简化共沉淀法制备CaCu3Ti4O12陶瓷及其介电性能研究

具有巨介电常数的CaCu₃Ti₄O₁₂陶瓷是一种理想的高储能密度电容器材料.本文以草酸为沉淀剂、以乙酸铵为调节pH值的定量缓冲剂,获得制备CaCu₃Ti₄O₁₂陶瓷的简化共沉淀法.确定了pH=30为制备前驱粉料的最佳反应条件.通过显微分析和介电性能测量,发现在1040℃—1100℃范围内,随着烧结温度的提高,陶瓷的品粒尺寸增大,非线性系数上升,电位梯度和介电损耗下降,1100℃烧结的试样tanδ最低达到0.04.认为CaCu₃Ti₄O₁₂陶瓷介电损耗包含直流电导分量、低频松弛损耗和高频松弛损耗.低频松弛活化能为0.51 eV.,对应于晶界处的Maxwell-Wagner松弛极化;高频松弛过程活化能为0.10 eV,对应晶粒内部的氧空位缺陷.烧结温度的升高导致晶界电阻下降.     

Effect of Sb doping on phase transition and relaxor behaviour of (Pb0.75Ba0.25)(Zr0.70Ti0.30)O3 ceramics

The effect of antimony dopant on phase transition, dielectric response and relaxor behaviour of (Pb_0.75Ba_0.25)(Zr_0.70Ti_0.30)O₃ ceramics was studied. Ceramic samples, with various Sb concentration from the range 1 to 4 at.%, were prepared by a conventional mixed oxide method. The crystal structure of the investigated ceramics was determined by an X-ray diffraction at room temperature that allowed to determine the unit cell parameters. Dielectric relaxation typical for ferroelectric relaxors was observed in the vicinity of diffuse ferroelectric–paraelectric phase transition. All parameters describing the relaxor behaviour determined from the Vogel–Fulcher relationship depend on the concentration of Sb dopant. The strong influence of antimony on grain structure and on remanent polarisation was confirmed as well.     

CaCu3Ti4O12块材和薄膜的巨介电常数

用固相反应法和脉冲激光沉积 (PLD)制备了CaCu3Ti4O1 2 块材和薄膜 ,获得了相对介电常数ε′( 1kHz ,3 0 0K)高于140 0 0的介电特性 ,是目前该体系最好的结果 .报道了 ( 0 0l)取向高质量CaCu3Ti4O1 2 外延薄膜及其介电性质 .CaCu3Ti4O1 2 相对介电常数ε′在 10 0— 3 0 0K温度范围内基本保持恒定 ,稳定性好 .基于跳跃电导模型 ,对CaCu3Ti4O1 2薄膜介电电导的频率依赖关系作了合理解释     

Emergence of the sub‐THz central peak at phase transitions in artificial BaTiO3/(Ba,Sr)TiO3 superlattices

A prominent central peak in the sub‐THz frequency range was observed in the Raman spectra of BaTiO₃/(Ba,Sr)TiO₃ (BT/BST) superlattice grown on (001)MgO substrate. Both soft and central mode show an anomaly around 200 K and 280 K, which can be correlated with orthorhombic to monoclinic phase transition of BST and BT, respectively. The observed temperature dependence of the central mode enabled us to explain rather broad temperature dependence of the dielectric permittivity previously observed in BT/BST superlattices. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

锰掺杂对Ba(Zr,Ti)O3陶瓷压电与介电性能的影响

采用氧化物固相反应法制备了锰掺杂改性的Ba(Zr_0.06Ti_0.94)O₃陶瓷.研究了锰的掺杂量对Ba(Zr_0.06Ti_0.94)Mn_xO₃ (BZTM)陶瓷的结构、介电和压电性能的影响.实验发现,当锰含量x<0.5 mol%时进入晶格,使材料压电性能提高,损耗减小,表现出受主掺杂的特性;当锰含量x>0.5 mo 关键词： Ba(Zr 3 陶瓷')" href="#">Ti)O₃ 陶瓷 锰掺杂 介电性能 压电性能     

New crystallographic dielectric phase boundary in K0.5Na0.5NbO3‐based lead‐free ceramics

0.979K_0.5Na_0.5Nb_1‐xSb_x O₃‐0.021Bi_0.5Na_0.5TiO₃ (KNNSx ‐BNT) lead‐free piezoelectric ceramics were fabricated by conventional solid state reaction technique, and their phase transition and electrical properties were studied. With the increase of x, the rhombohedral‐orthorhombic phase transition temperature of the ceramics increases. Finally, both the rhombohedral‐orthorhombic and orthorhombic‐tetragonal phase transitions of the ceramics were modified to be around room tempera‐ ture when about 6% Sb were substituted for the Nb site, resulting in the formation of a new phase boundary separating rhombohedral and tetragonal phases. The formation of the new phase boundary results in excellent properties for the ceramics, that is, the KNNS0.05‐BNT ceramic shows an enhancement in piezoelectric properties: d₃₃ = 380 pC/N and k_P = 0.438. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Current–voltage characteristic of BaTiO3−δ in its mixed n/p regime under oxygen potential gradients

Current (I)–voltage (V) characteristic under oxygen potential gradients was experimentally examined on single crystal BaTiO_3−δ in its mixed ion/electron/hole regime at 1000 °C. The variation of I vs. V appears similar to that of an n/p junction, but with the limiting slope (dI/dV) approaching the maximum and minimum possible equilibrium conductances in the given oxygen potential gradient as increasing forward and reverse bias, respectively. This characteristic has been precisely traced theoretically by using the partial ionic and electronic conductivities of BaTiO_3−δ as measured against uniform oxygen chemical potential in equilibrium state. The nonlinear characteristic is attributed to the redistribution of oxygen chemical potential that is caused by a non-vanishing gradient of the ionic transference number of the oxide under the given oxygen potential gradient. It is demonstrated that the bulk transport properties of a mixed conductor may be tailored by terminal voltage in a chemical potential gradient.     

氧含量对CaCu3Ti4O12巨介电常数和介电过程的影响

本文研究了在真空、空气和氧气中烧结制备的三种 CaCu₃Ti₄O₁₂陶瓷材料的介电特性. 交流阻抗测量结果表明在10—300 K温度范围, 三种样品的介电温谱中均出现三个平台, 其电阻实部和电容虚部在相应温度出现损耗峰, 真空条件烧结的样品具有较高的介电平台和较明显的电阻实部与电容虚部峰值, 表明氧含量和氧空位对CaCu₃Ti₄O₁₂的介电性质具有重要影响, 介电温谱出现的三个平台分别源于晶粒、晶界及氧空位陷阱.温谱分析表明晶粒的激活能与烧结气氛有较大关系,氧空位引起的电子短程跳跃及跳跃产生的极化子是晶粒电导和电容的主要起源.氧空位陷阱的激活能基本与烧结气氛无关,约为0.46 eV. 氧空位对载流子的陷阱作用是CaCu₃Ti₄O₁₂ 低频高介电常数的重要起源.     

CaCu3Ti4O12块材和薄膜的巨介电常数

用固相反应法和脉冲激光沉积(PLD)制备了CaCu₃Ti₄O₁₂块材和薄膜，获得了相对介电常数ε′（1kHz,300K)高于14000的介电特性，是目前该体系最好的结果.报道了(00l)取向高质量CaCu₃Ti₄O₁₂外延薄膜及其介电性质.C aCu₃Ti₄O₁₂相对介电常数ε′在100—300K温度范围 内 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 巨介电常数 PLD     

Raman light scattering,infrared absorption and DSC studies of the phase transition and vibrational and reorientational dynamics of H2O ligands and ClO4– anions in [Ba(H2O)3](ClO4)2

[Ba(H₂O)₃](ClO₄)₂ between 90 and 300 K possesses two solid phases. One phase transition of the first‐order type at: = 211.3 K (on heating) and = 204.6 K (on cooling) was determined by differential scanning calorimetry. The entropy change value (ΔS ≈ 15 Jmol^–1 K^–1), associated with the observed phase transition, indicates a moderate degree of molecular dynamical disorder. Both, vibrational and reorientational motions of H₂O ligands and ClO₄^– anions, in the high‐temperature and low‐temperature phases, were investigated by Fourier transform far‐infrared and middle‐infrared and Raman light scattering spectroscopies. The temperature dependences of the full‐width at half‐maximum values of the bands associated with ρ_w(H₂O) mode, in both infrared (~570 cm^–1) and Raman light scattering (~535 cm^–1) spectra, suggest that the observed phase transition is not associated with a sudden change of a speed of the H₂O reorientational motions. Ligands reorient fast, with correlation time of the order of several picoseconds, with a mean activation energy value E_a = 5.1 kJ mol^–1 in both high and low temperature phases. On the other hand, measurements of temperature dependences of full‐width at half‐maximum values of the infrared band at ~460 cm^–1, associated with δ_d(OClO)E mode, and Raman band at ~1105 cm^–1, associated with ν_as(ClO)F₂ mode, revealed the existence of a fast ClO₄^– reorientation in phase I and in phase II, with the E_a(I) and E_a(II) values equal to 8.0 and 6.5 kJ mol^–1, respectively. These reorientational motions of ClO₄^– are slightly distorted at the T_C. Fourier transform far‐infrared and middle‐infrared spectra with decreasing of temperature indicated characteristic changes at the vicinity of PT at T_C, which suggested lowering of the crystal structure symmetry. All these experimental facts suggest that the discovered phase transition is associated with small change of H₂O ligands and somewhat major change of ClO₄^– anions reorientational dynamics, and with insignificant change of the crystal structure, too. Copyright © 2012 John Wiley & Sons, Ltd.     

Control of photoluminescence in Ca3–3x /7Y2x /7(PO4)2:Eu2+ phosphors by migration of the dopant

A series of Ca_{3–3x /7}Y_{2x /7}(PO₄)₂:Eu²⁺ phosphors were synthesized by conventional solid‐state reaction. The photoluminescence spectra elucidate that the evolution of emission hue from violet–blue to blue–greenish could be realized by incorporating Y³⁺ ions. The aliovalent substitution of Y³⁺ for Ca²⁺ forms cationic vacancies (h denotes a vacancy) at Ca(4) site according to the formula 3Ca²⁺ = 2Y³⁺ + h, and then facilitates the migration of dopant Eu²⁺ from Ca(4) site to other sites in host lattice. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Evidence for pinning by (Sr,Ca)2CuOy particles in partial-melting processed bulk Bi2Sr2CaCu2O8+δ ceramics

Flux distributions of partial-melting processed Bi₂Sr₂CaCu₂O_8+δ ceramics are obtained using magneto-optic imaging. In remanent states (μ₀H_a=0 T), large amounts of trapped flux are observed along (Sr,Ca)₂CuO_y particles embedded in the Bi₂Sr₂CaCu₂O_8+δ matrix. Despite the relatively large size of these particles (up to 30 μm), the pinning effect is similar to that of Y₂BaCuO₅ particles in melt-processed YBa₂Cu₃O_7−δ. Furthermore, we discuss how the pinning capability of non-superconducting particles of different sizes and densities will show up in magneto-optic images.     

Contours of constant Δ and Ψ in the 2–4 plane for the ellipsometric functions

Contour graphs of ₂ vs ₄ for different film thicknesses and a range of angles of incidence have been plotted for the ellipsometric functions Δ and Ψ in both the reflection and transmission modes. In the case of reflection ellipsometry, when the plots for Δ_R and Ψ_R are superimposed, the two sets of contours cross nearly at right angles over a large part of the field, this being indicative of the high accuracy obtainable in using this technique to determine ₄ and ₂ and hence the optical constants, n and k, for the film material. The reflection ellipsometric technique is accurate over angles of incidence between 30° and 75° and for a range of film thicknesses between λ/30 and 5λ. Transmission ellipsometry is less useful, due to anomalies in both X_s and X_p where sudden phase changes of ±π occur in regions of interest. There is also the possibility of multiple solutions, although the use of a multiangle technique would enable the “correct” values to be more easily determined.