A full W-band low noise amplifier module for millimeter-wave applications

A full W-band Low Noise Amplifier (LNA) Module is designed and fabricated in this letter. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz , has a small signal gain above 21 dB. The noise figure is lower than 5dB throughout the entire W-band (below 3 dB from 89 to 95GHz) at a room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low dc power consumption     

一种新研制的W频段固态GaN功率放大器毫米波源

介绍了一种新研制的W频段固态GaN功率放大器毫米波源,给出了系统组成与工作原理,提供了其主要部件W频段固态Gunn驱动源、W频段波导-微带转换器、主放大器芯片基本性能及实验测试结果。该固态毫米波源工作频率94 GHz,输出连续波功率大于300 mW,线性增益10 dB,附加效率(PAE)大于16%。在W频段固态毫米波源研制过程中,其单片微波集成电路(MMIC)功率放大器半导体材料选择经历了GaAs、InP到GaN演变,结果清楚表明, W频段毫米波源的GaN MMlC功率放大器输出功率、增益、效率、高温性能要优于其他固态MMIC功率放大器性能。 W频段大功率固态GaN MMlC技术将在毫米波领域带来新的技术革命和应用。     

Compact primary source for W-band reflector antenna

A double slot array antenna pasted on the aperture of a standard WR-10 waveguide is presented. Its compactness and airtightness make it suitable for serving as a primary source for reflector antennas. Compared to a standard WR-10 open-ended waveguide, it acts as a small FSS to provide up to 12 dB return loss enhancement within 9% bandwidth centred on 94 GHz, whereas radiation pattern and gain are similar. Good agreement is found between measured and predicted characteristics between 90 and 100 GHz. A return loss improvement is of particular interest while considering an antenna system with short focal length.     

Phase noise measurement of a pulsed W-band IMPATT source

A test method is described that uses the Delay Line Bridge (DLB) discriminator as a phase modulation (PM)- or amplitude modulation (AM) detector. A brief discussion is given to explain the different measurement requirements for pulsed sources used in Doppler RADAR with stationary or slow moving transmitter platforms, and fast moving transmitter platforms. A practical solution is offered to the problem of inadequate isolation in present day W-band PIN switches. This measurement set-up, provides a direct measure of the level of spurious oscillations of the IMPATT source, the relative noise content in the turn-on and turn-off region of the RF pulse, and the phase ripple. It also illustrates the influence of reference source injection locking level on the measured characteristics.     

基于InP基HEMTs的W波段高增益低噪声放大MMIC

本文基于自主研发的InP基高电子迁移率晶体管工艺设计并制作了一款W波段单级低噪声放大单片毫米波集成电路。共源共栅拓扑结构和共面波导工艺保证了该低噪声放大器紧凑的面积和高的增益,其芯片面积为900 μm×975 μm,84 GHz-100 GHz频率范围内增益大于10 dB,95 GHz处小信号增益达到最大值为15.2 dB。根据调查对比,该单级放大电路芯片具有最高的单级增益和相对高的增益面积比。另外,该放大电路芯片在87.5 GHz处噪声系数为4.3 dB,88.8 GHz处饱和输出功率为8.03 dBm。该低噪声放大器芯片的成功研制对于构建一个W波段信号接收前端具有重要的借鉴意义。     

A new self-align technology for GaAs analog MMIC's

A new self-align technology suitable for fabrication of GaAs low-noise FET's and MMIC's is demonstrated. The present technology, which is based upon sidewall technology and pattern inversion technology, provides a negligible short-channel effect, a low-parasitic resistance and a well-controlled breakdown voltage, all of which are essentially required for high microwave performance. An experimental 0.5-µm gate FET fabricated using the new process exhibits a high transconductance such as 220 mS/mm and a low-noise figure such as 1.6 dB at 12 GHz.     

W波段三维近场安检成像系统

本文介绍了一套基于频率步进体制的W波段三维近场安检成像系统以及相应的成像算法。W波段信号可以穿透普通衣物,对人员携带的藏匿物品进行成像。成像算法通过在频率波数域进行插值处理可以完全补偿近场的波前曲面。文中阐述了频率波数域的插值过程以及实验数据的预处理过程。成像系统通过发射宽带信号得到高分辨距离像,通过提高工作频率得到高分辨方位像,方位向分辨率优于5mm。成像实验结果表明该系统性能优于现有的Ka波段成像系统。     

A low-impedance coplanar waveguide using an SrTiO3 thinfilm for GaAs power MMIC's

A novel structure for coplanar-waveguide transmission lines with low impedance and low loss is demonstrated in this paper. The new structure simply has a high dielectric SrTiO₃ thin film underneath the coplanar conductors. Due to the high dielectric constant of SrTiO₃, the coplanar line exhibited characteristic impedance as low as 18 Ω with a slot width of 5 μm and the center conductor width of 50 μm, while a conventional coplanar line on GaAs showed only 30 Ω with the same configuration. The newly developed coplanar structure is easily applicable for present GaAs monolithic-microwave integrated-circuit (MMIC) technology, especially for power MMIC's and low-impedance devices     

A new digital phase shifter architecture suitable for MMIC's

A new architecture is proposed for digital phase shifters that is suitable for monolithic integration (MMIC's). It consists of an arrangement of a standard building block which is a vector summer and limiter repeated many times over the circuit. Examples of phase shifters up to 6 b are given. Other arrangements of these blocks are mentioned, which give rise to new possibilities     

A process control methodology applied to manufacturing GaAs MMIC's

A methodology for guiding process-driven manufacturing organizations in instituting process control on a facility-wide basis is proposed. The methodology begins with defining a specific process and the customer's expectations of this process, then increases control over the process through four levels: measurable, predictable, acceptable, and recoverable. An application of this methodology to the control of submicron-gate lithography on a GaAs monolithic microwave integrated circuit (MMIC) process is discussed. Experience suggests that the realization of process control is as much a managerial problem as it is a technical one. This application suggests that the proposed methodology serves as a useful conceptual guideline for operators, engineers, and managers in uniformly applying a wide variety of process control tools     

一种工作在W波段的角锥喇叭天线

本文提出了一种工作在W波段的角锥喇叭天线,天线采用矩形波导馈电。采用电磁场仿真软件Ansoft HFSS 11对所设计的天线进行仿真,结果表明该天线在75GHz～110GHz范围以内具有回波损耗优于-20dB,增益大于20dB的良好特性。天线具有宽频带,低旁瓣,结构简单的优点,在目标识别成像、隐身与反隐身、遥测遥感、地下目标探测以及短距离高速无线通信等领域具有广泛的应用。     

W波段四腔回旋速调管放大器

介绍了W波段四腔回旋速调管放大器的设计.放大器工作在基膜TE01圆电模式,电子束工作电压70 kV,工作电流6A,设计的双阳极磁控式注入电子枪,电子束纵横速度比1.5,速度零散小于4％.采用粒子模拟方法分析了各种参数对器件性能的影响.模拟结果显示,设计的放大器在电子束速度零散4％的情况下,增益35 dB,带宽800 MHz,输出功率100 kW,效率为23.8％.     

基于基片集成波导的W波段基波注入锁定谐波振荡器

研制了一种基于基片集成波导的W波段平面注入锁定谐波振荡器.为了获得大的注入功率, 注入锁定谐波振荡器采用基波端口强耦合结构, 利用谐波提取技术的频率倍频作用, 自由振荡输出频率在90.2 GHz附近.当基波注入信号在45.08 GHz附近时, 锁定带宽大于120 MHz, 输出功率大于6.5 dBm.将该平面集成的注入锁定谐波振荡器与低频参考信号同步, 能够产生稳定的W波段低相噪信号.     

W-band monolithic oscillator using InAlAs/InGaAs HEMT

A W-band monolithic integrated oscillator circuit was designed and fabricated using submicron HEMT technology. The oscillation frequency was around 81 GHz and the power was -7 dBm at the chip level. This is the first report of an InAlAs/InGaAs monolithic oscillator operating at the W-band.<>     

基于基片集成波导的W波段基波注入锁定谐波振荡器

研制了一种基于基片集成波导的W波段平面注入锁定谐波振荡器.为了获得大的注入功率,注入锁定谐波振荡器采用基波端口强耦合结构,利用谐波提取技术的频率倍频作用,自由振荡输出频率在90.2 GHz附近.当基波注入信号在45.08 GHz附近时,锁定带宽大干120 MHz,输出功率大于6.5 dBm.将该平面集成的注入锁定谐波振荡器与低频参考信号同步,能够产生稳定的W波段低相噪信号.     

A finline PSK modulator for W-band

A 90° phase switch in finline technique has been developed for application in a W-band homodyne network analyzer. It is realized on a 0.127 mm fibre reinforced teflon substrate in a standard WR 10-waveguide. It employs two low capacitance beam-lead PIN diodes mounted in series to the finline. The waveguides are connected via Dolph-Chebyshev tapers. The analysis of this circuit shows that the diode junction capacitance imposes certain constraints for the wave impedances which must be realized. They can only be met with overlapping antipodal finlines. There are several analytical solutions with different lengths and wave impedances of the transmission line sections. The choice has been taken with respect to bandwidth in the limits imposed by the range of wave impedances which can be realized. Between 90 and 105 GHz, the phase error of the realized modulator is below ±2.5°, and the amplitude imbalance is less than 0.5 dB.     

一种W波段介质密封型的波导-微带转换结构

提出了一种W波段波导-微带转换结构。该转换结构采用探针耦合转换的形式实现微波信号从矩形波导(BJ-900)到微带传输线的转换,并利用介质板实现波导口的密封。设计制作背靠背转换结构,在75~105GHz频率范围内测试结果:回波损耗优于-10dB,插入损耗小于3dB,泄漏率小于1×10-9Pa·m3/s。     

A multicomposite, multilayered cylindrical dielectric resonator forapplication in MMIC's

A method, based on the mode matching technique, to study various resonant modes of a multicomposite, multilayered cylindrical dielectric resonator is presented. Dielectric sphere and cone resonators placed in practical environments are investigated. The calculated resonant frequencies show very good agreement compared with the numerical results of the finite difference method for the spherical resonator and with the measured values for the conical resonator, respectively. Experimental investigations show that the conical resonator can be coupled to a circular microstrip line, which has small size at high frequencies and may be integrated together with an oscillator     

Open and short circuits in coplanar MMIC's

Coplanar MMIC stub configurations are investigated by means of the finite-difference method in the frequency domain. The open end, the short end, and a capacitively loaded short end (MIM-short) are analyzed. Their parasitic effects are described in terms of the effective length extension l_ext. The influence of the different line parameters is discussed and simple design rules are given