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1.
Localized physical and chemical reactions induced by focused ion and electron beams, i.e. dual beams, have been used to fabricate field emitters (FEs) and their arrays, field-emitter arrays (FEAs), without masking and annealing processes. Issues arising from beam processing such as beam-induced damage and contamination were eliminated to provide FEAs with low leakage current. Quick prototyping and repairing processes of FEs and FEAs using dual-beam processing have been demonstrated. Nb- or Au-gated Pt FEAs have been fabricated using dual beams. The fabricated FEAs showed a turn-on voltage of 40 V for field emission with a typical emission current of about 1 μA/tip. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +81-6/6850-6662, E-mail: takai@rcem.osaka-u.ac.jp  相似文献   

2.
Pulsed thermoelectrically cooled QC-DFB lasers operating at 15.6 μm were characterized for spectroscopic gas sensing applications. A new method for wavelength scanning based on repetition rate modulation was developed. A non-wavelength-selective pyroelectric detector was incorporated in the sensor configuration giving the advantage of room-temperature operation and low cost. Absorption lines of CO2 and H2O were observed in ambient air, providing information about the concentration of these species. Received: 29 April 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-713/348-5686, E-mail: akoster@rice.edu  相似文献   

3.
Pb(Zr,Ti)O3 (PZT) ferroelectric thin film was prepared by the sol-gel technique and crystallized with a (111) preferred orientation. The domain structure and polarization reversal behavior were investigated by using scanning force microscopy (SFM) piezoresponse mode at the nanometer scale. A step structure of approximately 30 nm in width was directly observed, which was formed during the polarization reversal process. The presence of the step structure reveals that the forward domain-growth mechanism is the dominant domain-switching process in our PZT thin films. Received: 6 August 2002 / Accepted: 9 August 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +86-21/5241-3122, E-mail: huarongzeng@163.net  相似文献   

4.
The characterizations of a so-called ‘mild’ PbTe layer thermal-evaporated from an excess of Te (<1 mol.%) evaporable materials are reported. The results reveal that the film obtained is polycrystalline and has a single-phase NaCl-type PbTe crystal structure. It is also demonstrated that the film has a homogeneous surface morphology and a high degree of homogeneous distribution of Te-rich components along the layer. The study of mid-infrared optical constants of a surface-polished film indicates that the influence of surface scattering on optical properties is very small. Received: 3 July 2002 / Accepted: 7 August 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-21/6516-9946, E-mail: lbincome@yahoo.com  相似文献   

5.
In this article, we describe an experimental system for generating Bose–Einstein condensates and controlling the shape and motion of a condensate by using miniaturised magnetic potentials. In particular, we describe the magnetic trap setup, the vacuum system, the use of dispenser sources for loading a high number of atoms into the magneto-optical trap, the magnetic transfer of atoms into the microtrap, and the experimental cycle for generating Bose–Einstein condensates. We present first results on outcoupling of condensates into a magnetic waveguide and discuss influences of the trap surface on the ultra-cold ensembles. Received: 21 August 2002 / Revised version: 10 December 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-7071/295-829, E-mail: fortagh@pit.uni-tuebingen.de  相似文献   

6.
Nanoscale effects in focused ion beam processing   总被引:3,自引:0,他引:3  
Focused ion beams with diameters of 8 to 50 nm are used for material processing in the nanoscale regime. In this paper, effects of the ion beam–solid interaction determining the formation of small structures by ion-beam sputtering and chemically assisted material deposition and etching are investigated. In the case of decreasing feature size, angle-dependent sputtering, a non-constant sputter rate, and scattered ions play an important role. The impact on side-wall angle, aspect ratio, and shape of the bottom of the etched structures is discussed. In beam tail regions, these effects will be especially pronounced, leading to material swelling instead of material removal. Ion beam assisted etching and deposition will face additional effects. For small structures, gas depletion becomes a significant drawback. The impact on gas depletion and the competition with sputtering are discussed. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-9131/761360, E-mail: frey@iis-b.fhg.de  相似文献   

7.
We show the very particular behavior of focused-ion-beam etching in macroporous silicon. We demonstrate that, contrary to bulk samples, a porous substrate allows extremely high-aspect-ratio patterns to be etched at submicrometer scales. Thanks to the pre-introduced porosity, the secondary effects that limit the pattern depth in bulk-sample etching, namely the sputtered material redeposition as well as the beam ‘self-focusing’ effects, are strongly reduced in a porous sample. In this case the walls between the pores are sputtered in an almost independent way. The etching of deep and straight patterns is feasible. Combined with photoelectrochemical etching that generates the initial macropores, three-dimensional (3D) lattices can be obtained, as demonstrated by 3D photonic crystal fabrication. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +33-1/6915-6086, E-mail: wang@lps.u-psud.fr  相似文献   

8.
Extended defects are often found after ion implantation and annealing of silicon and they are known to affect dopant diffusion. The article reviews the structure and energetics of the most often found extended defects and describes the mechanisms by which all these defects grow in size and transform during annealing. Defects grow by interchanging the Si atoms they are composed of and thus maintain large supersaturations of free Si interstitials in the region. A model has been developped to describe such an evolution in presence of a free surface. It is shown that after low energy implantation, the surface of the wafer may recombine large amounts of these free Si interstitials, driving defects into dissolution before transformation into more stable forms. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +33-56/2257-999, E-mail: claverie@cemes.fr  相似文献   

9.
A handheld, battery-powered tunable-diode-laser sensor platform is described. The sensor is based on frequency modulation (FM) spectroscopy using near-IR diode lasers and passive topographic backscatter from common environmental targets such as buildings, ground and foliage. A specific application to the detection of methane using a 1.65-micron diode laser is described in detail, showing a detection sensitivity sufficient to identify typical leaks from buried residential natural gas service lines at stand-off distances up to 30 m. Signal and noise sources are analyzed in detail, along with laboratory and field-test data, including known service leaks. Received: 15 April 2002 / Revised version: 4 June 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-978/689-3232, E-mail: allen@psicorp.com  相似文献   

10.
The progress in the development of a sensor for the detection of trace air constituents to monitor spacecraft air quality is reported. A continuous-wave (cw), external-cavity tunable diode laser centered at 1.55 μm is used to pump an optical cavity absorption cell in cw-cavity ringdown spectroscopy (cw-CRDS). Preliminary results are presented that demonstrate the sensitivity, selectivity and reproducibility of this method. Detection limits of 2.0 ppm for CO, 2.5 ppm for CO2, 1.8 ppm for H2O, 19.4 ppb for NH3, 7.9 ppb for HCN and 4.0 ppb for C2H2 are calculated. Received: 3 April 2002 / Revised version: 3 June 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-202/994-5873, E-mail: Houston@gwu.edu  相似文献   

11.
A simple technique is demonstrated for the accurate determination of pressure-induced line shifts of water in air. High- and low-pressure water samples are simultaneously probed on selected overtone transitions at 1.32 μm using a current-modulated distributed-feedback diode laser and harmonic detection. The resultant profiles yield an average line shift of -293±30 MHz/atm for the 3,3,0 (002)2,2,1 (000)transition at 227251 GHz and -134±7 MHz/atm for the 3,2,1 (002)2,1,2 (000) transition at 227027 GHz. Comparisons are made between first- and second-harmonic detection, and wavelength- and frequency-modulation regimes. The effect of modulation broadening on the returned line shifts is quantified. Received: 12 August 2002 / Revised version: 21 October 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +44-01865/275410, E-mail: gus.hancock@chemistry.ox.ac.uk  相似文献   

12.
The goal of the present paper was to develop an experimental technique to detect trace concentrations of complex molecules in the atmosphere using near-IR diode lasers. Ethanol and propane were chosen as model species. New optical, hardware, instrument-operation-mode and data-processing approaches for detection of trace complex molecules were developed. Different physical processes limiting the sensitivity of trace molecule detection were considered and solutions were developed to reduce the influence of these mechanisms on instrument operation. An absorption sensitivity of αmin=2.5×10-5 for 4.5 ms measurement time was achieved, which is comparable with the sensitivity of “small” molecule detection. The first results utilizing this technique for in-field monitoring of trace complex molecules are presented. Received: 25 April 2002 / Revised version: 29 May 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +7-095/135-8281, E-mail: anber@nsc.gpi.ru  相似文献   

13.
We report the spectroscopic detection of formaldehyde in ambient air using cavity leak-out spectroscopy, a cw variant of cavity ring-down spectroscopy. This technique proved to be suitable for a real-time quantitative analysis of polluted air without any preprocessing of the air sample. Using a tunable CO-overtone sideband laser for the λ=3 μm spectral region and a ring-down cell with R=99.95% mirrors, we achieved a detection limit of 2 parts per billion formaldehyde in ambient air, corresponding to a minimum detectable absorption coefficient of 7×10-9/cm (sampling time: 2 s). Calibration problems arising from the polarity of the molecule and due to HITRAN database uncertainties are discussed. Received: 28 March 2002 / Revised version: 7 June 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +49-211/811-3121, E-mail: muertz@uni-duesseldorf.de  相似文献   

14.
A portable modular gas sensor for measuring the 13C/12C isotopic ratio in CO2 with a precision of 0.8‰(±1σ) was developed for volcanic gas emission studies. This sensor employed a difference frequency generation (DFG)-based spectroscopic source operating at 4.35 μm (∼2300 cm-1) in combination with a dual-chamber gas absorption cell. Direct absorption spectroscopy using this specially designed cell permitted rapid comparisons of isotopic ratios of a gas sample and a reference standard for appropriately selected CO2 absorption lines. Special attention was given to minimizing undesirable precision degrading effects, in particular temperature and pressure fluctuations. Received: 16 April 2002 / Revised version: 28 May 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-713/5245237, E-mail: fkt@rice.edu  相似文献   

15.
We express the commutation relation between the operators of the momentum and the radial unit vectors in D dimensions in differential and integral form. We connect this commutator with the quantum fictitious potential emerging in the radial Schr?dinger equation of an s-wave. Received: 6 August 2002 / Revised version: 30 October 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-731/502-3086, E-mail: markus.cirone@physik.uni-ulm.de  相似文献   

16.
We show that a femtosecond laser enables us to produce true three-dimensional (3-D) microstructures embedded in a photosensitive glass, which has superior properties of transparency, hardness and chemical and thermal resistances. The photosensitivity arises from the cerium in the glass. After exposure to a focused laser beam, latent images are written. Modified regions are developed by a post-baking process and then preferentially etched away in a 10% dilute solution of hydrofluoric acid at room temperature. We have measured the critical dose for modification of the photosensitive glass, and fabricated 3-D microstructures with microcells and hollow microchannels embedded in the glass based on the critical dose. Received: 12 August 2002 / Accepted: 13 August 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +81-48/468-4682, E-mail: mmasudaw@postman.riken.go.jp  相似文献   

17.
An industrial trace-ammonia sensor based on photoacoustic spectroscopy and CO2 lasers has been developed for measuring ammonia with a 1σ detection limit of 220 parts-per-trillion (ppt) in an integration time of 30 s. The instrument response time for measuring ammonia was 200 s, limited by adsorption effects due to the polar nature of ammonia. The minimum detectable fractional absorbance was 2.0×10-7, and the minimum normalized detectable absorption coefficient for this system was 2.4×10-7 W cm-1/z. The 9R(30) transition of the CO2 laser at 9.22 μm with 2 W of output power was used to probe the strong sR(5,K) multiplet of ammonia at the same wavelength. This sensor was demonstrated with an optically multiplexed configuration for simultaneous measurement in four cells. Received: 3 April 2002 / Revised version: 31 May 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-310/458-0171, E-mail: webber@pranalytica.com  相似文献   

18.
Ti:sapphire femtosecond laser pulse filamentation in competition with optical breakdown in condensed matter is studied both experimentally and numerically using water as an example. Strong random deflection and modulation of the supercontinuum under tight focusing conditions were observed. They manifest the beginning of the filamentation process near the highly disordered plasma created by optical breakdown at the geometrical focus. Received: 13 June 2002 / Revised version: 16 August 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +1-418/656-2623, E-mail: wliu@phy.ulaval.ca  相似文献   

19.
Group-IV nanocluster formation by ion-beam synthesis   总被引:1,自引:0,他引:1  
A short review of our investigations devoted to the use of ion-beam-synthesized nanoclusters for silicon-based light emission and nonvolatile memory effects is presented. Blue-violet light emission is demonstrated based on Ge-implanted silicon dioxide layers thermally grown on silicon substrates. This version of silicon-based light emission relies on Ge-related defects in the amorphous ≡Si–O–Si≡ network. The photoluminescence and electroluminescence are excited by a singlet S0–S1 transition of a neutral oxygen vacancy and by electron injection from the silicon substrate into the silicon dioxide layer, respectively. Whereas the photoluminescence excitation is a well-known mechanism, for the case of electroluminescence an interpretation was performed for the first time in the course of our studies. It was found that the most probable way to excite luminescence centers is the impact excitation by hot electrons. Whereas the injection is explained by trap-assisted tunneling of electrons from the substrate into the oxide, the electrons will be transported via traps or in the SiO2 conduction band. The application of the silicon-based light-emitting devices for an integrated optocoupler arrangement is described. Another application of nanoclusters is based on the investigation of thin Si-implanted silicon dioxide layers for nonvolatile memory devices. First promising results demonstrate that the observed programming window can reach several volts and the devices exhibit excellent retention behavior. A 256 K-nv-SRAM is demonstrated showing a programming window of >1 V for write pulses of 12 V/8 ms. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-351/260-3411, E-mail: w.skorupa@fz-rossendorf.de  相似文献   

20.
We report the observation of light filaments produced by a picosecond laser pulse in the visible. The pulse trapped in the filamentary mode experiences large-scale self-phase modulation, with almost 100-fold spectral broadening along with apparent shortening of the leading edge. Spatial-temporal properties of the light filament reveal rather complex propagation dynamics. Received: 7 August 2002 / Revised version: 12 September 2002 / Published online: 11 December 2002 RID="*" ID="*"Corresponding author. Fax: +370-2/3660-06, E-mail: audrius.dubietis@ff.vu.lt  相似文献   

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