空心微球/网络复合型碳泡沫材料制备与机理分析

在Klett等人于2000年制备的韧带网络型碳泡沫和Bruneten等人在2002年制备了一种空心微球碳泡沫材料结构的基础上,分别经过微观结构优化、碳化、石墨化处理,制备出了一种空心微球/网络复合型碳泡沫材料.扫描电镜和体视显微镜测试结果显示网络韧带和球形空腔呈现明显的空间周期性.X射线衍射(X-ray diffraction,XRD)图谱中,26°处的衍射峰表明该试样具有较高的石墨化特征.同时,对该材料的形成机理进行了分析. 关键词： 碳泡沫 微观结构优化 扫描电镜 X射线衍射     

拓扑材料γ-PtBi2的变温晶体结构研究

利用X射线衍射（XRD）、角分辨光电子能谱（ARPES）和能带计算的方法研究了不同温度下γ-PtBi₂的晶体结构。利用单晶XRD确定了室温下晶体的结构为P31m。为了确定低温时样品的晶体结构,用ARPES测得了样品的电子结构并与计算结果进行了对比,结果显示样品的结构与P31m相吻合,这表明在低温时样品依然保持P31m结构。进一步的高温XRD研究表明,在高温时样品的晶体结构仍为P31m结构。     

纯六方相氮化铝泡沫材料的合成

在15 mL的不锈钢反应釜中,利用无水三氯化铝与叠氮化钠在无溶剂的条件下直接反应,合成出了六方结构氮化铝泡沫材料,反应温度650 ℃,反应时间3 h.扫描电子显微镜测试结果显示,该试样呈现泡沫状外貌特征.X射线衍射结果表明该试样为六方结构.不同温度条件下的吸收谱表明在202 nm附近存在尖锐的吸收峰.红外吸收谱中存在1381 cm^-1和730 cm^-1两个吸收峰.同时,提出了六方结构氮化铝泡沫材料的合成机理. 关键词： 六方氮化铝泡沫材料 合成机理 X射线衍射     

Bi2Sr2CaCu2-xSnxO8+δ系列 超导体的XRD和XPS研究

实验研究了Bi₂Sr₂CaCu_2-xSn_xO_8+δ 的X射线衍射(XRD)和光电子能谱(XPS).实验发现随着掺杂(Sn)量的增加,晶格参数a 和c都有所变化,O1s和Cu2p芯能级谱也发生了变化.实验结果表明： 在低掺杂量时,Sn主要 呈二价态;而在高掺杂浓度时呈四价态;掺Sn对超导电性的影响与其他元素的掺杂不同.这 些实验结果支持化学环境在高温超导样品的电子结构中起着重要作用的结论. 关键词： Bi系超导体 掺杂 X射线衍射 光电子能谱     

Fe/ZnO (0001)体系界面相互作用中薄膜厚度效应的光电子能谱研究

利用同步辐射光电子能谱(SRPES)和X射线光电子能谱(XPS)技术,系统研究了室温下Fe/ZnO界面形成过程中Fe薄膜与氧结尾的ZnO(000 1 )衬底之间的相互作用,结果显示初始沉积的Fe明显被表面氧氧化为Fe²⁺离子,在Fe覆盖度为0—3 nm的范围内,分别观察到与界面电荷传输、化学反应以及薄膜磁性相关的三个有意义的临界厚度,这一结果将有助于基于Fe/ZnO界面的相关器件的设计和研发. 关键词： Fe/ZnO 界面作用 同步辐射光电子能谱 X射线光电子能谱     

Fe/ZnO (0001)体系界面相互作用中薄膜厚度效应的光电子能谱研究

利用同步辐射光电子能谱(SRPES)和X射线光电子能谱(XPS)技术,系统研究了室温下Fe/ZnO界面形成过程中Fe薄膜与氧结尾的ZnO(000 1 )衬底之间的相互作用,结果显示初始沉积的Fe明显被表面氧氧化为Fe²⁺离子,在Fe覆盖度为0—3 nm的范围内,分别观察到与界面电荷传输、化学反应以及薄膜磁性相关的三个有意义的临界厚度,这一结果将有助于基于Fe/ZnO界面的相关器件的设计和研发.     

沸石分子筛/泡沫铝复合吸附剂及其吸附制冷性能

本文提出了一种强化传热传质的沸石分子筛／泡沫铝复合吸附剂及其制备方法,用HotDisk热物性测量仪测量了其导热系数为2．89 W／mK。基于平衡吸附对其吸附制冷的性能进行了理论计算,并与沸石分子筛-水吸附制冷系统性能进行了比较。结果表明虽然由于金属铝的热容影响,使系统COP下降,但制冷功率有大幅提高。     

光谱法研究MC尼龙6/芳纶复合材料的结构

将经甲苯二异氰酸酯(TDI)和己内酰胺改性的Kevlar纤维作为MC尼龙6的增强体,X射线光电子能谱观察到改性后纤维表面C,N和O元素的含量发生了改变,谱峰也相应发生变化。从红外光谱分析发现,Kevlar纤维和MC尼龙6相混所得谱图只是二者红外谱图的简单叠加,而改性Kevlar纤维可作为己内酰胺阴离子开环聚合的活性中心,且接枝链上的酰胺基可以与基体尼龙形成较强的氢键,有利于提高界面结合。XRD测试表明Kevlar纤维的引入并没有明显改变MC尼龙6的晶型,但其晶粒将具有更严格的三维周期性结构。在相同纤维用量时,改性Kevlar纤维增强的MC尼龙6的晶粒较未改性纤维的完善。当纤维含量小于2%时,纤维的加入有利于生成完善的α球晶,纤维含量大于2%时,α球晶结构含量随着纤维用量的增多反而下降。     

C/ZrO2复合纳米粉体的快速制备及其机理研究

 采用激波等离子法制备了C/ZrO₂纳米复合粉体。通过X衍射、拉曼光谱对复合粉体的晶相组成进行了分析,利用透射电镜（TEM）对复合粉体的粒度、形貌进行了表征,借助热重分析对粉体的组成进行了检测,进一步对粉体的制备机理进行了探讨。结果表明：激波等离子体法可实现C/ZrO₂纳米复合粉体的快速制备,所制备出粉体的粒径在10 nm左右,复合粉体中碳为石墨相,约占总量的63%（质量分数）,氧化锆占总量的37%,主相为四方相。     

沸石分子筛/泡沫铝复合吸附材料-水非平衡吸附制冷特性分析

基于线性驱动力(LDF)非平衡吸附模型,计算了不同吸附层厚度、不同循环周期沸石分子筛/泡沫铝复合吸附剂-水的基本循环吸附制冷性能.结果表明非平衡吸附对于循环性能有很大影响.同时通过和沸石分子筛-水系统比较,由于复合吸附材料的强化传热作用,在循环周期较短时,具有更高的COP、单位吸附剂质量制冷功率以及单位吸附床质量制冷功率.     

Mechanical properties of Al/a-C nanocomposite thin films synthesized using a plasma focus device

The Al/a-C nanocomposite thin films are synthesized on Si substrates using a dense plasma focus device with alu- minum fitted anode and operating with CH4/Ar admixture. X-ray diffractometer results confirm the formation of metallic crystalline Al phases using different numbers of focus shots. Raman analyses show the formation of D and G peaks for all thin film samples, confirming the presence of a-C in the nanocomposite thin films. The formation of Al/a-C nanocomposite thin films is further confirmed using X-ray photoelectron spectroscopy analysis. The scanning electron microscope results show that the deposited thin films consist of nanoparticles and their agglomerates. The sizes of th agglomerates increase with increasing numbers of focus deposition shots. The nanoindentation results show the variations in hardness and elastic modulus values of nanocomposite thin film with increasing the number of focus shots. Maximum values of hardness and elastic modulus of the composite thin film prepared using 20 focus shots are found to be about 10.7 GPa and 189.2 GPa, respectively.     

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC

We have investigated the electron affinity of Si-doped AlN films(N_(Si)= 1.0 × 10~(18)–1.0 × 10_(19)cm~(-3)) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition(MOCVD) under low pressure on the ntype(001)6H–SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy(UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 e V for the 400-nm-thick one.Accompanying the x-ray photoelectron spectroscopy(XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.     

AlN/BN纳米结构多层膜微结构及力学性能

用射频磁控溅射法制备了AlN,BN单层膜及AlN/BN纳米多层膜.采用X射线衍射仪、高分辨率透射电子显微镜和纳米压痕仪对薄膜结构进行表征.分析表明：单层膜AlN为w-AlN结构,BN为非晶相.AlN/BN多层膜中BN的结构与BN层厚有关.当BN层厚小于0.55nm时,由于AlN层模板的作用,BN发生了外延生长,BN与AlN的结构相同;当BN层厚大于0.74nm时,BN为非晶.AlN/BN多层膜的硬度也与BN层的厚度有关.当BN层厚为1—2个分子层时,AlN/BN多层膜具有超硬效应;当BN层厚增加到0.74 关键词： AlN/BN多层膜 BN结构 超硬效应     

Effect of deposition temperature on the microstructure and surface morphology of c-axis oriented AlN films deposited on sapphire substrate by RF reactive magnetron sputtering

In this paper, c-axis oriented AlN films were prepared on sapphire substrate by RF reactive magnetron sputtering at various deposition temperatures (30–700 °C). The influences of deposition temperature on the chemical composition, crystalline structure and surface morphology of the AlN films were systematically investigated. The as-deposited films were characterized by X-ray photoelectron spectroscopy (XPS), two-dimensional X-ray diffraction (2D-XRD) and atomic force microscopy (AFM). The experimental results show that it can be successfully grown for high-purity and near-stoichiometric (Al/N = 1.12:1) AlN films except for the segregation of a few oxygen impurities exist in the form of Al–O bonding. The chemical composition of as-deposited films is almost independent of substrate temperature in the range of 30–700 °C. However, the crystalline structure and surface morphology of the deposited AlN films are strongly influenced by the deposition temperature. The optimum deposition temperature is 300 °C, giving a good compromise between crystalline structure and surface morphology to grow AlN films.     

Luminescence characterization and electron beam induced chemical changes on the surface of ZnAl2O4:Mn nanocrystalline phosphor

Luminescence characteristics and surface chemical changes of nanocrystalline Mn²⁺ doped ZnAl₂O₄ powder phosphors are presented. Stable green cathodoluminescence (CL) or photoluminescence (PL) with a maximum at ∼512 nm was observed when the powders were irradiated with a beam of high energy electrons or a monochromatic xenon lamp at room temperature. This green emission can be attributed to the ⁴T₁ → ⁶A₁ transitions of the Mn²⁺ ion. Deconvoluted CL spectra resulted in two additional emission peaks at 539 and 573 nm that may be attributed to vibronic sideband and Mn⁴⁺ emission, respectively. The luminescence decay of the Mn²⁺ 512 nm emission under 457 nm excitation is single exponential with a lifetime of 5.20 ± 0.11 ms. Chemical changes on the surface of the ZnAl₂O₄:Mn²⁺ phosphor during prolonged electron beam exposure were monitored using Auger electron spectroscopy. The X-ray photoelectron spectroscopy (XPS) was used to determine the chemical composition of the possible compounds formed on the surface as a result of the prolonged electron beam exposure. The XPS data suggest that the thermodynamically stable Al₂O₃ layer was formed on the surface and is possibly contributing to the CL stability of ZnAl₂O₄:Mn phosphor.     

Structure and mechanical properties of Al/AlN multilayer with different AlN layer thickness

Nanometer scale Al/AlN multilayers have been prepared by dc magnetron sputtering technique with a columnar target. A set of Al/AlN multilayers with the Al layer thickness of 2.9 nm and the AlN layer thickness variation from 1.13 to 6.81 nm were determined. Low angle X-ray diffraction (LAXRD) was used to analyze the layered structure of multilayers. The phase structure of the coatings was investigated with grazing angle XRD (GAXRD). Mechanical properties of these multilayers were thoroughly studied using a nanoindentation and ball-on-disk micro-tribometer. It was found that the multilayer hardness and reduced modulus showed no strong dependence on the AlN layer thickness. Al2.9 nm/AlN1.13 nm multilayer had more excellent tribological properties than single layers and other proportion multilayers with a lowest friction coefficient of 0.15. And the tribological properties of all the multilayers are superior to the AlN single layer.     

Regulating the magnetic anisotropy by Hf thickness and heat treatment in Pt/Co/Hf films

Pt/Co/Hf multilayers were prepared by magnetron sputtering, and the magnetic anisotropy was effectively regulated by Hf thickness and heat treatment in Pt/Co/Hf films. The interface microstructures were characterized. The influence of the interface microstructure on magnetic properties was studied. The results show that the magnetic anisotropy in Pt/Co/Hf films is closely related to the interface microstructure, which is influenced by Hf thickness and the heat treatment temperature. Microstructure analysis shows that after the Pt(3)/Co(1.5)/Hf(1) film is heat-treated, the CoO_x content increases, more CoPt(111) forms, the interface is smoother and sharper, and the roughness of the Co/Hf interface decreases. Several factors work together to cause the magnetic anisotropy of the sample to change from in-plane magnetic anisotropy (IMA)to perpendicular magnetic anisotropy (PMA).     

Structure evolution and mechanical properties enhancement of Al/AlN multilayer

A set of Al/AlN multilayers with various modulation periods were prepared using DC magnetron sputtering method. Low angle X-ray diffraction (LAXRD) was used to analyze the layered structure of multilayers. The phase structure of the films was investigated with grazing angle X-ray diffraction (GAXRD). LAXRD results indicate that well-defined multilayer modulation structures are formed for the relatively larger modulation periods. However, the loss of mutilayered structure is detected in the multilayer with low modulation period. A very wide amorphous peak is observed in multilayer with modulation period of 4 nm. The multilayers show obvious crystallization at larger modulation periods, however, the diffraction peaks are much wider than the Al single layer because of the interruption of the continuous columnar grain growth by alternating deposition processes. Nanoindentation experiments were performed to study the mechanical properties as a function of multilayer modulation period. It is found that the hardness of the multilayers is greater than the hardness calculated from rule of mixtures. With the modulation periods adjusted, the multilayers are even harder than its hard component (AlN). A maximum hardness of 24.9 GPa, about 1.9 times larger than its hard component (AlN) and 3.7 times larger than the hardness calculated from the rule of mixtures, is found at the multilayer with modulation period of 16 nm. The wear test results show that the multilayers possess lower and stable friction coefficient, and superior wear properties.     

HfO2顶层多层介质膜脉宽压缩光栅的Piranha溶液清洗

为了提高HfO2顶层多层介质膜脉宽压缩光栅(PCG)的抗激光损伤性能,使用Piranha溶液(浓硫酸和双氧水的混合液)清洗PCG去除其制作工艺和使用过程中残留在表面的污染物,包括CHF3作为工作气体对HfO2进行反应离子束刻蚀生成的碳氟化合物及金属氟化物.对Piranha溶液的清洗温度、组成成分、清洗时间、清洗遍数等参...     

Electronic structure of the PLD grown mixed phase MoS2/GaN interface and its thermal annealing effect

We report the electronic structure of Molybdenum disulfide (MoS₂) ultrathin 2D films grown by pulsed laser deposition (PLD) on top of GaN/c-Al₂O₃ (0001) substrates annealed up to 550 °C in an ultrahigh vacuum. Our X-ray photoemission spectroscopy (XPS) study shows that the grown films are mixed phase character with semiconducting 2H and metallic 1T phases. After ultrahigh vacuum (UHV) annealing, the 1T/2H phase ratio is significantly modified and film-substrate bonding becomes the leading factor influencing variation of mixed phase compositions. The semiconducting phase is partially transformed to metallic phase by thermal annealing; suggesting that the metallic phase observed here may indeed have more stability compared to the semiconducting phase. The notable enhancement of the 1T/2H ratio induces significant changes in Ga 3d core level spectra taken from bare GaN and MoS₂/GaN sample. The impact of S and/or Mo atoms on the Ga core level spectra is further pronounced with the thermal annealing of grown films. The analysis shows that an enhancement of 1T metallic phase with thermal annealing in MoS₂ layers is manifested by the occurrence of new spectral component in the Ga 3d core level spectra with the formation of Ga-S adlayer interaction through the Ga bonding in defect assisted GaN structure.