Substrate temperature influenced ZrO2 films for MOS devices

The effect of substrate temperature on the direct current magnetron-sputtered zirconium oxide (ZrO₂) dielectric films was investigated. Stoichiometric of the ZrO₂ thin films was obtained at an oxygen partial pressure of 4.0 × 10⁻² Pa. X-ray diffraction studies revealed that the crystallite size in the layer was increased from 4.8 to 16.1 nm with increase of substrate temperature from 303 to 673 K. Metal-oxide-semiconductor devices were fabricated on ZrO₂/Si stacks with Al gate electrode. The dielectric properties of ZrO₂ layer and interface quality at ZrO₂/Si were significantly influenced by the substrate temperature. The dielectric constant increased from 15 to 25, and the leakage current density decreased from 0.12 × 10⁻⁷ to 0.64 × 10⁻⁹ A cm⁻² with the increase of substrate temperature from 303 to 673 K.     

Interpreting the conductive atomic force microscopy measured inhomogeneous nanoscale surface electrical properties of Al‐doped ZnO films

In this work, conductive atomic force microscopy is used to study the inhomogeneous surface electrical conductivity of Al‐doped ZnO thin films at a nanoscale dimension. To this end, Al‐doped ZnO films were deposited onto the soda lime glass substrates at substrate temperature (T_s) varying from 303 to 673 K in radio frequency magnetron sputtering. The obtained local surface electrical conductivity values are found to be influenced by their bulk electrical resistivity, surface topography and tip geometry. Further, the average (local) surface conductivity from the film surface is found to increase with increasing T_s from 303 to 623 K, beyond which they decrease until 673 K. Copyright © 2016 John Wiley & Sons, Ltd.     

Single‐phase TiO2 formation by plasma oxidation of titanium thin films

Synthesis of titanium oxide film by plasma oxidization of the metallic films is investigated. Argon/oxygen gas mixture in the pressure range 30 × 10^?2 mbar is used for plasma processing at a frequency of 250 kHz. The plasma‐oxidized films are annealed in a tube furnace in argon atmosphere to establish crystalline‐phase formation. X‐ray diffraction and Raman spectroscopic results manifest peaks corresponding to rutile TiO₂. Ultraviolet‐Visible (UV‐Vis) spectroscopic analysis confirms the bandgap of rutile TiO₂, and photoluminescence spectra exhibit peaks due to oxygen defects. Homogeneity across the film's thickness and the nature of the film substrate interface is studied by depth profiling acquired using secondary ion mass spectrometry. Copyright © 2015 John Wiley & Sons, Ltd.     

Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Titanium dioxide (TiO₂) thin films were deposited onto p‐Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80–200 W. The as‐deposited TiO₂ films were annealed at a temperature of 1023 K. The post‐annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO₂/p‐Si structure were determined from the capacitance–voltage and current–voltage characteristics. X‐ray diffraction studies confirmed that the as‐deposited films were amorphous in nature. After post‐annealing at 1023 K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers > 160 W showed the mixed anatase and rutile phases of TiO₂. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air‐annealed Al/TiO₂/p‐Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO₂/p‐Si (metal‐insulator‐semiconductor) was systematically investigated. Copyright © 2014 John Wiley & Sons, Ltd.     

Dye degradation studies of Mo‐doped TiO2 thin films developed by reactive sputtering

TiO₂ thin films with various Mo concentrations have been deposited on glass and n‐type silicon (100) substrates by this radio‐frequency (RF) reactive magnetron sputtering at 400°C substrate temperature. The crystal structure, surface morphology, composition, and elemental oxidation states of the films have been analyzed by using X‐ray diffraction, field emission scanning electron microscopy, atomic force microscopy, and X‐ray photoelectron spectroscopy, respectively. Ultraviolet‐visible spectroscopy has been used to investigate the degradation, transmittance, and absorption properties of doped and undoped TiO₂ films. The photocatalytic degradation activity of the films was evaluated by using methylene blue under a light intensity of 100 mW cm⁻². The X‐ray diffraction patterns show the presence of anatase phase of TiO₂ in the developed films. X‐ray photoelectron spectroscopy studies have confirmed that Mo is present only as Mo⁶⁺ ions in all films. The Mo/TiO₂ band gap decreases from ~3.3 to 3.1 eV with increasing Mo dopant concentrations. Dye degradation of ~60% is observed in Mo/TiO₂ samples, which is much higher than that of pure TiO₂.     

Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology

Structural and electrical properties of HfO₂ gate-dielectric metal-oxide-semiconductor (MOS) capacitors deposited by sputtering are investigated. The HfO₂ high-k thin films have been deposited on p-type <100> silicon wafer using RF-Magnetron sputtering technique. The Ellipsometric, FTIR and AFM characterizations have been done. The thickness of the as deposited film is measured to be 35.38 nm. Post deposition annealing in N₂ ambient is carried out at 350, 550, 750 °C. The chemical bonding and surface morphology of the film is verified using FTIR and AFM respectively. The structural characterization confirmed that the thin film was free of physical defects and root mean square surface roughness decreased as the annealing temperature increased. The smooth surface HfO₂ thin films were used for Al/HfO₂/p-Si MOS structures fabrication. The fabricated Al/HfO₂/p-Si structure had been used for extracting electrical properties such as dielectric constant, EOT, interface trap density and leakage current density through capacitance voltage and current voltage measurements. The interface state density extracted from the G–V measurement using Hill Coleman method. Sample annealed at 750 °C showed the lowest interface trap density (3.48 × 10¹¹ eV⁻¹ cm⁻²), effective oxide charge (1.33 × 10¹² cm⁻²) and low leakage current density (3.39 × 10⁻⁹ A cm⁻²) at 1.5 V.     

ZnO thin films prepared on titanium substrate by PLD technique at different substrate temperatures

ZnO thin films were grown by pulsed laser deposition on titanium substrates at different substrate temperatures ranging from 300 to 700 °C. X‐ray diffraction (XRD), X‐ray photoelectron spectroscopy (XPS),photoluminescence, and Raman spectroscopy are employed to investigate the change of properties. XRD, XPS, and Raman data showed that the films consisted of TiO₂ at high substrate temperature, which will deteriorate the crystallization quality of ZnO films. The optimum temperature for the growth of ZnO films on the Ti substrate is about 500 °C in this paper. The ZnO films grown on titanium substrate can be used in direct current, microwave, and medical applications. Copyright © 2014 John Wiley & Sons, Ltd.     

Photocatalytic properties of CuO/(001)‐TiO2 composites synthesized by the vapor–thermal method

Composites of (001)‐face‐exposed TiO₂ ((001)‐TiO₂) and CuO were synthesized in water vapor environment at 250°C with various Cu/Ti molar ratios (R_Cu/Ti). The resulting CuO/(001)‐TiO₂ composites were characterized using a variety of techniques. The synthesis under high‐temperature vapor allows close contact between CuO and (001)‐TiO₂, which results in the formation of heterojunctions, as evidenced by the shift of valence band maximum towards the forbidden band of TiO₂. An appropriate ratio of CuO can enhance the absorption of visible light and promote the separation of photogenerated carriers, which improve the photocatalytic performance. The degradation rate constant K_app increased from 5.5 × 10^?2 to 8.1 × 10^?2 min^?1 for R_Cu/Ti = 0.5. Additionally, the results showed that superoxide radicals (^?O₂^?) play a major role in the photocatalytic degradation of methylene blue.     

Electrochemical Fabrication and Properties of Highly Ordered Fe‐Doped TiO2 Nanotubes

Highly‐ordered Fe‐doped TiO₂ nanotubes (TiO₂nts) were fabricated by anodization of co‐sputtered Ti–Fe thin films in a glycerol electrolyte containing NH₄F. The as‐sputtered Ti–Fe thin films correspond to a solid solution of Ti and Fe according to X‐ray diffraction. The Fe‐doped TiO₂nts were studied in terms of composition, morphology and structure. The characterization included scanning electron microscopy, energy‐dispersive X‐ray spectroscopy, X‐ray diffraction, UV/Vis spectroscopy, X‐ray photoelectron spectroscopy and Mott–Schottky analysis. As a result of the Fe doping, an indirect bandgap of 3.0 eV was estimated using Tauc’s plot, and this substantial red‐shift extends its photoresponse to visible light. From the Mott–Schottky analysis, the flat‐band potential (E_fb) and the charge carrier concentration (N_D) were determined to be ?0.95 V vs Ag/AgCl and 5.0 ×10¹⁹ cm^?3 respectively for the Fe‐doped TiO₂nts, whilst for the undoped TiO₂nts, E_fb of ?0.85 V vs Ag/AgCl and N_D of 6.5×10¹⁹ cm^?3 were obtained.     

Incorporation of titanium dioxide particles into polymer matrix using block copolymer micelles for fabrication of high refractive and transparent organic–inorganic hybrid materials

We report a novel strategy for incorporation of titanium dioxide (TiO₂) particles into poly(methyl methacrylate) (PMMA) to exploit high refractive and transparent organic–inorganic hybrid materials. Formation of TiO₂ particles of around 20 nm was conducted within hydrophilic core of block copolymer micelles of poly(methyl methacrylate‐block‐acrylic acid) (PMMA‐b‐PAA) in toluene via sol–gel process from titanium isopropoxide and hydrochloric acid. Subsequently, incorporation of TiO₂ particles into PMMA matrix was carried out by casting toluene solution of TiO₂ precursor‐loaded copolymer micelles, prepared from PMMA₃₅₀‐b‐PAA₉₃ and the precursor of mole ratio Ti⁴⁺/carboxyl 4.0, and PMMA. Hybrid films of TiO₂/PMMA exhibited high transparency to achieve transmission over 87% at 500 nm at 30 wt % of TiO₂ content. The refractive index of resulting hybrid films at 633 nm linearly increased with TiO₂ content to attain 1.579 at 30 wt % TiO₂, which was 0.1 higher than that of PMMA. Cross‐sectional transmission electron microscope images of TiO₂/PMMA hybrid films showed existence of TiO₂ clusters less than 100 nm, which were probably formed by aggregation or agglutination of TiO₂ particles during a drying process. It was also observed that decomposition temperature of the hybrid films elevated with increasing TiO₂ content. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

Influence of sintering on the structural and electronic properties of TiO2 nanoporous layers prepared via a non-sol–gel approach

In this work, a nonaqueous method is used to fabricate thin TiO₂ layers. In contrast to the common aqueous sol–gel approach, our method yields layers of anatase nanocrystallites already at low temperature. Raman spectroscopy, electron microscopy and charge extraction by linearly increasing voltage are employed to study the effect of sintering temperature on the structural and electronic properties of the nanocrystalline TiO₂ layer. Raising the sintering temperature from 120 to 600?°C is found to alter the chemical composition, the layer’s porosity and its surface but not the crystal phase. The room temperature mobility increases from 2?×?10^?6 to 3?×?10^?5?cm²/Vs when the sinter temperature is increased from 400 to 600?°C, which is explained by a better interparticle connectivity. Solar cells comprising such nanoporous TiO₂ layers and a soluble derivative of cyclohexylamino-poly(p-phenylene vinylene) were fabricated and studied with regard to their structural and photovoltaic properties. We found only weak polymer infiltration into the oxide layer for sintering temperatures up to 550?°C, while the polymer penetrated deeply into titania layers that were sintered at 600?°C. Best photovoltaic performance was reached with a nanoporous TiO₂ film sintered at 550?°C, which yielded a power conversion efficiency of 0.5?%. Noticeably, samples with the TiO₂ layer dried at 120?°C displayed short-circuit currents and open circuit voltages only about 15–20?% lower than for the most efficient devices, meaning that our nonaqueous route yields titania layers with reasonable transport properties even at low sintering temperatures.     

Dielectric and mechanical properties of anodic films in the Ta–Ti system

Anodic oxidation at high efficiency of sputtering‐deposited Ta–Ti alloys containing 0.6–40 at.% Ti is shown to result in amorphous films comprising a relatively thin outer layer of TiO₂‐based material and an inner layer consisting of units of TiO₂ and Ta₂O₅. The two layers develop due to the faster migration of Ti⁴⁺ ions in the inner layer relative to that of Ta⁵⁺ ions. The formation ratios for the various films are in the approximate range 1.6–1.9 nm V^?1. The dielectric constants of the films are ～28, which is a similar value to that of anodic tantala. Nanoindentation revealed that the elastic modulus and hardness of the films are essentially independent of film composition, with average values of 134 and 5.3 GPa, respectively. Copyright © 2003 John Wiley & Sons, Ltd.     

Visible‐light‐driven self‐cleaning SERS substrate of silver nanoparticles and graphene oxide decorated nitrogen‐doped titania nanotube array

Graphene oxide (GO) and silver nanoparticles (Ag NPs) sequentially decorated nitrogen‐doped titania nanotube array (N‐TiO₂ NTA) had been designed as visible‐light‐driven self‐cleaning surface‐enhanced Raman scattering (SERS) substrate for a recyclable SERS detection application. N‐TiO₂ NTA was fabricated by anodic oxidation and then doping nitrogen treatment in ammonia atmosphere, acting as a visible‐light‐driven photocatalyst and supporting substrate. Ag/GO/N‐TiO₂ NTA was prepared by decorating GO monolayer through an impregnation process and then depositing Ag NPs through a polyol process on the surface of N‐TiO₂ NTA, acting as the collection of organic molecule and Raman enhancement. The SERS activity of Ag/GO/N‐TiO₂ NTA was evaluated using methyl blue as an organic probe molecule, revealing the analytical enhancement factor of 4.54 × 10⁴. Ag/GO/N‐TiO₂ NTA was applied as active SERS substrate to determine a low‐affinity organic pollutant of bisphenol A, revealing the detection limit of as low as 5 × 10^?7 m . Ag/GO/N‐TiO₂ NTA could also achieve self‐cleaning function for a recycling utilization through visible‐light‐driven photocatalytic degradation of the adsorbed organic molecules. Ag/GO/N‐TiO₂ NTA has been successfully reused for five times without an obvious decay in accuracy and sensitivity for organic molecule detection. The unique properties of this SERS substrate enable it to have a promising application for the sensitive and recyclable SERS detection of low‐affinity organic molecules. Copyright © 2016 John Wiley & Sons, Ltd.     

Effect of the sputtering parameters on the physical properties and photocatalytic reactivity of TiO2 thin films prepared by an RF magnetron sputtering deposition method

Visible light-responsive TiO₂ (Vis-TiO₂) thin films were successfully developed by applying a radio-frequency magnetron sputtering deposition method by controlling various sputtering parameters such as the substrate temperature, Ar gas pressure, and the target-to-substrate distance. UV–Vis, XRD and SEM investigations revealed that optical property, the crystal structure, and photocatalytic activity of Vis-TiO₂ are strongly affected by the sputtering parameters during the deposition step. Vis-TiO₂ was found to act as an efficient photocatalyst for the H₂ and O₂ evolution from water under visible light irradiation (λ ≥ 420 nm). SIMS investigations have revealed that a slight decrease in the O/Ti ratio of the TiO₂ thin films plays an important role in the modification of the electronic properties of Vis-TiO₂ thin films, enabling them to absorb visible light.     

Seeking Hidden Magnetic Phenomena by Theoretical Means in a Thiooxoverdazyl Adduct

The oxidation of 1,5‐dimethyl‐3‐(2′‐pyridyl)‐6‐thiooxotetrazane (SvdH₃py) by benzoquinone leads to a 1:1 adduct of 1,5‐dimethyl‐3‐(2′‐pyridyl)‐6‐thiooxoverdazyl radical (Svdpy) with hydroquinone (hq). The single‐crystal X‐ray diffraction of this adduct at room temperature (RT) shows that the radicals exhibit a slight curvature that leads to the formation of alternating head‐to‐tail (antiparallel) stacked 1D chains. Moreover, temperature‐dependent X‐ray measurements at 100, 200, and 303 K reveal that the lateral slippages between the radicals of the stacks |δ₁| and |δ₂| vary from 0.64 to 0.78 Å and 0.54 to 0.40 Å between 100 and 303 K. Despite the alternation of the inter‐radical distances and lateral slippages, the magnetic susceptibility data can be fitted with excellent agreement using a regular one‐dimensional antiferromagnetic chain model with J=?5.9 cm^?1. Wavefunction‐based calculations indicate an alternation of the magnetic interaction parameters correlated with the structural analysis at RT. Moreover, they demonstrate that the thermal slippage of the radicals induces a switching of the physical behavior, since the exchange interaction changes from antiferromagnetic (?0.9 cm^?1) at 100 K to ferromagnetic (1.4 cm^?1) at 303 K. The theoretical approach thus reveals a much richer magnetic behavior than the analysis of the magnetic susceptibility data and ultimately questions the relevance of a spin‐coupled picture based on temperature‐independent parameters.     

Preparation and characterization of thin TiO2-films on gold/mica

Flat and highly (111) oriented gold and silver films were prepared by physical vapour deposition (PVD) using optimized deposition parameters. On these films, which were characterized with atomic force microscopy (AFM), scanning tunneling microscopy (STM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), titanium dioxide films were deposited by electron beam evaporation and dip coating. Dip coating from titanium tetraisopropoxide solutions resulted in films with different morphology and coverage depending on the alkoxide concentration (0.009 mol/L – 0.60 mol/L) and the post-treatment. Scanning electron microscopy (SEM) and AFM revealed that the deposited TiO₂ consists of amorphous, highly porous islands when the applied alkoxide concentration is high (0.05 mol/L – 0.6 mol/L). At higher temperatures these amorphous TiO₂ islands sintered significantly and crystallized to anatase. In contrast, transparent TiO₂ films were obtained from low concentrated alkoxide solutions (< 0.01 mol/L) which covered the whole substrate, similar to electron beam evaporated thin films. Sputter profiles with ion scattering spectroscopy (ISS) indicated that the film thickness is in the range of 2 nm when alkoxide solutions with a concentration of 9 mmol/L are used. The deposition of TiO₂ by electron beam evaporation normally resulted in significantly reduced TiO₂ films, completely oxidized ones were obtained when deposition was performed at elevated oxygen partial pressures (p(O₂) > 2 × 10^–5 mbar).     

The kinetics of complex formation between Ti(IV) and hydrogen peroxide

The kinetics of the formation of the titanium‐peroxide [TiO²⁺₂] complex from the reaction of Ti(IV)OSO₄ with hydrogen peroxide and the hydrolysis of hydroxymethyl hydroperoxide (HMHP) were examined to determine whether Ti(IV)OSO₄ could be used to distinguish between hydrogen peroxide and HMHP in mixed solutions. Stopped‐flow analysis coupled to UV‐vis spectroscopy was used to examine the reaction kinetics at various temperatures. The molar absorptivity (ε) of the [TiO²⁺₂] complex was found to be 679.5 ± 20.8 L mol^?1 cm^?1 at 405 nm. The reaction between hydrogen peroxide and Ti(IV)OSO₄ was first order with respect to both Ti(IV)OSO₄ and H₂O₂ with a rate constant of 5.70 ± 0.18 × 10⁴ M^?1 s^?1 at 25°C, and an activation energy, E_a = 40.5 ± 1.9 kJ mol^?1. The rate constant for the hydrolysis of HMHP was 4.3 × 10^?3 s^?1 at pH 8.5. Since the rate of complex formation between Ti(IV)OSO₄ and hydrogen peroxide is much faster than the rate of hydrolysis of HMHP, the Ti(IV)OSO₄ reaction coupled to time‐dependent UV‐vis spectroscopic measurements can be used to distinguish between hydrogen peroxide and HMHP in solution. © 2007 Wiley Periodicals, Inc. Int J Chem Kinet 39: 457–461, 2007     

Enhanced Anodic Electrochemiluminescence of Dissolved Oxygen with 2‐(Dibutylamino) ethanol at TiO2 Nanoparticles Modified Platinum Electrode for Dopamine Detection

The anodic electrochemiluminescence (ECL) of dissolved oxygen with 2‐(dibutylamino) ethanol (DBAE) on platinum electrode has been reported previously by our group. Interestingly, the ECL intensity can be greatly amplified at TiO₂ nanoparticles modified platinum electrode (TiO₂/Pt), which is due to the catalytic effect of TiO₂ nanoparticles to electrochemical oxidation of DBAE. It is the first case to obtain the enhanced ECL from luminophor by electrochemical catalysis of co‐reactant. The enhanced anodic ECL intensity can be quenched by dopamine sensitively. And the ECL intensity versus the logarithm of concentration of dopamine was linear over the 4.0×10^?12–1.8×10^?8 M (R²=0.9957), with the limit of detection of 2.7×10^?12 M (S/N=3).     

Heterogeneous reaction of formaldehyde on the surface of TiO2 particles

The heterogeneous reaction of formaldehyde (HCHO) on the surface of titanium dioxide (TiO₂) was investigated in situ using diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) combined with ion chromatography (IC), X-ray diffraction (XRD), and transmission electron microscopy (TEM). Formate, dioxymethylene, methoxy, and polyoxymethylene were observed in the infrared spectra of TiO₂ particles during the reaction. On the surface of TiO₂, the adsorbed HCHO was first oxidized to dioxymethylene and further oxidized to formate. The effects of temperature and ultraviolet radiation (UV) on the reaction products and reactive uptake coefficients were studied, and the results indicate that the reaction rate can be accelerated at increasing temperatures as well as under UV. The heterogeneous reaction mechanisms of HCHO on the surface of TiO₂ in the dark and under UV irradiation are proposed. Kinetic measurements show that formate formation on TiO₂ is second order in HCHO concentration and the initial reactive uptake coefficients at room temperature calculated with the Brunauer-Emmett- Teller specific surface area are (0.5–5) × 10^?8 ([HCHO]: 1 × 10¹³?2 × 10¹⁴ molecules/cm³). A linear function relationship exists between the uptake coefficient and the concentration. The apparent activation energy of the reaction was also determined.     

Comparison of the Plasma Temperature and Electron Number Density of the Pulsed Electrolyte Cathode Atmospheric Pressure Discharge and the Direct Current Solution Cathode Glow Discharge

A novel-pulsed electrolyte cathode atmospheric pressure discharge (pulsed-ECAD) plasma source driven by an alternating current (AC) power supply coupled with a high-voltage diode was generated under normal atmospheric pressure between a metal electrode and a small-sized flowing liquid cathode. The spatial distributions of the excitation, vibrational, and rotational plasma temperatures of the pulsed-ECAD were investigated. The electron excitation temperature of H T_exc(H), vibrational temperature of N₂ T_vib(N₂), and rotational temperature of OH T_rot(OH) were from 4900?±?36 to 6800?±?108 K, from 4600?±?86 to 5800?±?100 K, and from 1050?±?20 to 1140?±?10 K, respectively. The temperature characteristics of the dc solution cathode glow discharge (dc-SCGD) were also studied for the comparison with the pulsed-ECAD. The effects of operating parameters, including the discharge voltage and discharge frequency, on the plasma temperatures were investigated. The electron number densities determined in the discharge system and dc-SCGD were 3.8–18.9?×?10¹⁴?cm^–3 and 2.6?×?10¹⁴ to 17.2?×?10¹⁴?cm^–3, respectively.