Metallic alloy precipitates in high dose indium implanted MgO

Abstract

MgO implanted at room temperature with 150keV In⁺ ions and doses ranging from 10¹⁵ to 10¹⁷ ions cm^?2 was studied by optical absorption and transmission electron microscopy (TEM). Creation of defects in the anionic sublattice (F-, F⁺-, F₂-centers) and in the cationic sublattice (V^?-centers) are observed. Subsequent annealings of the implanted crystals have shown different behaviours depending on the implanted dose. For medium dose (2 × 10¹⁶ ions cm^?2), the formation of In³⁺ species seems to be the preponderant phenomenon. At higher dose (8 × 10¹⁶ ions cm^?2), metallic precipitates are formed between 400 and 700°C. The identification of these precipitates has been achieved using TEM: they are formed of a metallic alloy Mg₃In with a hexagonal structure and their orientation relationship with respect to the MgO matrix is: (0001)Mg₃In//(111)Mgo and [1120]_Mg3In// [l10]MgO.     

Spectroscopic study of erbium-activated crystals of double calcium yttrium fluoride Ca<Subscript>0.89</Subscript>Y<Subscript>0.11</Subscript>F<Subscript>2.11</Subscript>:Er<Superscript>3+</Superscript>: I. Intensity of spectra and luminescence kinetics

Ca_0.89Y_0.11F_2.11:Er³⁺ (CYF:Er) crystals with an erbium content of 1–15 at % have been grown. The optical spectra and luminescence kinetics of CYF:Er crystals have been investigated at low (～5 K) and room temperatures. Based on an analysis of the absorption spectra at low temperature, the structure of Stark splitting of erbium levels in CYF:Er crystals is determined. Room-temperature absorption spectra are used to calculate the spectra of absorption cross sections and oscillator strengths of transitions from the erbium ground state to excited multiplets. It is shown that the absorption spectrum of CYF:Er crystals contains broad bands in the ranges of 790–815 and 965–980 nm, which correspond to the range of emission of laser diodes. For the band peaking near 967 nm, the peak absorption cross section is σ _abs ^max = 2.7 × 10^?21 cm². The intensity parameters are determined by the Judd-Ofelt method to be Ω₂ = 1.39 × 10^?20, Ω₄ = 1.34 × 10^?20, and Ω₆ = 2.24 × 10^?20 cm². The radiative transition probabilities, radiative lifetimes, and branching ratios are calculated with these values. The luminescence decay kinetics from excited erbium levels upon selective excitation is investigated and the experimental lifetimes of the 4F _9/2, ⁴ S _3/2, and ⁴ G _11/2 radiative erbium levels are determined. The dependences of multiphonon relaxation rates on the energy gap in CYF:Er crystals are obtained. The rates of nonradiative multiphonon relaxation from radiative erbium levels are determined.     

Crystal lattice defects and Hall mobility of electrons in Si: Er/Si layers grown by sublimation molecular-beam epitaxy

The density of crystal lattice defects in Si: Er layers grown through sublimation molecular-beam epitaxy at temperatures ranging from 520 to 580°C is investigated by a metallographic method, and the Hall mobility of electrons in these layers is determined. It is found that the introduction of erbium at a concentration of up to ～5 × 10¹⁸ cm^?3 into silicon layers is not accompanied by an increase in the density of crystal lattice defects but leads to a considerable decrease in the electron mobility.     

The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure

Abstract

Oxygen contamination is the main source of free electrons in bulk GaN grown at high-pressure. We used erbium as a promising getter/compensation center to reduce the electron content in GaN. Both optical and electrical measurements indicate the reduction of electron concentration from the initial 6 × 10¹⁹cm^?3 down to 1 × 10¹⁹cm^?3. A photoluminescence study proves that erbium is incorporated into the GaN host lattice, and emits light at ～ 1.5μm.     

Spectroscopic study of double sodium-yttrium fluoride crystals doped with erbium Na<Subscript>0.4</Subscript>Y<Subscript>0.6</Subscript>F<Subscript>2.2</Subscript>:Er<Superscript>3+</Superscript>: I. Intensities of luminescence spectra and kinetics of luminescence

Na_0.4Y_0.6F_2.2:Er³⁺ (NYF:Er) crystals with an erbium concentration as high as 100 at. % (Na_0.4Er_0.6F_2.2) were grown by the Bridgman-Stockbarger method. The optical spectra were investigated at low (6 K) and room temperatures. It is shown that the absorption spectrum of NYF:Er crystals contains wide bands (790–801 and 965–980 nm) corresponding to the emission range of laser diodes. The peak absorption cross section σ_a for the band peaked at λ=970.4 nm is 0.15×10^?20 cm². On the basis of the analysis of the absorption and luminescence spectra at low (6 and 12 K) temperatures, the structure of the Stark splitting of erbium levels was determined as a structure of quasi-centers for which Stark components are inhomogeneously broadened. The oscillator strengths of the transitions from the ground state of erbium to excited multiplets were calculated from the absorption spectra measured at T=300 K, and the intensity parameters Ω_t were determined by the Judd-Ofelt method: Ω₂=1.65×10^?20 cm², Ω₄=0.56× 10^?20 cm², and Ω₆=1.01×10^?20 cm². These values of the intensity parameters were used to calculate the probabilities of radiative transitions and the branching ratios. The rates of multiphonon nonradiative transitions in NYF: Er were estimated. The luminescence decay kinetics for radiative levels of erbium ions upon their selective excitation by nanosecond laser pulses was studied. The intracenter lifetimes of radiative levels of erbium ions were determined from the luminescence kinetics upon selective ion excitation by low-intensity light in a sample with a low erbium concentration (0.5%). It is demonstrated that, with an increase in temperature from 6 to 300 K, luminescence from the ⁴ G _11/2, ² G(H)_9/2, and ⁴ F _9/2 levels is quenched as a result of multiphonon nonradiative transitions. Luminescence from the ⁴ I _9/2 level is quenched only insignificantly with increasing temperature, and no quenching of luminescence from the ⁴ I _11/2 and ⁴ I _13/2 levels is observed. The spectra of steady-state luminescence of NYF:Er(0.5–15%) crystals were investigated upon broadband excitation by UV and UV-visible lamp light and selective time-resolved laser excitation. It is shown that low-lying levels of erbium ions separated by an energy gap smaller than 2500 cm^?1 are populated via cascade mechanisms. On the basis of the results obtained, it is concluded that NYF:Er ³⁺ crystals are promising candidates for active media of tunable diode-pumped lasers.     

Photoluminescence and structural defects in silicon layers implanted by iron ions

The photoluminescence spectra of silicon samples implanted by ⁵⁶Fe⁺ ions [energy, 170 keV; dose, 1×10¹⁶, (2–4)×10¹⁷ cm^?2] and annealed at temperatures of 800, 900, and 1000°C are measured. The structure of the samples at each stage of treatment is investigated using transmission electron microscopy (TEM). It is found that the phase formation and morphology of crystalline iron disilicide precipitates depend on the dose of iron ions and the annealing temperature. A comparison of the dependences of the intensity and spectral distribution of the photoluminescence on the measurement temperature, annealing temperature, and morphology of the FeSi₂ phase revealed the dislocation nature of photoluminescence.     

Formation of bubbles and blisters in hydrogen ion implanted polycrystalline tungsten

ABSTRACT

Tungsten (W) has been regarded as one of the most promising plasma facing materials (PFMs) in fusion reactors. The formation of bubbles and blisters during hydrogen (H) irradiation will affect the properties of W. The dependence of implantation conditions, such as fluence and energy, is therefore of great interest. In this work, polycrystalline tungsten samples were separated into two groups for study. The thick samples were implanted by 18?keV H₃⁺ ions to fluences of 1?×?10¹⁸, 1?×?10¹⁹ and 1?×?10²⁰ H⁺/cm², respectively. Another thick sample was also implanted by 80?keV H₂⁺ ions to a fluence of 2?×?10¹⁷ H⁺/cm² for comparison. Moreover, the thin samples were implanted by 18?keV H₃⁺ ions to fluences of 9.38?×?10¹⁶, 1.88?×?10¹⁷ and 5.63?×?10¹⁷ H⁺/cm², respectively. Focused ion beam (FIB) combined with scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used for micro-structure analysis, while time-of-flight ion mass spectrometry (ToF-SIMS) was used to characterize the H depth profile. It is indicated that bubbles and blisters could form successively with increasing H⁺ fluence. H bubbles are formed at a fluence of ～5.63?×?10¹⁷ H⁺/cm², and H blisters are formed at ～1?×?10¹⁹ H⁺/cm² for 18?keV H₃⁺ implantation. On the other hand, 80?keV H₂⁺ ions can create more trapping sites in a shallow projected range, and thus enhancing the blisters formation with a relatively lower fluence of 2?×?10^17?H⁺/cm². The crack-like microstructures beneath the blisters are also observed and prefer to form on the deep side of the implanted range.     

Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

High-quality ZnO thin films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy. X-ray diffraction and transmission electron microscopy reveal that the ZnO films have high structural quality and an atomically sharp ZnO/Al₂O₃ interface. The full width at half maximum values of the 0002 and $30\bar{3}2$ ZnO ω-rocking curves are 467.8 and 813.5 arc sec for a 600 nm thick ZnO film. A screw dislocation density of 4.35×10⁸ cm^?2 and an edge dislocation density of 3.38×10⁹ cm^?2 are estimated by X-ray diffraction. The surface of the ZnO epilayers contains hexagonal pits, which can be observed in the Zn-polar ZnO. The films have a resistivity of 0.119 Ω?cm, an electron concentration of 6.85×10¹⁷ cm^?3, and a mobility of 76.5 cm²?V^?1?s^?1 at room temperature. Low temperature photoluminescence measurements show good optical properties comparable to ZnO single crystals.     

Preparation and thermoelectric power of SnBi4Se7

Polycrystalline samples of Bi₂Se₃ and a stoichiometric ternary compound in the quasi-binary system SnSe–Bi₂Se₃ have been prepared and characterized by X-ray powder diffraction analysis. At room temperature the carrier concentration values are n?=?1.1?×?10¹⁹?cm^?3 for Bi₂Se₃ and n?=?0.53?×?10¹⁹?cm^?3 for SnBi₄Se₇. The thermoelectric power has been measured over the temperature range 90–420?K. The thermoelectric power of Bi₂Se₃ is higher than that for SnBi₄Se₇, which shows that the Sn impurity has an acceptor character. Therefore, doping Bi₂Se₃ with tin atoms does not improve thermoelectric properties of this material, due to decrease the value of the power factor σS ². Transport properties of the studied polycrystalline samples are characterized by a mixed transport mechanism of free carriers. It is necessary to add more than one Sn atom to the Bi₂Se₃ compound in order to suppress the electron concentration by one electron. Such behaviour of the dopant is explained by the formation of various structural defects. Besides the dominant substitutional defect, Sn_Bi, tin atoms also form uncharged defects, corresponding to seven-layer lamellae of the composition Se–Bi–Se–Sn–Se–Bi–Se which corresponds to the structure of the SnBi₂Se₄.     

The lowest metal-to-bipyridine charge-transfer excited state of [Cr(2,2′-bipyridine)(CO)4]

The DV-Xα molecular-orbital calculations have been carried out on [Crbpy(CO)₄](bpy,2,2′-bipyridine) and its electron attachment and detachment products. The one-electron attachment of [Crbpy(CO)₄] yields a complex of bipyridine anion radical, while the one-electron detachment results in ionization of the central metal atom. The lowest excited state of [Crbpy(CO)₄] is the metal-to-ligand charge-transfer (MLCT) excited state which consists of the bipyridine anion radical and the central metal ionized. The transition-state calculation predicts the lowest MLCT excited states at around 23～30×10³ cm^?1 and the lowest bipyridine (π,π^*) excitations at 36×10³ cm^?1 and 42～45×10³ cm^?1. The calculation also concludes that the MLCT excitation induces a counter migration of the other electrons not directly involved in the charge-transfer excitation. The configuration-interaction calculations predict the lowest MLCT excited singlet states at around 21～35×10³ cm^?1 and the lowest bipyridine (π, π^*) excited singlet states at 42～62×10³ cm^?1, while the emissive lowest MLCT triplet state is at 17×10³ cm^?1. The transition moments evaluated with the transition-state wavefunctions can reproduce qualitatively the observed absorption spectral profile. The intensity of the MLCT transitions is obtained from the allowed (π, π^*) transitions of coordinated bipyridine but is not due to the intrinsic transition moments of MLCT excitations.     

Evaporated a-Si films with low ESR defect density by hydrogenation under NH3 ambient

a-Si films were obtained by a reactive evaporation of Si atoms with an electron gun, under a NH₃ ambient of 5 × 10^?5 torr. The H introduced amount efficiently reduces the ESR dangling bond density from 4 × 10¹⁹ cm^?3 in pure samples to 2 × 10¹⁷ cm^?3. The hydrogen presence is evidence by both the Si-H infrared bands and the strong spin-density increase with annealing. This increase, beginning at a temperature of 350°C, is attributed to the H effusion. XPS measurements show also an incorporation of bonded nitrogen.     

Energy spectrum of (Sn0.65Pb0.35)0.95Ge0.05Te solid solutions

The paper reports the study on the resistivity ρ and thermoemf S of the (Sn_0.65Pb_0.35)_0.95Ge_0.05Te solid solution layers. The dependences of ρ and S on the hole concentrations in the range 3×10¹⁹–2×10²¹ cm^?3 exhibit jumps in the resistivity and thermoemf minima at close hole concentrations p ₁≈9×10¹⁹ cm^?3, p ₂≈2.5×10²⁰ cm^?3, and p ₃≈4.5×10²⁰ cm^?3. The observed jumps and minima suggest a complex structure of the valence band and the presence of critical points in the energy spectrum of holes. According to the data for SnTe, the critical points in the energy spectrum at the given hole concentrations are identified as the Σ-extremum, saddle point LΣ, and Δ-extremum, respectively.     

Electrical properties of n-type vapor-grown gallium nitride

Hall measurements are reported for undoped and Zn-doped vapor-grown single crystal GaN on (0001) Al₂O₃ layers with 298 K carrier concentrations (n-type) between 1·4×10¹⁷cm^?3 and 9×10¹⁹ cm^?3. Then n～10¹⁷ cm^?3 crystals (undoped) have mobilities up to μ～440 cm²/V sec at 298 K. Their conduction behavior can be described by a two-donor model between 150 and 1225 K and by impurity band transport below 150 K. Crystals with n≥8×10¹⁸ cm^?3 show metallic conduction with no appreciable variation in n or μ between 10 and 298 K.Results of mass spectrographic analyses indicate that the total level of impurities detected is too low to account for the observed electron concentration at the n～10¹⁹ cm^?3 level, and suggest the presence of a high concentration of native donors in these crystals. No significant reduction in carrier concentration was achieved with Zn doping up to concentrations of ～10²⁰ cm^?3 under the growth conditions of the present work, and no evidence was found to indicate that high conductivity p-type behavior may be achieved in GaN. The influence of factors such as growth rate, crystalline perfection and vapor phase composition during growth on the properties of the layers is described.     

Silicon negative ion implantation induced vacancy defects in thermally grown SiO2 thin films

ABSTRACT

Thermally grown SiO₂ thin films on a silicon substrate implanted with 100?keV silicon negative ions with fluences varying from 1?×?10¹⁵ to 2?×?10¹⁷ ions cm^?2 have been investigated using Electron spin resonance, Fourier transforms infrared and Photoluminescence techniques. ESR studies revealed the presence of non-bridging oxygen hole centers, E′-centers and P_b-centers at g-values 2.0087, 2.0052 and 2.0010, respectively. These vacancy defects were found to increase with respect to ion fluence. FTIR spectra showed rocking vibration mode, stretching mode, bending vibration mode, and asymmetrical stretching absorption bands at 460, 614, 800 and 1080?cm^?1, respectively. The concentrations of Si–O and Si–Si bonds estimated from the absorption spectra were found to vary between 11.95?×?10²¹ cm^?3 and 5.20?×?10²¹ cm^?3 and between 5.90?×?10²¹ cm^?3 and 3.90?×?10²¹ cm^?3, respectively with an increase in the ion fluence. PL studies revealed the presence of vacancies related to non-bridging oxygen hole centers, which caused the light emission at a wavelength of 720?nm.     

Radiation enhanced diffusion in UO2 and (U,Pu)O2

Abstract

The radiation enhanced diffusion (coefficient D*) of U-233 and Pu-238 in UO₂ and (U, Pu)O₂ with 2.5 and 15% Pu was measured during fission in a nuclear reactor. Normal diffusion sandwiches with a thin tracer layer were used. A radio-frequency furnace allowed the temperatures to be varied between 130 and 1400°. Neutron fluxes (7 × 10¹² to 1.2 × 10¹⁴ n cm^?2 s^?1) and irradiation times (56 to 334 h) were also varied to cover ranges of fission rates [Fdot] between 7× 10¹¹ and 6.4 × 10¹³ f cm^?3 s^?1 and of doses F between 4.2 × 10¹⁷ and 3.1 × 10¹⁹ f cm³. Below ～1000°, D* was completely athermal and increased linearly with [Fdot]. It was described by D* = A[Fdot] with A = 1.2× 10^?29cm⁵. A possible temperature dependence was indicated between ～1000and 1200°. The results are explained in terms of thermal and pressure effects of fission spikes and are related with other studies of radiation damage as well as with technologically interesting processes occurring in UO₂ during irradiation.     

Structural singularities of the Eu2+-doped spatially coherent [KBr0.097I0.903](0.348):[KBr0.459Cl0.511I0.030](0.652) composite as seen under the epifluorescence optical microscopy

Large crystal growths of the Eu²⁺-doped spatially coherent [KBr_0.097I_0.903](0.348):[KBr_0.459Cl_0.511I_0.030](0.652) composite were characterized by X-ray diffraction and then studied by epifluorescence optical microscopy. Doping Eu²⁺ ions were observed to prefer sites located at certain linear structural singularities of the composite matrix to be segregated at. These singularities (2.1?×?10⁷?singularities?cm^?2), identified as crystal lattice dislocations, were found to be distributed within the composite matrix so that they form periodic arrays of linear structural singularities (1.8?×?10⁴?singularities?cm^?1). These arrays, identified as grain sub-boundaries, were found to envelope individual structural domains (1–5?µm in size) of either KBr_0.459Cl_0.511I_0.030:Eu²⁺ or KBr_0.097I_0.903:Eu²⁺. These domains were found to aggregate among themselves to form the whole composite building. Small misfit angles (e.g. 7′?±?1′ and 10′?±?1′) characterize homo-phase structural domains while large misfit angles are characteristic of hetero-phase structural domains. Crystal lattice dislocations, forming the grain sub-boundaries, were found to present, as structural features, kinks and bifurcation points. The spatial configurations adopted by two of these features are carefully described.     

Thermally quenched and generated paramagnetism in Ge42S58 glass

Two kinds of paramagnetic defects whose density increases and decreases with temperature have been observed in Ge₄₂S₅₈ glass using ESR technique. The increasing and decreasing defects are interpreted as resulting from Ge dangling bonds with negative and positive effective electron correlation energies, respectively. Unlike usual amorphous semiconductors, Ge₄₂S₅₈ glass contains defects with the effective electron correlation energy whose value ranges from positive to negative depending on environment around the defect. The densities of the defects with the positive and negative values are about 4 × 10¹⁵ and 3 × 10¹⁷ cm^?3 respectively.     

The ZnHg excimer: Optical and kinetic properties

The optical and collisional properties of the ZnHg excimer have been examined by optically pumping the Zn (4¹S₀→ 4³P₁) resonance line in Zn-Hg vapor mixtures. The stimulated emission cross-section determined for ZnHg¹ (2.3 × 10^?19 cm²) and the excimer's low rate of quenching by Hg (5.5 × 10^?15 cm³ s^?1) make it attractive for future energy-storage laser research.     

Deep levels in gallium arsenide by capacitance methods

The three capacitance methods, i.e., TSCAP, PHCAP, and transient capacitance measurements, are applied to determine electronic properties of deep levels inn-GaAs. In the boat-grown wafer detected are the 0.30 eV electron trap withN _T =3.6×10¹⁶ cm^?3 andS _n =2.4×10^?15 cm², and the 0.75 eV electron trap withN _T =2.0×10¹⁶ cm^?3 andS _n =1.2×10^?14 cm². In the epitaxial wafer, the 0.45 eV hole trap is detected withN _T >1.5×10¹³ cm^?3 andS _p =1.4×10^?14 cm² as well as the 0.75 eV electron trap withN _T =2.4×10¹³ cm^?3.