Repair of defects created by Ar+ sputtering on graphite surface by annealing as confirmed using ToF‐SIMS and XPS

Defects were created on the surface of highly oriented pyrolytic graphite (HOPG) by sputtering with an Ar⁺ ion beam, then characterized using X‐ray photoelectron spectroscopy (XPS) and time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) at 500°C. In the XPS C1s spectrum of the sputtered HOPG, a sp³ carbon peak appeared at 285.3 eV, representing surface defects. In addition, 2 sets of peaks, the C_x⁻ and C_xH⁻ ion series (where x = 1, 2, 3...), were identified in the ToF‐SIMS negative ion spectrum. In the positive ion spectrum, a series of C_xH₂^+• ions indicating defects was observed. Annealing of the sputtered samples under Ar was conducted at different temperatures. The XPS and ToF‐SIMS spectra of the sputtered HOPG after 800°C annealing were observed to be similar to the spectra of the fresh HOPG. The sp³ carbon peak had disappeared from the C1s spectrum, and the normalized intensities of the C_xH⁻ and C_xH₂^+• ions had decreased. These results indicate that defects created by sputtering on the surface of HOPG can be repaired by high‐temperature annealing.     

Evaluation of the sputtering rate variation in SIMS ultra‐shallow depth profiling using multiple short‐period delta layers

We have developed multiple short‐period delta layers as a reference material for SIMS ultra‐shallow depth profiling. Boron nitride delta layers and silicon spacer layers were sputter‐deposited alternately, with a silicon spacer thickness of 1–5 nm. These delta‐doped layers were used to measure the sputtering rate change in the initial stage of oxygen ion bombardment. A significant variation of sputtering rate was observed in the initial 3 nm or less. The sputtering rate in the initial 3 nm was estimated to be about four times larger than the steady‐state value for 1000 eV oxygen ions. Copyright © 2003 John Wiley & Sons, Ltd.     

An investigation of hydrogen depth profiling using ToF‐SIMS

Hydrogen depth distributions in silicon, zinc oxide, and glass are of great interest in material research and industry. Time‐of‐flight SIMS has been used for hydrogen depth profiling for many years. However, some critical information, such as optimal instrumental settings and detection limits, is not easily available from previous publications. In this work, optimal instrumental settings and detection limits of hydrogen in silicon, zinc oxide, and common glass were investigated. The recommended experimental settings for hydrogen depth profiling using time‐of‐flight SIMS are: (i) keeping pressure in the analysis chamber as low as possible, (ii) using a cesium beam for sputtering and monitoring the H^– signal, (iii) employing monatomic ion analysis beams with the highest currents, and (iv) using interlace mode. In addition, monatomic secondary ions from a matrix are recommended as references to normalize the H^– signal. Detection limits of hydrogen are limited by the pressure of residual gases in the analysis chamber. The base pressure of the analysis chamber (with samples) is about 7 × 10^?10 mbar in this study, and the corresponding detection limits of hydrogen in silicon, zinc oxide, and common glass are 1.3 × 10¹⁸ atoms/cm³, 1.8 × 10¹⁸ atoms/cm³, and 5.6 × 10¹⁸ atoms/cm³, respectively. Copyright © 2011 John Wiley & Sons, Ltd.     

Ga‐focused ion beam time‐of‐flight secondary ion mass spectrometer analysis of the grain boundary segregation/precipitation of boron in steel

Ga‐focused ion beam time‐of‐flight secondary ion mass spectrometry (FIB‐TOF‐SIMS) analysis was performed to investigate the grain boundary segregation/precipitation of boron in steel. To overcome the low secondary ion yield from the primary Ga⁺ source and the sensitivity using a high‐resolution Ga‐FIB source, a low energy oxygen ion beam was used prior to the Ga‐FIB‐TOF‐SIMS analysis. As a result, it was found that Ga‐FIB‐TOF‐SIMS is a very powerful tool for mapping boron segregation and/or precipitation in steel with a spatial resolution of ~200 nm. In addition, the results were strongly dependent on the surface composition. Copyright © 2014 John Wiley & Sons, Ltd.     

Surface analysis of nitride layers formed on Fe‐based alloys through plasma nitride process

Nitriding phenomena that occur on the surfaces of pure Fe and Fe? Cr alloy (16 wt% Cr) samples were investigated. An Ar + N₂ mixture‐gas glow‐discharge plasma was used so that surface nitriding could occur on a clean surface etched by Ar⁺ ion sputtering. In addition, the metal substrates were kept at a low temperature to suppress the diffusion of nitrogen. These plasma‐nitriding conditions enabled us to characterize the surface reaction between nitrogen radicals and the metal substrates. The emission characteristics of the band heads of the nitrogen molecule ion (N₂⁺) and nitrogen molecule from the glow‐discharge plasma suggest that the active nitrogen molecule is probably the major nitriding reactant. AES and angle‐resolved XPS were used to characterize the thickness of the nitride layer and the concentration of elements and chemical species in the nitride layer. The thickness of the nitride layer did not depend on the metal substrate type. An oxide layer with a thickness of a few nanometers was formed on the top of the nitride layer during the nitriding process. The oxide layer consisted of several species of N_x‐Fe_y‐O, NO⁺, and NO₂^?. In the Fe? Cr alloy sample, these oxide species could be reduced because chromium is preferentially nitrided. Copyright © 2009 John Wiley & Sons, Ltd.     

Reduction of matrix effects in TOF‐SIMS analysis by metal‐assisted SIMS (MetA‐SIMS)

We investigated reduction of the matrix effect in time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) analysis by the deposition of a small amount of metal on the sample surfaces (metal‐assisted SIMS or MetA‐SIMS). The metal used was silver, and the substrates used were silicon wafers as electroconductive substrates and polypropylene (PP) plates as nonelectroconductive substrates. Irganox 1010 and silicone oil on these substrates were analyzed by TOF‐SIMS before and after silver deposition. Before silver deposition, the secondary ion yields from the substances on the silicon wafer and PP plate were quite different due to the matrix effect from each substrate. After silver deposition, however, both ion yields were enhanced, particularly the sample on the PP plate, and little difference was seen between the two substrates. It was therefore found that the deposition of a small amount of metal on the sample surface is useful for reduction of the matrix effect. By reducing the matrix effect using this technique, it is possible to evaluate from the ion intensities the order of magnitude of the quantities of organic materials on different substrates. In addition, this reduction technique has clear utility for the imaging of organic materials on nonuniform substrates such as metals and polymers. MetA‐SIMS is thus a useful analysis tool for solving problems with real‐world samples. Copyright © 2005 John Wiley & Sons, Ltd.     

Static SIMS analysis of carbonate on basic alkali‐bearing surfaces

Carbonate is a somewhat enigmatic anion in static secondary ion mass spectrometry (SIMS) because abundant ions containing intact CO₃^2? are not detected when analyzing alkaline‐earth carbonate minerals common to the geochemical environment. In contrast, carbonate can be observed as an adduct ion when it is bound with alkali cations. In this study, carbonate was detected as the adduct Na₂CO₃·Na⁺ in the spectra of sodium carbonate, bicarbonate, hydroxide, oxalate, formate and nitrite and to a lesser extent nitrate. The appearance of the adduct Na₂CO₃·Na⁺ on hydroxide, oxalate, formate and nitrite surfaces was interpreted in terms of these basic surfaces fixing CO₂ from the ambient atmosphere. The low abundance of Na₂CO₃·Na⁺ in the static SIMS spectrum of sodium nitrate, compared with a significantly higher abundance in salts having stronger conjugate bases, suggested that the basicity of the conjugate anions correlated with aggressive CO₂ fixation; however, the appearance of Na₂CO₃·Na⁺ could not be explained simply in terms of solution basicity constants. The oxide molecular ion Na₂O⁺ and adducts NaOH·Na⁺ and Na₂O·Na⁺ also constituted part of the carbonate spectral signature, and were observed in spectra from all the salts studied. In addition to the carbonate and oxide ions, a low‐abundance oxalate ion series was observed that had the general formula Na_2?xH_xC₂O₄·Na⁺, where 0 < x < 2. Oxalate adsorption from the laboratory atmosphere was demonstrated but the oxalate ion series also was likely to be formed from reductive coupling occurring during the static SIMS bombardment event. The remarkable spectral similarity observed when comparing the sodium salts indicated that their surfaces shared common chemical speciation and that the chemistry of the surfaces was very different from the bulk of the particle. Copyright © 2003 John Wiley & Sons, Ltd.     

TOF‐SIMS characterization of an aluminovanadate oxide catalyst

Time‐of‐flight Secondary Ion Mass Spectrometry (TOF‐SIMS) has been employed to characterize the surface physical and chemical state of aluminovanadate oxide catalyst precursors (‘V? Al? O’) precipitated at different pH values in the range of 5.5…10. The reference oxide V₂O₅ has also been studied for comparison purposes. It is shown that the analysis of molecular ion emission yields valuable information on the surface elemental and phase composition. Increasing pH values while precipitating from aqueous precursor solutions are found to result in a monotonic variation of the surface composition, in a progressive hydroxylation of aluminium and vanadium and in an increasing dispersion of vanadium oxide species. SIMS data evaluated on the basis of Plog's valence model of molecular ion emission reveal reduced V⁴⁺ states, the fraction of which is dependent on the pH value. The SIMS results are supported by XPS data. The enhancement of the catalytic activity in oxidative propane dehydrogenation over V? Al? O prepared at high precipitation pH is in good correlation with the measured surface characteristics. Copyright © 2007 John Wiley & Sons, Ltd.     

Investigation of block depth distribution in PS‐b‐PMMA block copolymer using ultra‐low‐energy cesium sputtering in ToF‐SIMS

Directed self‐assembly of block copolymers (BCPs) is a promising candidate for next generation nanolithography. In order to validate a given pattern, the lateral and in‐depth distributions of the blocks should be well characterized; for the latter, time‐of‐flight (ToF) SIMS is a particularly well‐adapted technique. Here, we use an ION‐TOF ToF‐SIMS V in negative mode to provide qualitative information on the in‐depth organization of polystyrene‐b‐polymethylmethacrylate (PS‐b‐PMMA) BCP thin films. Using low‐energy Cs⁺ sputtering and Bi₃⁺ as the analysis ions, PS and PMMA homopolymer films are first analyzed in order to identify the characteristic secondary ions for each block. PS‐b‐PMMA BCPs are then characterized showing that self‐assembled nanodomains are clearly observed after annealing. We also demonstrate that the ToF‐SIMS technique is able to distinguish between the different morphologies of BCP investigated in this work (lamellae, spheres or cylinders). ToF‐SIMS characterization on BCP is in good agreement with XPS analysis performed on the same samples. Copyright © 2013 John Wiley & Sons, Ltd.     

Tailoring the surface chemistry of carbon fiber and E‐glass composites for improved adhesion

The main challenges in the manufacture of composite materials are low surface energy and the presence of silicon‐containing contaminants, both of which greatly reduce surface adhesive strength. In this study, carbon fiber (CF) and E‐glass epoxy resin composites were surface treated with the Accelerated Thermo‐molecular adhesion Process (ATmaP). ATmaP is a multiaction surface treatment process where tailored nitrogen and oxygen functionalities are generated on the surface of the sample through the vaporization and atomization of n‐methylpyrrolidone solution, injected via specially designed flame‐treatment equipment. The treated surfaces of the polymer composites were analyzed using XPS, time of flight secondary ion mass spectrometry (ToF‐SIMS), contact angle (CA) analysis and direct adhesion measurements. ATmaP treatment increased the surface concentration of polar functional groups while reducing surface contamination, resulting in increased adhesion strength. XPS and ToF‐SIMS showed a significant decrease in silicon‐containing species on the surface after ATmaP treatment. E‐glass composite showed higher adhesion strength than CF composite, correlating with higher surface energy, higher concentrations of nitrogen and C?O functional groups (from XPS) and higher concentrations of oxygen and nitrogen‐containing functional groups (particularly C₂H₃O⁺ and C₂H₅NO⁺ molecular ions, from ToF‐SIMS). Copyright © 2010 John Wiley & Sons, Ltd.     

Degradation of poly(acrylates) under SF5+ primary ion bombardment studied using time‐of‐flight secondary ion mass spectrometry. 2. Poly(n‐alkyl methacrylates)

Polyatomic primary ions offer low penetration depth and high damage removal rates in some polymers, facilitating their use in the molecular depth profiling of these polymers by secondary ion mass spectrometry (SIMS). This study is the second in a series of systematic characterizations of the effect of polymer chemistry on degradation under polyatomic primary ion bombardment. In this study, time‐of‐flight SIMS (ToF‐SIMS) was used to measure the damage of ～90 nm thick spin‐cast poly(methyl methacrylate), poly(n‐butyl methacrylate), poly(n‐octyl methacrylate) and poly(n‐dodecyl methacrylate) films under extended (～2 × 10¹⁴ ions cm^?2) 5 keV SF₅⁺ bombardment. The degradation of the poly(n‐alkyl methacrylates) were compared to determine the effect of the length of the alkyl pendant group on their degradation under SF₅⁺ bombardment. The sputter rate and stability of the characteristic secondary ion intensities of these polymers decreased linearly with alkyl pendant group length, suggesting that lengthening the n‐alkyl pendant group resulted in increased loss of the alkyl pendant groups and intra‐ or intermolecular cross‐linking under SF₅⁺ bombardment. These results are partially at variance with the literature on the thermal degradation of these polymers, which suggested that these polymers degrade primarily via depolymerization with minimal intra‐ or intermolecular cross‐linking. Copyright © 2004 John Wiley & Sons, Ltd.     

Time‐of‐flight SIMS characterization of hydrolysed organofunctional and non‐organofunctional silanes deposited on Al,Zn and Al–43.4Zn–1.6Si alloy‐coated steel

In this paper Al, Zn and Al–43.4Zn–1.6Si (AlZn) alloy‐coated steel have been treated with the organofunctional silane γ‐mercaptopropyltrimethoxysilane (γ‐MPS) and the non‐organofunctional silane 1,2‐bis(triethoxysilyl)ethane (BTSE). Also, a two‐step treatment of metal substrates was performed: the metal substrates were treated with the BTSE silane followed by a γ‐MPS treatment. The influence of metal substrate and the pH value of the silane film properties were investigated using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS). The results show that the BTSE silane is fully hydrolysed but the γ‐MPS silane is not. The presence of negative ions of the type HSi_xO_y^? indicates that both types of silane films are highly cross‐linked via Si–O–Si bonds. The two‐step treatment gave a γ‐MPS silane layer on top of the BTSE silane layer but the thickness of the total silane film become thinner than for a single BTSE film, indicating that some of the BTSE is dissolved during the γ‐MPS deposition step. Furthermore, the ToF‐SIMS results show that the thiol group of the γ‐MPS silane is oxidized. Finally, no major influence, either in the positive or the negative mass spectra, from the different metal substrates could be detected for the silane films investigated. Copyright © 2003 John Wiley & Sons, Ltd.     

Enhancement of the positive secondary ion yield during low‐energy,dual‐beam depth profiling of polytetrafluoroethylene with 1‐keV Cs+

This work documents the behaviour of the positive secondary ion yield of bulk polytetrafluoroethylene (PTFE) under dual‐beam depth profiling conditions employing 1 keV Ar⁺, Cs⁺ and SF₅⁺. A unique chemical interaction is observed in the form of a dramatic enhancement of the positive secondary ion yield when PTFE is dual‐beam profiled with 1 keV Cs⁺. The distinct absence of such an enhancement is noted for comparison on two non‐fluorinated polymers, polyethylene terephthalate (PET) and polydimethylsiloxane (PDMS). The bulk PTFE was probed using 15‐keV, ⁶⁹Ga⁺ primary ions in dual beam mode under static conditions; 1‐keV Ar⁺ (a non‐reactive, light, noble element), Cs⁺ (a heavier metallic ion known to form clusters) and SF₅⁺ (a polyatomic species) served as the sputter ion species. The total accumulated primary ion dose was of the order of 10¹⁵ ions/cm², which is well beyond the static limit. The enhancement of the positive secondary yield obtained when profiling with 1‐keV Cs⁺ far exceeds that obtained when SF₅⁺ is employed. An explanation of this apparent reactive ion effect in PTFE is offered in terms of polarisation of C? F bonds by Cs⁺ in the vicinity of the implantation site thereby predisposing them to facile scission. The formation of peculiar, periodic Cs_xF_y⁺ (where y = x ? 1) and Cs_xC_yF_z⁺ clusters that can extend to masses approaching 2000 amu are also observed. Such species may serve as useful fingerprints for fluorocarbons that can be initiated via pre‐dosing a sample with low‐energy Cs⁺ prior to static 15‐keV Ga⁺ analysis. Copyright © 2005 John Wiley & Sons, Ltd.     

Ultrashallow depth profiling using SIMS and ion scattering spectroscopy

The accuracy of ultrashallow depth profiling was studied by secondary ion mass spectrometry (SIMS) and high‐resolution Rutherford backscattering spectroscopy (HRBS) to obtain reliable depth profiles of ultrathin gate dielectrics and ultrashallow dopant profiles, and to provide important information for the modeling and process control of advanced complimentary metal‐oxide semiconductor (CMOS) design. An ultrathin Si₃N₄/SiO₂ stacked layer (2.5 nm) and ultrashallow arsenic implantation distributions (3 keV, 1 × 10¹⁵ cm^?2) were used to explore the accuracy of near‐surface depth profiles measured by low‐energy O₂⁺ and Cs⁺ bombardment (0.25 and 0.5 keV) at oblique incidence. The SIMS depth profiles were compared with those by HRBS. Comparison between HRBS and SIMS nitrogen profiles in the stacked layer suggested that SIMS depth profiling with O₂⁺ at low energy (0.25 keV) and an impact angle of 78° provides accurate profiles. For the As⁺‐implanted Si, the HRBS depth profiles clearly showed redistribution in the near‐surface region. In contrast, those by the conventional SIMS measurement using Cs⁺ primary ions at oblique incidence were distorted at depths less than 5 nm. The distortion resulted from a long transient caused by the native oxide. To reduce the transient behavior and to obtain more accurate depth profiles in the near‐surface region, the use of O₂⁺ primary ions was found to be effective, and 0.25 keV O₂⁺ at normal incidence provided a more reliable result than Cs⁺ in the near‐surface region. Copyright © 2007 John Wiley & Sons, Ltd.     

Controlled sub‐10‐nanometer poly(N‐isopropyl‐acrylamide) layers grafted from silicon by atom transfer radical polymerization

Surface‐initiated atom transfer radical polymerization (SI‐ATRP) was used to graft poly(N‐isopropylacrylamide) (PNIPAM) brush layers with a controllable thickness in the 10‐nm range from silicon substrates. The rate of polymerization of N‐isopropylacrylamide was tuned by the [Cu(II)]₀/[Cu(I)]₀ ratio between the deactivating and activating species. The polymer layer thickness was characterized by atomic force microscopy (AFM) and ellipsometry. PNIPAM layers with a dry thickness between 5.5 and 16 nm were obtained. Time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) confirmed that the chemical structure is PNIPAM brushes. Analysis of the AFM data showed that our procedure leads to polymer grafts in the “mushroom‐to‐brush” transition regime.     

A novel approach for measuring ultra‐thin,buried SiO2 film thickness

Accurate measurement of physical thickness of thin SiO₂ films is of great interest to the semiconductor industry. Existing inspection techniques are subject to large error when the oxide thickness falls below 2 nm. This work explored a new approach with improved accuracy to the measurement of thickness of thin oxide films. The new method utilizes dynamic SIMS with a primary ion beam of one isotope of oxygen (¹⁶O or ¹⁸O) at normal incidence and detecting negative secondary ions of another isotope (¹⁸O or ¹⁶O, respectively) inside SiO₂. The experiment was performed by using an ¹⁶O₂⁺ primary beam and detecting ¹⁸O^? as characteristic secondary ions for SiO₂. We substantiated that the matrix effect was eliminated during profiling through the SiO₂/Si interface in a poly Si/SiO₂/Si stack with an O₂⁺ beam at normal incidence, which is crucial for reliable quantification of oxygen amount inside SiO₂. The high ion yield of ¹⁸O^? and negligible contribution from the mass interference of¹⁶ OH₂^? ensured measurement of the total amount of oxygen inside an SiO₂ film with good sensitivity. By assuming that the silicon oxide is in the form of stoichiometric SiO₂, which is the case for those layers grown with dry oxidation, the measured amount of oxygen can be readily converted into the thickness of SiO₂. This technique provides reproducible measurement of the thickness of SiO₂ films and potentially a good accuracy if a reference material is well calibrated. Copyright © 2009 John Wiley & Sons, Ltd.     

Development of B‐doped Si multiple delta‐layer reference materials for SIMS profiling

B‐doped Si multiple delta‐layers (MDL) were developed as certified reference materials (CRM) for secondary ion mass spectrometry (SIMS) depth profiling analysis. Two CRMs with different delta‐layer spacing were grown by ion beam sputter deposition (IBSD). The nominal spacing of the MDL for shallow junction analysis is 10 nm and that for high energy SIMS is 50 nm. The total thickness of the film was certified by high resolution transmission electron microscopy (HR‐TEM). The B‐doped Si MDLs can be used to evaluate SIMS depth resolution and to calibrate the depth scale. A consistency check of the calibration of stylus profilometers for measurement of sputter depth is another possible application. The crater depths measured by a stylus profilometer showed a good linear relationship with the thickness measured from SIMS profiling using the calibrated film thickness for depth scale calibration. The sputtering rate of the amorphous Si thin film grown by sputter deposition was found to be the same as that of the crystalline Si substrate, which means that the sputtering rate measured with these CRMs can be applied to a real analysis of crystalline Si. Copyright © 2005 John Wiley & Sons, Ltd.     

Study of the end‐group contribution to ToF‐SIMS and G‐SIMS spectra of poly (lactic acid) using deuterium labelling

In this study, polymeric (MW 50 000) and oligomeric (MW 2000) poly (lactic acid) (PLA), both with and without end‐group deuterium exchange, were analysed using static secondary ion mass spectrometry (SSIMS) to investigate the contribution of end‐group‐derived secondary ions to the SSIMS spectra. By monitoring the SSIMS intensities between the non‐deuterated and deuterated PLA, it is evident that the only significant end‐group‐derived secondary ions are [nM + H]⁺ (n > 1) and C₄H₉O₂⁺. The gentle‐SIMS (G‐SIMS) methodology was employed to establish that deuterated fragments were produced through low energy processes and were not the result of substantial rearrangements. It was noted that end‐group‐derived secondary ions had higher G‐SIMS intensities for oligomeric PLA than polymeric PLA, showing that these secondary ions are simple fragment products that are not the result of rearrangement or degraded product ions. Copyright © 2007 John Wiley & Sons, Ltd.     

Quantitative analysis of styrene‐pentafluorostyrene random copolymers by ToF‐SIMS and XPS

Poly(styrene) (PS), poly(2,3,4,5,6‐pentafluorostyrene) (5FPS) and their random copolymers were prepared by bulk radical polymerization. The spin‐cast polymer films of these polymers were analyzed using X‐ray photoelectron spectroscopy (XPS) and time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS). The surface and bulk compositions of these copolymers were found to be same, implying that surface segregation did not occur. The detailed analysis of ToF‐SIMS spectra indicated that the ion fragmentation mechanism is similar for both PS and 5FPS. ToF‐SIMS quantitative analysis using absolute peak intensity showed that the SIMS intensities of positive styrene fragments, particularly C₇H₇⁺, in the copolymers are higher than the intensities expected from a linear combination of PS and 5FPS, while the SIMS intensities of positive pentafluorostyrene fragments are smaller than expected. These results indicated the presence of matrix effects in ion formation process. However, the quantitative approach using relative peak intensity showed that ion intensity ratios are linearly proportional to the copolymer mole ratio when the characteristic ions of PS and 5FPS are selected. This suggests that quantitative analysis is still possible in this copolymer system. Copyright © 2005 John Wiley & Sons, Ltd.     

SIMS depth profiling of semiconductor interfaces: Experimental study of depth resolution function

Reconstruction of original element distribution at semiconductor interfaces using experimental SIMS profiles encounters considerable difficulties because of the matrix effect, sputtering rate change at the interface, and also a sputtering‐induced broadening of original distributions. We performed a detailed depth profiling analysis of the Al step‐function distribution in GaAs/Al_xGa_1?xAs heterostructures by using Cs⁺ primary ion beam sputtering and CsM⁺ cluster ion monitoring (where M is the element of interest) to suppress the matrix effect. The experimental Depth Resolution Function (DRF) was obtained by differentiation of the Al step‐function profile and compared with the ‘reference’ DRF found from depth profiling of an Al delta layer. The difference between two experimental DRFs was explained by the sputtering rate change during the interface profiling. We experimentally studied the sputtering rate dependence on the Al_xGa_1?xAs layer composition and applied it for a reconstruction of the DRF found by differentiating the Al step‐function distribution: the ‘reconstructed’ and ‘reference’ DRFs were found to be in good agreement. This confirmed the correctness of the treatment elaborated. Copyright © 2010 John Wiley & Sons, Ltd.