体心立方多晶膜中应变能密度的各向异性分析

根据弹性理论和多晶膜的屈服强度公式，计算了附着在基体上体心立方多晶薄膜中不同取向晶粒中的应变能密度.结果表明：1）在屈服之前，对Fe和Ta两种薄膜，4个最小的应变能密度对应的晶粒取向依次为（100），（510），（410）和（511）；对Cr，Mo，Nb和V四种薄膜，4个最小的应变能密度对应的晶粒取向依次为（111），（332），（322）和（221）；对W膜，应变能密度与晶粒取向无关.2）在屈服的体心立方多晶膜中，4个最小的应变能密度对应的晶粒取向依次为（100），（111），（110）和（411）.从 关键词： 体心立方多晶薄膜 晶粒取向 应变能密度 织构     

溅射功率对Mo薄膜微结构和性能的影响

 实验采用直流磁控溅射沉积技术在不同溅射功率下制备Mo膜,研究了不同溅射功率下Mo膜的沉积速率、表面形貌及晶型结构,并对其晶粒尺寸和应力进行了研究。利用原子力显微镜观察样品的表面形貌发现随着溅射功率的增加,薄膜表面粗糙度逐渐增大。X射线衍射分析表明薄膜呈立方多晶结构,晶粒尺寸为14.1～17.9 nm;应力先随溅射功率的增大而增大,在40 W时达到最大值(2.383 GPa),后随溅射功率的增大有所减小。     

溅射功率对Mo薄膜微结构和性能的影响

实验采用直流磁控溅射沉积技术在不同溅射功率下制备Mo膜,研究了不同溅射功率下Mo膜的沉积速率、表面形貌及晶型结构,并对其晶粒尺寸和应力进行了研究。利用原子力显微镜观察样品的表面形貌发现随着溅射功率的增加,薄膜表面粗糙度逐渐增大。X射线衍射分析表明薄膜呈立方多晶结构,晶粒尺寸为14.1～17.9 nm;应力先随溅射功率的增大而增大,在40 W时达到最大值(2.383 GPa),后随溅射功率的增大有所减小。     

磁控溅射制备的W,WSi2,Si单层膜和W/Si,WSi2/Si多层膜应力

采用直流磁控溅射技术制备了厚度约100 nm的W,WSi2,Si单层膜和周期约为20 nm,Si膜层厚度与周期的比值为0.5的W/Si,WSi2/Si周期多层膜.利用台阶仪对镀膜前后基底表面的面形进行了测试,计算并比较了不同膜系的应力值.结果表明:W单层膜表现出较大的压应力,而W/Si周期膜则表现为张应力.WSi2单层...     

W过渡层结合界面对金刚石薄膜在WC-6%Co上的附着力的影响

 在微波等离子体化学气相沉积装置中,采用负偏压形核等方法,研究两种不同的W过渡层/基体结合界面对金刚石薄膜与WC-6%Co附着力的影响。采用氢等离子体脱碳、磁控溅射镀W、高偏压碳化等方法,在YG6衬底表面形成化学反应型界面,W膜在碳化时和基体WC连为一体,极大地增加了W膜与基体的附着力,明显优于直接镀钨、碳化形成的物理吸附界面。在高负偏压下碳化,能提高表面粗糙度,增加膜与基体机械钳合,而负偏压形核增加核密度,从而增加膜与基体的接触面积,结果极大地提高了金刚石薄膜的附着力。     

磁控共溅射制备Si掺杂Al薄膜的应力研究

为研制真空紫外与极紫外波段Al基薄膜光学元件,详细研究了Al基薄膜的应力特性及其优化方法。利用应力实时测量装置对共溅射技术制备的5种不同Si掺杂质量分数(0、8.97%、16.49%、28.46%、45.73%)的Al-Si复合薄膜进行应力测试,并采用X射线衍射法表征薄膜的结晶状态。结果表明:Al薄膜中的应力表现为压应力,随着Si在Al中掺杂量的增加,Al中的压应力减小,并且Al的结晶度降低,Al(111)晶向的晶粒尺寸也减小,Al的结晶被抑制;当Si的掺杂质量分数从18.63%增大到31.57%时,Al中的压应力转变为张应力,且张应力随Si掺杂量的增加而进一步增大。本研究为制备Al基滤片、单层膜和多层膜元件提供了技术支撑,在极紫外光刻、同步辐射和天文观测领域具有重要的应用价值。     

纳米粒子在不锈钢衬底MgB2超导膜中的作用

我们用混合物理化学气相沉积法(hybrid physical-chernical vapor deposition简称为HPCVD)以氩气为背景气体,在不锈钢衬底上于不同条件下制备了一批MgB2超导薄膜样品.用扫描电子显微镜获取了相关的SEM图像,并对膜的成分进行了能谱分析(EDX)的.当把不锈钢衬底MgB2超导薄膜弯曲不同角度之后,膜面上均出现了裂纹.裂纹的数量和宽度随弯曲的角度的增大而增加,但是膜始终紧紧地覆着在衬底上不脱落.因此我们可以说覆着在不锈钢衬底上的MgB2超导薄膜具有了很好的韧性.在膜中我们也发现有大量的数十纳米大小的晶粒.这个尺寸的纳米粒子的作用可以用来平衡MgB2膜内结构和表面晶粒的活性之间的相互作用.MgB2纳米粒子的存在是MgB2超导膜表现出韧性的关键角色.     

多晶薄膜屈服强度的一个模型

从位错运动的应力功和应变能关系导出了附着在基体上并有钝化层薄膜的屈服强度公式.该式表明多晶薄膜的屈服强度由两个影响因子（晶粒取向和位错类型）和三个强化因子（钝化层强化，基体强化和晶粒强化）确定.和已报道的实验结果基本一致表明了该模型的合理性. 关键词： 多晶薄膜 屈服强度     

金刚石薄膜的结构特征对薄膜附着性能的影响

在不同实验条件下，用微波等离子体化学气相沉积设备在硬质合金(WC+6%Co)衬底上沉积了 具有不同结构特征的金刚石薄膜.用Raman谱表征薄膜的品质和应力，用压痕实验表征薄膜的 附着性能，考察了薄膜中sp²杂化碳含量、形核密度、薄膜厚度对薄膜附着性能 的影响.结 果表明：sp²杂化碳的缓冲作用使薄膜中sp²杂化碳的含量对薄膜中 残余应力有较大的影 响，从而使薄膜压痕开裂直径统计性地随sp²杂化碳含量的增加而减小；仅仅依 靠超声遗 留的金刚石晶籽提高形核密度并不能有效改变薄膜与硬质合金基体之间的化学结合状况，从 而不能有效提高薄膜在衬底上的附着性能；在薄膜较薄时，晶粒之间没有压应力的存在，开 裂直径并不明显随厚度增加而增加，只有当薄膜厚度增加到一定值，晶粒之间才有较强压应 力存在，开裂直径随厚度的增加而较为迅速地增加. 关键词： 金刚石薄膜 附着性能 2杂化碳')" href="#">sp²杂化碳 成核密度 薄膜厚度     

磁控溅射制备的W，WSi2, Si单层膜和W/Si,WSi2/Si多层膜应力

采用直流磁控溅射技术制备了厚度约100 nm的W,WSi2,Si单层膜和周期约为20 nm,Si膜层厚度与周期的比值为0.5的W/Si,WSi2/Si周期多层膜。利用台阶仪对镀膜前后基底表面的面形进行了测试,计算并比较了不同膜系的应力值。结果表明：W单层膜表现出较大的压应力,而W/Si周期膜则表现为张应力。WSi2单层膜和WSi2/Si周期多层膜均表现为压应力,没有应力突变,应力特性最为稳定。因此,WSi2/Si材料组合是研制大膜对数X射线多层膜较好的材料组合。     

The comparison between CdS thin films grown on Si(111) substrate and quartz substrate by femtosecond pulsed laser deposition

Two kinds of cadmium sulfate (CdS) thin films have been grown at 600 °C onto Si(111) and quartz substrates using femtosecond pulsed laser deposition (PLD). The influence of substrates on the structural and optical properties of the CdS thin films grown by femtosecond pulsed laser deposition have been studied. The CdS thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy. Although CdS thin films deposited both on Si(111) and quartz substrates were polycrystalline and hexagonal as shown by the XRD , SEM and AFM results, the crystalline quality and optical properties were found to be different. The size of the grains for the CdS thin film grown on Si(111) substrate were observed to be larger than that of the CdS thin film grown on quartz substrate, and there is more microcrystalline perpendicularity of c-axis for the film deposited on the quartz substrate than that for the films deposited on the Si substrate. In addition, in the PL spectra, the excitonic peak is more intense and resolved for CdS film deposited on quartz than that for the CdS film deposited on Si(111) substrate. The LO and TO Raman peaks in the CdS films grown on Si(111) substrate and quartz substrate are different, which is due to higher stress and bigger grain size in the CdS film grown on Si(111) substrate, than that of the CdS film grown on the amorphous quartz substrate. All this suggests that the substrates have a significant effect on the structural and optical properties of thin CdS films. PACS 81.15.Fg; 81.05.Ea; 78.20.-e; 78.67.-n; 42.62.-b     

Controlling the surface buckling wrinkles by patterning the material system of hard-nano-film/soft-matter-substrate

Wrinkling and buckling of nano-films on the compliant substrate are always induced due to thermal deformation mismatch.This paper proposes effective means to control the surface wrinkling of thin film on the compliant substrate,which exploits the curvatures of the curve cracks designed on the stiff film.The procedures of the method are summarized as:1)curve patterns are fabricated on the surface of PDMS(Polydimethylsiloxane)substrate and then the aluminum film with the thickness of several hundred nano-meters is deposited on the substrate;2)the curve patterns are transferred onto the aluminum film and lead to cracking of the film along the curves.The cracking redistributes the stress in the compressed film on the substrate;3)on the concave side of the curve,the wrinkling of the film surface is suppressed to be identified as shielding effect and on the convex side the wrinkling of the film surface is induced to be identified as inductive effect.The shielding and inductive effects make the dis-ordered wrinkling and buckling controllable.This phenomenon provides a potential application in the fabrication of flexible electronic devices.     

Formation of Ti1–x Si x and Ti1–x Si x N films by magnetron co-sputtering

The paper reports on surface morphology, structure and microhardness of TiSi–N films formed by cosputtering from two target-facing unbalanced magnetrons, equipped with pure Ti and Si targets, on an unheated substrate rotating in front of both targets. The ratio Si/Ti in the TiSi–N film was achieved by modifying the magnitude of currents in the individual magnetrons and by the addition of nitrogen to the film. The rotation of the substrate has a strong effect on the film deposition rate and its morphology. The deposition rate is 3 times lower than that of the film deposited on a stationary substrate. The surface roughness of a polycrystalline Ti film deposited on the rotating substrate is considerably higher than that on a stationary substrate. On the contrary, the surface of an amorphous Si film is smooth and there is no difference between the roughness of Si films sputtered on stationary and on rotating substrates. The hardness of the film increases with increasing Si content and with the addition of nitrogen to the TiSi film. The Ti(26 at.%)Si(8.5 at.%)N(65 at.%)-film sputtered on an unheated rotating steel substrate, held at a floating potential, exhibited the best result with a hardness of 29 GPa.     

Resonance ultrasound spectroscopy with laser-Doppler interferometry for studying elastic properties of thin films

We propose an advanced method to determine the elastic-stiffness coefficients Cij of thin films using resonance ultrasound spectroscopy (RUS). It uses free-vibration resonance frequencies of a film/substrate layered solid and derives inversely the film's Cij from the resonance frequencies. We develop a piezoelectric tripod consisting of two pinducers and one support to place the specimen on it and measure the resonance frequencies with high enough accuracy. Furthermore, we achieve mode identification by measuring deformation distributions on the vibrating specimen surface using laser-Doppler interferometry. Accurate measurements of frequencies and correct mode identification are the keys for deducing reliable Cij of the film. We applied this technique to copper thin films deposited of Si substrates. The resulting film's Cij are considerably smaller than the bulk's Cij and show anisotropy between the out-of-plane direction and in-plane direction.     

Externally applied stress sign and film elastic properties effects on brittle film fracture

Rectangular stainless steel samples with TiN film deposited on the front lateral surface were loaded in three-point bending to the maximum normal strain of 6%. Scanning electron microscopy showed that vertical cracks appeared in the tension zone when the tensile strain exceeded 1.5%, while horizontal cracks appeared in the compression zone when the compressive strain exceeded –2.9%. Film cracks in the compressive zone originate from the tensile stress imposed by the plastically deformed substrate due to the Poisson’s expansion. Taking plastic deformation and Poisson’s expansion of the substrate in compression into account, theoretical analysis of normal stress distribution along the cracked film segment in compression is presented. Substrate strain and film elastic properties affect film cracking in the compressive zone. At larger compressive strain, some transverse cracks along with buckling cause the film spallation. The presented method is useful for studying brittle film fracture with variable strain levels in a single sample.     

The rapid prototyping of textured amorphous surfaces for the graphoepitaxial deposition of CdTe films using focused ion beam lithography

Cadmium telluride films deposited on amorphous substrates exhibit a grain structure characterized by [111]-oriented grains, but where the in-plane grain orientation is randomized due to the absence of epitaxy. Here, we explore the viability of promoting an in-plane grain alignment through graphoepitaxy. Fifteen different substrate surface textures were fabricated using focused ion beam lithography. This approach allows for the side-by-side deposition of surface textures where both the areal extent and depth of the surface features are varied in a systematic manner. CdTe films deposited overtop these textures show grain structures with dramatic variations, revealing that particular length scales have the most pronounced effect on the grain structure.     

Role of metal ions in growth and stability of Langmuir-Blodgett films on homogeneous and heterogeneous surfaces

Structure and stability of cadmium arachidate (CdA) Langmuir-Blodgett (LB) films on homogeneous (i.e., OH-, H-passivated Si(001) substrates) and heterogeneous (i.e., Br-passivated Si(001) substrates) surfaces were studied using X-ray reflectivity and atomic force microscopy techniques and compared with those of nickel arachidate (NiA) LB films. While on OH-passivated Si, an asymmetric monolayer (AML) structure starts to grow, on H-passivated Si, a symmetric monolayer (SML) of CdA forms, although for both the films, pinhole-type defects are present as usual. However, on heterogeneous Br-passivated Si substrates, a combination of AML, SML, shifted SML and SML on top of AML (i.e., AML/SML), all types of structures are found to grow in such a way that, due to the variation of heights in the out-of-plane direction, ring-shaped in-plane nanopatterns of CdA molecules are generated. Probably due to stronger head-head interactions and higher metal ion-carboxylic ligand bond strength for CdA molecules compared to NiA, easy flipping of SML on top of another preformed SML, i.e. a SML/SML structure formation was not possible and as a result a wave-like modulation is observed for the CdA film on such heterogeneous substrate. The presence of hydrophilic/hydrophobic interfacial stress on the heterogeneous substrate thus modifies the deposited molecular structure so that the top surface morphology for a CdA film is similar to monolayer buckling while that for NiA film is similar to monolayer collapse.     

LaNiO3 under-electrode layers for the growth of textured (Pb0.4Zr0.6)TiO3 thin films using pulsed laser deposition

We investigated the structural properties of LaNiO₃ thin films of three different thicknesses deposited by pulsed laser deposition on Si(001) mainly by using a synchrotron X-ray scattering measurement. The LaNiO₃ thin films were grown with the (00l) preferred growth direction, showing completely random distribution in the in-plane direction. In the early stage of the growth, the film was almost unstrained. However, as the film grew further, tensile strain was markedly involved. Also its surface became rougher but its crystalline quality improved significantly with increasing film thickness. A completely (00l)-oriented (Pb_0.4Zr_0.6)TiO₃ thin film was successfully grown on such a LaNiO₃/Si(001) substrate at a substrate temperature of 350 °C by using the same pulsed laser deposition. Our results show that the LaNiO₃ film can serve effectively as a bottom electrode layer for the preparation of a well-oriented (Pb_0.4Zr_0.6)TiO₃ thin film on Si substrates.     

真空磁场热处理温度对不同厚度的Ni88Cu12薄膜畴结构及磁性的影响

利用射频磁控共溅射方法,在Si衬底上制备了Ni88Cu12薄膜,并且研究了膜厚以及真空磁场热处理温度对畴结构和磁性的影响. X射线衍射结果表明热处理后的薄膜晶粒长大,扫描电子显微镜结果发现不同热处理温度下薄膜表现出不同的形貌特征.热处理前后的薄膜面内归一化磁滞回线结果显示,经过热处理的Ni88Cu12薄膜条纹畴形成的临界厚度降低,未热处理的Ni88Cu12薄膜在膜厚为210 nm时出现条纹畴结构,而经过300℃热处理的Ni88Cu12薄膜在膜厚为105 nm就出现了条纹畴结构.高频磁谱的结果表明,随着热处理温度的增加, Ni88Cu12薄膜的共振峰会有小范围的移动.     

Crystal structure and magnetic properties of SmCo-based films deposited on hot Si (1 0 0) substrates

SmCo-based films were deposited on Si (1 0 0) substrates by the rf magnetron sputtering process. The growth conditions are improved for the films deposited on hot Si substrates without the annealing process. The dependence of crystal structure and intrinsic coercivity on substrate temperature is chiefly investigated. It is suggested that TbCu₇ type structural films can be obtained with enhanced in-plane magnetic properties with proper substrate temperature.