Growth and characterization of 4‐Aminopyridinium‐4‐nitro phenolate single crystals

Organic optical material 4‐Aminopyridinium‐4‐nitro phenolate (4AP4NP) has been synthesized, and single crystals of size 20 x 14 x 6 mm³ have been grown from acetone solvent at room temperature by solvent evaporation technique. The grown crystals have been characterized by X‐ray diffraction to determine the cell parameters, and by FT‐IR technique to confirm the formation of the expected compound. The crystal belongs to monoclinic crystal system with space group P2₁/a.The structural perfection of the grown crystals has been analyzed by high‐resolution X‐ray diffraction (HRXRD) rocking curve measurements. The thermal stability of the compound has been determined by TG‐DTA curves. The transmittance of 4AP4NP has been used to determine the refractive index n; the extinction coefficient K and both the real ε_r and imaginary ε_i components of the dielectric constant as functions of photon energy. The optical band gap of 4AP4NP is 2.4 eV. The dielectric and mechanical behavior of the specimen was also studied. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical and dielectric studies on succinic acid single crystals

Single crystals of ferroelectric succinic acid (SA) with very high degree of transparency were grown from aqueous solution by slow evaporation technique. Single crystal X‐ray diffraction analysis reveals that the crystal belongs to monoclinic system with the space group P2₁/c. Some physical parameters have been determined for grown crystal. The optical absorption study reveals the transparency of the crystal in the entire visible region and the cut off wave length was found to be 240 nm. The optical band gap is found to be 3.75 eV. The dependence of extinction coefficient (k) and refractive index (n) on the wavelength have also been reported. The presence of functional groups was determined qualitatively by using Fourier transform infrared spectrum (FTIR) from which force constant has been calculated. The dielectric constant was also studied as a function of frequency at room temperature and electrical conductivity has been calculated from the Cole‐Cole plot. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Vibrational,optical and microhardness studies of trimethoprim DL ‐malate

Trimethoprim malate, an organic crystal, has been synthesized using slow evaporation method from its aqueous solution. Structural, optical and the mechanical properties of the grown crystal have been investigated by various characterization techniques which include FTIR spectra, single crystal XRD, UV‐Vis spectra and Vickers microhardness testing. The structure of the compound predicted by analysing the recorded FTIR spectrum compliments the structure determined using single crystal X‐ray diffraction. Single crystal X‐ray diffraction study reveals that the crystals are monoclinic [P2₁/c, a=12.9850 Å, b=9.3038 Å, c=15.6815 Å and β=111.065°]. The UV‐Vis spectrum exhibits maximum transparency (98%) for a wide range suggesting the suitability of the title compound for optical applications. The optical constants have been calculated and illustrated graphically. Microhardness tests have been performed on the cystal under study and the Vicker hardness number has been calculated. The work hardening coefficient is found to be 2.85 which suggest that the crystal belongs to the family of soft materials. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical properties of the complex perovskite ceramic oxide Ba2YZrO6‐d

Nanocrystalline Ba₂YZrO_6‐dhas been successfully synthesized through a single step auto‐ignition combustion route. The samples were analyzed by powder X‐ray diffraction, transmission electron microscopy and Ultraviolet‐Visible spectroscopy. The XRD analysis revealed that the material has an ordered complex cubic perovskite structure. The basic optical properties and optical constants of the as‐prepared nanopowder of Ba₂YZrO_6‐dhave been reported for the first time. The spectral analysis revealed that the material is a wide band gap direct transition semiconductor with band gap of 3.70 eV at room temperature. The poor transmittance in ultraviolet but good transmittance in visible‐near infrared regions make the material potentially important for poultry protection and warming coatings, solar control, antireflection coatings and window layer in solar cells. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical properties of thermally evaporated CdS thin films

CdS thin films of varying thicknesses were deposited on cleaned glass substrates at room temperature by thermal evaporation technique in a vacuum of about 2 x 10^‐5 torr. UV‐VIS spectra of the films were studied using the optical transmittance measurements which were taken in the spectral region from 300 nm to 1100 nm. The absorbance and reflectance spectra of the films in the UV‐VIS region were also studied. Optical constants such as optical band gap, extinction coefficient, refractive index, optical conductivity and complex dielectric constant were evaluated from these spectra. All the films were found to exhibit high transmittance (∼ 60 ‐ 93 %), low absorbance and low reflectance in the visible/near infrared region from ∼ 500 nm to 1100 nm. The optical band gap energy was found to be in the range 2.28 – 2.53 eV. All the films annealed at 300°C for 4 hours in vacuum (∼ 10^‐2 torr) showed a decrease in the optical transmittance with its absorption edge shifted towards the longer wavelength, leading to the result that the optical band gap decreases on annealing the films. Also, on annealing crystallinity of the films improves, resulting in decrease in the optical transmittance. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal structure and characterization of a novel organic optical crystal: 4‐chloro‐3‐nitrobenzophenone

Single crystals of a novel organic material, 4‐Chloro‐3‐Nitrobenzophenone (4C3N) were grown from acetone solution employing the technique of controlled evaporation. 4C3N belongs to the Orthorhombic system, with a = 12.9665(11) Å, b = 7.4388(6) Å, c = 24.336(2) Å, α = β = γ = 90°. FT‐IR study has been performed to identify the functional groups. The transmittance of 4C3N has been used to calculate the refractive index n; the extinction coefficient K and both the real ε_r and imaginary ε_i components of the dielectric constant as functions of photon energy. The optical band gap of 4C3N is 2.7 eV. Thermo gravimetric analysis and differential thermal analysis have also been carried out, and the thermal behavior of 4C3N crystal has been studied. The mechanical properties have been investigated. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Investigation of optical band gap in potassium acid phthalate single crystal

Optical absorption in photonic crystals of potassium acid phthalate has been measured at room temperature, from which the band gap has been determined and the optical band gap was calculated by using absorption spectrum. The analysis of absorption coefficient in the absorption region reveals a direct band gap of 3.70 eV. Further this study includes the theoretical calculations to determine the optical constant of the material and a technique for photonic band gap tuning which is minimally required to develop the optoelectronic device. It was confirmed that potassium acid phthalate crystal has maximum transparency in the entire visible region and hence it exhibits industrial application oriented properties. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical and structural properties of lead iodide thin films prepared by vacuum evaporation method

Thermally processed lead iodide (PbI₂) thin films were prepared by the vacuum evaporation method in a constant ambient. Measured thickness of the film was verified analytically from the optical transmittance data in a wavelength range between 300 and 1600 nm. From the Tauc relation for the non‐direct inter band transition, the optical band gap of the film was found to be 2.58 eV for film thickness 300 nm. X‐ray diffraction analysis confirmed that PbI₂ films are polycrystalline, having hexagonal structure. The low fluctuation in Urbach energy indicates that the grain size is quite small. The present findings are in agreement with the other results. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Spray deposition and characterization of undoped and In‐doped tin disulphide thin films

Undoped and Indium doped tin disulphide (SnS₂) thin films had been deposited onto glass substrates at T_s = 300 °C using spray pyrolysis technique under atmospheric pressure with stannous chloride, indium chloride and thiourea as precursors. The structural, optical and electrical properties of the deposited films were characterized. The XRD pattern revealed that the undoped and doped films had preferred orientation along (002) plane with hexagonal structure. FESEM micrographs had shown that morphologies of the films changed with indium doping. Optical constant such as refractive index (n), extinction coefficient (k), real and imaginary parts of dielectric constants were evaluated from transmittance and reflectance spectra in UV‐Visible spectroscopy. The optical absorption data were used to determine the band gap energy and it was found to be 2.75 eV for undoped and 2.50 eV for indium doped films respectively. The room temperature dark resistivity was found to be 4.545 × 10³ Ω‐cm and 5.406 × 10³ Ω‐cm for undoped and In‐doped films respectively.     

Growth and characterization of thiourea mixed cadmium – lead chloride – a nonlinear optical crystal

Nonlinear optical (NLO) crystal of thiourea mixed cadmium–lead chloride dihydrate Cd[(PbCl₃)(NH₂CSNH₂)].2H₂O (TCCPC) have been grown in solution by slow evaporation technique at room temperature. The powder X‐ray diffraction pattern has been recorded and indexed. The UV‐Vis‐NIR transmittance and FT‐IR spectrum have been recorded in the range 200‐1090 nm and 400‐4000 cm^‐1, respectively. The lower cut‐off wavelength is 280 nm in the UV region, which is higher than that of pure Cd(PbCl₃) (CCPC) crystal. The presence of functional groups has been confirmed by FT‐IR analysis. The TCCPC crystal was characterized by SEM and EDX spectrum. The second harmonic generation (SHG) of the thiourea mixed cadmium–lead chloride (TCCPC) crystal is demonstrated by the Kurtz Perry method using Nd:YAG laser and the results confirm that the grown crystal is roughly three times more efficient than ADP. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,electrical, thermal and optical properties of the nonlinear optical crystal L‐Arginine Fluoride

Single crystals of L‐Arginine Fluoride (LAF) have been grown by the slow evaporation technique, and the crystalline perfection was studied by HRXRD. Optical absorption studies reveal the lower cut off wavelength (280 nm) and the band gap (5.1 eV). The dielectric constant and dielectric loss have been measured as a function of frequency (42 Hz–5 MHz) and temperature (307‐368K) and the activation energy is 77 μeV. The thermal transport properties such as thermal conductivity (0.88 ± 0.02 W/mK) and specific heat capacity (482±24 J/kg/K) have been estimated by the photopyroelectric technique. The nonlinear refractive index n₂, is found to be of the order of 10⁻¹³ cm²/W by the Z‐scan technique.     

Optical constants of DC magnetron sputtered titanium dioxide thin films measured by spectroscopic ellipsometry

Optical constants of DC magnetron sputtered TiO₂ thin film have been determined by Spectroscopic Ellipsometry in the photon energy range 1.2 to 5.5 eV at room temperature. The measured dielectric‐function spectra reveal distinct structures at energies of the E1, E1 + Δ1 and E2 critical points are due to interband transitions. The root mean square roughness of the magnetron sputtered TiO₂ thin films evaluated by ex‐situ atomic force microscopy is 5.8 nm. The Dielectric constant values were found to be substantially lower than those for the bulk TiO₂. The dielectric related Optical constants, such as the refractive index, extinction coefficient, absorption coefficient and normal incidence of reflectivity determined from the spectroscopic ellipsometry data are presented and analyzed. The optical constants of the films were also determined using the optical transmittance measurements and the results were discussed. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO2 films

Mixed ZnO‐ZrO₂ films have been obtained by sol‐gel technology. By using spin coating method, the films were deposited on Si and glass substrates. The influence of thermal annealings (the temperatures vary from 400 °C to 750 °C) on their structural properties has been studied. The structural behavior has been investigated by the means of XRD and FTIR techniques. The results revealed no presence of mixed oxide phases, the detected crystal phases were related to the hexagonal ZnO and to crystalline ZrO₂. The sol‐gel ZnO‐ZrO₂ films showed polycrystalline structure with a certain degree of an amorphous fraction. The optical transmittance reached 91% and it diminished with increasing the annealing temperatures. The optical properties of the sol‐gel ZnO‐ZrO₂ films, deposited on glass substrates are excellent with high transparency and better then those of pure ZrO₂ films, obtained at similar technological conditions. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth,optical, mechanical and electrical properties of organic NLO material γ‐glycine

Single crystals of organic non‐linear optical material, γ‐glycine have been grown by gel method for the first time. The γ‐phase is confirmed by single crystal XRD. The presence of various functional groups of γ‐glycine are confirmed by FTIR. The UV‐Vis‐NIR spectrum reveals the high percentage of transmission of the sample in the entire visible region. The SHG of γ‐glycine is confirmed by Kurtz powder technique. TGA‐DTA studies indicate that the crystal is structurally stable upto 170 °C. Microhardness investigations are conducted on the grown crystals. The dielectric constant measurements are carried out and the nature of variation of dielectric constant ε′ and dielectric loss D in the frequency range of 50 Hz to 5 MHz is studied and reported. Photoconductivity studies of γ‐glycine crystals revealed the negative photoconducting nature. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of substrate temperature on the optical constants of zincphthalocyanine thin films

The influence of the film thickness and substrate temperature on optical constants of the vacuum evaporated ZincPhthalocyanine (ZnPc) thin films have been reported in this paper. The direct and allowed optical band gap energy has been evaluated from the (αhυ)² vs. (hυ) plots. The optical constants such as extinction coefficient (k_f) and refractive index (n) have been evaluated from the transmittance values and the observed results strongly dependent on substrate temperature and film thickness. The low values of the refractive index have been observed for the films prepared at T_s=200°C. The change in crystallanity and phase transformation affect the optical constants and the lower values of the optical constants will leads to the good quality of the ZnPc thin films. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of cadmium magnesium tetra thiocyanate crystals

Cadmium Magnesium Tetra Thiocyanate, CdMg(SCN)₄, [CMTC] belongs to bimetallic thiocyanate complexes. CMTC crystals has been grown by solution growth technique at room temperature. The morphologies of the grown crystals are identified by single crystal analysis. Also the Powder X‐ray Diffractogram of the crystal has been recorded and the various planes of reflection are identified. The title compound crystallizes under triclinic structure with lattice parameters a = 10.0976 Å, b = 7.5015 Å, c = 5.7720 Å and β = 90.2135°. The presence of magnesium and cadmium in the grown crystals were confirmed through Atomic Absorption Spectroscopy. The grown crystals are analysed qualitatively by Fourier Transform Infrared (FTIR) and Fourier Transform Raman spectral measurements. The transmittance spectrum of the crystal in the UV‐Visible region has been recorded and analysed. The dielectric measurements for the crystals were carried out in the microwave region. The thermal stabilities of the crystals were studied by using different thermal analyses like Thermo Gravimetric Analysis (TGA), Differential Thermal Analysis (DTA) and Differential Scanning Calorimetry (DSC). (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and Characterisation of (CuInTe2)1‐x(2 ZnTe)x Solid Solution Single Crystals

The crystal structure as well as the optical properties in the band gap region of (CuInTe₂)_1‐x(2 ZnTe)_x solid solution single crystals grown by directional freezing have been studied. The lattice constants exhibit a linear dependence on crystal composition. The chalcopyrite‐sphalerite phase transition was observed between x = 0.3 and x = 0.4°. The variation of the band gap with respect to crystal composition can be described by a quadratic expression.     

Optical characterization of thermally evaporated thin CdO films

Cadmium Oxide films have been prepared by vacuum evaporation method on a glass substrate at room temperature. Detailed structural, optical, and electrical properties of the films are presented at different annealing temperatures. The crystal structure of the samples was studied by X‐ ray diffraction. The spectral absorption coefficient of the CdO film at the fundamental absorption region (450‐650nm) was determined using the spectral data of transmittance. The direct and indirect band gap energies were determined and found to be 2.33 eV and 1.95 eV respectively. The third order optical nonlinearities χ(3) of CdO films has been measured used the z‐can technique. The real and imaginary parts of χ(3) have been measured at 514 nm and found to be 1.7x10^‐3 esu and 3.0x10^‐3 esu, respectively. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The effect of oxygen partial pressure on physical properties of nano‐crystalline silver oxide thin films deposited by RF magnetron sputtering

Nano‐crystalline silver oxide films were deposited on glass and silicon substrates held at room temperature by RF magnetron sputtering of silver target under different oxygen partial pressures. The influence of oxygen partial pressure on the structural, morphological, electrical and optical properties of deposited films was investigated. Varying oxygen partial pressure during the sputter deposition leads to changes of mixed phase of Ag₂O and Ag to a single phase of Ag₂O and to AgO. The X‐ray diffraction and X‐ray photoelectron spectroscopy results showed the formation of single phase Ag₂O with cubic structure at oxygen partial pressures of 2x10^‐2 Pa while the films deposited at higher oxygen partial pressure of 9x10^‐2 Pa showed the formation of single phase of AgO with monoclinic structure. Raman spectroscopic studies on the single phase Ag₂O showed the stretching vibration of Ag‐O bonds. Single‐phase Ag₂O films obtained at oxygen partial pressure of 2x10^‐2 Pa were nano‐crystalline with crystallite size of 20 nm and possessed an electrical resistivity of 5.2x10^‐3 Ωcm and optical band gap of 2.05 eV. The films deposited at higher oxygen partial pressure of 9x10^‐2 Pa were of AgO with electrical resistivity of 1.8x10^‐2 Ωcm and optical band gap of 2.13 eV. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical band gap of zinc nitride films prepared by reactive rf magnetron sputtering

Polycrystalline Zn₃N₂ films are prepared on Si and quartz glass substrates by RF magnetron sputtering at room temperature. The structural and optical properties are studied by X‐ray diffraction and double beam spectrophotometer, respectively. X‐ray diffraction indicates that the Zn₃N₂ films deposited on Si and quartz glass substrates both have a preferred orientation in (321) and (442), also are cubic in structure with the lattice constant a=0.9847 and 0.9783 nm, respectively. The absorption coefficients as well as the film thickness are calculated from the transmission spectra, and their dependence on photon energy is examined to determine the optical band gap. Zn₃N₂ is determined to be an indirect‐gap semiconductor with the band gap of 2.11(2) eV. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)