基于立方相MgZnO薄膜的高响应度深紫外探测器

在超过相变临界厚度的立方相Mg0.29Zn0.71O薄膜上制备了Au插指电极MSM结构探测器件,30 V偏压下的峰值响应度可达27.9 A/W(268 nm),对应的外量子效率为12900%。分析认为原位生长在立方相MgZnO薄膜上的极薄的结构相变层引入了高密度的界面态,在立方相薄膜表面电极接触中起到了降低势垒、减小耗尽层宽度、增强电极注入电子的能力的作用,使得器件形成高的光导增益。     

Au电极厚度对MgZnO紫外探测器性能的影响

利用分子束外延设备(MBE)制备了MgZnO薄膜.X射线衍射谱、紫外-可见透射光谱和X射线能谱表明薄膜具有单一六角相结构,吸收边为340 nm,Zn/Mg组分比为62:38.采用掩膜方法使用离子溅射设备,在MgZnO薄膜上制备了Au电极,并实现了Au-MgZnO-Au结构的紫外探测器.通过改变溅射时间,得到具有不同Au电极厚度的MgZnO紫外探测器.研究结果表明:随着Au电极厚度的增加,导电性先缓慢增加,再迅速增加,最后缓慢增加并趋于饱和;而Au电极的透光率则随厚度的增加呈线性下降.此外,随着Au电极厚度的增加,器件光响应度先逐渐增大,在Au电极厚度为28 nm时达到峰值,之后逐渐减小.     

CVD金刚石辐射探测器研制及性能测试

电学性质优异的金刚石膜是理想的辐射探测器材料,用自支撑金刚石膜研制了辐射探测器,进行了探测器的性能测试.探测器采用的是"叉指"状共面型电极结构,探测器的有效探测区面积为3mm×3mm,探测器的连接接口是L16电缆头.探测器暗电流与电压呈线性变化的关系,表明金属电极与金刚石基底之间是欧姆型电接触.当两电极之间的电场场强为30kV/cm时,探测器的暗电流仅约为0·1nA,探测器信号的上升时间为590ps,探测器的灵敏度约110mA/W,而且探测器有较好的剂量率线性特性.     

结构参数对GaN肖特基紫外探测器性能的影响及器件设计

研究了GaN肖特基结构(n^--GaN /n⁺-GaN)紫外探测器的结构参数对器件性能的影响机理。模拟计算结果表明:提高肖特基势垒高度和减小表面复合速率,不仅可以增加器件的量子效率,而且可以极大地减小器件的暗电流;适当地增加n^--GaN层厚度和载流子浓度可以提高器件的量子效率,但减小n^--GaN层的载流子浓度却有利于减小器件的暗电流。我们针对实际应用的需要,提出了一个优化器件结构参数的设计方案,特别是如果实际应用中对器件的量子效率和暗电流都有较高的要求,肖特基势垒高度应该≥0.8 eV,n^--GaN层的厚度≥200 nm,载流子浓度1×10¹⁷ cm^-3 左右,表面复合速率＜1×10⁷ cm/s。     

p-GaN层厚度对GaN基p-i-n结构紫外探测器性能的影响

研究了p-GaN层厚度对GaN基pin结构紫外探测器性能的影响.模拟计算表明：较厚的p-GaN层会减小器件的量子效率,然而同时也会减小器件的暗电流,较薄的p-GaN层会增加器件的量子效率,但是同时也增加了器件的暗电流.进一步的分析表明,金属和p-GaN之间的结电场是出现这种现象的根本原因.在实际的器件设计中,应该根据实际需要选择p型层的厚度. 关键词： GaN 紫外探测器 量子效率 暗电流     

空间低能离子探测器的紫外响应测试

在空间离子探测过程中,太阳紫外光也会进入探测器产生光污染信号。为了考察它对离子探测的影响,搭建了一套模拟太阳紫外光污染的地面测试系统,并对自主研制的空间低能离子探测器原理样机进行了紫外响应测试。实验结果表明:沿水平方向进入分析器的紫外光响应可以忽略,而以一定倾斜角进入分析器的紫外光响应计数率约为102~ 103 s−1。根据测试结果,估算出探测器对太阳紫外光的抑制率约为10−8,分析了紫外光污染对探测空间低能离子如质子和 粒子的影响。对于质子,由于其通量大,紫外光的影响不大。而对于通量较小的 粒子,紫外光的影响较大,需要进一步采取有效措施进行抑制。此外,本测试系统可以推广到其它空间粒子探测器的太阳紫外光污染的地面模拟测试。In the detection of space ions, solar ultraviolet (UV) can also enter the detector and generate a noise to the signal of ions. A testing system on the ground is built to test the UV response of detector. Experiments on a home-made principle prototype of space low-energy ion detector are carried out by using this system. The results show that the response of detector to the UV entering the electrostatic analyzer along the horizontal direction can be negligible and counts of the response to the UV along a bias direction are about 102 ~103 s−1. According to the measured results, the UV suppression ratio is estimated to be about 10−8 and the inuence of solar UV on the detection of space low-energy ions such as proton and alpha particle has been analyzed. For proton, the inuence is insigni cant due to its high ux. But for the low ux alpha particle, the inuence of solar UV is noticeable and further rejection is needed. In addition, this system can also be applied to test the UV response of other space particle detectors.     

CVD金刚石薄膜探测器性能研究

通过实验测量和理论分析, 从载流子动力学角度研究了用于脉冲辐射探测的CVD金刚石薄膜探测器的适用结构、电荷收集效率和时间响应性能. 结果表明, CVD金刚石薄膜可以制成均匀型结构的探测器; 薄膜中的缺陷会降低探测器的电荷收集效率, 探测器的电荷收集效率随场强增大而增大直至饱和. 已研制的CVD金刚石探测器电荷收集时间可达719ps, 在2.5V/μm场强下达到饱和, 电荷收集效率 达60.5%; 晶格散射是影响探测器时间响应的主要因素, 选用大晶粒甚至单晶金刚石薄膜可以提高探测器时间响应.     

退火处理对ZnO纳米线紫外探测器性能的改善

通过介电泳方法定向排列了ZnO纳米线,制作了自组装有序的纳米线紫外探测器.为了适合在金叉指电极上排列,用水热方法设计生长了超长的ZnO纳米线,并通过700℃的热退火处理,使得可利用的表面缺陷增多.通过研究器件的光致发光光谱和光响应,发现光、暗电流比和响应恢复时间有显著提高,并分析了其中可能的机理.     

金刚石晶界辅助石墨烯沉积的成核机理仿真

石墨烯在新基材上的生长一直是被关注的焦点,而在以金刚石多晶体为基底沉积石墨烯的成核机理方面的研究对石墨烯大规模的制备具有重要的现实意义.本文采用反应性分子动力学仿真技术,模拟了镍催化双晶金刚石辅助石墨烯沉积生长的过程,研究了金刚石晶界对石墨烯成核生长过程中动力学行为的影响.研究结果表明晶界碳原子可作为补充碳源扩散至镍自由表面,参与石墨烯的成核生长.论文探究了温度对碳原子扩散行为的影响,发现当沉积温度为1700 K时,利于晶界碳原子在镍晶格中扩散,有效提高石墨烯成核密度;探究了沉积碳源流量对石墨烯表面质量影响,发现1700 K下采用较低的碳沉积速率1 ps–1有利于获得最佳的石墨烯表面质量.本文的研究结果不仅为金刚石晶界辅助石墨烯沉积生长提供了有效的理论模型和机理解析,还揭示了沉积温度和沉积碳源流量对生长石墨烯表面质量的影响规律,为石墨烯/金刚石多晶体异质结构在超精密制造和微电子领域的实际应用提供理论基础.     

不同钝化结构对非极性AlGaN-MSM紫外探测器性能的提升

在r面蓝宝石衬底上,采用金属有机化学气相沉积（MOCVD）法高温生长了未掺杂非极性AlGaN半导体薄膜,在此基础上制备了金属-半导体-金属（MSM）结构的紫外探测器。系统研究了在AlGaN半导体薄膜表面分别磁控溅射SiO₂纳米颗粒与SiO₂钝化层两种钝化手段对非极性AlGaN-MSM结构的紫外探测器性能的影响。实验结果表明：磁控溅射SiO₂纳米颗粒钝化或SiO₂钝化层两种手段都能提升AlGaN-MSM结构紫外探测器性能。暗电流测试表明,SiO₂纳米颗粒和SiO₂钝化层可使器件暗电流下降1~2个数量级,达到nA量级。光谱响应测试发现,在5 V偏压下,探测器在300 nm处具有陡峭的截止边,这表明其具有很好的深紫外特性,光谱响应提高了10³倍,紫外可见抑制比高达10⁵。     

Significant decrease in interfacial energy of grain boundary through serrated grain boundary transition

The mechanism of serrated grain boundary formation and its effect on liquation behaviour have been studied in a wrought nickel-based superalloy – Alloy 263. It was newly discovered that grain boundaries are considerably serrated in the absence of γ?′-phase or M₂₃C₆ at the grain boundaries. An electron energy-loss spectroscopy study suggests that serration is triggered by the discontinuous segregation of C and Cr atoms at grain boundaries for the purpose of relieving the excessive elastic strain energy. The grain boundaries serrate to have specific segments approaching one {111} low-index plane at a boundary so that the interfacial free energy of the grain boundary can be decreased, which may be responsible for the driving force of the serration. The serrated grain boundaries effectively suppress grain coarsening and are highly resistant to liquation due to their lower wettability resulting from a lower interfacial energy of the grain boundary.     

Grain boundary interdiffusion in the case of concentration-dependent grain boundary diffusion coefficient

The grain boundary diffusion in a binary system which exhibits a grain boundary phase transition is considered in the framework of Fisher's model. The kinetic law of the growth of the grain boundary phase and the distribution of the diffusant near the grain boundary are calculated. The method of determining of the concentration dependence of the grain boundary diffusion coefficient from the experimentally measured penetration profiles of the diffusant along the grain boundaries is suggested. The experimental results on Zn diffusion in Fe(Si) bicrystals, Ni diffusion in Cu bicrystals and grain boundary grooving in Al in the presence of liquid In are discussed in light of the suggested model.     

金刚石紫外发光器件研究进展

蓝光或紫外激光在光电子学和光储存方面有广阔的应用，一直是国际上关注的前沿领域．而金刚石是最好的半导体紫外发光材料．特别是用于高温、高压、高功率、强辐射和强腐蚀环境中更能显示其优越性．目前人们已在实验上用同质外延、异质外延的方法制备了金刚石紫外发光二极管，观察到了较强的紫外光发射．人们尝试用金刚石与其他半导体材料结合的方法，成功地研制出了金刚石紫外发光二极管，开拓了该研究领域最新研究方向．文章对这些金刚石紫外发光器件研究的最新进展进行了评述．     

The ultraviolet photoconductive detector based on Al-doped ZnO thin film with fast response

We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering.Optical and structural properties of the thin films were characterized using various techniques.At 6 V bias,a responsivity higher than 4 A/W in the wavelength shorter than 350 nm was obtained,and this responsibility dropped quickly and reached the noise floor in the visible region.Transient response measurement revealed that the...     

Theory of grain boundary motion during high-temperature DIGM

A theory of diffusion induced grain boundary migration (DIGM) is presented for high temperatures where volume diffusion of solute atoms out of the grain boundary is important. It is shown that due to the presence of a gradient term in the expression for the free energy of solid solution, even a relatively small discontinuity in the solute distribution across the gain boundary provides enough driving force for grain boundary migration. From the expression obtained for the grain boundary velocity the coefficient for the Ni diffusion across the grain boundaries in a Cu(Ni) polycrystal has been estimated.     

用SiCl4/H2气源沉积多晶硅薄膜光照稳定性的研究

对以SiH₄/H₂及SiCl₄/H₂为源气体、采用 等离子体增强化学气相沉积技术制备的非晶硅薄膜和多晶硅薄膜进行了光照稳定性的研究.实验表明，制备的多晶硅薄膜并没有出现 非晶硅中的光致衰减现象，其光电导、暗电导在光照过程中没有下降反而有所上升且电导率 变化快慢受氢稀释度的制约.多晶硅薄膜的光照稳定性可能来源于高的晶化度及Cl元素的存在. 关键词： 多晶硅薄膜 稳恒光电导效应 晶界 光致衰退效应     

Effect of solute atoms on grain boundary sliding in magnesium alloys

The effect of solid-solution alloying on grain boundary sliding (GBS) was investigated using pure magnesium and six kinds of Mg–X (X?=?Ag, Al, Li, Pb, Y and Zn) dilute binary solid solutions with an average grain size of 10?µm. A sharp increase in damping capacity caused by GBS was observed above a certain temperature. The temperature at which a sharp increase in damping capacity occurred depended on the alloying element. The addition of Y and Ag markedly increased the onset temperature (more than 100?K) for a sharp increase in damping capacity, whereas the addition of Zn, Al and Li slightly increased the onset temperature (less than 50?K) as compared with that for pure magnesium. Tensile tests at a temperature of 423?K revealed that the higher the onset temperature, the lower the strain rate sensitivity of the flow stress. It is suggested that the former elements (Y and Ag) are more effective in suppressing GBS in magnesium alloys than the latter ones (Zn, Al and Li). The suppression of GBS was associated with low grain boundary energy, and the extent to which the energy is reduced depended on the alloying element. It was suggested that the change in the lattice parameter (the so-called c/a ratio) affects the grain boundary energy, and thus, the occurrence of GBS.     

The stability of triple junctions during the grain boundary diffusion process

The grain boundary diffusion in a system with triple junctions is considered in such a geometry, in which the flows of diffusing atoms meet at the triple line. The solutions of the diffusion equation is given in the frameworks of Fisher's model and under the assumption of quasi-stationary distribution of the diffusing atoms along the grain boundaries. The change of the mechanical equilibrium at the triple junction due to the increase of the concentration of solute atoms is considered. It is shown that under some circumstances the triple junction looses its stability with respect to migration in the direction to the diffusion source. The stability diagrams in the segregation-diffusivity parameter space are plotted.     

微合金化元素晶界偏聚与钢的超细化理论研究

通过计算机编程建立钢奥氏体相中Σ5〈001〉/(210)大角晶界模型，用实空间的递推方法计 算碳、氮及微合金元素在完整晶体及晶界区引起的环境敏感镶嵌能，进而讨论碳、氮及微合 金元素在晶界区的偏聚及交互作用.计算结果表明，轻杂质C，N易偏聚于晶界区，且形成气 团；微合金元素在完整的奥氏体中趋于均匀分布，Ti，V，Nb易占位于晶界三角棱柱的顶部( 压缩区)，且其加入量足够大时，它们能够在晶界区形成气团；微合金元素能够偏聚于C，N 掺杂的大角晶界区，当温度下降使得C，N及微合金元素的浓度超过其最大固溶度时，在钢的 奥氏体晶界区将有C，N化合物脱溶，这些化合物既可成为奥氏体再结晶的异质晶核，又可以 阻碍奥氏体晶粒长大，故可起到细化晶粒作用.在微合金元素中Nb的细化效果最好. 关键词： 电子结构 晶界偏聚 超细化     

Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary

The grain boundaries (GBs) have a strong effect on the electric properties of ZnO thin film transistors (TFTs). A novel grain boundary model was developed to analyse the effect. The model was characterized with different angles between the orientation of the grain boundary and the channel direction. The potential barriers formed by the grain boundaries increase with the increase of the grain boundary angle, so the degradation of the transistor characteristics increases. When a grain boundary is close to the drain edge, the potential barrier height reduces, so the electric properties were improved.