质子交换膜燃料电池催化层化学稳定性研究

本文采用 Fenton 试剂离线加速衰减测试考察质子交换膜燃料电池（PEMFC）催化层的化学稳定性. 在经100 h Fenton 试剂处理后,氟离子流失测试和傅里叶红外光谱表征（ATR-FTIR）证明催化层中全氟磺酸离聚物（Nafion）发生了化学降解;通过透射电镜（TEM）观察到催化层中发生了明显的 Pt 颗粒团聚和炭载体腐蚀,与TEM表征相一致,循环伏安测试（CV）表明电化学活性面积（ECSA）降低了58%,并伴随着双电层区域的明显减少;FTIR测试进一步表征了炭载体的表面状态,并没有观察到明显的含氧官能团的产生,减少的炭载体可能以CO₂的形式释放出去. 全电池测试表明,自由基攻击对催化层组成和结构造成了明显损坏,显著增加了催化层中的质子传导阻力和局部气体传输阻力,导致全电池性能大幅降低.     

超晶格多层膜的电化学制备、表征及其GMR特性的研究

以半导体Si为衬底,电化学沉积Cu/Co超晶格多层膜,用SEM表征多层膜的断面形貌.XRD研究表明,多层膜的调制波长为20～160 nm时,膜层间发生外延生长.随着调制波长的减小,外延生长对膜层结构的影响越来越明显.当调制波长小于20 nm时,在XRD强衍射峰的两侧出现卫星峰,表明多层膜形成超晶格结构.根据卫星峰位置计算的调制波长与由法拉第定律估算的结果非常接近.多层膜的巨磁电阻(GMR)性能随多层膜周期数的增加而增大;当周期数大于300时,GMR性能基本上不再随周期数变化,说明基体的导电性质对GMR的影响可以忽略.     

片状多层结构卤化银外延乳剂的光物理性质及感光性能的研究

本文利用可控双注仪设计并制备了三种系列共二十种片状多层结构溴碘化银乳剂及其外延体。用X射线能谱仪(EDS)和电镜验证所设计的碘离子多层分布和氯化银外延体的位置,研究了它们的光物理性质和感光性能,发现外延AgCl对主体微晶性质的影响随层次结构和外延位置不同有很大的变化。若主体微晶结构合理,光电子利用效率已经较高,电子与空穴分离好,外延后其乳剂的感光度提高幅度反而不大。相反,若主体微晶的结构不合理,则外延可能导致两种结果:或增加潜影形成效率,提高感光度;或造成潜影分散,降低感光度。     

电极界面缓冲层对P3HT:PC61BM太阳能电池热稳定性的影响

基于溶液法加工制备的聚合物太阳能电池的高温热稳定性是决定器件能否兼容后续高温热封装工艺, 如热压封装、高温原子层沉积(ALD)等的一个关键. 本文分别利用聚(3, 4-乙烯二氧噻吩)-聚苯乙烯磺酸(PEDOT:PSS)和MoO₃作为阳极缓冲层, 以及ZnO和LiF 作为阴极缓冲层, 制备了结构为氧化铟锡(ITO)/阳极缓冲层/3-己基取代聚噻吩:(6, 6)-苯基C₆₁-丁酸甲酯(P3HT:PC₆₁BM)/阴极缓冲层/Al 的太阳能电池, 系统地比较研究了不同界面缓冲材料对器件光电转换性能及稳定性的影响, 特别是在高温煺火条件下器件的性能稳定性差异. 结果表明, 聚合物太阳能电池的热稳定性同器件的结构以及所用的缓冲层材料有密切的相关性. 其中, 利用MoO₃及ZnO分别作为阳极与阴极界面修饰层的P3HT:PC₆₁BM器件在120-150 ℃的温度范围内能够较好地保持器件的光电转换性能. 这一结果为后续需要高温封装工艺的器件提供了有意义的结构优化指导. 此外, 研究结果还表明利用ZnO作为阴极缓冲层能够改善器件的长时间稳定性.     

具有SiC缓冲层的Si衬底上直接沉积碳原子生长石墨烯

石墨烯是近年发现的一种新型多功能材料.在合适的衬底上制备石墨烯成为目前材料制备的一大挑战.本文利用分子束外延(MBE)设备,在Si 衬底上生长高质量的SiC 缓冲层,然后利用直接沉积C原子的方法生长石墨烯,并通过反射式高能电子衍射(RHEED)、拉曼(Raman)光谱和近边X 射线吸收精细结构谱(NEXAFS)等实验技术对不同衬底温度(800、900、1000、1100 °C)生长的薄膜进行结构表征.实验结果表明,在以上衬底温度下都能生长出具有乱层堆垛结构的石墨烯薄膜.当衬底温度升高时,碳原子的活性增强,其成键的能力也增大,从而使形成的石墨烯结晶质量提高.衬底温度为1000 °C时结晶质量最好.其原因可能是当衬底温度较低时,碳原子活性太低不足以形成有序的六方C-sp2环.但过高的衬底温度会使SiC 缓冲层的孔洞缺陷增加,衬底的Si 原子有可能获得足够的能量穿过SiC薄膜的孔洞扩散到衬底表面,与沉积的碳原子反应生成无序的SiC,这一方面会减弱石墨烯的生长,另一方面也会使石墨烯的结晶质量变差.     

粘土层间距对粘土/环氧树脂插层复合材料热机械性能的影响

研究了混料温度对蒙脱土／环氧树脂复合材料相关性能的影响。用X射线衍射表征了复合材料的层间距，并且在动态热机械分析仪（DMTA）上用不同的模式表征了不同层间距的插层复合材料的性能。测试结果表明，混料温度对蒙脱土／环氧树脂插层复合材料的热机械性能有一定的影响。插层后蒙脱土／环氧树脂的软化温度提高了11℃，弹性模量也有相应的提高。     

双槽法电沉积Cu/Ni多层纳米线有序阵列

以多孔阳极氧化铝（AAO）为模板，采用双槽法电沉积工艺制得高度有序的Cu/Ni多层纳米线阵列。利用扫描电镜（SEM）和透射电镜（TEM）对Cu/Ni多层纳米线进行了表征，观察到纳米线表面平滑，多层结构清晰，各子层厚度均匀，直径约为 100 nm，与AAO模板孔径基本一致。由选区电子衍射（SAED）照片可知，多层纳米线中Cu层和Ni层均为单晶结构。振动样品磁强计（VSM）测试结果表明，Cu/Ni多层纳米线阵列具有明显的垂直磁各向异性，外加磁场垂直和平行于AAO模板表面时，磁滞回线的矩形比分别为 0.701 和 0.101 ，矫顽力分别为 589 Oe和 202 Oe。通过控制铝阳极氧化工艺及电沉积时间，可获得不同直径、不同子层厚度的Cu/Ni多层纳米线阵列。     

YBCO涂层导体CeO2,Y2O3缓冲层的生长研究

采用反应溅射的方法在具有立方织构的Ni基底上制备了CeO2,Y2O3缓冲层.Ar/H2气氛下预沉积的引入,有效地抑制了基底的氧化.同时,为保证薄膜的外延取向,预沉积时间必须和总沉积时间满足线性关系.对比CeO2,Y2O3的生长条件,发现CeO2的外延生长区间比Y2O3宽,Y2O3的生长对温度、气压等条件更为敏感.最终制备的CeO2缓冲层是纯的(100)取向,其平面内φ扫描半高宽(FWHM)为8.5°;而Y2O3存在两种平面取向,一种是Y2O3(110)‖Ni(100),另一种是Y2O3(100)‖ Ni(100).俄歇能谱观察表明,CeO2/Ni界面优于Y2O3/Ni界面.扫描电镜照片显示,CeO2,Y2O3缓冲层的表面均匀致密,无裂纹生成,但两种薄膜中,都有呈三角形的胞状突起.     

改善有机光伏器件性能的新型缓冲层

通过热蒸发在ITO阳极和聚3,4-乙撑二氧噻吩:聚苯乙烯磺酸(PEDOT:PSS)层之间引入一层聚四氟乙烯（PTFE）缓冲层,研究聚四氟乙烯缓冲层对基于聚3-己基噻吩:6,6-苯基-C61丁酸甲酯(P3HT:PCBM)的有机光伏器件光电特性影响。与使用PEDOT:PSS作为缓冲层的器件相比,使用聚四氟乙烯缓冲层的有机光伏器件开路电压、短路电流和光电转换效率均有所提高。器件光电性能提高的原因是由于PTFE缓冲层大量带负电荷的氟离子在ITO/PTFE界面处形成偶极子层, 改善了内建电场,从而使得空穴电荷的收集更加有利。     

纳米金属多层膜与多层纳米线的电化学制备及其表征

分别采用单槽法和双槽法电沉积Cu/Co多层膜.研究了两种电沉积方法制备多层膜的工艺条件,利用电化学方法、XRD和SEM对多层膜进行表征,并对Cu/Co多层膜的巨磁阻性能进行了测试. 采用电沉积多层膜的方法，以多孔铝阳极氧化膜（AAO）为模板,在纳米孔内沉积Cu/Co多层线,采用TEM对多层纳米线进行了表征.     

Epitaxial superconducting δ-MoN films grown by a chemical solution method

The synthesis of pure δ-MoN with desired superconducting properties usually requires extreme conditions, such as high temperature and high pressure, which hinders its fundamental studies and applications. Herein, by using a chemical solution method, epitaxial δ-MoN thin films have been grown on c-cut Al(2)O(3) substrates at a temperature lower than 900 °C and an ambient pressure. The films are phase pure and show a T(c) of 13.0 K with a sharp transition. In addition, the films show a high critical field and excellent current carrying capabilities, which further prove the superior quality of these chemically prepared epitaxial thin films.     

电子功能外延薄膜的电沉积

电沉积作为一种在温和条件下从溶液中合成材料的技术已被广泛应用于在导体和半导体基底表面合成各种功能材料。电沉积一般由人为施加于基底的电刺激（如：施加电位/电流）来触发。这种电刺激通过氧化或还原靠近基底表面的溶液层内部的离子、 分子或配合物从而使该溶液层偏离其热力学平衡状态,随后引起目标产物在基底表面的沉积。在电沉积过程中, 许多实验参数都可能从不同的方面对沉积物的物化性质造成影响。迄今为止,已通过电沉积制备出多种单质（包括金属和非金属单质）、 化合物（例如：金属氧化物、金属氢氧化物、 金属硫化物等）以及复合材料。电沉积制备的这些材料大多为多晶、 织构或外延薄膜的形式。其中, 外延薄膜是一种具有特定的面外和面内晶体生长取向且其晶体取向受基底控制的类单晶薄膜。由于外延薄膜中高度有序的原子排列,它们常呈现出独特的电磁性质。本文总结了常见的电沉积合成路线及影响沉积物外延生长的关键实验因素。此外, 本文简要介绍了用于表征外延薄膜的技术。最后, 本文还讨论了一些采用电沉积制备的具有特殊电子、 电磁及光电特性的功能外延薄膜。     

Aqueous Chemical Solution Deposition of Functional Double Perovskite Epitaxial Thin Films

Double perovskite structure (A₂BB′O₆) oxides exhibit a breadth of multifunctional properties with a huge potential range of applications in fields as diverse as spintronics, magneto-optic devices, or catalysis, and most of these applications require the use of thin films and heterostructures. Chemical solution deposition techniques are appearing as a very promising methodology to achieve epitaxial oxide thin films combining high performance with high throughput and low cost. In addition, the physical properties of these materials are strongly dependent on the ordered arrangement of cations in the double perovskite structure. Thus, promoting spontaneous cationic ordering has become a relevant issue. In this work, our recent achievements by using polymer-assisted deposition (PAD) of environmentally friendly, water-based solutions for the growth of epitaxial ferromagnetic insulating double perovskite La₂CoMnO₆ and La₂NiMnO₆ thin films on SrTiO₃ and LaAlO₃ single-crystal substrates are presented. It is shown that the particular crystallization and growth process conditions of PAD (very slow rate, close to thermodynamic equilibrium conditions) promote high crystallinity and quality of the films, as well as favors spontaneous B-site cationic ordering.     

GaN基异质外延膜中Al组分含量测试方法综述

介绍了目前可用于AlGaN半导体异质外延膜中Al组分含量测定的多种测试技术,包括高分辨X射线衍射技术、光致发光法、紫外-可见光透射光谱法、电子探针法、卢瑟福背散射法等,并对各种测试技术的原理和优缺点进行了概述。     

Electronic Structure and Crystalline Coherence in Fe/Si Multilayers

Soft x-ray fluorescence spectroscopy has been used to examine the electronic structure of deeply buried silicide thin films that arise in Fe/Si multilayers. These systems exhibit antiferromagnetic (AF) coupling of the Fe layers, despite their lack of a noble metal spacer layer found in most GMR materials. Also, the degree of coupling is very dependent on preparation conditions, especially spacer layer thickness and growth temperature. The valence band spectra are quite different for films with different spacerlayer thickness yet are very similar for films grown at different growth temperatures. The latter result is surprising since AF coupling is strongly dependent on growth temperature. Combining near-edge x-ray absorption with the fluorescence data demonstrates that the local bonding structure in the silicide spacer layer in epitaxial films which exhibit AF coupling are metallic. These results indicate the equal roles of crystalline coherence and electronic structure in determining the magnetic properties of these systems.     

Effects of ZnO Buffer Layer Thickness on Properties of MgxZn1-xO Thin Films Deposited by MOCVD

High-quality MgxZn1-xO thin films were grown on sapphire（0001 ） substrates with a ZnO buffer layer of different thicknesses by means of metal-organic chemical vapor deposition. Diethyl zinc, bis-cyclopentadienyl-Mg and oxygen were used as the precursor materials. The crystalline quality, surface morphologies and optical properties of the Mg, Zn1-xO films were investigated by X-ray diffraction, atomic force microscopy and photoluminescence spectrometry. It was shown that the quality of the MgxZn1-xO thin films depends on the thickness of the ZnO buffer layer and an Mg, Zn1-xO thin film with a ZnO buffer layer whose thickness was 20 nm exhibited the best crystal-quality, optical properties and a flat and dense surface.     

Epitaxial oxide thin films by pulsed laser deposition: Retrospect and prospect

Pulsed laser deposition (PLD) is a unique method to obtain epitaxial multi-component oxide films. Highly stoichiometric, nearly single crystal-like materials in the form of films can be made by PLD. Oxides which are synthesized at high oxygen pressure can be made into films at low oxygen partial pressure. Epitaxial thin films of highT _c cuprates, metallic, ferroelectric, ferromagnetic, dielectric oxides, superconductor-metal-superconductor Josephson junctions and oxide superlattices have been made by PLD. In this article, an overview of preparation, characterization and properties of epitaxial oxide films and their applications are presented. Future prospects of the method for fabricating epitaxial films of transition metal nitrides, chalcogenides, carbides and borides are discussed.     

Growth modes of organic semiconductor thin films using organic molecular beam deposition: epitaxy,van der Waals epitaxy,and quasi-epirtaxy

We compare the ultrahigh vacuum growth of several different archetype organic molecular compounds on a variety of substrates, and find that the resulting thin films can form epitaxial, van der Waals epitaxial (vdWE) or quasi-epitaxial (QE) structures. Epitaxial and vdWE films form lattices commensurate with that of the substrate, where epitaxy refers to chemisorbed films while vdWE refers to purely vdW-bonded, physisorbed films. In contrast, QE films are incommensurate with the substrate lattice. In spite of this incommensurability, QE films can exhibit long range order, and have a unique orientational relationship with the substrate lattice. Quasi-epitaxial growth can result in strained structures, where the strain energy is relieved by variations in the internal lattice degrees of freedom. It has been found that QE growth can thus result in stable, quasi-equilibrium film structures which are different than the bulk structure of that same material. Organic thin films such as the phthalocyanines, 3,4,9,10-perylenetetracar☐ylic dianhydride, and the fullerenes grown on graphite, alkali halide crystals, Au, semiconductors and other substrates are all discussed.     

Well-defined micropatterns of polymers prepared by controlled crystallization process

Surface confined recrystallization of highly-oriented polyethylene (PE) thin films realized by carbon-coating was utilized to control the morphological structure of ultrathin PE films. Selective carbon-coating with the help of a mask and subsequent recrystallization of the pre-oriented PE thin film lead to a partially structural control of the PE thin film in the coated domains. A fully structural control of the PE film is then fulfilled through a combination of surface confinement and heteroepitaxy of PE on the oriented poly(tetrafluroethylene) (PTFE) thin film. The thus obtained structure can serve as a template to induce pattern structures of a variety of other polymers through epitaxial growth. The poly(ε-caprolactone) (PCL) and poly(butylenes adipate) (PBA) micropattern thin films are shown in this paper as examples. These thin films exhibit different birefringence in different regions depending on the molecular orientation and may find potential applications in the fields of polarization-dependent display or storage.     

Enhanced dielectric properties of LSCO-buffered Ba(Sn<Subscript>0.05</Subscript>Ti<Subscript>0.95</Subscript>)O<Subscript>3</Subscript> thin film prepared by sol–gel processing

Ferroelectric Ba(Sn_0.05Ti_0.95)O₃ (BTS) thin films were deposited onto Pt/Ti/SiO₂/Si substrates by sol–gel technique with a 100 nm thick LSCO buffer layer. The influence of buffer layer on the phase and microstructure of the thin films was examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current (DC) electric field. The results show that the LSCO buffer layer had a marked effect on the dielectric properties of the BTS films. The BTS thin films with LSCO buffer layer had enhanced dielectric properties.