Effect of Cu–Al double substitution on the electrical properties of Bi4V2O11

Bi₂Cu_0.1?xAl_xV_0.9O_5.35?x/2?δ, 0.02 ≤ x ≤ 0.08, were synthesized by standard solid-state reaction route. Structural and electrical properties of samples are characterized by X-ray diffraction (XRD), differential thermal analysis (DTA), Fourier transform infrared (FT-IR) and alternating current (AC) impedance spectroscopy. The tetragonal γ′ phase structure is preserved to room temperature with compound x = 0.02. The stabilization of β orthorhombic phase is observed for compositions 0.04 ≤ x ≤ 0.05. As the Al content increases, the monoclinic α phase is evidenced for materials 0.06 ≤ x ≤ 0.08. The electrical investigation of Bi₂Cu_0.1?xAl_xV_0.9O_5.35?x/2?δ system has been performed in the frequency range from 20 Hz to 1 MHz using AC impedance spectroscopy. The impedance spectra indicate the two semicircle arcs associated with the bulk and grain boundary resistances at temperature below ～450 ^○C. The conductivity generally changes when Al is substituted. The highest conductivity at 300 ^○C (σ = 2.55 × 10^?4 S cm^?1) is shown for x = 0.02.     

Effect of Ge doping on the electrical properties of amorphous Zn–Sn–O thin films

We report the effect of germanium doping on the active layer of amorphous Zinc–Tin-Oxide (a-ZTO) thin film transistor (TFT). Amorphous thin film samples were prepared by RF magnetron sputtering using single targets composed of Zn₂Ge_0.05Sn_0.95O₄ and Zn₂SnO₄ with variable oxygen contents in the sputtering gases. In comparison with undoped, Ge-doped a-ZTO films exhibited five order of magnitude lower carrier density with a significantly higher Hall-mobility, which might be due to suppressed oxygen vacancies in the a-ZTO lattice since the Ge substituent for the Sn site has relatively higher oxygen affinity. Thus, the bulk and interface trap densities of Ge-doped a-ZTO film were decreased one order of magnitude to 7.047 × 10¹⁸ eV⁻¹cm⁻³ and 3.52 × 10¹¹ eV⁻¹cm⁻², respectively. A bottom-gate TFT with the Ge-doped a-ZTO active layer showed considerably improved performance with a reduced SS, positively shifted V_th, and two orders of magnitude increased I_on/I_off ratio, attributable to the doped Ge ions.     

Effect of Ti4+ substitution on the hyperfine properties of Li–Sb–Ti ferrites using Mössbauer spectroscopy

Mössbauer investigations were carried out at room temperature on the ferrite system Li_0.6?+?0.5tFe_2.3???1.5tTi_tSb_0.1O₄ (0.0 ≤ t ≤ 1.0 in steps of 0.2). The effect of Ti^4?+? concentration on the various hyperfine interactions like Isomer shift, quadrupole splitting and internal magnetic field have been studied. The spectra exhibited well-defined Zeeman sextets at low substitution level, corresponding to the A and B sites. The sample with t = 1.0 showed paramagnetic behaviour. The results obtained have been discussed.     

Effect of annealing temperature on the microstructure and optical–electrical properties of Cu–Al–O thin films

We have successfully prepared Cu–Al–O thin films on silicon (100) and quartz substrates by radio frequency (RF) magnetron sputtering method. The as-deposited Cu–Al–O film is amorphous in nature and post-annealing treatment in argon ambience results in crystallization of the films and the formation of CuAlO₂. The annealing temperature plays an important role in the surface morphology, phase constitution and preferred growth orientation of CuAlO₂ phase, thus affecting the properties of the film. The film annealed at 900 °C is mainly composed of CuAlO₂ phase and shows smooth surface morphology with well-defined grain boundaries, thus exhibiting the optimum optical–electrical properties with electrical resistivity being 79.7 Ω·cm at room temperature and optical transmittance being 80% in visible region. The direct optical band gaps of the films are found in the range of 3.3–3.8 eV depending on the annealing temperature.     

Effect of nanoparticles on the magnetic properties of Mn–Zn soft ferrite

In this paper, the effect of nanostructures on the magnetic properties like the specific saturation magnetization (σ_S) and the coercivity (H_C) for Mn_0.4Zn_0.6Fe₂O₄ ferrite prepared by the co-precipitation method has been presented. We have shown by means of X-ray diffraction that the resulting ferrite is made up of nanoparticles, and that the average size of these nanoparticles calculated with the Scherrer formula depends upon the sintering temperature. When the sintering temperature is increased from 500 to 900 °C, the average nanoparticle diameter varies from 19.3 to 36.4 nm. The nanoparticle phase is further confirmed by scanning electron microscopy (SEM). Both results are found to be in good agreement. The magnetic properties are explained on the basis of the single-domain and multi-domain theory.     

Effect of chain length and donor–acceptor substitution on the electrical responsive properties of conjugated biphenyls: a DFT-based computational study

The effect of donor–acceptor (D-A) substituent and chain length on the electrical polarisabilities and first hyper polarisability of cis and trans biphenyl oligomeric compounds have been investigated using density functional theory-based hybrid functional CAM-B3LYP with 6-311G (2d,2p) basis set. Our extensive computational study reveals that both average polarisability and first hyper polarisability of the studied compounds increase with the increasing ethylene spacer chain length. Again the substitution of donor (NMe₂) and acceptor (C≡N) at the para position of the phenyl rings to each oligomer shows order of magnitude increase of both α_av and β_av value compared to the unsubstituted one. This increased α_av and β_av values have been explained due to increasing charge transfer contribution resulting from decreasing optical energy gap (ΔE?=?S₁???S₀) upon D-A substitution. It is also observed that the charge transfer contribution to first hyperpolarisability (β_CT) is more than the polarisability (α_CT) for the studied molecules. The electronic spatial extent (<R²>) which is a measure of electron density volume around the molecule is found to play a major role along with the intramolecular charge transfer character to explain the non-linear variation of first hyperpolarisability (β_av) as a function of ethylene spacer chain length (n) and D-A substitution.     

Influence of iron ions on dielectric properties of the PbO–Bi2O3–B2O3 glass system

PbO–Bi₂O₃–B₂O₃ glasses containing small concentrations of Fe₂O₃ (0–1 mol%) were subject to dielectric studies (dielectric constant ε′; loss tan δ; and ac conductivity σ _ac) over a wide range of frequency and temperature. From spectroscopic (infrared, optical absorption and ESR spectra) and magnetic susceptibility studies, variations in these properties with dopant ion concentration were analyzed in terms of different oxidation states and iron ion environment in the glass network.     

Effect of B2O3 on the structure and properties of tungsten–tellurite glasses

The elastic properties and Debye temperatures of xB₂O₃–70TeO₂–(30–x)WO₃, (0 ≤ x ≤ 30 mol%) glasses have been investigated using sound velocity measurements at 4 MHz. Ultrasonic and thermal parameters, combined with the results of IR spectroscopic analyses, were employed to explore the effect of B₂O₃ on the structure of tungsten–tellurite glasses. According to IR analysis, there is competition between WO₆ and TeO₄ units to form BO₄ units, and the vibrations of the tellurite structural units are shifted towards lower wavenumbers on the formation of non-bridging oxygens. It is assumed that B₂O₃ acts as a modifier by decreasing the glass-transition temperature T _g and increasing both the thermal stability and glass formation range of the tellurite glasses. The change in density and molar volume with B₂O₃ content reveals that the borate units are less dense than the tellurite structural units. The observed compositional dependence of elastic moduli is interpreted in terms of the effect of B₂O₃ on the coordination number of the tellurite units. A good correlation was observed between experimentally determined elastic moduli and those computed with the Makishima–Mackenzie model.     

Study of electrical conductivity and phase transition in Bi2O3–V2O5 system

The solid solutions of bismuth–vanadate were prepared by the conventional solid-state reaction. The sample characterization and the study of phase transition were done by using FT-IR, X-ray diffraction (XRD) and DSC measurements. AC impedance measurements proved that the oxide ion conductivity predominantly arises from the grain and grain boundary contributions as two well-defined semicircles are clearly seen along with an inclined spike. The electrical conductivity of Bi₂O₃–V₂O₅ has been studied at different temperatures for various molar ratios. The isothermal conductivity increases with an increase in the concentration of V₂O₅ due to the vacancy migration phenomenon. It has been found that the conductivity of different compositions of Bi₂O₃–V₂O₅ increases and shows a jump in the temperature range 230–260°C due to the phase transition of BiVO₄ from monoclinic scheelite type to that of tetragonal scheelite type. The endothermic peak in DSC at around 260°C reveals the phase transition, which is also confirmed by the XRD and FT-IR analysis. The XRD patterns confirmed the monoclinic structure of BiVO₄.     

Effect of zinc concentration on the structural,electrical and magnetic properties of mixed Mn–Zn and Ni–Zn ferrites synthesized by the citrate precursor technique

Mixed manganese-zinc and nickel-zinc ferrites of composition Mn_0.2Ni_0.8−xZn_xFe₂O₄ where x=0.4$x=0.4$, 0.5 and 0.6 have been synthesized by the citrate precursor technique. Decomposition of the precursor at temperatures as low as 500 °C gives the ferrite powder. The ferrites have been investigated for their electrical and magnetic properties such as saturation magnetization, initial permeability, Curie temperature, AC-resistivity and dielectric constant as a function of sintering temperature and zinc content. Structural properties such as lattice parameter, grain size and density are also studied. The mixed compositions exhibited higher saturation magnetizations at sintering temperatures as low as 1200 °C. While the Curie temperature decreased with zinc content, the permeability was found to increase. The AC-resistivity ranged from 10⁵–10⁷ Ω cm and decreased with zinc content and sintering temperature. The dielectric constants were lower than those normally reported for the Mn–Zn ferrites. Samples sintered at 1400 °C densified to about 94% of the theoretical density and the grain size was of the order of about 1.5 μm for the samples sintered at 1200 °C and increased subsequently with sintering temperature.     

Effect of composition and light intensity on the electrical properties of Sn–Sb–Se glassy films

Electrical and photoelectrical measurements have been performed on Sn_xSb₂₀Se_70-x (8≤x≤16) glassy films. The dc activation energy, optical gap and photoconduction parameters show a typical variation near x=10 composition indicating the occurrence of a rigidity percolation threshold in the present system. The photosensitivity increases with the increase in Sn content up to x=14 and an abrupt decrease for x=16 composition. Negative photoconductivity region have been observed in the higher temperature side for samples with x=10 and 16. This system belongs to the type II category of photoconductors. The results are explained on the basis of a change in the density of localized states present in the mobility gap with the change in the composition. PACS 71.20.Nr; 72.20.-I; 78.66.Jg; 81.05.Gc; 73.50.Pz     

Effect of carbon nanotubes implantation on electrical properties of sisal fibre–epoxy composites

In this paper, the effects of carbon nanotubes (CNT) implantation and sisal fibre size on the electrical properties of sisal fibre-reinforced epoxy composites are reported. For this purpose, the epoxy composites reinforced with CNT-implanted sisal fibre of 5 mm and 10 mm lengths were prepared by hand moulding and samples characterized for their electrical properties, such as dielectric constant (ε′), dielectric dissipation factor (tan δ) and AC conductivity (σ_ac) at different temperatures and frequencies. It was observed that the dielectric constant increases with increase in temperature and decreases with increase in frequency from 500 Hz to 5 KHz. Interestingly, the sample having CNT-implanted sisal fibre of 5 mm length exhibited the highest value of dielectric constant than the one with length 10 mm. This is attributed to the increased surface area of sisal fibre and enhancement of the interfacial polarization. At a constant volume and a length of 5 mm of the fibres, the number of interfaces per unit volume element is high and results in a higher interfacial polarization. The interfaces decrease as the fibre length increases, and therefore, the value of ε′ decreases at 10 mm fibre length. The peak value of the dielectric constant decreases with increasing frequency. A continuous decrease in dissipation factor (tan δ) with increasing frequency for all samples was observed, while at lower temperatures, the values of tan δ remains approximately same. The AC conductivity for 5 mm length sisal epoxy composite and 10 mm length sisal fibre–epoxy composites is higher than that of pure epoxy at all the frequencies.     

Effect of Cu doping on the magnetic and electrical properties of n=2 Ruddlesden-Popper manganates

A series of polycrystalline Cu-doped n=2 Ruddlesden-Popper manganates La1.2Sr1.8CuzMn（2-x）O7 （x=0, 0.04, 0.13） were synthesized by the solid state reaction method. The effect of Cu doping on the magnetic and transport properties has been studied. It is found that Cu substitution for Mn greatly affects the magnetic and electrical properties of the parent phase La1.2Sr1.8Mn2O7. With the increase of Cu content, the system undergoes a transition from longrange ferromagnetic order to the spin glass state and further to an antiferromagnetic order. A little of Cu dopant can lead to the samples showing semiconductor or insulator behaviour in the whole observed temperature range while the parent phase has a metal-insulator transition. These samples show colossal magnetoresistance at low temperatures and the value of it decreases with increasing Cu content.     

Dielectric properties of Bi4Ti3O12–SrBi4Ti4O15 intergrowth ceramics synthesized by a modified oxalate route

In this study, Bi₄Ti₃O₁₂–SrBi₄Ti₄O₁₅ (BIT–SBTi) intergrowth ferroelectric ceramics was synthesized by a modified oxalate route. The phase formation behaviour, structure, morphology and electrical properties of the intergrowth ceramics were also investigated. The phase formation takes place through intermediate phases like SrBi₂O₄ and Bi₁₂TiO₂₀. The precursor mostly changes to Bi₄Ti₃O₁₂ at 600°C and to BIT–SBTi intergrowth at 800°C. Rietveld analysis of the X-ray diffraction pattern showed that the structure of the intergrowth compound was orthorhombic with lattice parameters a = 5.4408(3), b = 5.4505(1) and c = 74.0851(4) Å. The intergrowth ferroelectrics showed a phase transition at 610°C and a frequency-stable permittivity and dielectric loss behaviour. The intergrowth ferroelectrics also showed a larger 2P_r than their constituents BIT and SBTi.     

Effect of annealing temperature on the electrical properties of Au/Ta2O5/n-GaN metal–insulator–semiconductor (MIS) structure

We report on the effect of an annealing temperature on the electrical properties of Au/Ta₂O₅/n-GaN metal–insulator–semiconductor (MIS) structure by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The measured Schottky barrier height (Φ _bo) and ideality factor n values of the as-deposited Au/Ta₂O₅/n-GaN MIS structure are 0.93 eV (I–V) and 1.19. The barrier height (BH) increases to 1.03 eV and ideality factor decreases to 1.13 upon annealing at 500 ^°C for 1 min under nitrogen ambient. When the contact is annealed at 600 ^°C, the barrier height decreases and the ideality factor increases to 0.99 eV and 1.15. The barrier heights obtained from the C–V measurements are higher than those obtained from I–V measurements, and this indicates the existence of spatial inhomogeneity at the interface. Cheung’s functions are also used to calculate the barrier height (Φ _bo), ideality factor (n), and series resistance (R _s ) of the Au/Ta₂O₅/n-GaN MIS structure. Investigations reveal that the Schottky emission is the dominant mechanism and the Poole–Frenkel emission occurs only in the high voltage region. The energy distribution of interface states is determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height. It is observed that the density value of interface states for the annealed samples with interfacial layer is lower than that of the density value of interface states of the as-deposited sample.     

Effects of La–Zn substitution on microstructure and magnetic properties of strontium ferrite nanofibers

Sr_1−x La _x Zn _x Fe_12−x O₁₉/poly(vinylpyrrolidone) (PVP) (0.0≤x≤0.5) precursor nanofibers were prepared by the sol–gel assisted electrospinning method from starting reagents of metal salts and PVP. Subsequently, the Sr_1−x La _x Zn _x Fe_12−x O₁₉ nanofibers with diameters of around 100 nm were obtained by calcination of the precursor at 800 to 1000°C for 2 h. The precursor and resultant Sr_1−x La _x Zn _x Fe_12−x O₁₉ nanofibers were characterized by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectrometer and vibrating sample magnetometer. The grain sizes of Sr_0.8La_0.2Zn_0.2Fe_11.8O₁₉ nanofibers are in a nanoscale from 40 to 48 nm corresponding to the calcination temperature from 800 to 1000°C. With La–Zn substitution content increase from 0 to 0.5, the grain size and lattice constants for the Sr_1−x La _x Zn _x Fe_12−x O₁₉ nanofibers obtained at 900°C show a steady reduction trend. With variations of the ferrite particle size arising from the La–Zn substitution, the nanofiber morphology changes from the necklace-like structure linking by single elongated plate-like particles to the structure building of multi-particles on the nanofiber cross-section. The specific saturation magnetization of Sr_1−x La _x Zn _x Fe_12−x O₁₉ nanofibers initially increases with the La–Zn content, reaching a maximum value 72 A m² kg⁻¹ at x=0.2, and then decreases with a further La–Zn content increase up to x=0.5, while the coercivity exhibits a continuous reduction from 413 (x=0) to 219 kA m⁻¹ (x=0.5). The mechanism for the La–Zn substitution and the nanofiber magnetic property are analyzed.     

Effect of Cr substitution on the superconducting and magnetic properties of RuSr2Eu1.5Ce0.5Cu2O10−δ

In this paper we investigate the properties of polycrystalline series of Ru_1?xCr_xSr₂Eu_1.5Ce_0.5Cu₂O_10?δ (0.0 ? x ? 0.40) by resistivity, XRD and dc magnetization measurements. EuRu-1222 is a reported magneto superconductor with Ru spins magnetic ordering at temperatures near 100 K and superconductivity occurs in Cu–O₂ planes below T_c ? 40 K. The exact nature of Ru spins magnetic ordering is still being debated and no conclusion has been reached yet. In this work, we found the superconducting transition temperature T_c = 20 K from resistivity and dc magnetization measurements for pristine sample. DC magnetization measurements exhibited ferromagnetic like transition for all samples.