GaN直纳米线的光学性能

对 Ga N直纳米线的拉曼光谱及光致发光光谱进行了研究。拉曼光谱表明 ,与计算值相比 ,E2 ( high)声子频率在 560 cm- 1有 -9cm- 1的移动 ,这种声子频率显示出向低能带频移及带变宽的特征 ,是由于纳米尺寸效应所引起的结果。体系的光致发光光谱在 3 44 .8nm附近的近带隙发光 ,与文献报道的 Ga N体材料的数值3 65nm相比有一蓝移 ,这是由于量子限制效应造成的     

左手材料纤芯双包层光纤的传输特性

对纤芯为左手材料,内包层和外包层都为右手材料的双包层光纤进行了分析.在弱导情况下,且不考虑介质损耗,由亥姆霍兹方程出发,得到了HE、EH、TE和TM导模的色散方程,并在远离截止条件下,对其进行简化.所有的TE和TM模都是简并的.分别讨论了内包层折射率和厚度对该左手材料光纤最低阶导模的影响,画出了各自的色散曲线,并和右手材料光纤导模相应色散曲线进行了比较,发现左手材料光纤的低阶导模具有反常的色散特性.     

ZnO薄膜的光学性质研究

采用直流反应磁控溅射方法在玻璃基底上成功地淀积ｃ轴取向性好的ＺｎＯ薄膜。经过优化计算，获得并分析了不同氧分压下制备的ＺｎＯ薄膜的折射率ｎ和消光系数ｋ的数值；同时得到了吸收光学带隙Ｅｏｐｔ，用能带模型解释了Ｅｏｐｔ的变化规律。     

PM2.5气溶胶光学特性研究

利用FA-3型Anderson撞击式气溶胶粒度分布采样器采集大气中的可吸入颗粒物。在实验室使用光学测量系统对粒径低于PM2.5的气溶胶颗粒物进行透过率测量。结果表明,透过率随气溶胶粒子粒径的增大具有逐渐增加的趋势。粒径低于PM2.5的气溶胶颗粒与PM10粒径范围内的透过率相比,具有明显的波长选择性。     

One‐phonon resonant electron Raman scattering in a cylindrical GaAs/AlAs quantum dot

We have presented a theoretical calculation of the differential cross section for the electron Raman scattering process associated with the interface optical phonon modes in cylindrical GaAs quantum dots (QDs) with a AlAs matrix. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. The selection rules for the processes are studied. Singularities are found to be sensitively size‐dependent, and, by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for QDs with different size is presented. Copyright © 2013 John Wiley & Sons, Ltd.     

Optical Properties of Semiconducting Ruthenium Silicide

The optical properties of ruthenium silicide Ru₂Si₃ have been studied theoretically and experimentally. The energy band spectrum and optical properties were simulated with the aid of the firstprinciple selfconsistent method of linear attached plane waves. The spectral dependence of the absorption coefficient in the 0.52.2 eV energy range was measured experimentally by the photothermal refractive spectroscopy method. It is established that ruthenium silicide is a directgap semiconductor having an energy gap of 0.84 eV and a low oscillator strength of the first direct transition.     

镨掺杂碲铌铅玻璃的光学性能

研究了掺稀土离子Pr^3 的碲铌铅玻璃的吸收光谱,色度色散和非线性光学性能。结果表明：高浓度的Pr^3 引入到碲铌铅玻璃系统后,仍能够形成均匀透明的玻璃,该玻璃具有高的折射率和非线性折射率。     

亚酞菁薄膜的光谱和光存储性质研究

利用真空蒸镀法制备了一种新的三硝基溴硼亚酞菁（BTN－SubPc)薄膜。在室温下测试了该亚酞菁染料在溶液和薄膜态的吸收光谱、薄膜态的反射和透过光谱，发现该薄膜在500nm-650nm波长范围内具有优良的吸收和反射特性。在632.8nm光盘静态测试仪上测试了覆盖有金属反射层的BTN－SubPc薄膜的静态光存储性能，结果表明，用较小功率和较窄脉宽的激光辐照膜片时，可获得大于30％的反射率对比度，显示出该材料用作短波长光存储介质（特别是用于可录型数字多用光盘）的巨大潜力。     

Electronic Correlation Effects on the Optical Properties of SiC,BeO and Boron Nitride Nanotubes and Monolayers

We present numerical calculation of the impact of electron-electron interaction on the behavior of density of states and optical properties of BeO, SiC and Boron-Nitride nanotubes and sheets. Hubbard model hamiltonian is applied to describe the dynamics of electrons on the lattice structure of theses compounds. The excitation spectrum of the system in the presence of local electronic interactions has been found using mean field approach. We find the band gap width in both optical absorption and density of states reduces with local Hubbard electronic interaction parameter. The absorption spectra exhibits the remarkable peaks, mainly owing to the divergence behavior of density of states and excitonic effects. Also we compare optical absorption frequency behavior of BeO, SiC and Boron-Nitride nanotubes with each other. Furthermore we investigate the optical properties of BeO and SiC sheets. A novel feature of optical conductivity of these structures is the decrease of frequency gap in the optical spectrum due to electronic interaction.     

超薄氢化非晶锗膜的结构与光电性质

通过PECVD制备出了不同厚度的a-Ge∶H膜,采用Raman光谱对样品进行了结构表征,由椭圆偏振光谱仪得到样品的厚度和光学常数,并计算了样品的光学带隙。由变温电导率分析了薄膜的电学输运性质,结果表明,载流子的传输机制为扩展态电导。进而利用变温PL谱研究了薄膜的发光性能,发现其发光峰在1.63 μm处;随着膜厚的减小,峰位和峰形都有改变,且强度明显提高。进一步分析发现,随着膜厚的减小非辐射复合跃迁的激活能增大,从而导致辐射复合过程增强。     

液芯手征光纤的研制

成功地研制出了液芯手征光纤,且对其偏振响应特性作了测试,发现同块状手征介质相比,出射光的偏振度及其消光轴都发生了变化。     

CuSin 与CuSi-n（n=4~10）团簇电子结构和光学性质的理论研究

基于密度泛函的B3LYP/6-311+G (d)方法研究基态结构CuSin(n=4~10)和 CuSin阴离子团簇的电子结构和紫外吸收谱。计算结果表明：(1)中性CuSin 团簇的带隙要比阴离子团簇的带隙要小,说明阴离子团簇比中性的要稳定;(2)阴离子CuSi5团簇要比相邻的其他团簇稳定;(3)紫外吸收谱可看出中性 CuSin团簇属弱吸收而阴离子则表现出很强的吸收。对阴离子来说,随着硅原子的增加有红移现象发生。     

SiO2和HfO2薄膜光学性能的椭偏光谱测量

结合XRD和原子力显微镜等方法,利用椭圆偏振光谱仪测试了单层SiO2薄膜（K9基片）和单层HfO2薄膜（K9基片）的椭偏参数,并用Sellmeier模型和Cauchy模型对两种薄膜进行拟合,获得了SiO2薄膜和HfO2薄膜在300-800nm波段内的色散关系。用X射线衍射仪确定薄膜结构,并用原子力显微镜观察薄膜的微观形貌,分析表明：SiO2薄膜晶相结构呈现无定型结构,HfO2薄膜的晶相结构呈现单斜相结构;薄膜光学常数的大小和薄膜的表面形貌有关;Sellmeier和Cauchy模型较好地描述了该波段内薄膜的光学性能,并得到薄膜的折射率和消光系数等光学常数随波长的变化规律。     

Optoelectronic and conductivity of ᴫ‐conjugated polymers based on phenylenevinylene, 1,3,4‐thiadiazole and thiophene: Suitable candidates for n‐type organic semiconductors

New poly‐phenylenevinylenes PPVs containing 1,3,4‐thiadiazole as candidates for organic semiconductors have been theoretically studied at density functional theory (DFT) and time‐dependent DFT levels. This study has been conducted in order to investigate the geometrical and electronic properties as well as the conductivity of a series of PPV–thiophene–1,3,4–thiadiazole–thiophene (H–PhTAT–H) containing –CHO, –CH₂–P(=O)(OCH₃)₂, and phenyl–CHO (PhCHO) terminal groups. The impact of terminal groups on the optical bandgaps, electron affinity, LUMO energy, and intramolecular reorganization energy was studied for different oligomers and for a limit polymer. The incorporation of terminal groups did not affect the chain length evolution and the vertical transition energy E_vert value for a polymer limit compared with the unsubstituted oligomer (H–PhTAT–H). All studied properties showed that CHO–PhTAT–PhCHO and H–PhTAT–H oligomers can be considered as n‐type semiconductors.     

基于主动差分吸收光谱系统获取大气颗粒物光学特性研究

以主动差分吸收光谱遥感技术为基础,在干净大气环境条件下,结合参考光路设计技术,开展了获取近地面气溶胶颗粒物的光谱新方法研究.针对以宽带氙弧灯为光源的主动差分吸收光谱系统固有宽波段特性,建立了解析颗粒物光学厚度模型,获取了大气颗粒物光学特性.最后通过外场实验,获得测量期间气溶胶颗粒物光学厚度,然后采用对数线性回归获取Angstrom波长指数和混浊系数,以及大气能见度数据.主动差分吸收光谱系统用测量光程范围内的大气总的吸收特性,获得监测区域的颗粒物平均水平,更具有代表性和进一步应用价值.     

基于数学形态谱和二维矢量分类网络的模式识别及二维矢量分类网络的光学实现

介绍一种基于数学形态谱和二维矢量分类网络的模式识别体系。数学形态谱相对于图像平移和旋转不变。建立了光学二维矢量分类网络，利用光学逻辑操作和最大值网络的循环操作，得到与输入图像最佳匹配的模式。     

Theoretical Design of a Pump‐Free Ultrahigh Efficiency All‐Optical Switching Based on a Defect Ring Optical Waveguide Network

A theoretical design of a defect ring optical waveguide network is proposed to construct a pump‐free ultrahigh efficiency all‐optical switch. This switch creates ultrastrong photonic localization and causes the nonlinear dielectric in the defect waveguide to intensely respond. At its ON state, this material defect without Kerr response helps to produce a pair of sharp pass bands in the transmission spectrum to form the dual channel of the all‐optical switch. When it is switched to its OFF state, the strong Kerr response induced refractive index change in the high nonlinear defect waveguide strongly alters the spectrum, leading to a collapse of the dual channels. Network equation and generalized eigenfunction method are used to numerically calculate the optical properties of the switch and obtain a threshold control energy of about 2.90 zJ, which is eight orders of magnitude lower than previously reported. The switching efficiency/transmission ratio exceeds 3× 10¹¹, which is six orders of magnitude larger than previously reported. The state transition time is nearly 108 fs, which is approximately two orders of magnitude faster than the previously reported shortest time. Furthermore, the switch size can be much smaller than 2.6 µm and will be suitable for integration.     

氮化铝薄膜的光学性能

分别使用X衍射仪和紫外（190 nm～800 nm）分光光度仪,测量了用分子束外延法生长在SiC（001）基底面上的AIN薄膜的X衍射、透射谱和不同温度下的吸收谱.X衍射表明:实验所用的AIN薄膜在c-轴存在应变和应力,该应变和应力主要是由于AIN的晶格常量与基底SiC的晶格常量不匹配所致.透射谱表明:AIN薄膜的禁带宽度大约为6.2eV;而其对应的吸收谱在6.2eV处存在一个明显的台阶,此台阶被认为是AIN薄膜中的带边自由激子吸收所产生,忽略激子的结合能(与禁带宽度相比),则该值就对应为AIN的禁带宽度.而其对应的不同温度下（10 k～293 k）的吸收谱的谱线的形状和位置无明显的变化表明:温度对AIN薄膜的禁带宽度亦无明显的影响,这主要是由于在AIN薄膜中存在着应力所致.     

Influence of Radiative Irradiation on the Optical and Electrical Properties of Crystalline Quartz

The influence of radiation on the optical properties of quartz crystals has been investigated. Using the methods of IR and Raman spectroscopy, the lattice dynamics associated with a change in the spectral characteristics of a number of the stretching and deformation vibrations of the crystal lattice upon irradiation of samples by gamma quanta and neutrons to high doses has been determined. The regularities of radiative modification of the spectral characteristics of certain fully symmetrical and degenerate modes of the stretching vibrations of hydroxide groups are determined. To elucidate the reasons for the changes in the optical spectra, the latter were compared with the corresponding spectra obtained upon heating of wafers and with the change in the conductivity of crystals caused by irradiation. It is assumed that the changes in the optical spectra and conductivity of irradiated crystals are mainly due to the rearrangement of the quartz structure and to the stimulated migration of impurities. A possible mechanism of the process of conduction in the material is discussed in the framework of the existing models.__________Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 2, pp. 224–229, March–April, 2005.