Auger electron spectroscopy and electron energy loss spectroscopy studies on carbonization of Si(100) and (111) surfaces with ethylene

The reactions of Si(100) and Si(111) surfaces at 700 °C (973 K) with ethylene (C₂H₄) at a pressure of 1.3×10⁻⁴ Pa for various periods of time were studied by using Auger electron spectroscopy (AES) and electron energy loss spectroscopy (ELS). For a C₂H₄ exposure level, the amount of C on the (111) surface was larger than that on the (100) surface. The formation of β-SiC grain was deduced by comparing the C_KLL spectra from the sample subjected to various C₂H₄ exposure levels, and from β-SiC crystal.     

Effect of ion bombardment at low energy on (100)InP surfaces,studied by Auger electron spectroscopy

Surface cleaning of (100)InP substrates with an Ar⁺ ion beam of 250–400 eV is analysed by AES and shown as a function of time. The results obtained show the possibility of removing the contamination layer without any significant chemical damage to the InP surface.     

Hydrogen adsorption on silicon (1 1 1) surfaces studied by Auger electron spectroscopy

The adsorption of atomic hydrogen on the (1 1 1) planes of silicon single crystals is studied by Auger Electron Analysis, using the decrease of the silicon Auger peak heigh as a measure of the hydrogen coverage. The zero coverage sticking coefficient is found to be 3 × 10^?4.     

Mechanisms for oxygen adsorption on the Si(110) surface studied by Auger electron spectroscopy

Oxygen adsorption on the Si(110) surface has been studied by Auger electron spectroscopy. For a clean annealed surface chemisorption occurs, with an initial sticking probability of ～6 × 10^?3. In this case the oxygen o_kll signal saturates and no formation of SiO₂ can be detected from an analysis of the Si L_2,3VV lineshape. With electron impact on the surface during oxygen exposure much larger quantities are adsorbed with the formation of an SiO₂ surface layer. This increased reactivity towards oxygen is due to either a direct effect of the electron beam or to a combined action of the beam with residual CO during oxygen inlet, which creates reactive carbon centers on the surface. Thus in the presence of an electron beam on the surface separate exosures to CO showed adsorption of C and O. For this surface subsequent exposure in the absence of the electron beam resulted in additional oxygen adsorption and formation of SiO₂. No adsorption of CO could be detected without electron impact. The changes in surface chemistry with adsorption are detectable from the Si L_2,3VV Auger spectrum. Assignments can be made of two main features in the spectra, relating to surface and bulk contributions to the density of states in the valence band.     

Electron beam interactions with CO on W {100} studied by Auger electron spectroscopy

The interaction of 2500 eV electrons with carbon monoxide chemisorbed on tungsten {100} was investigated by rapid-scan Auger electron spectroscopy. When no α state was present the O and C signals from the β state of CO were invariant during electron bombardment, giving an upper limit estimate for the electron stimulated desorption cross section, Q_β of 2 × 10^?21 cm². With the crystal at room temperature and saturated with CO, however, electron-beam induced accumulation of carbon was observed and characterised, the rate of the process being independent of CO pressure at pressures above 2 × 10^?8 Torr. At 450 K the rate was found to be pressure dependent up to at least 6 × 10^?7 Torr. A model is proposed for the accumulation process, which is based on electron beam dissociation of α₂-CO to form adsorbed carbon and gaseous O and the creation of new sites for further α₂-CO adsorption; it is in quantitative agreement with the results and yields a cross section for ESD of α₂-CO (Q_α2 = 1.55×10^?18cm²) in close agreement with direct measurements.     

Spin polarized Auger spectroscopy from Fe(100)

The spin polarization of the M₂₃M₄₅M₄₅ Auger line of Fe(100) is shown to reveal two gain satellites at 4 and 17 eV, respectively, above the M₂₃ threshold. The lower one was previously identified as autoionization emission, whereas the higher one is a newly observed feature with a strikingly large positive spin polarization of > 80%. The spin polarization of the M₁M₄₅M₄₅ line is also reported.     

Investigation of native-oxide growth on HF-treated Si(111) surfaces by measuring the surface-state distribution

The evaluation of the surface state distribution of differently HF-treated Si(111) surfaces during the native-oxide growth in air is investigated by the large-signal field-modulated photovoltage technique. The surface state distribution consisting of intrinsic and extrinsic Si dangling bond defects is directly related to the state of oxidation of the Si surface. It is shown that the kind of HF treatment strongly influences the concentration of extrinsic defects with a lower state of oxidation. Special HF preparations for H termination of the Si(111) surface result in a nearly intrinsic surface state distribution. During the oxidation process three typical phases can be distinguished each characterized by specific defect structures. It was found that native-oxide growth is highly sensitive to the concentration of extrinsic defects directly after HF treatment.     

Auger electron spectroscopy of the kinetics of evaporation of palladium beaded films from sapphire substrate

) surface of sapphire were investigated by Auger electron spectroscopy in the temperature range of 1053–1083 K. It was found that the decrease of the effective thickness during heat treatments under 10^-8 mbar was caused by evaporation from the surface of the substrate. Using the model developed by Kaganovskii and Beke we have established that the process is controlled by surface diffusion. It was shown that the evaporation rate of palladium adatoms from an alumina surface is given by I_o=1.45×10³⁶exp{-(393±46 kJ/mol)/RT}ms, and, on the basis of an estimation of the surface diffusion length, the effective surface diffusion coefficient D_s was evaluated: Received: 30 March 1998/Accepted: 28 May 1998     

Auger electron spectroscopy study on the Cr/Al2O3 interfacial reactions

Interfacial reactions of evaporated chromium with surface has been studied using Auger electron spectroscopy (AES). The results reveal that the interfacial region consists of a mixture, which is a double oxide of Cr and Al or two separated oxides. After annealing, the chromium oxide and the metallic Al produced by reduction of the Al³⁺ ions were easily detected by AES at the interface. We suggest that the interfacial reaction occurs mainly by the charge transfer from the 3d electrons of Cr atoms to O 2p orbitals of the Al₂O₃ substrate. The annealing at higher temperature (973 K) is favourable to promote the interfacial reaction between the surface oxygen and the initial few atomic monolayers of the deposited chromium. The results also showed that the change of the relative Auger peak-to-peak height (APPH(%)) of the Cr LMM group peaks can be used as an index to identify the oxidation states of chromium at the Cr/Al₂O₃ interface.     

On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process

The properties of ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical oxidation in nitric acid aqueous solutions (NAOS) and passivated in HCN aqueous solutions were investigated by electrical, optical and structural methods. n- and p-doped (1 0 0) crystalline Si substrates were used. There were identified more types of interface defect states in dependence on both post-oxidation treatment and passivation procedure. On samples prepared on n-type Si, continuous spectrum of defect states of 0.05-0.2 eV range and discrete defect traps, ∼E_CB − 0.26 eV and ∼E_CB − 0.39 eV, were found. All mentioned defects are related with various types of Si dangling bonds and/or with SiO_x precipitates. Post-metallization annealing of investigated MOS structures reduced the interface defect density and suppressed the leakage currents. It did not change spectral profile of interface defect states in the Si band gap. In addition, there are presented following two optical phenomena: relation between amplitude of photoluminescence signal of NAOS samples and parameters of chemical oxidation process and quantum confinement effect observed on samples containing Si grains of size less as ∼2 nm.     

Auger analysis of etched (100) GaAs surfaces

The Auger depth profiling technique has been used to study the surface oxygen coverage and stoichiometry of (100) GaAs surfaces etched in various etching solutions. The quality of the surface varies with the etching solution, the etching time and the relative concentrations of the agents in each solution. The electrical behaviour of Schottky contacts deposited on the etched surfaces, was clearly affected by the characteristics of the surface.     

Oxygen diffusion through thin Pt films on Si(100)

We have investigated the diffusion of oxygen through evaporated platinum films on Si(100) upon exposure to air using substrates covered with Pt films of spatially and continuously varying thickness (0–500 Å). Film compositions and morphologies before and after silicidation were characterized by modified crater edge profiling using scanning Auger microscopy, energy-dispersive X-ray microanalysis, scanning tunneling microscopy, and transmission electron microscopy. We find that oxygen diffuses through a Pt layer of up to 170 Å forming an oxide at the interface. In this thickness range, silicide formation during annealing is inhibited and is eventually stopped by the development of a continuous oxide layer. Since the platinum film consists of a continuous layer of nanometer-size crystallites, grain boundary diffusion of oxygen is the most probable way for oxygen incorporation. The diffusion constant is of the order of 10^–19 cm²/s with the precise value depending on the film morphology.     

The effect of adsorbed atomic hydrogen on the growth of ultrathin silicon films on Ge(100) studied by positron-annihilation-induced Auger electron spectroscopy (PAES)

The effects of adsorbed atomic hydrogen on the stability of silicon films grown on a Ge(100) substrate were studied by using positron-annihilation-induced Auger electron spectroscopy (PAES) and electron-induced Auger electron spectroscopy (EAES). PAES is almost exclusively sensitive to the topmost atomic layer due to the trapping of positrons in an image potential well just outside the surface before annihilation. This surface specificity was exploited in the study of film stability and interfacial mixing during the growth of silicon on Ge(100). The PAES results show that the prior adsorption of hydrogen prevented the segregation of germanium on top of the deposited silicon, and that the hydrogen adsorption was useful in growing a thermally stable structure.     

Structure reorganization in polymer films of nafion due to swelling studied by scanning force microscopy

The surface morphology of dry and swollen Nafion films was investigated on the micrometer and nanometer scale by scanning force microscopy. The results show that the disordered network structure of dry films undergoes a reorganization process in the course of swelling and transforms into an ordered structure of parallel fibrils. No substantial changes in the fibril dimensions were found in the swollen state. This can be an indicator that swelling occurs at the supramolecular level.     

Scandium and lutetium surfaces studied by reflection electron energy-loss spectroscopy

The reflection electron energy-loss spectra of the (1 0 0) and (0 0 1) surfaces of Sc single crystals and the (0 0 1) surface of a Lu single crystal have been studied with primary energies in the range 50–2000 eV. Scandium is congeneric with lutetium and the loss spectra of the two elements are very similar in both the collective excitations and the interband transitions. Strong excitations observed at around 41 eV are attributed to 3p → 3d and 5p → 5d transitions in Sc and Lu, respectively. The loss data of Sc fit the characteristic energy-loss data of the other elements of the first group of transition metals. Oxygen adsorption and nitrogen adsorption on the (1 0 0) surface of Sc influence the loss spectra. The observed differences are correlated with density-of-states calculations for Sc, ScO and ScN.