This paper studies the effects of different gas compositions on the growth of multi-walled carbon nanotube (MWCNT) films by using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) method. The Raman spectrum was employed to explore the composition of the MWCNT films grown under different mixtures of C3H8 and H2. The results showed that the optimum relative intensity ratio of the D band to G band (i.e., ID/IG) is 2 for the cases considered in this study. In addition, the morphology and microstructure of the MWCNTs were examined by field emission scanning electron microscopy (FE-SEM) and field emission gun transmission electron microscopy (FEG-TEM). Furthermore, atomic force microscopy (AFM) and scanning thermal microscopy (SThM) were used to study the surface topography and thermal properties of the MWCNTs. 相似文献
The effects of vacuum annealing and oxidation in air on the structure of multi-walled carbon nanotubes (MWCNTs) produced by a large-scale catalytic chemical vapor deposition (CCVD) process are studied using Raman spectroscopy and transmission electron microscopy (TEM). A detailed Raman spectroscopic study of as-produced nanotubes has also been conducted. While oxidation in air up to 400°C removes disordered carbon, defects in tube walls are produced at higher temperatures. TEM reveals that MWCNTs annealed at 1,800°C and above become more ordered than as-received tubes, while the tubes annealed at 2,000°C exhibit polygonalization, mass transfer and over growth. The change in structure is observable by the separation of the Raman G and D′ peaks, a lower R-value (ID/IG ratio), and an increase in the intensity of the second order peaks. Using wavelengths from the deep ultraviolet (UV) range (5.08 eV) extending into the visible near infrared (IR) (1.59 eV), the Raman spectra of MWCNTs reveal a dependence of the D-band position proportional to the excitation energy of the incident laser energies. 相似文献
Mathematically we consider aC*-algebra
, acted upon by the groupT of space-translations, which has an asymptotic abelian property. We analyse invariant states over
. Physically this programme can be considered as a kinematical study of equilibrium states in statistical mechanics. Each invariant state can be uniquely decomposed into elementary invariant states (E-states). These elementary states have, amongst other characteristics, the physical property that space-averages of local observables are constants in the corresponding representations. In anE-state the discrete spectrum SD of space-translations is additive which gives rise to the classificationEI,EII, andEIII corresponding to the three possibilities that SD contains one point, a lattice of points, or a set with accumulation points. AnEII-state can be uniquely decomposed into states (L-states) having a symmetry with respect to a closed subgroupTL of (SD and TL are reciprocal lattices).L-states have properties with respect toTL analogous to the properties ofEI-states with respect toT. The decomposition intoL-states is the inverse process of homogenizing a lattice state by smearing it over a lattice distance. The mathematical methods which we employ have more general applications. 相似文献
As an important candidate for novel infrared semiconductor lasers, the optical properties of GaAsSb‐based multiple quantum wells (MQWs) are crucial. The temperature‐ and excitation power‐dependent photoluminescence (PL) spectra of the GaAs0.92Sb0.08/Al0.2Ga0.8As MQWs, which were grown by molecular beam epitaxy, were investigated and are detailed in this work. Two competitive peaks were observed from 40 K to 90 K. The peak located at the low‐energy shoulder was confirmed to be localized states emission (LE) and the high‐energy side peak was confirmed to be free‐carrier emission by its temperature‐dependent emission peak position. It is observed that the LE peak exhibited a blueshift with the increase of laser excitation power, which can be ascribed to the band filling effect of localized states. Our studies have great significance for application of GaAsSb‐based MQWs in infrared semiconductor lasers.
Low-temperature photoluminescence (PL) of unactivated KDP crystals under selective synchrotron excitation is for the first time measured with subnanosecond time resolution. Time-resolved PL (2–6 eV) and PL excitation (4–35 eV) spectra, as well as PL kinetics, are measured at 7 K. From the acquired experimental data, luminescent bands related to intrinsic defects of the KDP lattice are identified; in particular, the long-wave band at 2.6 eV is assigned to L defects, and the band at 3.5–3.6 eV is attributed to D defects. An efficient energy transfer over the hydrogen sublattice is shown to take place in KDP at low temperatures. It results in the efficient excitation of L and D center photoluminescence in the fundamental absorption region, at electron transitions to the bottom levels of the conduction band, corresponding to the states of the hydrogen atom. The band gap Eg is evaluated to be 8.0–8.8 eV. 相似文献
A polymer nanohybrid material with enhanced dielectric permittivity was prepared using the fluorine‐containing polyimide (PI) 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride/4,4′‐oxydianiline (6FDA/ODA) as matrix and graphene as conductive filler in our present work. Studies on the dielectric properties of the 6FDA/ODA–graphene nanohybrid films show that the dielectric permittivity (ε) can be significantly enhanced by the layer‐by‐layer structure of graphene and the presence of fluorine also has an important influence on the improvement of ε. The percolation theory and microcapacitor model are used to explain the change of dielectric properties and a percolation threshold fc = 0.0152 (2.45 wt%) was obtained by a linear‐fit calculation.
High-spin states of 155Gd were populated by using the 154Sm(α,3nγ)155Gd reaction at Eα= 33 MeV. γ-γ coincidence, Eγ singles, excitation function, and the DCO ratios were measured. we have identified three intermediate bands with ΔI= 2 feeding the positive yrast band. The bands are interpreted as such candidate bands that are mixed with the negative-parity
ground state band. This observation can provide a plausible explanation for unusually large population of the positive-parity
yrast band observed in a recent Coulomb excitation.
Received: 2 November 1999 相似文献