Unusual Nickel Reactivity and Ethylene Insertion into a C(sp3)–H Bond

The imidazolium chloride [C₃H₃N(C₃H₆NMe₂)N{C(Me)(=NDipp)}]Cl ( 1 ; Dipp=2,6‐diisopropyl phenyl), a potential precursor to a tritopic N^imineC^NHCN^amine pincer‐type ligand, reacted with [Ni(cod)₂] to give the Ni^I‐Ni^I complex 2 , which contains a rare cod‐derived η³‐allyl‐type bridging ligand. The implied intermediate formation of a nickel hydride through oxidative addition of the imidazolium C−H bond did not occur with the symmetrical imidazolium chloride [C₃H₃N₂{C(Me)(=NDipp)}₂]Cl ( 3 ). Instead, a Ni−C(sp³) bond was formed, leading to the neutral N^imineCHN^imine pincer‐type complex Ni[C₃H₃N₂{C(Me)(=NDipp)}₂]Cl ( 4 ). Theoretical studies showed that this highly unusual feature in nickel NHC chemistry is due to steric constraints induced by the N substituents, which prevent Ni−H bond formation. Remarkably, ethylene inserted into the C(sp³)−H bond of 4 without nickel hydride formation, thus suggesting new pathways for the alkylation of non‐activated C−H bonds.     

Non‐hydrogenated amorphous germanium carbide with adjustable microstructure and properties: a potential anti‐reflection and protective coating for infrared windows

Amorphous non‐hydrogenated germanium carbide (a‐Ge_1?xC_x) films have been deposited using magnetron co‐sputtering technique by varying the sputtering power of germanium target (P_Ge). The effects of P_Ge on composition and structure of the a‐Ge_1?xC_x films have been analyzed. The FTIR spectrum shows that the C–Ge bonds were formed in the a‐Ge_1?xC_x films according to the absorption peak at ~610 cm^?1. The Raman results indicate that the amorphous films also contain both Ge and C clusters. The XPS results reveal that the carbon concentration decreased as P_Ge increased from 40 to 160 W. The fraction of sp³ C–C bonds remains almost constant when increasing P_Ge from 40 to 160 W. The sp² C–C content of a‐Ge_1?xC_x film decreases gradually to 35.9% with P_Ge up to 160 W. Nevertheless, sp³ C–Ge sites rose with increasing P_Ge. Furthermore, the hardness and the refractive index gradually increased with increasing P_Ge. The excellent optical transmission of annealed a‐Ge_1–xC_x double‐layer coating at 400 °C suggests that a‐Ge_1?xC_x films can be used as an effective anti‐reflection coating for the ZnS IR window in the wavelength region of 8–12 µm, and can endure higher temperature than hydrogenated amorphous germanium carbide do. Copyright © 2012 John Wiley & Sons, Ltd.     

C–C bridged Ni(II) complexes bearing β‐keto‐9‐fluorenyliminato ligands prepared by different in situ bonding mechanisms and their use in catalytic (co)polymerization of norbornene and styrene

Two C–C bridged Ni(II) complexes bearing β‐keto‐9‐fluorenyliminato ligands with electron‐withdrawing groups (─CF₃), Ni{PhC(O)CHC[N(9‐fluorenyl)]CF₂}₂ (Ni 1 ) and Ni{CF₃C(O)CHC[N(9‐fluorenyl)]Ph}₂ (Ni 2 ), were synthesized by metal coordination reaction and different in situ bonding mechanisms. The C–C bridged bonds of Ni 1 were formed by in situ intramolecular trifluoromethyl and 9‐fluorenyl carbon–carbon cross‐coupling reaction and those of Ni 2 were formed by in situ intramolecular 9‐fluorenyl carbon–carbon radical coupling reaction mechanism. The obtained complexes were characterized using ¹H NMR spectroscopy and elemental analyses. The crystal and molecular structures of Ni 1 and Ni 2 with C–C bridged configuration were determined using X‐ray diffraction. Ni 1 and Ni 2 were used as catalysts for norbornene (NB) polymerization after activation with B(C₆F₅)₃ and the catalytic activities reached 10⁶ g_polymer mol_Ni^?1 h^?1. The copolymerization of NB and styrene catalyzed by the Ni 1 /B(C₆F₅)₃ system showed high activity (10⁵ g_polymer mol_Ni^?1 h^?1) and the catalytic activities decreased with increasing feed content of styrene. All vinyl‐type copolymers exhibited high molecular weight (10⁴ g mol^?1), narrow molecular weight distribution (M_w/M_n = 1.71–2.80), high styrene insertion ratios (11.13–50.81%) and high thermal stability (T_d > 380°C) and could be made into thin films with high transparency in the visible region (400–800 nm).     

Investigation of Fe−Ni Mixed‐Oxide Catalysts for the Reduction of NO by CO: Physicochemical Properties and Catalytic Performance

A series of Fe?Ni mixed‐oxide catalysts were synthesized by using the sol–gel method for the reduction of NO by CO. These Fe?Ni mixed‐oxide catalysts exhibited tremendously enhanced catalytic performance compared to monometallic catalysts that were prepared by using the same method. The effects of Fe/Ni molar ratio and calcination temperature on the catalytic activity were examined and the physicochemical properties of the catalysts were characterized by using XRD, Raman spectroscopy, N₂‐adsorption/‐desorption isotherms, temperature‐programmed reduction with hydrogen (H₂‐TPR), temperature‐programmed desorption of nitric oxide (NO‐TPD), and X‐ray photoelectron spectroscopy (XPS). The results indicated that the reduction behavior, surface oxygen species, and surface chemical valence states of iron and nickel in the catalysts were the key factors in the NO elimination. Fe_0.5Ni_0.5O_x that was calcined at 250 °C exhibited excellent catalytic activity of 100 % NO conversion at 130 °C and a lifetime of more than 40 hours. A plausible mechanism for the reduction of NO by CO over the Fe?Ni mixed‐oxide catalysts is proposed, based on XPS and in situ diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) analyses.     

Structure evolution of hydrogenated carbon films from amorphous carbon to fullerene‐like nanostructure

A–C:H (hydrogenated amorphous carbon) films were deposited by pulsed direct‐current (d.c.) plasma enhanced chemical vapor deposition on silicon substrates. This study investigated the structural and mechanical evolution of the as‐deposited films with fullerene‐like nanostructure. The results showed that pulsed d.c. negative bias (?500 ~ ?1000 V) signally influenced the growth rate, hardness, surface roughness, sp³ content, and friction behavior of the films. As the pulsed d.c. negative bias voltage increased, the sp³ content, surface roughness, hydrogen content and the friction coefficient of the films decreased; however, the growth rate and the hardness increased. The films deposited at ?1000 V with fullerene‐like microstructure display a nanohardness of about 19.7 GPa and the smallest friction coefficient (~0.06). The evolution on mechanical and structural properties of the films are explained by the a–C:H growth mechanism based on the interaction on plasma‐surface interface and the subsurface reactions in the film. Copyright © 2014 John Wiley & Sons, Ltd.     

Two Supramolecular Nickel(II) Complexes: Syntheses,Crystal Structures and Solvent Effects

Two nickel(II) complexes, namely {[NiL(MeOH)(μ‐OAc)]₂Ni} · 2CH₂Cl₂ · 2MeOH ( 1 ) and {[NiL(EtOH)(μ‐OAc)]₂Ni} · 2EtOH ( 2 ) {H₂L = 5, 5′‐dimethoxy‐2, 2′‐[(ethylene)dioxybis(nitrilomethylidyne)]diphenol}, were synthesized and structurally characterized. Two trinuclear Ni^II complexes are both hexacoordinate around the central Ni^II atoms, showing octahedral coordination arrangements, and each complex comprises three divalent Ni^II atoms, two deprotonated L^2– ligands, in which four μ‐phenoxo oxygen atoms forming two [NiL(X)] (X = MeOH or EtOH) units, and coordinated and non‐coordinated solvent molecules. Complex 1 exhibits a 2D supramolecular network through intermolecular O–H ··· O, C–H ··· O and C–H ··· π interactions, whereas complex 2 forms an infinite 1D chain by intermolecular C–H ··· O hydrogen bonding interactions.     

Influence of deposition pressure on hydrogenated amorphous carbon films prepared by d.c.‐pulse plasma chemical vapor deposition

Hydrogenated amorphous carbon films (a‐C : H) were prepared by d.c.‐pulse plasma chemical vapor deposition using CH₄ and H₂ gases. The microstructure and hardness of the resulting films were investigated at different deposition pressures (6, 8, 11, 15, and 20 Pa). The growth rate increased sharply from 3.2 to 10.3 nm/min with increasing the pressure from 6 to 20 Pa. According to Raman spectra, XPS, and Fourier transform infrared analysis, the films deposited at the pressure of 6 and 8 Pa have high sp³ content and show typical diamond‐like character. However, the microstructures and bond configuration of the films deposited at 11, 15, and 20 Pa have high sp² content and favored fullerene‐like nanostructure. The hardness and sp² content were shown to reach their minimum values simultaneously at a deposition pressure of 8 Pa and then increased continuously. The film with fullerene‐like nanostructure obtained at 20 Pa displays a high Raman I_D/I_G ratio (~1.6), and low XPS C 1s binding energy (284.4 eV). The microstructural analysis indicates that the films are composed of a hard and locally dense fullerene‐like network, i.e. a predominantly sp²‐bonded material. The rigidity of the films is basically provided by a matrix of dispersed cross‐linked sp² sites. Copyright © 2012 John Wiley & Sons, Ltd.