High Power All-Solid-State Nd: YVO_4 laser and its intracavity SHG

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Studies on the SFD Properties of Nd_xGd_(1-x)Ca_4O(BO_3)_3 Solid-solution Crystal

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Studies on the SFD Properties of NdxGd1-xCa4O(BO3)3 Solid-solution Crystal

NdxGd1-xCa4O(BO3)3 (NdGdCOB) is a new self-frequency-doubling (SFD) solid-solution crystal. The second-harmonic generation (SHG) phase-matching (PM) curves were calculated by using refractive indices. The deff of NdGdCOB crystal along different PM directions were calculated according to the sellmeier equation and dijk data in which the (θ=66.8°, φ=132.6°) PM direction has the highest deff. SFD experiments were carried out with Ti:sapphire CW laser and pulsed dye-laser. A green laser output power up to 225 mW at 530 nm was achieved from a 7×3×3 mm3 crystal sample pumped by 1560 mW CW Ti:sapphire laser. The lasing threshold of SFD was lower than 1.8 mW along the PM direction (66.8°,132.6°). The optical-optical conversion efficiency was 14.4%. The conversion efficiency was 7.7% when 10×3×3 mm3 sample was side-pumped by the pulsed dye-laser tuned to 595.4 nm with 17.5 mJ energy and the lasing threshold is 1.2 mJ.     

半导体激光直接倍频的488nm蓝光激光器

利用波导型准相位匹配周期极化反转铌酸锂(PPLN)晶体直接倍频波长为976 nm的连续半导体激光二极管,在最佳晶体工作温度(28℃)下,获得了波长为488 nm的连续蓝光输出,最大输出功率大于20 mW。所用的晶体尺寸为8 mm×1.4 mm×1 mm,波导截面为4.5μm×3.5μm,极化周期为5.2μm。研究了波导型周期极化反转铌酸锂晶体的倍频效率与温度的关系,与普通的周期极化反转铌酸锂相比,倍频效率与温度关系的敏感度较低。同时,由于晶体可以在室温下工作,简化了加温与温控部件,提高了整机的工作效率。在此实验的基础上,制成了一台小型的全固态488 nm连续蓝光激光器。     

周期极化KTiOPO4晶体连续倍频绿光输出

采用外加电场极化方法，在Z切1mm厚的KTiOPO4晶体中实现了周期性极化反转。晶体的极化反转周期为9．0／μm，相互作用长度为3mm。波长为1．064μm的基频光功率为900mW，晶体中心温度为32℃时，获得0．532μm、22μW的倍频绿光输出，二次谐波转换效率为0．0024％。     

High-power, Yb-fiber-laser-pumped, picosecond parametric source tunable across 752-860 nm

We report a stable, high-power source of picosecond pulses in the near-infrared based on intracavity second harmonic generation (SHG) of a MgO:PPLN optical parametric oscillator synchronously pumped at 81 MHz by a mode-locked Yb-fiber laser. By exploiting the large spectral acceptance bandwidth for Type I (oo→e) SHG in β-BaB2O4 and a 5 mm crystal, we have generated picosecond pulses over 752-860 nm spectral range under minimal angle tuning, with as much as 3.5 W of output power at 778 nm and >2 W over 73% of the tuning range, in good beam quality with TEM00 spatial profile and M2<1.4. The SHG output pulses have durations of 15.2 ps, with a spectral bandwidth of ～3.4 nm at 784 nm. In addition, the oscillator simultaneously provides a signal power of >1 W over 1505-1721 nm (25 THz) and idler power >1.8 W over 2787-3630 nm (25 THz), corresponding to a total (signal plus idler) tuning range of 1059 nm. The SHG, signal, and idler output exhibit passive long-term power stability better than 1.6%, 1.3%, and 1.6% rms, respectively, over 14 h.     

准相位匹配周期极化掺镁铌酸锂490 nm倍频连续输出

在室温下通过外加电场极化法,首次用较低的极化开关电场～5.5 kV/mm,在厚为1 mm、长为20 mm、宽为18 mm的掺镁铌酸锂基片上成功的制备了周期为4.8～5.2 μm的一阶准相位匹配倍频光学微结构;并在室温下,以波长为980 nm的半导体激光器为基频光源,对所研制的微结构样品进行倍频通光实验,在入射基频光为800 mW时,产生约40 mW的490 nm的倍频光,其对应转换效率为5%,实验过程中未见绿致吸收光折变现象.     

Growth and laser properties of Nd:Ca4YO(BO3)3 crystal

Nd:Ca₄YO(BO₃)₃ (Nd:YCOB) crystal was grown by the Czochralski method, and its structure was measured by using a four circle X-ray diffractometer. The transparent spectrum from 200 to 2600 nm was measured at room temperature. The fluorescence spectrum near 1.06 μm showed that the main emission wavelength of Nd:YCOB crystal was centered at 1060.8 nm. Laser output at 1.06 μm has been demonstrated when it was pumped by a Ti:sapphire laser at the wavelength of 794 nm, the highest output power was 68 mW under pumping power of 311 mW, the pumping threshold was 163 mW and slope efficiency was 46.9%. The self-frequency doubled green light has been observed when it was pumped by a Ti:sapphire or a laser diode (LD). A 14.5 mm Nd:YCOB crystal sample cut at (θ, φ)=(90°, 33°) was used for type I second-frequency generation (SHG) of the 1.06 μm laser pulse. The SHG conversion efficiency was 22%.     

Ti:Sapphire Pumped 10 at-% Yb:YAG Thin Chip with 320 mW CW laser output of 1.053 μm

We have developed an efficient room-temperature 10 at-% Yb:YAG thin chip (7 mm×7 mm×1 mm) laser operating at 1.053 μm pumped by a Ti-sapphire laser operating at 940 nm. 320 mW of output power was obtained for an absorbed pump power of 791 mW. The slope efficiency was 54%, and extrapolated threshold power was 203 mW.     

Manifestation of hexagonal-like structure in the second-order nonlinear effects in the GaN nanocrystallites

Contribution of the hexagonal-like structural components to the photoinduced second harmonic generation (SHG) in GaN large-sized nanocrystallites (with sizes about the 10–30 nm) incorporated into the polyvinylalcohol photopolymer matrices is revealed. The SHG measurements were done using pulsed Nd:YAG laser beam (λ=1.06 μm; pulse duration τ=15–50 ps, laser power about 30 MW) as a fundamental ones and a picosecond nitrogen pulsed laser (P=10 MW; λ=0.377 μm; pulse time duration τ=10–25 ps) as a photoinducing one. We have found that with increasing pumping power density the SHG output signal increases and achieves its maximum value for the power density about 2.6 GW/cm² per pulse. The maximal output photoinduced SHG signal was achieved for parallel directions of the pumping and fundamental beam polarizations. The maximal values of the second-order nonlinear susceptibilities were equal to about 1.09 pm/V. We have observed an increase of the output SHG below 30 K and for pump-probe delaying time about 18 ps. Substantial contribution to the SHG of wurtzite-like (hexagonal) structural fragments is shown.     

All-solid-state CW intracavity frequency-doubling Nd:Lu<Subscript>2</Subscript>O<Subscript>3</Subscript>/LBO red laser at 679.5 nm

We report an efficient intracavity second-harmonic generation (SHG) at 1359 nm in a non-linear optical crystal, LiB₃O₅ (LBO), performed with a diode end pumped continuous-wave (cw) Nd:Lu₂O₃ laser. In the case of a laser with a Nd:Lu₂O₃ crystal frequency-doubled with a LBO crystal cut for type I frequency doubling. A cw SHG output power of 462 mW has been obtained using a 10 mm long LBO crystal. The red power stability was 3.4% in 4 h.     

Efficient intracavity second-harmonic generation at 1063 nm in a GdCOB crystal

We report an efficient intracavity second-harmonic generation (SHG) at 1063 nm in a non-linear optical crystal, GdCa₄O(BO₃)₃ (GdCOB), performed with a diode end pumped continuous-wave (CW) Nd:GdVO₄ laser. In the case of a laser with an a-cut 0.4 at % Nd:GdVO₄ crystal frequency-doubled with a GdCOB crystal cut for Type I frequency doubling. A CW SHG output power of 2.25 W has been obtained using a 15 mm long GCOB crystal. The optical conversion efficiency with respect to the incident pump power was 12.4%.     

All-solid-state continuous-wave frequency-doubling Nd:LuVO<Subscript>4</Subscript>/GBCOB laser at 533 nm

We report an efficient intracavity second-harmonic generation (SHG) at 1066 nm in a non-linear optical crystal, GdCa₄O(BO₃)₃ (GdCOB), performed with a diode end pumped continuous-wave (CW) Nd:LuVO₄ laser. In the case of a laser with a Nd:LuVO₄ crystal frequency-doubled with a GdCOB crystal cut for type I frequency doubling. A CW SHG output power of 5.18 W has been obtained using a 10 mm long GCOB crystal. The optical conversion efficiency with respect to the incident pump power was 28.5%.     

群速失配对CsLiB6O10晶体谐波脉冲展宽的影响

对超短强激光脉冲在CsLiB6O10晶体中的群速失配进行了理论分析,采用傅里叶变换法推导超短脉冲二次谐波的耦合波方程。在Ⅰ类相位匹配下数值计算了脉冲宽度50fs的基波532nm,在CsLiB6O10晶体长度为0．5mm时产生二次谐波(266nm)的群速延迟量约100fs,并且随着晶体长度的增长,二次谐波的脉冲宽度几乎线性展宽。并得到了群速失配量△β1^（2）226．243fs／mm,低阶和二阶群速色散系数分别为β2^（3）=210．120fs^2／mm,β2^(3)=65．587fs^3／mm。其结果表明由于群速延迟和群速色散导致了谐波脉宽展宽和形变。     

990 mW average power, 52% efficient, high-repetition-rate picosecond-pulse generation in the blue with BiB3O6

Efficient single-pass second-harmonic generation (SHG) of tunable high-repetition-rate picosecond pulses into the blue is reported in the nonlinear crystal BiB3O6. Using 2.4 ps fundamental pulses from a mode-locked Ti:sapphire laser at 76 MHz and a 10 mm crystal cut for type I (e + e --> o) phase matching in the optical yz plane, second-harmonic average powers as high as 990 mW with excellent stability have been generated at 52% conversion efficiency, and a tunable range of 370-450 nm is demonstrated. From measurements of single-pass SHG in the continuous-wave regime an effective nonlinear coefficient of 3.7 pm/V has been verified for BiB3O6, and direct comparison with beta-BaB2O4 confirms a SHG power enhancement of approximately 23% for the same crystal length. Autocorrelation measurements in a 200 microm crystal of beta-BaB2O4 result in durations of 2.8 ps for the second-harmonic blue pulses.     

Generation of 15 W femtosecond laser pulse from a Kerr-lens mode-locked Yb:YAG thin-disk oscillator

We demonstrated a robust power-scalable Kerr-lens mode-locked(KLM) operation based on a Yb:YAG thin-disk oscillator.15-W,272-fs pulses were realized at a repetition rate of 86.7 MHz with an additional Kerr medium and a 2.5 mm hard aperture in the cavity.247-fs pulses with an average power of 11 W could also be obtained by using a 2.4 mm hard aperture.Based on this shorter pulse,high efficient second-harmonic generation(SHG) was performed with a 1.7-mm-long Li B3O5(LBO) crystal.The SHG laser power was up to 5 W with the power fluctuation RMS of 1% measured over one hour.     

Fabrication of periodically poled lithium tantalate for UV generation with diode lasers

Fabrication of periodically poled lithium tantalate (PPLT) with periods as short as 1.3 μm for second harmonic generation (SHG) in the UV range and for optical parametric oscillators pumped at 532 nm is reported. Both the maximum crystal size of up to 40 mm and the minimum poling period of 1.3 μm are improvements on earlier results, achieved by optimizing the poling conditions and by using a novel electrode design consisting of electrode structures on both surfaces of the crystal. Single-pass SHG of a master oscillator power amplifier (MOPA) diode laser with an output power of 1.36 mW at 336 nm using a 16-mm-long PPLT crystal with a 1.5 μm poling period is reported. Received: 11 June 2001 / Published online: 18 July 2001     

175 to 210 nm widely tunable deep-ultraviolet light generation based on KBBF crystal

We have developed a widely tunable deep-ultraviolet (DUV) laser in the wavelength range from 175 to 210 nm by the fourth harmonic generation of Ti:Sapphire laser. The fourth harmonic generation is performed by direct second-harmonic generation (SHG) of a frequency doubled Ti:Sapphire laser with KBBF crystal. The highest output power is 2.23 mW at 193 nm, and the power of the DUV laser is more than 1 mW from 182 nm to 210 nm. To our knowledge, it is the first demonstration of milliwatt-level widely tunable DUV all-solid-state laser below 200 nm by direct SHG technique.     

IR-induced nonlinear optics in Ge-doped Bi12TiO20 large-sized nanocrystallites

Photoinduced non-linear optical effects in large-sized (up to 25 nm) nanocrystallites (NC) of Ge-doped Bi₁₂TiO₂₀ (BTO:Ge) incorporated within olygoether photopolymer matrix have been studied. Photoinduced second harmonic generation (PISHG) was measured. Nd:YAG pulsed laser (λ=1.06 μm) was used as a source of photoinducing light. As a fundamental light source for the SHG and two-photon absorption, Er:LiYF₄ laser (λ=2.065 μm) was used. We have found that with increasing IR pump power density, the output doubled frequency SHG signal (λ=1.03 μm) increases and achieves its maximum value at the pump power density about 0.45 GW/cm² and NC size about 12 nm.The values of second-order optical susceptibilities were almost 20% larger than for the pure BTO NC single crystals. With decreasing temperature below 60 K, the SHG signal increases achieving maximal value at LHeT.     

Novel MEMS variable optical attenuator

A novel MEMS variable optical attenuator (VOA), which has completely different attenuation mechanism from those in literatures, is proposed and demonstrated in this paper. The basic operation principle is that the optical power coupled between two initially aligned single-mode fibers will be continuously attenuated while the end of one of the fibers is deflected from the initial position. A micromachined solenoid type inductor with a U-shaped permalloy magnetic core is used to attract the deflectable fiber that has a permalloy coat on its end. To fabricate the multi-layer three-dimensional inductive component, a new UV-LIGA process for thick photoresists is developed, combining advantages of both SU-8 and AZ-4000 series photoresists. The inductive component is approximately 1.7 mm×1.3 mm×50μm in size and has a low resistance value (- 2.1Ω). The whole size of the VOA before packaging is 30 mmx2 mmx0.6 mm. The first prototype shows less then 3-dB insertion loss at 0-dB attenuation and nearly 40-dB att