Magnetization reversal in perpendicular exchange-biased multilayers

Co/Pt multilayers with perpendicular magnetic anisotropy exhibit an exchange bias when covered with an IrMn layer. The exchange bias field, which is about 7 mT for 3 Co/Pt bilayer repetitions and a Co layer thickness of 5 Å, can be increased up to 16.5 mT by the insertion of a thin Pt layer at the Co/IrMn interface. The interfacial magnetic anisotropy of the Co/IrMn interface (KSCo/IrMn =-0.09 mJ/m2) favours in-plane magnetization and tends to tilt the Co spins away from the film normal. Dynamical measurements of the magnetization reversal process reveal that both thermally activated spin reversal in the IrMn layer and domain wall nucleation in the Co/Pt multilayer influence the interfacial spin structure and therefore the strength of the perpendicular exchange bias field.     

In plane to out of plane magnetic reorientation transition in partially ordered FePd thin films

It is demonstrated that perpendicular magnetic anisotropy may be obtained with a room temperature growth process in ordered (FePd) alloys. Indeed, using atomic layer by atomic layer epitaxy, a partial chemical ordering into the L1₀ structure is obtained, with a corresponding intermediate perpendicular anisotropy (). These samples provide an appropriate template for the study of the magnetic reorientation from in plane to out of plane magnetization upon layer's thickness increase. VSM, transverse Kerr measurements and magnetic force microscopy have been used in order to determine the relevant magnetic parameters and the occurrence of the reorientation transition. Received 13 October 1998 and Received in final form 5 February 1999     

Visualization of the Barkhausen effect by magnetic force microscopy

By visualization of the Barkhausen effect using magnetic force microscopy we are able to provide detailed information about the physical principles that govern the magnetization reversal of a granular ferromagnetic thin film with perpendicular anisotropy. Individual Barkhausen volumes are localized and distinguished as either newly nucleated or grown by domain wall propagation. The Gaussian size distribution of nucleated Barkhausen volumes indicates an uncorrelated random process, while grown Barkhausen volumes exhibit an inverse power law distribution, which points towards a critical behavior during domain wall motion.     

Magnetization reversal in a preferred oriented (111) L1(0) FePt grown on a soft magnetic metallic glass for tilted magnetic recording

L1(0) FePt is an important material for the fabrication of high density perpendicular recording media, but the ultrahigh coercivity of L1(0) FePt restricts its use. Tilting of the magnetic easy axis and the introduction of a soft magnetic underlayer can solve this problem. However, high temperature processing and the requirement of epitaxial growth conditions for obtaining an L1(0) FePt phase are the main hurdles to be overcome. Here, we introduce a bilayered magnetic structure ((111) L1(0) FePt/glassy Fe(71)Nb(4)Hf(3)Y(2)B(20)/SiO(2)/Si) in which the magnetic easy axis of L1(0) FePt is tilted by ~36° from the film plane and epitaxial growth conditions are not required. The soft magnetic underlayer not only promotes the growth of L1(0) FePt with the preferred orientation but also provides an easy cost-effective micro/nanopatterning of recording bits. A detailed magnetic characterization of the bilayered structure in which the thickness of (111) L1(0) FePt with the soft magnetic Fe(71)Nb(4)Hf(3)Y(2)B(20) glassy underlayer varied from 5 to 60 nm is carried out in an effort to understand the magnetization switching mechanism. The magnetization switching behavior is almost the same for bilayered structures in which FePt layer thickness is >10 nm (greater than the domain wall thickness of FePt). For FePt film ~10 nm thick, magnetization reversal takes place in a very narrow field range. Magnetization reversal first takes place in the soft magnetic underlayer. On further increase in the reverse magnetic field, the domain wall in the soft magnetic layer compresses at the interface of the hard and soft layers. Once the domain wall energy becomes sufficiently large to overcome the nucleation energy of the domain wall in L1(0) FePt, the magnetization of the whole bilayer is reversed. This process takes place quickly because the domain walls in the hard layer do not need to move, and the formation of a narrower domain wall may not be favorable energetically. Our results showed that the present bilayered structure is very promising for the fabrication of tilted bit-patterned magnetic recording media.     

Anisotropy of domain wall resistance

The resistive effect of domain walls in FePd films with perpendicular anisotropy was studied experimentally as a function of field and temperature. The films were grown directly on MgO substrates, which induces an unusual virgin magnetic configuration composed of 60 nm wide parallel stripe domains. This allowed us to carry out the first measurements of the anisotropy of domain wall resistivity in the two configurations of current perpendicular and parallel to the walls. At 18 K, we find 8.2% and 1.3% for the domain wall magnetoresistance normalized to the wall width (8 nm) in these two respective configurations. These values are consistent with the predictions of Levy and Zhang.     

Magnetic force microscopy studies of domain walls in nickel and cobalt films

A magnetic force microscopy is used to examine the domain walls in nickel and cobalt films deposited by argon ion sputtering. Thin nickel films deposited at high substrate temperatures exhibit coexistent Bloch and Neel walls. Films grown at room temperature display alternative Bloch lines with cap switches. These films agglomerate to form grains after annealed at high temperatures. The film composed of larger grains behaves better nucleation implying magnetic domains of closure, while the film composed of smaller grains exhibits more defects implying alternative Bloch lines. We have also observed domain displacements and cap switches, which occur due to precipitation of particles in small grain size films. Stripe domains are observed for film thicknesses larger than 100 nm. They become zigzag cells when an external field of 1.5 T is applied perpendicular to the surface of the films. This experiment indicates that the domain sizes in thin films and the strip widths for thick films both depend on the square-root of the film thickness, which varies from 5 to 45 nm and from 100 to 450 nm, respectively.     

High resolution measurement and modelling of magnetic domain structures in epitaxial FePd (0 0 1) L10 films with perpendicular magnetisation

Magnetic domain structures in two 50 nm thick chemically-ordered FePd (0 0 1) epitaxial films with different perpendicular anisotropies have been studied using Lorentz microscopy. Domain and domain wall structures vary significantly according to the magnitude of the anisotropy. For lower anisotropy films, a stripe domain structure with a period of ≈100 nm is formed in which there is a near-continuous variation in orientation of the magnetisation vector. By contrast, in the film with higher anisotropy, a maze-like domain structure is supported. The magnetisation within domains is perpendicular to the film plane and adjacent domains are separated by narrow walls, less than 20 nm wide. Micromagnetic modelling is generally in good quantitative agreement with experimental observations and provides additional information on the domain wall structure.     

Ordering intermetallic alloys by ion irradiation: a way to tailor magnetic media

We show how, combining He ion irradiation and thermal mobility below 600 K, the transformation from chemical disorder to order in thin films of an intermetallic ferromagnet (FePd) may be triggered and controlled. Kinetic Monte Carlo simulations show that the initial directional short range order determines the transformation. Magnetic ordering perpendicular to the film plane was achieved, promoting the initially weak magnetic anisotropy to the highest values known for FePd films. Applications to ultrahigh density magnetic recording are suggested.     

具有条纹磁畴结构的NiFe薄膜的制备与磁各向异性研究

具有条纹磁畴结构的磁性薄膜表现出面内转动磁各向异性,对于解决高频电子器件的方向性问题起着至关重要的作用.本文采用射频磁控溅射的方法,研究了NiFe薄膜的厚度、溅射功率密度、溅射气压等制备工艺参数对条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律.研究发现,在功率密度15.6 W/cm~2与溅射气压2 mTorr(1 Torr=1.33322×102Pa)下生长的NiFe薄膜,表现出条纹磁畴的临界厚度在250 nm到300 nm之间.厚度为300 nm的薄膜比250 nm薄膜的垂直磁各向异性场增大近一倍,从而磁矩偏离膜面形成条纹磁畴结构,并表现出面内转动磁各向异性.高溅射功率密度可以降低薄膜出现条纹磁畴的临界厚度.在相同功率密度15.6 W/cm~2下生长300 nm的NiFe薄膜,随着溅射气压由2 mTorr增大到9 mTorr,NiFe薄膜的垂直磁各向异性场逐渐由1247.8 Oe(1 Oe=79.5775 A/m)增大到3248.0 Oe,面内转动磁各向异性场由72.5 Oe增大到141.9 Oe,条纹磁畴周期从0.53μm单调减小到0.24μm.NiFe薄膜的断面结构表明柱状晶的形成是表现出条纹磁畴结构的本质原因,高功率密度下低溅射气压有利于柱状晶结构的形成,表现出规整的条纹磁畴结构,高溅射气压会导致柱状晶纤细化,面内转动磁各向异性与面外垂直磁各向异性增强,条纹磁畴结构变得混乱.     

Dynamics of magnetic domain wall motion after nucleation: dependence on the wall energy

The dynamics of magnetic domain wall motion in the FeNi layer of a FeNi/Al2O3/Co trilayer has been investigated by a combination of x-ray magnetic circular dichroism, photoelectron emission microscopy, and a stroboscopic pump-probe technique. The nucleation of domains and subsequent expansion by domain wall motion in the FeNi layer during nanosecond-long magnetic field pulses was observed in the viscous regime up to the Walker limit field. We attribute an observed delay of domain expansion to the influence of the domain wall energy that acts against the domain expansion and that plays an important role when domains are small.     

Recent results in magnetic force microscopy

We present domain wall images obtained by using Magnetic Force Microscope (MFM) on magnetic samples like: double layer of permalloy alloy, magnetic hard disk, BaFe₁₂O₁₉ single crystal and YGdTmGa/YSmTmGa magnetic garnet. We have imaged topography and magnetic forces of the same area. The Fe double- and single-layer thin film tips have been prepared to achieve high sensitivity (10^–12N) and high resolution of MFM.     

Angular dependence of domain wall resistivity in artificial magnetic domain structures

We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behavior of this model system confirms the intrinsic domain wall origin of the magnetoresistance, and systematic studies using domains patterned at various angles to the current flow are excellently described by an angular-dependent resistivity tensor containing perpendicular and parallel domain wall resistivities. We find that the latter are fully consistent with Levy-Zhang theory, which allows us to estimate the ratio of minority to majority spin carrier resistivities, rho downward arrow/rho upward arrow approximately 5.5, in good agreement with thin film band structure calculations.     

Instability of a thin layer of a magnetic fluid in a perpendicular magnetic field

The instability and disintegration of a thin layer of a magnetic fluid in a perpendicular magnetic field are considered. New experimental findings for the dependence of the resulting surface structure of the layer on the external magnetic field and thickness of the layer are reported. Light diffraction by such structures is studied. Experimental data are compared with today’s theoretical concepts.     

Thickness dependence of magnetic domain formation in La0.6Sr0.4MnO3 epitaxial thin films studied by XMCD-PEEM

We have used photoelectron emission microscopy (PEEM) and X-ray magnetic circular dichroism (XMCD) to study the effect of thin film thickness on the magnetic domain formation in La_0.6Sr_0.4MnO₃ samples that were epitaxially grown on stepped SrTiO₃ (0 0 1) substrates. The magnetic image exhibited a stripe structure elongated along the step direction, irrespective of film thickness, suggesting that uniaxial magnetic anisotropy induced by step-and-terrace structures plays an important role in the magnetic domain formation. Additional domains evolved gradually with increasing film thickness. In these domains, the direction of magnetization differed from the step direction due to biaxial magneto-crystalline anisotropy. The evolution of additional magnetic domains with increasing film thickness implies that a competition exists between the two anisotropies in LSMO films.     

Field sweep rate dynamics in magnetic tunnel junctions

The dynamical behavior of magnetic tunnel junctions (MTJs) was investigated by varying the magnetic field sweep rate from 0.01 mT/s to 10 T/s in a magneto optical Kerr effect set-up. The bias fields of the pinned and free ferromagnetic electrodes were found to drastically decrease above a field sweep rate of 1 T/s. This decrease in the bias fields coincides with a change in the magnetization reversal process from domain wall motion at low-field sweep rates to domain nucleation at high-field sweep rates. The nucleation of inverse domains in the ferromagnetic layer changes the interfacial spin structure of the antiferromagnetic layer and therefore the magnitude of the exchange bias effect. Furthermore, the nucleation of domains induces a discontinuous magnetic charge density at the tunnel barrier interfaces and this reduces the interlayer coupling between the two ferromagnetic electrodes of the MTJ.     

强磁场对不同厚度Fe80Ni20薄膜的微观结构及磁性能的影响

有无6 T强磁场条件下利用分子束气相沉积方法制备了不同厚度的Fe₈₀Ni₂₀薄膜. 研究发现, 薄膜的面内矫顽力随厚度增加而降低且符合Neel理论; 矩形比随厚度的增加先快速增大后缓慢降低; 6 T磁场抑制了颗粒团聚及异常长大, 并降低了薄膜表面的粗糙度, 这使薄膜的矫顽力要小于无磁场作用的薄膜, 矩形比大于无磁场作用的薄膜; 而且薄膜在垂直于基片表面的6 T磁场作用下由0 T下的面内磁各向异性转变为磁各向同性. 关键词： 强磁场 气相沉积 微观结构 磁性能     

Effect of film morphology on the magnetic properties for Nd-Fe-B thin films

The microstructure and magnetic properties of Nd-Fe-B thin films with a particulate structure were investigated. The nominal thickness of the Nd-Fe-B layer (t_N) was varied from 2 to 50 nm on a (0 0 1) Mo buffer layer. The films were grown with their c-axis perpendicular to the plane, and the morphology of the film with t_N=2 nm was shown to be particulate from an atomic force microscope image. The slope of the initial magnetization curve became steeper by increasing the t_N value in the initial magnetization curve, indicating that the film morphology composed of single domain particles changed to that of multi-domain particles with growth. The film with t_N=8 nm, which had a structure consisting of a mixture of single and multiple domain particles, showed the maximum value of the coercivity measured in the direction perpendicular to the film plane (H_c) as 19.5 kOe.     

引入纳米氧化层的CoFe/Pd双层膜结构中增强的垂直磁各向异性研究

制备了CoFe/Pd双层结构的界面处或CoFe层 内部引入纳米氧化层后的系列薄膜. 研究结果显示, 引入纳米氧化层后, 可以使薄膜的磁各向异性在退火后从面内转到垂直膜面方向. 并且对于在CoFe层内部引入纳米氧化层的这类样品, 其强烈的垂直磁性可以在相当宽的有效磁性层厚度范围内(1.2-2 nm)维持. 在保持垂直磁性的前提下, 这种特殊的双层膜结构中CoFe磁性层厚度比常规CoFe/Pd 多层膜中的CoFe层厚度至少多出1.4 nm. 本文的研究有助于制备出具有较高热稳定性的垂直磁性器件电极.     

Thickness dependence of magnetic anisotropic properties of FeCoNd films

The magnetic FeCoNd films with thickness (t) from 50 to 166 nm were fabricated by RF magnetron co-sputtering at ambient condition. The amorphous structures of all of the films were investigated by X-ray diffraction and transmission electron microscopy. A spin reorientation transition from in-plane single domain state to out-of-plane stripe domain state was observed as a function of t. When t is below a critical thickness, magnetic moments lie in the film plane corresponding to in-plane single domain state because of the strong demagnetization energy. However, when t is increased, out-of-plane stripe domain structure was developed due to a dominated perpendicular magnetic anisotropy. Scanning electron microscopy data indicate that the perpendicular anisotropy, which is responsible for the formation of stripe domains, may result from the shape effect of the columnar growth of the FeCo grains.     

Suppression of the domain structure in uniaxial ferromagnetic films with a superconducting coating

Specific models of domain walls are used to investigate conditions for the single-domain state and quasi-single-domain states in structures with magnetic materials having a quality factor higher than one. It is shown that the critical thickness of the magnetic film in a tangentially magnetized system decreases monotonically as the magnetizing field increases from zero to the transition from the collinear to the homogeneous angular phase and then increases monotonically with increasing external field. In a thin isolated magnetic film, the size of the domains increases exponentially with decreasing thickness. This dependence is logarithmic near the transition to the single-domain state for a film coated on two sides and obeys a power law for a film coated on one side. The establishment of a single-domain state and characteristic features in the asymptotic behavior of the domain structure in magnetic films with and without coatings can be attributed to differences in the asymptotic behavior of the field of a single domain wall. Fiz. Tverd. Tela (St. Petersburg) 40, 1068–1074 (June 1998)