激光剥离技术实现垂直结构GaN基LED

为改善GaN基发光二极管(Light-emitting diode,LED)的电学特性和提高其输出光功率,采用激光剥离技术,在KrF准分子激光器脉冲激光能量密度为400mJ/cm2的条件下,将GaN基LED从蓝宝石衬底剥离,结合金属熔融键合技术,在300℃中将GaN基LED转移至高电导率和高热导率的硅衬底,制备出了具有垂直结构的GaN基LED,并对其电学和光学特性进行了测试。结果表明:在110mA注入电流下,垂直结构器件的开启电压由普通结构的3.68V降低到了3.27V;在560mA注入电流下,器件输出光功率没有出现饱和现象;采用高电导率和高热导率的硅衬底能有效地改善GaN基LED的电学和光学特性。     

III‐nitride quantum dots for ultra‐efficient solid‐state lighting

III‐nitride light‐emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III‐nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD‐based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD‐based LEDs achieve higher efficiencies at higher currents because of higher spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. If constructed properly, III‐nitride light‐emitting devices with QD active regions have the potential to outperform quantum well light‐emitting devices, and enable an era of ultra‐efficient solid‐state lighting.

     

Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes

The paper considers surface recombination at the free active region surface as the mechanism of carrier losses which has not yet been discussed with regard to III‐nitride LEDs despite of its evident importance for AlGaInP‐based light emitters. Using advanced thin‐film and triangular volumetric chip designs reported in literature as prototypes, we have demonstrated by simulation a noticeable impact of surface recombination on the wall‐plug efficiency of InGaN‐based LEDs. Various types of LEDs whose efficiency may be especially affected by surface recombination are discussed. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates

InGaN/GaN‐based light emitting diodes (LEDs) grown on m ‐plane, a ‐plane and off‐axis between m ‐ and a ‐plane GaN bulk substrates were investigated. A smooth surface was obtained when a ‐plane substrate was applied; however, large amounts of defects were observed. Photoluminescence measurements of the LEDs with a well thickness of 2.5 nm revealed that all the LEDs showed the peak emission wavelength at 389 nm. The PL intensity of the a ‐plane LED is one order of magnitude lower than that of the m ‐plane LED. The a ‐plane LEDs showed significant lower electroluminescence output powers than m ‐plane LEDs, suggesting that excitons are trapped by the defects, which act as non‐radiative recombination centers. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Yield analysis of large‐area high‐power single‐chip GaN‐based light‐emitting diodes with network design

In this Letter, a GaN‐based high‐power (HP) single‐chip (SC) large‐area LED with parallel and series network structure is fabricated. The optical characteristics of the HP‐SC LED is investigated. Driven at 600 mA, the optical output power of the HP‐SC LED chip is measured to be 9.7 W, corresponding to an EQE of 26.4%, which is 19.6% lower than that of the standard small LED cell due to both the lateral light‐extraction efficiency degradation and the self‐heating effect. A statistical analysis was carried out to investigate the yield of the fabricated HP‐SC LEDs, the experimental results agree with the theoretical calculations very well, validating the feasibility of this design on the production yield for the large‐area LEDs.

     

Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light engine of SSL still have significant performance limitations. Foremost among these is the decrease in efficiency at high input current densities widely known as “efficiency droop.” Efficiency droop limits input power densities, contrary to the desire to produce more photons per unit LED chip area and to make SSL more affordable. Pending a solution to efficiency droop, an alternative device could be a blue laser diode (LD). LDs, operated in stimulated emission, can have high efficiencies at much higher input power densities than LEDs can. In this article, LEDs and LDs for future SSL are explored by comparing: their current state‐of‐the‐art input‐power‐density‐dependent power‐conversion efficiencies; potential improvements both in their peak power‐conversion efficiencies and in the input power densities at which those efficiencies peak; and their economics for practical SSL.     

Bandgap engineering of GaxZn1–xO nanowire arrays for wavelength‐tunable light‐emitting diodes

Wavelength‐tunable light‐emitting diodes (LEDs) of Ga_xZn_1–xO nanowire arrays are demonstrated by a simple modified chemical vapor deposition heteroepitaxial growth on p‐GaN substrate. As a gallium atom has similar electronegativity and ion radius to a zinc atom, high‐level Ga‐doped Ga_xZn_1–xO nanowire arrays have been fabricated. As the x value gradually increases from 0 to 0.66, the near‐band‐edge emission peak of Ga_xZn_1–xO nanowires shows a significant shift from 378 nm (3.28 eV) to 418 nm (2.96 eV) in room‐temperature photoluminescence (PL) measurement. Importantly, the electroluminescence (EL) emission of Ga_xZn_1–xO nanowire arrays LED continuously shifts with a wider range (∼100 nm), from the ultraviolet (382 nm) to the visible (480 nm) spectral region. The presented work demonstrates the possibility of bandgap engineering of low‐dimensional ZnO nanowires by gallium doping and the potential application for wavelength‐tunable LEDs.     

Catalysis by hydrogen chloride in the gas‐phase elimination kinetics of 2‐phenyl‐2‐propanol and 3‐methyl‐1‐buten‐3‐ol

A homogeneous, molecular, gas‐phase elimination kinetics of 2‐phenyl‐2‐propanol and 3‐methyl‐1‐ buten‐3‐ol catalyzed by hydrogen chloride in the temperature range 325–386 °C and pressure range 34–149 torr are described. The rate coefficients are given by the following Arrhenius equations: for 2‐phenyl‐2‐propanol log k₁ (s^?1) = (11.01 ± 0.31) ? (109.5 ± 2.8) kJ mol^?1 (2.303 RT)^?1 and for 3‐methyl‐1‐buten‐3‐ol log k₁ (s^?1) = (11.50 ± 0.18) ? (116.5 ± 1.4) kJ mol^?1 (2.303 RT)^?1. Electron delocalization of the CH₂?CH and C₆H₅ appears to be an important effect in the rate enhancement of acid catalyzed tertiary alcohols in the gas phase. A concerted six‐member cyclic transition state type of mechanism appears to be, as described before, a rational interpretation for the dehydration process of these substrates. Copyright © 2007 John Wiley & Sons, Ltd.     

In‐situ X‐ray photoelectron spectroscopy of trimethyl aluminum and water half‐cycle treatments on HF‐treated and O3‐oxidized GaN substrates

We have investigated the effect of trimethyl aluminum (TMA) and water (H₂O) half‐cycle treatments on HF‐treated, and O₃‐oxidized GaN surfaces at 300 °C. The in‐situ X‐ray photoelectron spectroscopy results indicate no significant re‐growth of Ga–O–N or self‐cleaning on HF‐treated and O₃‐oxidized GaN substrates with exposure to water and TMA. This result is different from the self‐cleaning effect of Ga₂O₃ seen on sulfur‐treated GaAs or InGaAs substrates. O₃ causes aggressive oxidation of GaN substrate and direct O–N bonding compared to H₂O. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

It's not easy being green: Strategies for all‐nitrides,all‐colour solid state lighting

The design strategy presently employed to obtain ‘white’ light from semiconductors combines the emission of an InGaN blue or UV light‐emitting diode (LED) with that of one or more yellow‐orange phosphors. While commercially successful, this approach achieves good colour rendering only by increasing the number and spectral range of the phosphors used; compared to the alternative of combining ‘true’ red, green and blue (RGB) sources, it is intrinsically inefficient. The two major roadblocks to the RGB approach are 1. the green gap in the internal quantum efficiency (IQE) of LEDs; 2. the diode droop in the efficiency of LEDs at higher current densities. The physical origin of these effects, in the case of III‐nitrides, is generally thought to be a combination of Quantum Confined Stark Effect (QCSE) and Auger Effect (AE). These effects respectively reduce the electron–hole wave‐ function overlap of In‐rich InGaN quantum wells (QW), and provide a non‐radiative shunt for electron–hole recombination, particularly at higher excitation densities. SORBET, a novel band gap engineering strategy based upon quantum well intermixing (QWIM), offers solutions to both of the roadblocks mentioned above. In this introduction to SORBET, its great potential is tested and confirmed by the results of simulations of green InGaN diodes performed using the TiberCAD device modelling suite, which calculates the macroscopic properties of real‐world optoelectronic and electronic devices in a multiscale formalism. An alternative approach to the realisation of RGB GaN‐based LEDs through doping of an active layer by rare earth (RE) ions will also be briefly described. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Low-temperature laser processes for synthesizing (100)-textured Pb(Zr,Ti)O3 thin films on Si substrate

High-performance Pb(Zr,Ti)O₃, PZT, thin films were synthesized on Si substrates by using low-temperature laser-assisted processes, which combine pulsed laser deposition (PLD), laser lift-off (LLO) and laser-annealing (LA) processes. The PZT films were first grown on sapphire substrates at 400 °C, using Ba(Mg_1/3Ta_2/3)O₃, BMT, as seeding layer, by the PLD process, and were then transferred to Si substrates at room temperature by a LLO transferring process. Utilization of the BMT layer is of critical importance in those processes, since it acted as a nucleation layer for the synthesis of the PZT thin films on the sapphire substrates and, at the same time, served as a sacrificial layer during laser irradiation in the LLO process. After the LLO process, the surfaces of the PZT films were recovered by the LA process for removing the damage induced by the LLO process. A thin BMT (∼30 nm) layer is randomly oriented, resulting in non-textured PZT films with good ferroelectric properties, viz. P_r=20.6 μC/cm² and E_c=126 kV/cm, whereas a thick BMT (∼100 nm) layer is (100) preferentially oriented, leading to (100)-textured PZT films with markedly better ferroelectric properties, viz. P_r=34.4 μC/cm² and E_c=360 kV/cm. PACS 81.15.Fg; 77.84.-s     

Theoretical calculations for neighboring group participation in gas‐phase elimination kinetics of 2‐hydroxyphenethyl chloride and 2‐methoxyphenethyl chloride

Theoretical calculation of the kinetics and mechanisms of gas‐phase elimination of 2‐hydroxyphenethyl chloride and 2‐methoxyphenethyl chloride has been carried out at the MP2/6‐31G(d,p), B3LYP/6‐31G(d,p), B3LYP/6‐31 + G(d,p), B3PW91/6‐31G(d,p) and CCSD(T) levels of the theory. The two substrates undergo parallel elimination reactions. The first process of elimination appears to proceed through a three‐membered cyclic transition state by the anchimeric assistance of the aromatic ring to produce the corresponding styrene product and HCl. The second process of elimination occurs through a five‐membered cyclic transition state by participation of the oxygen of o‐OH or the o‐OCH₃ to yield in both cases benzohydrofuran. The B3PW91/6‐31G(d,p) method was found to be in good agreement with the experimental kinetic and thermodynamic parameters for both substrates in the two reaction channels. However, some differences in the performance of the different methods are observed. NBO analysis of the pyrolysis of both phenethyl chlorides implies a C? Cl bond polarization, in the sense of C^δ+…Cl^δ?, which is a rate‐determining step for both parallel reactions. Synchronicity parameters imply polar transition states of these elimination reactions. Copyright © 2009 John Wiley & Sons, Ltd.     

Micro‐LED pumped polymer laser: A discussion of future pump sources for organic lasers

Optical pumping conditions for organic solid‐state lasers (OSLs) are discussed with particular emphasis on the use of gallium nitride based light‐emitting diodes (LEDs) as pump sources. LEDs operate in a regime where the pump should be optimized for a short rise time and high peak intensity, whereas fall time and overall pulse duration are less important. Lasers pumped with this approach need to have very low thresholds which can now be routinely created using (one‐dimensional) distributed feedback lasers. In this particular case stripe‐shaped excitation with linearly polarized light is beneficial. Arrays of micron‐sized flip‐chip LEDs have been arranged in an appropriate stripe shape and the array dimensions were chosen such that the divergence of LED emission does not cause a loss in peak intensity. These micro‐LED arrays have successfully been used to pump OSLs with thresholds near 300 W/cm² (∼9 ns rise time, 35 ns pulse duration), paving the way for compact arrays of indirectly electrically pumped OSLs.     

Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs

Improved nonpolar m ‐plane light emitting diodes (LEDs) with a thick InGaN multi‐quantum‐well (MQW) structure have been fabricated on low extended defect bulk m ‐plane GaN substrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electroluminescence emission from the packaged LEDs was 402 nm, which is in the blue‐violet region. The output power and EQE were 28 mW and 45.4%, respectively, at a pulsed driving current of 20 mA. With increasing current, the output power increased linearly, and fairly flat EQE was observed with increasing drive current. At 200 mA, the power and EQE were 250 mW and 41%, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Laser‐Induced Self‐Assembled Nanostructures on Electron‐Transparent Substrates

Currently, one of the challenges in high‐resolution transmission electron microscopy (TEM) studies of nanomaterials is to make contamination‐free materials in a simple and time‐efficient way. Here, a method is demonstrated that combines nanosecond‐pulsed laser dewetting of thin films with a film float‐off technique to realize nanostructures (NSs) on electron‐transparent substrates in a robust and rapid manner. NSs of metal (Ag) and bimetals (AgCo, AuCo) ranging from 20 to 150 nm are synthesized on thin carbon film deposited on mica substrates. The NS/carbon system is subsequently transferred onto TEM grids by a float‐off process resulting from debonding of the carbon from mica due to their contrasting hydrophobic nature. This process enables the fabrication of different NSs on flexible and electron‐transparent substrates.     

Density functional theory study on a fluorescent chemosensor device of aza‐crown ether

Three derivatives of alkyl anthracene covalently bonded to aza‐18‐crown‐6 at the nitrogen position, anthracene(CH₂)_n, (n = 1–3) which act as an on–off fluorogenic photoswitch have been theoretically studied using a computational strategy based on density functional theory at B3LYP/6‐31 + G(d,p) method. The fully optimized geometries have been performed with real frequencies which indicate the minima states. The binding energies, enthalpies and Gibbs free energies have been calculated for aza‐18‐crown‐6 ( L ) and their metal complexes. The natural bond orbital analysis is used to explore the interaction of host–guest molecules. The absorption spectra differences between L and their metal ligands, the excitation energies and absorption wavelength for their excited states have been studied by time‐dependent density functional theory with the basis set 6‐31 + G(d,p). These fluorescent sensors and switchers based on photoinduced electron transfer mechanism have been investigated. The PET process from aza‐crown ether to fluorophore can be suppressed or completely blocked by the entry of alkali metal cations into the aza‐crown ether‐based receptor. Such a suppression of the PET process means that fluorescence intensity is enhanced. The binding selectivity studies of the aza‐crown ether part of L indicate that the presence of the alkali metal cations Li⁺, Na⁺ and K⁺ play an important role in determining the internal charge transfer and the fluorescence properties of the complexes. In addition, the solvent effect has been investigated. Copyright © 2014 John Wiley & Sons, Ltd.     

X‐ray‐induced Cu deposition and patterning on insulators at room temperature

X‐ray irradiation is shown to trigger the deposition of Cu from solution, at room temperature, on a wide variety of insulating substrates: glass, passivated Si, TiN/Ti/SiO₂/Si and photoresists like PMMA and SU‐8. The process is suitable for patterning and the products can be used as seeds for electroplating of thicker overlayers.     

Efficiency droop in light‐emitting diodes: Challenges and countermeasures

Efficiency droop, i.e. the loss of efficiency at high operating current, afflicts nitride‐based light‐emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research, as it retards the advancement of solid‐state lighting which is just starting to supplant fluorescent as well as incandescent lighting. Although the technical community does not yet have consented to a single cause of droop, this article provides a summary of the present state of droop research, reviews currently discussed droop mechanisms, and presents a recently developed theoretical model for the efficiency droop. In the theoretical model, carrier leakage out of the active region caused by the asymmetry of the pn junction, specifically the disparity between electron and hole concentrations and mobilities, is discussed in detail. The model is in agreement with the droop's key behaviors not only for GaInN LEDs but also for AlGaInP LEDs.     

Optimization of extinction efficiency of gold‐coated polystyrene bead substrates improves surface‐enhanced Raman scattering effects by post‐growth microwave heating treatment

We report a novel post‐growth microwave treatment approach to selectively modify the surface morphologies of gold (Au) films coated on the polystyrene (PS) bead substrates for effectively improving the surface‐enhanced Raman scattering (SERS) effect on the analytes. The discrete dipole approximation (DDA) model was introduced to evaluate the enhancement effects by calculating the localized electromagnetic field distribution and extinction efficiency based on the sizes of the trenches and voids, and the surface roughness of the modified Au–PS bead substrates. The SERS performance of microwave‐modified Au–PS substrates on rhodamine 6G (Rh 6G) and saliva yields at least 10‐fold improvements in SERS intensities compared to the as‐grown substrates, which is also in agreement with theoretical predictions by DDA modeling. This work demonstrates both experimentally and theoretically the efficacy of the microwave heating treatment on modifying the Au–PS bead substrates for the realization of high SERS performance in biomedical applications. Copyright © 2009 John Wiley & Sons, Ltd.     

An improved self‐assembly gold colloid film as surface‐enhanced Raman substrate for detection of trace‐level polycyclic aromatic hydrocarbons in aqueous solution

To detect trace‐level polycyclic aromatic hydrocarbons, some investigations of an improved self‐assembly method are carried out using gold colloid films for the preparation of the surface‐enhanced Raman scattering (SERS)‐active substrate. Extinction spectra and scanning electron microscopy images reveal that controllable surface plasmonic metal substrates can be obtained by increasing the temperature of (3‐aminopropyl)trimethoxysilane solution up to 64.5 °C. The SERS‐active substrates have a high enhancement factor, and they can be both easily prepared and reproducible. With the use of these substrates, different concentrations of pyrene and anthracene in aqueous solutions were detected by SERS. A further enhancement can be supported by shifted excitation Raman difference spectroscopy. Raman signals of pyrene and anthracene adsorbed on gold colloid substrates up to limits of detection at 5 and 1 nmol/l, respectively, can be obtained. The quantitative analysis shows the possibility of in situ detection of polycyclic aromatic hydrocarbons while such gold colloid film serves as a SERS‐active substrate. Copyright © 2012 John Wiley & Sons, Ltd.