一种测量p-GaN载流子浓度的方法

提出了一种测量p-GaN载流子浓度的方法,其主要思想是利用p-n⁺结构GaN探测器长波和短波量子效率的差值随反向偏压的变化关系,找到p-GaN层刚好完全耗尽时的偏压,从而求出p-GaN层载流子浓度.模拟计算表明,该方法能够准确测量出p-GaN层的载流子浓度,而且受表面复合、欧姆接触影响很小.进一步研究了实际测量中如何选择p-GaN层厚度,计算结果表明,p-GaN层的优化厚度值随着p-GaN层的浓度增加而减小. 关键词： p-GaN 载流子浓度测量 紫外探测器     

直接带隙Ge$lt;sub$gt;1-$lt;em$gt;x$lt;/em$gt;$lt;/sub$gt;Sn$lt;sub$gt;$lt;em$gt;x$lt;/em$gt;$lt;/sub$gt;本征载流子浓度研究

通过合金化改性技术, Ge可由间接带隙半导体转变为直接带隙半导体. 改性后的Ge半导体可同时应用于光子器件和电子器件, 极具发展潜力. 基于直接带隙Ge_1-xSn_x半导体合金8带Kronig-Penny模型, 重点研究了其导带有效状态密度、价带有效状态密度及本征载流子浓度, 旨在为直接带隙改性Ge半导体物理的理解及相关器件的研究设计提供有价值的参考. 研究结果表明: 直接带隙Ge_1-xSn_x合金导带有效状态密度随着Sn组分x的增加而明显减小, 价带有效状态密度几乎不随Sn组分变化. 与体Ge半导体相比, 直接带隙Ge_1-xSn_x合金导带有效状态密度、价带有效状态密度分别低两个和一个数量级; 直接带隙Ge_1-xSn_x合金本征载流子浓度随着Sn组分的增加而增加, 比体Ge半导体高一个数量级以上. 关键词： 1-xSn_x')" href="#">Ge_1-xSn_x 直接带隙 本征载流子浓度     

Calculation of profile of charge carrier concentration in modulation doped structure with a wide potential well

We investigate the equilibrium state of interacting electron system with Fermi statistics in modulation doped structure with a wide quantum well. The model is formulated for the carrier system with a sufficiently high density, such that the de Broglie wavelength of electrons is smaller than the width of the quantum well. Due to a significant interaction of electrons with electric field of the doped layer, a state with strongly‐inhomogeneous density of electrons is formed. Within the hydrodynamic approach, we set up formalism for calculating the electron density across the width of the potential well. We have obtained the exact solution of the equations, which is expressed in terms of hypergeometric functions. Based on the deduced formulas, we performed numerical computations for the profile of carriers' concentrations in a potential well in the modulation doped Si/SiGe/Si structures.     

Optimize the thermoelectric performance of CdO ceramics by doping Zn

The thermoelectric performance of CdO ceramics was enhanced by simultaneously optimizing the electrical and thermal transport properties via a small amount of Zn doping(≤3%). The introduction of Zn can obviously increase the electrical conductivity of CdO due to the simultaneous increase of carrier concentration and mobility, and eventually results in an improvement in power factor. Zn doping is also effective in suppressing the thermal conductivity of CdO because of stronger phonon scatterings from point defects, Zn-riched second phase, and grain boundaries. A best ZT of about 0.45 has been achieved in the Cd_(1-x)Zn_xO systems at about 1000 K, which is comparable to the highest values reported for other n-type oxide TE materials.     

Low concentration of the superconducting phase and thermoelectric power in 90 K superconductors

The thermoelectrical power (TEP) and the electrical resistivity behaviour of three 90 K superconductors viz, Y₁Ba₂Cu₃O_7−x , Sm₁Ba₂Cu₃O_7−x and Gd₁Ba₂Cu₃O_7−x , after the specimens were quenched from the sintering temperature (920°C) to 77 K, are reported. Interestingly the Y₁₂₃ specimen, which has the presence of trace amount of the orthorhombic phase in an otherwise tetragonal phase and does not show a superconducting transition down to 77 K shows zero TEP around 82 K, theT _c for the well oxygenated specimen. The Sm and Gd specimens on the other hand show completely tetragonal structure, semiconducting behaviour in resistivity and no zero TEP up to 77 K. It is argued that the critical concentration of the superconducting phase necessary to make the TEP zero is much smaller than that required for zero resistivity.     

An alternative approach for microlithography light source

A hybrid master oscillator–power amplifier (hybrid MOPA) scheme is proposed as a microlithography light source. The seed pulses are generated in the visible spectral range—where the necessary spectral purity is more easily achieved—and after frequency conversion are amplified in an excimer amplifier. The new concept enables us to decrease the bandwidth considerably, approaching the theoretical limit posed by the uncertainty relation. The feasibility of the new approach is demonstrated by a dye/excimer MOPA system, generating deep ultraviolet DUV (248-nm) pulses of 0.2-pm bandwidth.     

Study of carrier concentration profiles in Al‐implanted Ge by micro‐Raman spectroscopy under different excitation wavelengths

The distribution profile of Al implanted in crystalline Ge has been investigated by micro‐Raman spectroscopy. Using different excitation laser lines, corresponding to different optical penetration depths, the Al concentration at different depths beneath the sample surface has been studied. We have found a strong correlation between the intensity of the Al–Ge Raman peak at ~370 cm⁻¹, which is due to the local vibrational mode of substitutional Al atoms, and the carrier concentration profile, obtained by the spreading resistance profiling analysis. A similar connection has been also observed for both shape and position of the Ge–Ge Raman peak at ~300 cm⁻¹. According to these experimental findings, we propose here a fast and nondestructive method, based on micro‐Raman spectroscopy under different excitation wavelengths, to estimate the carrier concentration profiles in Al‐implanted Ge. Copyright © 2013 John Wiley & Sons, Ltd.     

TDLAS气体浓度反演的状态空间方法

 针对基于可调谐激光二极管吸收光谱技术（TDLAS）的气体浓度测量系统,建立了气体状态空间模型,并将卡尔曼滤波算法应用于TDLAS浓度反演中。实验表明卡尔曼滤波可以很好地消除测量噪声和模型误差对实验结果的影响,与最小二乘拟合的方法相比,在相同信噪比下反演精度可以提高1倍以上。     

Development of n-type Te-doped GaSb substrates with low carrier concentration for FPA applications

Undoped GaSb is p-type with the residual acceptor concentration of about 1e17 cm⁻³ due to the gallium vacancies and gallium in antimony site. Counter-doping of GaSb with low level of Te can reduce the net carrier concentration resulting in higher optical transparency in a broad IR spectral range. In this work, the carrier concentration, mobility and sheet resistance of n-type and p-type Te-doped GaSb substrates were measured using Hall method at 300 K and 77 K. The Hall carrier concentration data at 300 K were correlated with the absorption coefficients of GaSb in the IR spectral range. An empirical relationship between these values was established. Based on this correlation, we discuss application of FTIR spectroscopy for non-destructive optical screening of the substrates that allows construction of the carrier concentration distribution map across GaSb wafers. Investigations of the electronic properties of the low-doped p-type and n-type GaSb substrates upon cooling down to 77 K indicate the reduction of the hole carrier concentration background for both GaSb types. This is evident from the decrease in the Hall-measured carrier concentration for p-type GaSb. For n-type GaSb, an increase in the carrier concentration is observed due to the reduction of the hole carrier concentration background.     

An efficient approach to characterizing and calculating carrier loss due to heating and barrier height variation invertical-cavity surface-emitting lasers

It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser (VCSEL). However, it is generally difficult to realize this goal using purely theoretical formulas due to difficulty in deriving the parameters relating to the quantum well structure. In this paper, we describe an efficient approach to characterizing and calculating the carrier loss due to the heating and the barrier height change in the VCSEL. In the method, the thermal carrier loss mechanism is combined with gain measurement and calculation. The carrier loss is re-characterized in a calculable form by constructing the threshold current and gain detuning-related loss current using the measured gain data and then substituting them for the quantum well-related parameters in the formula. The result can be expressed as a product of an exponential weight factor linked to the barrier height change and the difference between the threshold current and gain detuning-related loss current. The gain variation at cavity frequency due to thermal carrier loss and gain detuning processes is measured by using an AlInGaAs--AlGaAs VCSEL structure. This work provides a useful approach to analysing threshold and loss properties of the VCSEL, particularly, gain offset design for high temperature operation of VCSELs.     

Highly flexible and excellent performance continuous carbon nanotube fibrous thermoelectric modules for diversified applications

A highly flexible and continuous fibrous thermoelectric (TE) module with high-performance has been fabricated based on an ultra-long single-walled carbon nanotube fiber, which effectively avoids the drawbacks of traditional inorganic TE based modules. The maximum output power density of a 1-cm long fibrous TE module with 8 p-n pairs can reach to 3436 μW·cm^-2, the power per unit weight to 2034 μW·g^-1, at a steady-state temperature difference of 50 K. The continuous fibrous TE module is used to detect temperature change of a single point, which exhibits a good responsiveness and excellent stability. Because of its adjustability in length, the flexible fibrous TE module can satisfy the transformation of the temperature difference between two distant heat sources into electrical energy. Based on the signal of the as-fabricated TE module, a multi-region recognizer has been designed and demonstrated. The highly flexible and continuous fibrous TE module with excellent performance shows a great potential in diversified applications of TE generation, temperature detection, and position identification.     

An alternative approach to field-aligned coordinates for plasma turbulence simulations

In this work, a new approach to field-aligned coordinates for plasma turbulence is presented, in which the position along the field lines is identified by the toroidal angle. The several advantages of the new approach are discussed. It is also shown that the approach can be generalised to get rid of magnetic coordinates in the poloidal plane altogether. Tests are carried out by comparing codes implementing a basic ion temperature gradient turbulence model with the old and the new methods. Results show an unexpected property of the model, that localized large parallel gradients can intermittently appear in the turbulent regime.     

An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response

We report here a simple alternative method for measuring charge carrier drift mobilities in semiconductor devices. A typical falling photocurrent transient formula for switch-off-state was adjusted to obtain simultaneously electron and hole mobilities. For both undoped ZnO film and InAlAs/InGaAs quantum well structure, electron mobilities extracted from our model were compared with those obtained from maximum-entropy mobility-spectrum analysis method (ME-MSA). Our results demonstrated that electron mobility obtained from our photocurrent response model could serve as substitutes for a representative mobility obtained from ME-MSA.     

基于混合气体分子复合弛豫模型的一氧化碳浓度检测算法

研究了声波通过混合气体时,复合弛豫声吸收和声速与气体各成分浓度和声频率之间的依赖关系.以一氧化碳气体、水蒸气、氮气和氧气的混合气体为例,分别建立了弛豫声吸收和声速与气体浓度的三维模型,以及弛豫声吸收与声频率的二维模型.完成了通过测量弛豫声吸收和声速计算一氧化碳气体浓度的算法推导,提出了一种依据弛豫声吸收和声速检测气体浓度的简化算法.仿真实验结果不仅证明了算法的理论可行性,还给出了算法的最佳适用声频率范围,并估计了将算法应用于实验的误差原因,证明了算法具有实际可行性. 关键词： 气体浓度声学检测 一氧化碳浓度检测 复合弛豫声吸收 声速     

An optimal burst assembly approach employing traffic shaping (OBATS) for OBS

Optical burst switching (OBS) aims at combining the strengths of packet and circuit switching and is considered as a promising technology for implementing the next generation optical Internet, required to cope with the rapid growth of Internet traffic and the increased deployment of new services. In this paper, an optimal burst assembly approach employing traffic shaping (OBATS) for OBS networks has been proposed in order to improve network performance in terms of reduced blocking probability, congestion control and better utilization of bandwidth. Particularly, the proposed scheme aims at reducing the average delay experienced by the packets during the burstification process in optical burst switched (OBS) networks, for a given average size of the bursts produced. Reducing the packet burstification delay, for a given average burst size, is essential for real-time applications; correspondingly, increasing the average burst size for a given packet burstification delay is important for reducing the number of bursts injected into the network and the associated overhead imposed on the core nodes. Simulation results show that the proposed burst assembly approach gives better network performance in terms of burst drop, resource contention and delay as compared to conventional burst assembly approaches.     

在线原麦汁浓度检测仪

原麦汁浓度是啤酒生产过程中的一项重要指标。溶液的折射率是其浓度的函数 ,全反射的临界角与其浓度之间有一一对应关系。利用线阵CCD做为高精度探测器件 ,检测全反射临界角的变化 ,可测量溶液的浓度。临界角的变化与电源的波动及光源的强度变化等因素无关 ,并且溶液中的固体颗粒、小气泡等不影响检测精度。研制了一种在线检测原麦汁浓度的测试仪器 ,介绍了仪器的光学结构及数据处理方法。现场测量精度为± 0 1(以浓度表示)     

A non‐destructive approach for doping profiles characterization by micro‐Raman spectroscopy: the case of B‐implanted Ge

B‐implanted Ge samples have been investigated by micro‐Raman spectroscopy under different excitation wavelengths, with the aim of gaining insights about the B distribution at different depths beneath the sample surface. The intensities, observed under the different excitation wavelengths, of the B–Ge Raman peak at about 545 cm⁻¹, which is due to the local vibrational mode of the substitutional B atoms in the Ge matrix, have been used to calibrate the optical absorption lengths in B‐implanted Ge. Then, by using these calibrated values, a very sharp correlation between the spectral features of the Ge–Ge Raman peak at ~300 cm⁻¹ and the content of substitutional B atoms has been derived. Accordingly, a non‐destructive approach, based on micro‐Raman spectroscopy under different excitation wavelengths, is presented to estimate, at least at the lowest depths, the carrier concentration profiles from the spectral features of the Ge–Ge Raman peak. Copyright © 2014 John Wiley & Sons, Ltd.     

An alternative approach for charge decay measurement to assess the suitability of materials

A method of charge decay testing is proposed in which a localized electric field is applied by a fieldmeter to an area of the material to be tested. The variation of electric field is recorded as charge migrates across the surface. Arrangements are described for this method of testing and studies reported comparing results with corona and tribocharge decay measurements. Interesting differences are shown between the methods of testing.Induction charge decay testing is not proposed as a replacement for corona or tribocharge decay testing. It offers the opportunity for simpler instrumentation and measurement of faster charge decay times.     

一种生成质量最优路径纠缠微波信号的压缩参量选择方法

介绍了路径纠缠微波及其生成原理,将生成信号以量子力学算符的形式表示,并在光子数态表象下展开,定性地给出了生成信号与压缩参量之间的关系.提出了一种路径纠缠微波信号质量评价方法,即通过信号中纠缠微波光子总数的期望值表征信号的纠缠度,间接实现对信号质量的评价.基于这种信号质量评价方法,提出了一种生成质量最优路径纠缠微波信号的压缩参量选取方法:在近似确定有效纠缠微波光子数的前提下,找出生成不同微波光子数纠缠概率最大时的一组压缩参量值,进而得出各个压缩参量值所对应的一组纠缠微波光子总数的期望值,其中的最大值对应的压缩参量值即为生成质量最优信号所要选择的压缩参量值.通过理论分析,发现路径纠缠微波信号质量由压缩参量决定,且只与压缩幅有关,而与压缩角无关.仿真实验结果表明,在纠缠微波光子数的最大有效值取为"26"时,纠缠微波光子总数期望值的最大值对应的压缩幅值为1.77,即压缩幅取此值时所得到的路径纠缠微波信号质量最佳,仿真结果表明该方法是有效的.本文的研究为路径纠缠微波在实验研究和实际应用中如何生成高质量信号的问题提供了思路.     

射频功率放大器经典两盒模型的最优选取

提出了一种选取射频功率放大器的最优行为模型并获取指纹特征的方法。针对Wiener模型和Hammerstein模型,提出了一种基于加权最小二乘法的最优行为模型选取方法,并给出了具体的数学分析。并对实际系统的功率放大器进行数值仿真,验证了算法的可行性及有效性,即首先根据训练集得到放大器的行为模型系数,再采用多种评判标准,通过分析测试集、训练集的误差得到最优行为模型。数值仿真结果表明：本文提出的方法能够有效地选取射频功率放大器的最优行为模型,且拟合误差较小。